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TPS61085
SLVS859B – JUNE 2008 – REVISED DECEMBER 2014

TPS61085 650-kHz,1.2-MHz, 18.5-V Step-Up DC-DC Converter

1 Features 3 Description
•
1 2.3 V to 6 V Input Voltage Range The TPS61085 is a high frequency, high efficiency
DC-DC converter with an integrated 2.0-A, 0.13-Ω
• 18.5-V Boost Converter With 2.0-A Switch Current power switch capable of providing an output voltage
• 650-kHz/1.2-MHz Selectable Switching Frequency up to 18.5 V. The selectable frequency of 650 kHz or
• Adjustable Soft-Start 1.2 MHz allows the use of small external inductors
• Thermal Shutdown and capacitors and provides fast transient response.
The external compensation allows optimizing the
• Undervoltage Lockout application for specific conditions. A capacitor
• 8-Pin VSSOP Package connected to the soft-start pin minimizes inrush
• 8-Pin TSSOP Package current at startup.

Device Information(1)
2 Applications
PART NUMBER PACKAGE BODY SIZE (NOM)
• Handheld Devices VSSOP (8) 3.00 mm × 3.00 mm
• GPS Receivers TPS61085
TSSOP (8) 3.00 mm × 4.40 mm
• Digital Still Cameras
(1) For all available packages, see the orderable addendum at
• Portable Applications the end of the datasheet.
• DSL Modems
• PCMCIA Cards
• TFT LCD Bias Supply

4 Simplified Schematic
L
3.3 mH

VIN D VS
PMEG2010AEH 12 V/300 mA
2.3 V to 6 V 6 5
IN SW
CBY R1
1 µF 158 kΩ
CIN 16 V 3 2 COUT
EN FB
10 µF
16 V R2 2* 10 µF
18.2 kΩ 25 V
7 1
FREQ COMP

RCOMP
4 8 51 kΩ
GND SS
CCOMP
TPS61085 1.1 nF
CSS
100 nF

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features .................................................................. 1 8.3 Feature Description................................................... 8
2 Applications ........................................................... 1 8.4 Device Functional Modes.......................................... 8
3 Description ............................................................. 1 9 Application and Implementation .......................... 9
4 Simplified Schematic............................................. 1 9.1 Application Information.............................................. 9
9.2 Typical Application .................................................... 9
5 Revision History..................................................... 2
9.3 System Examples ................................................... 15
6 Pin Configuration and Functions ......................... 3
10 Power Supply Recommendations ..................... 18
7 Specifications......................................................... 3
7.1 Absolute Maximum Ratings ...................................... 3 11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
7.2 ESD Ratings.............................................................. 3
11.2 Layout Example .................................................... 19
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information .................................................. 4 12 Device and Documentation Support ................. 20
7.5 Electrical Characteristics........................................... 4 12.1 Trademarks ........................................................... 20
7.6 Typical Characteristics .............................................. 5 12.2 Electrostatic Discharge Caution ............................ 20
12.3 Glossary ................................................................ 20
8 Detailed Description .............................................. 7
8.1 Overview ................................................................... 7 13 Mechanical, Packaging, and Orderable
8.2 Functional Block Diagram ......................................... 7
Information ........................................................... 20

5 Revision History
Changes from Revision A (April 2012) to Revision B Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1

Changes from Original (June 2008) to Revision A Page

• Changed the circuit illustration value of CCOMP From: 1.6 nF To: 1.1 nF ............................................................................... 1
• Deleted Lead Temperature from the Abs Max table .............................................................................................................. 3
• Added a conditions statement and two new graphs (Max Load Current vs Input Voltage) to the Typical
Characteristics graphs ............................................................................................................................................................ 5
• Added three paragraphs of text to the Detailed Description. ................................................................................................. 7
• Changed Figure 8 to Figure 17 .............................................................................................................................................. 9
• Changed the Design Procudures step 3 details following Equation 4 ................................................................................ 10
• Changed text in the Inductor Selection section "inductor current ripple is below 20%" to " inductor current ripple is
below 35%" .......................................................................................................................................................................... 10
• Changed Equation 8............................................................................................................................................................. 12
• Added Used IOUT to Table 5.................................................................................................................................................. 12
• Added Equation 10 ............................................................................................................................................................... 13
• Changed the White LED Applications optional Zener connection for Figure 19 to Figure 21.............................................. 17

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6 Pin Configuration and Functions

DGK, PW Packages
8 Pins
Top View

COMP 1 8 SS

FB 2 7 FREQ

EN 3 6 IN

PGND 4 5 SW

8-PIN 4.9-mm × 3-mm × 1.1-mm VSSOP (DGK)

8-PIN 6.4-mm × 3-mm × 1.2-mm TSSOP (PW)

Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
COMP 1 I/O Compensation pin
EN 3 I Shutdown control input. Connect this pin to logic high level to enable the device
FB 2 I Feedback pin
FREQ 7 I Frequency select pin. The power switch operates at 650 kHz if FREQ is connected to GND and at 1.2 MHz if
FREQ is connected to IN
IN 6 I Input supply pin
PGND 4 Power ground
SS 8 O Soft-start control pin. Connect a capacitor to this pin if soft-start needed. Open = no soft-start
SW 5 I Switch pin

7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
Input voltage range IN –0.3 7 V
Voltage range on pins EN, FB, SS, FREQ, COMP –0.3 7 V
Voltage on pin SW -0.3 20 V
Continuous power dissipation See Thermal Information
Operating junction temperature –40 150 °C
Storage temperature –65 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000
Charged-device model (CDM), per JEDEC specification JESD22- ±500
V(ESD) Electrostatic discharge V
C101 (2)
Machine model (MM) ±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions. Pins listed as ±XXX V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions. Pins listed as ±YYY V may actually have higher performance.

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7.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VIN Input voltage range 2.3 6 V
VS Boost output voltage range VIN + 0.5 18.5 V
TA Operating free-air temperature –40 85 °C
TJ Operating junction temperature –40 125 °C

7.4 Thermal Information

TPS61085
THERMAL METRIC (1) DGK PW UNIT
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 189.3 183.3
RθJC(top) Junction-to-case (top) thermal resistance 57.1 66.7
RθJB Junction-to-board thermal resistance 109.9 112.0 °C/W
ψJT Junction-to-top characterization parameter 3.5 8.3
ψJB Junction-to-board characterization parameter 108.3 110.3

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VIN = 3.3 V, EN = VIN, VS = 12 V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.3 6 V
IQ Operating quiescent current into IN Device not switching, VFB = 1.3 V 70 100 μA
ISDVIN Shutdown current into IN EN = GND 1 μA
UVLO Undervoltage lockout threshold VIN falling 2.2 V
VIN rising 2.3 V
TSD Thermal shutdown Temperature rising 150 °C
TSD(HYS) Thermal shutdown hysteresis 14 °C
LOGIC SIGNALS EN, FREQ
VIH High level input voltage VIN = 2.3 V to 6 V 2 V
VIL Low level input voltage VIN = 2.3 V to 6 V 0.5 V
Ilkg Input leakage current EN = FREQ = GND 0.1 μA
BOOST CONVERTER
VS Boost output voltage VIN + 18.5 V
0.5
VFB Feedback regulation voltage 1.230 1.238 1.246 V
gm Transconductance error amplifier 107 μA/V
IFB Feedback input bias current VFB = 1.238 V 0.1 μA
rDS(on) N-channel MOSFET on-resistance VIN = VGS = 5 V, ISW = current limit 0.13 0.20 Ω
VIN = VGS = 3.3V, ISW = current limit 0.15 0.24
Ilkg SW leakage current EN = GND, VSW = 6V TBD 10 µA
ILIM N-Channel MOSFET current limit 2.0 2.6 3.2 A
ISS Soft-start current VSS = 1.238 V 7 10 13 μA
fS Oscillator frequency FREQ = VIN 0.9 1.2 1.5 MHz
FREQ = GND 480 650 820 kHz
Line regulation VIN = 2.3 V to 6 V, IOUT = 10 mA 0.0002 %/V
Load regulation VIN = 3.3 V, IOUT = 1 mA to 400 mA 0.11 %/A

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7.6 Typical Characteristics

The typical characteristics are measured with the inductors 7447789003 3.3 µH (high frequency) or B82464G4 6.8 µH (low
frequency) from Epcos and the rectifier diode SL22.
Table 1. Table Of Graphs
FIGURE
vs Input voltage at high frequency (1.2 MHz) Figure 1
IOUT(max) Maximum load current
vs Input voltage at low frequency (650 kHz) Figure 2
vs Load current, VS = 12 V, VIN = 3.3 V Figure 3
η Efficiency
vs Load current, VS = 9 V, VIN = 3.3 V Figure 4
Supply current vs Supply voltage Figure 5
Frequency vs Load current Figure 6
Frequency vs Supply voltage Figure 7

1.6 1.6
fS = 1.2 MHz fS = 1.2 MHz

1.4 VOUT = 9 V 1.4 VOUT = 9 V

1.2 1.2
IOUT − Output Current (A)

IOUT − Output Current (A)

VOUT = 12 V VOUT = 12 V
1 1

0.8 0.8

0.6 0.6

0.4 0.4
VOUT = 15 V
0.2 VOUT = 15 V 0.2
VOUT = 18.5 V VOUT = 18.5 V
0 0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VIN − Input Voltage (V) VIN − Input Voltage (V)
G000 G000

Figure 1. Maximum Load Current vs Input Voltage Figure 2. Maximum Load Current vs Input Voltage

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100 100
fS = 650 kHz fS = 650 kHz
90 L = 6.8 µH 90 L = 6.8 µH

80 fS = 1.2 MHz 80 fS = 1.2 MHz

L = 3.3 µH L = 3.3 µH
70 70
Efficiency - %

Efficiency - %
60 60

50 50

40 40

30 30

20 20
VIN = 3.3 V VIN = 3.3 V
10 10
VS = 12 V VS = 9 V
0 0
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80
IOUT - Load current - A
IOUT - Load current - A
Figure 3. Efficiency vs Load Current Figure 4. Efficiency vs Load Current
2 1600

1.8
1400 FREQ = VIN
Switching
1.6 fS = 1.2 MHz L = 3.3 µH
L = 3.3 µH 1200
ICC - Supply Current - mA

1.4
fS - Frequency - kHz

1000
1.2

1 800 FREQ = GND

L = 6.8 µH
0.8 Switching
600
fS = 650 kHz
0.6 L = 6.8 µH
400
0.4 VIN = 3.3 V
200 VS = 12 V
0.2 Not Switching

0 0
2 2.5 3 3.5 4 4.5 5 5.5 6 0.0 0.1 0.2 0.3 0.4 0.5 0.6
VCC - Supply Current - V IOUT - Load current - mA
Figure 5. Supply Current vs Supply Voltage Figure 6. Frequency vs Load Current
1400

1200
FREQ = VIN
L = 3.3 µH
1000
fS - Frequency - kHz

800 FREQ = GND

L = 6.8 µH

600

400

200 VS = 12 V / 200 mA

0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VCC - Supply Voltage - V
Figure 7. Frequency vs Supply Voltage

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8 Detailed Description

8.1 Overview
The boost converter is designed for output voltages up to 18.5 V with a switch peak current limit of 2.0 A
minimum. The device, which operates in a current mode scheme with quasi-constant frequency, is externally
compensated for maximum flexibility and stability. The switching frequency is selectable between 650 kHz and
1.2 MHz and the minimum input voltage is 2.3 V. To control the inrush current at start-up a soft-start pin is
available.
TPS61085 boost converter’s novel topology using adaptive off-time provides superior load and line transient
responses and operates also over a wider range of applications than conventional converters.
The selectable switching frequency offers the possibility to optimize the design either for the use of small sized
components (1.2 MHz) or for higher system efficiency (650 kHz). However, the frequency changes slightly
because the voltage drop across the rDS(on) has some influence on the current and voltage measurement and
thus on the on-time (the off-time remains constant).
The converter operates in continuous conduction mode (CCM) as soon as the input current increases above half
the ripple current in the inductor, for lower load currents it switches into discontinuous conduction mode (DCM). If
the load is further reduced, the part starts to skip pulses to maintain the output voltage.

8.2 Functional Block Diagram

VIN VS

EN IN FREQ SW

SS Current limit
and
Soft Start

tOFF Generator

Bias Vref = 1.238V

UVLO
Thermal Shutdown tON
Gate Driver of
PWM
Power
Generator
Transistor

COMP

GM Amplifier

FB

V ref

PGND

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8.3 Feature Description

8.3.1 Soft-Start
The boost converter has an adjustable soft-start to prevent high inrush current during start-up. To minimize the
inrush current during start-up an external capacitor connected to the soft-start pin SS and charged with a
constant current, is used to slowly ramp up the internal current limit of the boost converter when charged with a
constant current. When the EN pin is pulled high, the soft-start capacitor CSS is immediately charged to 0.3 V.
The capacitor is then charged at a constant current of 10 μA typically until the output of the boost converter VS
has reached its Power Good threshold (roughly 98% of VS nominal value). During this time, the SS voltage
directly controls the peak inductor current, starting with 0 A at VSS = 0.3 V up to the full current limit at VSS =0.8
V. The maximum load current is available after the soft-start is completed. The larger the capacitor the slower the
ramp of the current limit and the longer the soft-start time. A 100 nF capacitor is usually sufficient for most of the
applications. When the EN pin is pulled low, the soft-start capacitor is discharged to ground.

8.3.2 Frequency Select Pin (FREQ)

The frequency select pin FREQ allows to set the switching frequency of the device to 650 kHz (FREQ = low) or
1.2 MHz (FREQ = high). Higher switching frequency improves load transient response but reduces slightly the
efficiency. The other benefits of higher switching frequency are a lower output ripple voltage. The use of the 1.2
MHz switching frequency is recommended unless light load efficiency is a major concern.

8.3.3 Undervoltage Lockout (UVLO)

To avoid mis-operation of the device at low input voltages an undervoltage lockout is included that disables the
device, if the input voltage falls below 2.2 V.

8.3.4 Thermal Shutdown

A thermal shutdown is implemented to prevent damages due to excessive heat and power dissipation. Typically
the thermal shutdown threshold happens at a junction temperature of 150°C. When the thermal shutdown is
triggered the device stops switching until the temperature falls below typically 136°C. Then the device starts
switching again.

8.3.5 Overvoltage Prevention

If overvoltage is detected on the FB pin (typically 3 % above the nominal value of 1.238 V) the part stops
switching immediately until the voltage on this pin drops to its nominal value. This prevents overvoltage on the
output and secures the circuits connected to the output from excessive overvoltage.

8.4 Device Functional Modes

The converter operates in continuous conduction mode (CCM) as soon as the input current increases above half
the ripple current in the inductor, for lower load currents it switches into discontinuous conduction mode (DCM). If
the load is further reduced, the part starts to skip pulses to maintain the output voltage.

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9 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

9.1 Application Information

The TPS61085 is designed for output voltages up to 18.5 V with a switch peak current limit of 2.0 A minimum.
The device, which operates in a current mode scheme with quasi-constant frequency, is externally compensated
for maximum flexibility and stability. The switching frequency is selectable between 650 kHz and 1.2 MHz, and
the input voltage range is 2.3 V to 6.0V. To control the inrush current at start-up a soft-start pin is available. The
following section provides a step-by-step design approach for configuring the TPS61085 as a voltage regulating
boost converter.

9.2 Typical Application

L
3.3 µH

D VS
VIN
PMEG2010AEH
3.3 V ±20% 6 5 12 V/600 mA max
IN SW
CBY R1
1 µF 158 kΩ
16 V 3 2 COUT
CIN EN FB
10 µF R2 2* 10 µF
16 V 18.2 kΩ 25 V
7 1
FREQ COMP

RCOMP
4 8 47 kΩ
GND SS
CCOMP
CSS 1.6 nF
TPS61085
100 nF

Figure 8. Typical Application, 3.3 V to 12 V (fS = 1.2 MHz)

9.2.1 Design Requirements

Table 2. TPS61085 12V Output Design Requirements

PARAMETERS VALUES
Input Voltage 3.3V ± 20%
Output Voltage 12V
Output Current 600mA
Switching Frequency 1.2MHz

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9.2.2 Detailed Design Procedure

9.2.2.1 Design Procedure

The first step in the design procedure is to verify that the maximum possible output current of the boost converter
supports the specific application requirements. A simple approach is to estimate the converter efficiency, by
taking the efficiency numbers from the provided efficiency curves or to use a worst case assumption for the
expected efficiency, e.g. 90%.
1. Duty cycle, D:
VIN ×h
D = 1-
VS
(1)
2. Maximum output current, IOUT(max) :
æ DI ö
I OUT (max) = ç I LIM (min) - L ÷ × (1 - D )
è 2 ø (2)
3. Peak switch current in application, ISW(peak) :
DI I
I SW ( peak ) = L + OUT
2 1- D (3)
with the inductor peak-to-peak ripple current, ΔIL
VIN × D
DI L =
fS × L
(4)
and

VIN Minimum input voltage

VS Output voltage
ILIM(min) Converter switch current limit (minimum switch current limit = 3.2 A)
fS Converter switching frequency (typically 1.2 MHz or 650 kHz)
L Selected inductor value
η Estimated converter efficiency (please use the number from the efficiency plots or 90% as an estimation)

The peak switch current is the steady state peak switch current that the integrated switch, inductor and external
Schottky diode has to be able to handle. The calculation must be done for the minimum input voltage where the
peak switch current is the highest.

9.2.2.2 Inductor Selection

The TPS61085 is designed to work with a wide range of inductors. The main parameter for the inductor selection
is the saturation current of the inductor which should be higher than the peak switch current as calculated in the
Design Procedure section with additional margin to cover for heavy load transients. An alternative, more
conservative, is to choose an inductor with a saturation current at least as high as the maximum switch current
limit of 3.2 A. The other important parameter is the inductor DC resistance. Usually, the lower the DC resistance
the higher the efficiency. It is important to note that the inductor DC resistance is not the only parameter
determining the efficiency. Especially for a boost converter where the inductor is the energy storage element, the
type and core material of the inductor influences the efficiency as well. At high switching frequencies of 1.2 MHz
inductor core losses, proximity effects and skin effects become more important. Usually, an inductor with a larger
form factor gives higher efficiency. The efficiency difference between different inductors can vary between 2% to
10%. For the TPS61085, inductor values between 3 μH and 6 μH are a good choice with a switching frequency
of 1.2 MHz, typically 3.3 μH. At 650 kHz inductors between 6 μH and 13 μH, typically 6.8 μH are recommended.
Possible inductors are shown in Table 3.
Typically, it is recommended that the inductor current ripple is below 35% of the average inductor current.
Therefore, the following equation can be used to calculate the inductor value, L:

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2
æ V ö æ V -V ö æ h ö
L = ç IN ÷ × ç S IN ÷ × ç ÷
è VS ø è I OUT × f S ø è 0.35 ø (5)
with

VIN Minimum input voltage

VS Output voltage
Iout Maximum output current in the application
fS Converter switching frequency (typically 1.2 MHz or 650 kHz)
η Estimated converter efficiency (please use the number from the efficiency plots or 90% as an estimation)

Table 3. Inductor Selection

L COMPONENT SIZE DCR TYP
SUPPLIER Isat (A)
(μH) CODE (L×W×H mm) (mΩ)
1.2 MHz
3.3 Sumida CDH38D09 4x4x1 240 1.25
4.7 Sumida CDPH36D13 5 × 5 × 1.5 155 1.36
3.3 Sumida CDPH4D19F 5.2 x 5.2 x 2 33 1.5
3.3 Sumida CDRH6D12 6.7 x 6.7 x 1.5 62 2.2
4.7 Würth Elektronik 7447785004 5.9 × 6.2 × 3.3 60 2.5
5 Coilcraft MSS7341 7.3 × 7.3 × 4.1 24 2.9
650 kHz
6.8 Sumida CDP14D19 5.2 x 5.2 x 2 50 1
10 Coilcraft LPS4414 4.3 × 4.3 × 1.4 380 1.2
6.8 Sumida CDRH6D12/LD 6.7 x 6.7 x 1.5 95 1.25
10 Sumida CDR6D23 5 × 5 × 2.4 133 1.75
10 Würth Elektronik 744778910 7.3 × 7.3 × 3.2 51 2.2
6.8 Sumida CDRH6D26HP 7 x 7 x 2.8 52 2.9

9.2.2.3 Rectifier Diode Selection

To achieve high efficiency, a Schottky type should be used for the rectifier diode. The reverse voltage rating
should be higher than the maximum output voltage of the converter. The averaged rectified forward current Iavg,
the Schottky diode needs to be rated for, is equal to the output current IOUT:
I avg = I OUT
(6)
Usually a Schottky diode with 2 A maximum average rectified forward current rating is sufficient for most
applications. The Schottky rectifier can be selected with lower forward current capability depending on the output
current Iout but has to be able to dissipate the power. The dissipated power, PD , is the average rectified forward
current times the diode forward voltage, Vforward .
PD = I avg × V forward
(7)
Typically the diode should be able to dissipate around 500mW depending on the load current and forward
voltage.

Table 4. Rectifier Diode Selection

CURRENT COMPONENT PACKAGE
Vr Vforward / Iavg SUPPLIER
RATING Iavg CODE TYPE
750 mA 20 V 0.425 V / Fairchild Semiconductor FYV0704S SOT 23
750 mA
1A 20 V 0.39 V / 1 A NXP PMEG2010AEH SOD 123
1A 20 V 0.52 V / 1 A Vishay Semiconductor B120 SMA
1A 20 V 0.5 V / 1 A Vishay Semiconductor SS12 SMA

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Table 4. Rectifier Diode Selection (continued)

CURRENT COMPONENT PACKAGE
Vr Vforward / Iavg SUPPLIER
RATING Iavg CODE TYPE
1A 20 V 0.44 V / 1 A Vishay Semiconductor MSS1P2L μ-SMP (Low
Profile)

9.2.2.4 Setting the Output Voltage

The output voltage is set by an external resistor divider. Typically, a minimum current of 50 μA flowing through
the feedback divider gives good accuracy and noise covering. A standard low side resistor of 18 kΩ is typically
selected. The resistors are then calculated as:
VS

V æ V ö
R 2 = FB » 18k W R1 = R 2 × ç S - 1÷
70 m A è VFB ø R1

VFB

VFB = 1.238V R2

(8)

9.2.2.5 Compensation (COMP)

The regulator loop can be compensated by adjusting the external components connected to the COMP pin. The
COMP pin is the output of the internal transconductance error amplifier.
Standard values of RCOMP = 13 kΩ and CCOMP = 3.3 nF will work for the majority of the applications.
See Table 5 for dedicated compensation networks giving an improved load transient response. The following
equations can be used to calculate RCOMP and CCOMP :
110 × VIN × VS × COUT Vs × COUT
RCOMP = CCOMP =
L × I OUT 7.5 × I OUT × RCOMP (9)
with

VIN Minimum input voltage

VS Output voltage
Cout Output capacitance
L Inductor value, e.g. 3.3 μH or 6.8 μH
IOUT Maximum output current in the application

Make sure that RCOMP < 120 kΩ and CCOMP> 820 pF, independent of the results of the above formulas.

Table 5. Recommended Compensation Network Values at High/Low Frequency

FREQUENCY L VS VIN ± 20% RCOMP CCOMP Used IOUT
5V 82 kΩ 1.1 nF 0.7A
15 V
3.3 V 75 kΩ 1.6 nF 0.5A
5V 51 kΩ 1.1 nF 0.9A
High (1.2 MHz) 3.3 µH 12 V
3.3 V 47 kΩ 1.6 nF 0.6A
5V 30 kΩ 1.1 nF 1.2A
9V
3.3 V 27 kΩ 1.6 nF 0.8A
5V 43 kΩ 2.2 nF 0.7A
15 V
3.3 V 39 kΩ 3.3 nF 0.5A
5V 27 kΩ 2.2 nF 0.9A
Low (650 kHz) 6.8 µH 12 V
3.3 V 24 kΩ 3.3 nF 0.6A
5V 15 kΩ 2.2 nF 1.2A
9V
3.3 V 13 kΩ 3.3 nF 0.8A

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 TPS61085
www.ti.com SLVS859B – JUNE 2008 – REVISED DECEMBER 2014

Table 5 gives conservative RCOMP and CCOMP values for certain inductors, input and output voltages providing a
very stable system. For a faster response time, a higher RCOMP value can be used to enlarge the bandwidth, as
well as a slightly lower value of CCOMP to keep enough phase margin. These adjustments should be performed in
parallel with the load transient response monitoring of TPS61087.

9.2.2.6 Input Capacitor Selection

For good input voltage filtering low ESR ceramic capacitors are recommended. TPS61085 has an analog input
IN. Therefore, a 1 μF bypass is highly recommended as close as possible to the IC from IN to GND.
One 10 μF ceramic input capacitors are sufficient for most of the applications. For better input voltage filtering
this value can be increased. Refer to Table 6 and typical applications for input capacitor recommendations.

9.2.2.7 Output Capacitor Selection

For best output voltage filtering a low ESR output capacitor like ceramic capcaitor is recommended. Two 10 μF
ceramic output capacitors (or one 22 μF) work for most of the applications. Higher capacitor values can be used
to improve the load transient response. Refer to Table 6 for the selection of the output capacitor.

Table 6. Rectifier Input and Output Capacitor Selection

CAPACITOR VOLTAGE RATING SUPPLIER COMPONENT CODE
CIN 10 μF/1206 16 V Taiyo Yuden EMK212 BJ 106KG
IN bypass 1 μF/0603 16 V Taiyo Yuden EMK107 BJ 105KA
COUT 10 μF/1206 25 V Taiyo Yuden TMK316 BJ 106KL

To calculate the output voltage ripple, Equation 10 can be used:

V - VIN I OUT
DVC = S × DVC _ ESR = I L ( peak ) × RC _ ESR
VS × f S COUT (10)
with

ΔVC Output voltage ripple dependent on output capacitance,output current and switching frequency
VS Output voltage
VIN Minimum input voltage of boost converter
fS Converter switching frequency (typically 1.2 MHz or 650 kHz)
Iout Output capacitance
ΔVC_ESR Output voltage ripple due to output capacitors ESR (equivalent series resistance)
ISWPEAK Inductor peak switch current in the application
RC_ESR Output capacitors equivalent series resistance (ESR)

ΔVC_ESR can be neglected in many cases since ceramic capacitors provide low ESR.

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9.2.3 Application Curves

VSW VSW
5 V/div 5 V/div

VS_AC
VS_AC
50 mV/div
50 mV/div
VIN = 3.3 V
VS = 12 V/1 mA
IL
fS = 1.2 MHz
1 A/div
VIN = 3.3 V
IL VS = 12 V/300 mA
200 mA/div fS = 1.2 MHz

200 ns/div 200 ns/div

Figure 9. PWM Switching Discontinuous Conduction Mode Figure 10. PWM Switching Continuous Conduction Mode

VIN = 3.3 V COUT = 20 µF VIN = 3.3 V COUT = 20 µF

VS = 12 V L = 3.3 µH VS = 12 V L = 6.8 µH
RCOMP = 51 kΩ RCOMP = 24 kΩ
CCOMP = 1.6 nF CCOMP = 3.3 nF

VS_AC VS_AC
200 mV/div 200 mV/div

IOUT = 50 mA - 200 mA IOUT = 50 mA - 200 mA

IOUT IOUT
100 mA/div 100 mA/div

200µs/div
200 µs/div 200 µs/div
Figure 11. Load Transient Response High Frequency (1.2 Figure 12. Load Transient Response Low Frequency (650
MHz) kHz)

EN
5 V/div

VIN = 3.3 V
VS = 12 V/300 mA
VS
5 V/div

IL CSS = 100 nF
1 A/div

2 ms/div
Figure 13. Soft-Start

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 TPS61085
www.ti.com SLVS859B – JUNE 2008 – REVISED DECEMBER 2014

9.3 System Examples

9.3.1 General Boost Application Circuits
L
6.8 µH

VIN D VS
3.3 V ±20% PMEG2010AEH 12 V/600 mA max
6 5
IN SW
CBY R1
1 µF 158 kΩ
CIN 16 V 3 2 COUT
EN FB
10 µF
16 V R2 2* 10 µF
18.2 kΩ 25 V
7 1
FREQ COMP
RCOMP
4 8 24 kΩ
GND SS
CCOMP
CSS 3.3 nF
TPS61085
100 nF

Figure 14. Typical Application, 3.3 V to 12 V (fS = 650 kHz)

L
3.3 µH

VIN D VS
3.3 V ±20% PMEG2010AEH 9 V/800 mA max
6 5
IN SW
CBY R1
1 µF 113 kΩ
CIN 16 V 3 2 COUT
EN FB
10 µF
16 V R2 2* 10 µF
18 kΩ 25 V
7 1
FREQ COMP
RCOMP
4 8 27 kΩ
GND SS
CCOMP
CSS 1.6 nF
TPS61085
100 nF

Figure 15. Typical Application, 3.3 V to 9 V (fS = 1.2 MHz)

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System Examples (continued)

L
6.8 µH

VIN D VS
3.3 V ±20% PMEG2010AEH 9 V/800 mA max
6 5
IN SW
CBY R1
1 µF 113 kΩ
CIN 16 V 3 2 COUT
EN FB
10 µF
16 V R2 2* 10 µF
18 kΩ 25 V
7 1
FREQ COMP
RCOMP
4 8 13 kΩ
GND SS
CCOMP
CSS 3.3 nF
TPS61085
100 nF

Figure 16. Typical Application, 3.3 V to 9 V (fS = 650 kHz)

RISO
10 kΩ

L
6.8 µH

VIN D BC857C VS
CBY
3.3 V ±20% PMEG2010AEH 12 V/300 mA
1 µF/16 V 6 5
IN SW
CISO
CIN 3 2 1 µF/ 25 V R1
10 µF EN FB 158 kΩ COUT
16 V 2*10 µF
7 1 25 V
FREQ COMP R2
RCOMP
18.2 kΩ
4 8 24 kΩ
GND SS
CCOMP
CSS 3.3 nF
TPS61085
100nF

Figure 17. Typical Application With External Load Disconnect Switch

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 TPS61085
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System Examples (continued)

9.3.2 TFT LCD Application Circuit
T2 VGH
BC850B 20 V/20 mA
3* VS
C4
T1 D2 100nF/ D4
VGL C6
BC857B 50V BAT54S
-7 V/ 20 mA -VS BAT54S 470 nF R10
50 V 13 kΩ
C2 C3 D5 C8
R8
C1 7 kΩ 470 nF 100 nF BAT54S 2*VS
C5 1 µF
1µF/ 25 V 50 V 35 V
100 nF D6 C7
35V D3 50 V
BAT54S BAT54S 470 nF D8
D1 50 V BZX84C 20V
BZX84C7V5
D7
BAT54S

L
3.3µH

VIN D VS
3.3 V± 20% PMEG2010AEH 9 V/500 mA
6 5
VIN SW
CBY
1 µF R1
CIN 16 V 3 2 113 kΩ COUT
EN FB
10 µF 2*10 µF
16 V R2
7 1 18 kΩ 25 V
FREQ COMP
RCOMP
4 8 27 kΩ
GND SS
CCOMP
CSS 1.6 nF
TPS 61085
100 nF

Figure 18. Typical Application 3.3 V to 9 V (fS = 1.2 MHz) for TFT LCD With External Charge Pumps
(VGH, VGL)

9.3.3 WHITE LED Application Circuits

L
6.8 µH

optional
CBY
VIN 1 µF/ 16 V D DZ 3S3P wLED VS
5 V ± 20% SL22 BZX84C 18 V LW E67C
6 5 500 mA
IN SW

CIN 3 COUT
EN
10 µF/ 2* 10 µF/
16 V 25 V
2
FB
RLIMIT
7 1 110 Ω RSENSE
FREQ COMP 15 Ω
RCOMP
4 8 24 kΩ
PGND SS
CCOMP
TPS61085 CSS 3.3 nF
100 nF

Figure 19. Simple Application (3.3 V Input - fsw = 650 kHz) for wLED Supply (3S3P)
(With Optional Clamping Zener Diode)

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SLVS859B – JUNE 2008 – REVISED DECEMBER 2014 www.ti.com

System Examples (continued)

L
6.8 µH

optional
CBY
VIN 1 µF/ 16 V D DZ 3S3P wLED VS
5 V ± 20% SL22 BZX84C 18 V LW E67C
6 5 500 mA
IN SW

CIN 3 COUT
EN
10 µF/ 2* 10 µF/
16 V 25 V
2
FB
RLIMIT
7 1 110 Ω RSENSE
FREQ COMP 15 Ω
PWM RCOMP
100 Hz to 500 Hz 4 8 24 kΩ
PGND SS
CCOMP
TPS61085 CSS 3.3 nF
100 nF

Figure 20. Simple Application (3.3V Input - fsw = 650 kHz) for wLED Supply (3S3P) With Adjustable
Brightness Control Using a PWM Signal on the Enable Pin
(With Optional Clamping Zener Diode)

L
6.8 µH

optional
CBY
VIN 1 µF/ 16 V D DZ 3S3P wLED VS
5 V ± 20% SL22 BZX84C 18 V LW E67C
6 5 500 mA
IN SW

CIN 3 COUT
EN
10 µF/ 2* 10 µF/
16 V 25 V
2 R1 RLIMIT
FB
180 kΩ 110 Ω
7 1 RSENSE
FREQ COMP 15 Ω
RCOMP R2
4 8 24 kΩ 127 kΩ
PGND SS
CCOMP
TPS61085 3.3 nF Analog Brightness Control
CSS 3.3 V ~ wLED off
100 nF 0 V ~ lLED = 30 mA (each string)
PWM Signal
Can be used swinging from 0 V to 3.3 V

Figure 21. Simple Application (3.3 V Input - fsw = 650 kHz) for wLED Supply (3S3P) With Adjustable
Brightness Control Using an Analog Signal on the Feedback Pin
(With Optional Clamping Zener Diode)

10 Power Supply Recommendations

The TPS61085 is designed to operate from an input voltage supply range between 2.3 V and 6.0 V. The power
supply to the TPS61085 needs to have a current rating according to the supply voltage, output voltage and
output current of the TPS61085.

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 TPS61085
www.ti.com SLVS859B – JUNE 2008 – REVISED DECEMBER 2014

11 Layout

11.1 Layout Guidelines

For all switching power supplies, the layout is an important step in the design, especially at high peak currents
and high switching frequencies. If the layout is not carefully done, the regulator could show stability problems as
well as EMI problems. Therefore, use wide and short traces for the main current path and for the power ground
tracks. The input capacitor, output capacitor, and the inductor should be placed as close as possible to the IC.
Use a common ground node for power ground and a different one for control ground to minimize the effects of
ground noise. Connect these ground nodes at the GND terminal of the IC. The most critical current path for all
boost converters is from the switching FET, through the rectifier diode, then the output capacitors, and back to
ground of the switching FET. Therefore, the output capacitors and their traces should be placed on the same
board layer as the IC and as close as possible between the IC’s SW and GND terminal.

11.2 Layout Example

VIN VOUT
FREQ

SW
SS

IN
8

GND TPS61085
1

4
COMP

PGND
FB

EN

Figure 22. TPS61085 Layout Example

Copyright © 2008–2014, Texas Instruments Incorporated Submit Documentation Feedback 19

Product Folder Links: TPS61085
TPS61085
SLVS859B – JUNE 2008 – REVISED DECEMBER 2014 www.ti.com

12 Device and Documentation Support

12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

20 Submit Documentation Feedback Copyright © 2008–2014, Texas Instruments Incorporated

Product Folder Links: TPS61085

 PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

TPS61085DGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 PMKI
& no Sb/Br)
TPS61085DGKT ACTIVE VSSOP DGK 8 250 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 PMKI
& no Sb/Br)
TPS61085DGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 PMKI
& no Sb/Br)
TPS61085PW ACTIVE TSSOP PW 8 150 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 61085
& no Sb/Br)
TPS61085PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 61085
& no Sb/Br)
TPS61085PWR ACTIVE TSSOP PW 8 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 85 61085
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TPS61085 :

• Automotive: TPS61085-Q1

NOTE: Qualified Version Definitions:

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 3-Aug-2017

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS61085DGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
TPS61085DGKT VSSOP DGK 8 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
TPS61085PWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 3-Aug-2017

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS61085DGKR VSSOP DGK 8 2500 367.0 367.0 35.0
TPS61085DGKT VSSOP DGK 8 250 210.0 185.0 35.0
TPS61085PWR TSSOP PW 8 2000 367.0 367.0 35.0

Pack Materials-Page 2
 PACKAGE OUTLINE
PW0008A SCALE 2.800
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE

C
6.6 SEATING PLANE
TYP
6.2

A PIN 1 ID 0.1 C
AREA
6X 0.65
8
1

3.1 2X
2.9
NOTE 3 1.95

4
5
0.30
8X
0.19
4.5 1.2 MAX
B 0.1 C A B
4.3
NOTE 4

(0.15) TYP
SEE DETAIL A

0.25
GAGE PLANE

0.75 0.15
0 -8 0.05
0.50

DETAIL A
TYPICAL

4221848/A 02/2015

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153, variation AA.

www.ti.com
 EXAMPLE BOARD LAYOUT
PW0008A TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE

8X (1.5)
8X (0.45) SYMM
(R0.05)
1 TYP
8

SYMM

6X (0.65)
5
4

(5.8)

LAND PATTERN EXAMPLE

SCALE:10X

SOLDER MASK METAL UNDER SOLDER MASK

METAL OPENING
OPENING SOLDER MASK

0.05 MAX 0.05 MIN

ALL AROUND ALL AROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

4221848/A 02/2015
NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
PW0008A TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE

8X (1.5)
SYMM (R0.05) TYP
8X (0.45)
1
8

SYMM

6X (0.65)
5
4

(5.8)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:10X

4221848/A 02/2015
NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

www.ti.com
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