SKB06N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode

C
 75% lower Eoff compared to previous generation
combined with low conduction losses
 Short circuit withstand time – 10 s G
 Designed for frequency inverters for washing machines, E
fans, pumps and vacuum cleaners
 NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
 Very soft, fast recovery anti-parallel Emitter Controlled PG-TO-263-3-2

Diode
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC for target applications
1

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat) Tj Marking Package

SKB06N60 600V 6A 2.3V 150C K06N60 PG-TO-263-3-2

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current IC A
TC = 25C 12
TC = 100C 6.9
Pulsed collector current, tp limited by Tjmax ICpul s 24
Turn off safe operating area VCE  600V, Tj  150C - 24
Diode forward current IF
TC = 25C 12
TC = 100C 6
Diode pulsed current, tp limited by Tjmax IFpul s 24
Gate-emitter voltage VGE 20 V
2
Short circuit withstand time tSC s
10
VGE = 15V, VCC  600V, Tj  150C
Power dissipation Ptot W
68
TC = 25C
Operating junction and storage temperature Tj , Tstg -55...+150 C
Soldering temperature (reflow soldering, MSL1) Ts 260 °C

1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.

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Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 1.85 K/W
junction – case
Diode thermal resistance, RthJCD 3.5
junction – case
1)
SMD version, device on PCB RthJA 40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 6 A
T j =2 5 C 1.7 2.0 2.4
T j =1 5 0 C - 2.3 2.8
Diode forward voltage VF V G E = 0V , I F = 6 A
T j =2 5 C 1.2 1.4 1.8
T j =1 5 0 C - 1.25 1.65
Gate-emitter threshold voltage VGE(th) I C = 25 0 A , V C E = V G E 3 4 5
Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V A
T j =2 5 C - - 20
T j =1 5 0 C - - 700
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 6 A - 4.2 - S
Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 350 420 pF
Output capacitance Coss V G E = 0V , - 38 46
Reverse transfer capacitance Crss f= 1 MH z - 23 28
Gate charge QGate V C C = 48 0 V, I C =6 A - 32 42 nC
V G E = 15 V
Internal emitter inductance LE - 7 - nH
measured 5mm (0.197 in.) from case
2)
Short circuit collector current IC(SC) V G E = 15 V ,t S C  10 s - 60 - A
V C C  6 0 0 V,
T j  1 5 0 C

1) 2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

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Switching Characteristic, Inductive Load, at Tj=25 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 C , - 25 30 ns
V C C = 40 0 V, I C = 6 A,
Rise time tr - 18 22
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G =50 , - 220 264
1)
Fall time tf L  = 18 0 nH , - 54 65
1)
C  = 25 0 pF
Turn-on energy Eon - 0.110 0.127 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.105 0.137
Total switching energy Ets reverse recovery. - 0.215 0.263
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 C , - 200 - ns
tS V R = 2 00 V , I F = 6 A, - 17 -
tF d i F / d t =2 0 0 A/ s - 183 -
Diode reverse recovery charge Qrr - 200 - nC
Diode peak reverse recovery current Irrm - 2.8 - A
Diode peak rate of fall of reverse d i r r /d t - 180 - A/s
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=150 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 5 0 C - 24 29 ns
V C C = 40 0 V, I C = 6 A,
Rise time tr - 17 20
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 50 , - 248 298
1)
Fall time tf L  =1 8 0n H, - 70 84
1)
C  = 2 50 pF
Turn-on energy Eon - 0.167 0.192 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.153 0.199
Total switching energy Ets reverse recovery. - 0.320 0.391
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 5 0 C - 290 - ns
tS V R = 2 00 V , I F = 6 A, - 27 -
tF d i F / d t =2 0 0 A/ s - 263 -
Diode reverse recovery charge Qrr - 500 - nC
Diode peak reverse recovery current Irrm - 5.0 - A
Diode peak rate of fall of reverse d i r r /d t - 200 - A/s
recovery current during t b

1)
Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

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Ic
30A
tp=2s

10A 15s
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

20A
TC=80°C 50s

TC=110°C 1A 200s
10A

Ic 1ms

DC
0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C, Tj  150C)
(Tj  150C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 50)

80W
Ptot, POWER DISSIPATION

IC, COLLECTOR CURRENT

60W 10A

40W

5A

20W

0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj  150C) (VGE  15V, Tj  150C)

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20A 20A

15A 15A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

VGE=20V
VGE=20V 15V
13V
10A 15V 10A
11V
13V
9V
11V
7V
9V
5V
7V
5A 5A
5V

0A 0A
0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25C) (Tj = 150C)

20A 4.0V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

18A
Tj=+25°C
IC = 12A
3.5V
16A -55°C
+150°C
IC, COLLECTOR CURRENT

14A
3.0V
12A

10A
IC = 6A
2.5V

8A
2.0V
6A

4A
1.5V
2A

0A 1.0V
0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 10V) saturation voltage as a function of junction
temperature
(VGE = 15V)

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t d(off)
td(off)

100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf tf

100ns

t d(on)
t d(on)

tr
tr
10ns 10ns
0A 3A 6A 9A 12A 15A 0 50  100  150 

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150C, VCE = 400V, (inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 50, VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

t d(off)
5.0V

100ns 4.5V
t, SWITCHING TIMES

tf
4.0V max.

3.5V
td(on)
3.0V typ.

tr 2.5V
min.
10ns 2.0V
0°C 50°C 100°C 150°C
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V, (IC = 0.25mA)
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)

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0.8mJ 0.6mJ
*) Eon and Ets include losses *) Eon and Ets include losses
E ts *
due to diode recovery. due to diode recovery.
E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

0.6mJ
0.4mJ

0.4mJ E off
E on *

E off 0.2mJ E on *

0.2mJ

0.0mJ 0.0mJ
0A 3A 6A 9A 12A 15A 0 50  100  150 
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150C, VCE = 400V, (inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 50, VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

0.4mJ
*) Eon and Ets include losses
due to diode recovery.
E ts *
E, SWITCHING ENERGY LOSSES

0.3mJ

0.2mJ E on *

E off
0.1mJ

0.0mJ
0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)

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25V 1nF

C iss
20V
VGE, GATE-EMITTER VOLTAGE

120V 480V

C, CAPACITANCE
15V

100pF

10V
C oss

5V

C rss
0V 10pF
0nC 15nC 30nC 45nC 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical gate charge Figure 17. Typical capacitance as a
(IC = 6A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)

25  s 100A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME

20  s 80A

15  s 60A

10  s 40A

5 s 20A

0 s 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 18. Short circuit withstand time as a Figure 19. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 600V, start at Tj = 25C) (VCE  600V, Tj = 150C)

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500ns 1000nC

400ns 800nC

Qrr, REVERSE RECOVERY CHARGE

IF = 12A
trr, REVERSE RECOVERY TIME

300ns IF = 12A 600nC

IF = 6A

IF = 3A
200ns 400nC
IF = 6A

IF = 3A
100ns 200nC

0ns 0nC
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s 50A/s 150A/s 250A/s 350A/s 450A/s 550A/s
d i F / d t, DIODE CURRENT SLOPE d i F / d t, DIODE CURRENT SLOPE
Figure 20. Typical reverse recovery time as Figure 21. Typical reverse recovery charge
a function of diode current slope as a function of diode current slope
(VR = 200V, Tj = 125C, (VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

12A 600A/s

10A 500A/s
d i r r /d t, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT

IF = 12A
8A 400A/s

IF = 6A
6A 300A/s
IF = 3A

4A 200A/s

2A 100A/s

0A 0A/s
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s 50A/s 150A/s 250A/s 350A/s 450A/s 550A/s
d i F / d t, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery current Figure 23. Typical diode peak rate of fall of
as a function of diode current slope reverse recovery current as a function of
(VR = 200V, Tj = 125C, diode current slope
Dynamic test circuit in Figure E) (VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)

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2.0V
12A

10A
I F = 12A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

8A

150°C 1.5V
6A

100°C I F = 6A
4A
25°C

2A -55°C

0A 1.0V
0.0V 0.5V 1.0V 1.5V 2.0V -40°C 0°C 40°C 80°C 120°C
VF, FORWARD VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 24. Typical diode forward current as Figure 25. Typical diode forward voltage as
a function of forward voltage a function of junction temperature

D=0.5
0
10 K/W
D=0.5
ZthJCD, TRANSIENT THERMAL IMPEDANCE

ZthJC, TRANSIENT THERMAL IMPEDANCE

0.2
0
10 K/W 0.2 0.1

0.05
0.1 -1
10 K/W
0.05 0.02
R,(K/W) , (s)
R,(K/W) , (s)
0.523 7.25*10-2 0.705 0.0341
0.02
0.550 6.44*10-3 0.561 3.74E-3
-1
10 K/W 0.835 7.13*10-4 0.01 0.583 3.25E-4
-2
1.592 7.16*10-5 10 K/W
0.01 R1 R2
R1 R2

single pulse
single pulse
C 1 =  1 / R 1 C 2 =  2 /R 2
C 1 =  1 / R 1 C 2 =  2 /R 2
-3
-2 10 K/W
10 K/W 1µs 10µs 100µs 1m s 10m s 100m s 1s
1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH tp, PULSE WIDTH

Figure 26. Diode transient thermal Figure 27. IGBT transient thermal
impedance as a function of pulse width impedance as a function of pulse width
(D = tp / T) (D = tp / T)

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PG-TO263-3-2

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i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance L =180nH
an d Stray capacity C  =250pF.

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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

13 Rev. 2.3 12.06.2013

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