Infineon BSC028N06LS3 G DataSheet v02 03 EN-3360788
Infineon BSC028N06LS3 G DataSheet v02 03 EN-3360788
Infineon BSC028N06LS3 G DataSheet v02 03 EN-3360788
MOSFET
OptiMOSTM3Power-Transistor,60V SuperSO8
8 5
6
Features 7
6 7
8
5
•Idealforhighfrequencyswitchingandsync.rec.
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance 1 4
3
•N-channel,logiclevel 2
3
2
1
•100%avalanchetested 4
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
S1 8D
S2
Table1KeyPerformanceParameters 7D
VDS 60 V G4 5D
RDS(on),max 2.8 mΩ
ID 174 A
1)
J-STD20 and JESD22
Final Data Sheet 1 Rev.2.3,2020-09-14
OptiMOSTM3Power-Transistor,60V
BSC028N06LS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 174 VGS=10V,TC=25°C
- - 110 VGS=10V,TC=100°C
Continuous drain current1) ID - - 133 A VGS=4.5V,TC=25°C
- - 84 VGS=4.5V,TC=100°C
- - 23 VGS=10V,TA=25°C,RthJA=50K/W2)
Pulsed drain current3) ID,pulse - - 696 A TC=25°C
Avalanche energy, single pulse 4)
EAS - - 298 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 139 TC=25°C
Power dissipation Ptot W
- - 2.5 TA=25°C,RthJA=50K/W2)
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 150 °C
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.9 K/W -
Device on PCB,
RthJA - - 62 K/W -
minimal footprint
Device on PCB,
RthJA - - 50 K/W -
6 cm2 cooling area2)
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.3,2020-09-14
OptiMOSTM3Power-Transistor,60V
BSC028N06LS3G
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=93µA
- 0.1 1 VDS=60V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 3.2 4.8 VGS=4.5V,ID=25A
Drain-source on-state resistance RDS(on) mΩ
- 2.3 2.8 VGS=10V,ID=50A
Gate resistance RG - 1.3 - Ω -
Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 10000 13000 pF VGS=0V,VDS=30V,f=1MHz
Output capacitance1) Coss - 1700 2300 pF VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance Crss - 70 - pF VGS=0V,VDS=30V,f=1MHz
VDD=30V,VGS=10V,ID=30A,
Turn-on delay time td(on) - 19 - ns
RG=3.3Ω
VDD=30V,VGS=10V,ID=30A,
Rise time tr - 17 - ns
RG=3.3Ω
VDD=30V,VGS=10V,ID=30A,
Turn-off delay time td(off) - 77 - ns
RG=3.3Ω
VDD=30V,VGS=10V,ID=30A,
Fall time tf - 19 - ns
RG=3.3Ω
Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 31 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 17 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate to drain charge Qgd - 10 - nC VDD=30V,ID=50A,VGS=0to4.5V
Switching charge Qsw - 24 - nC VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total 1)
Qg - 59 79 nC VDD=30V,ID=50A,VGS=0to4.5V
Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total1) Qg - 132 175 nC VDD=30V,ID=50A,VGS=0to10V
Output charge 1)
Qoss - 83 110 nC VDD=30V,VGS=0V
1)
Defined by design. Not subject to production test
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.3,2020-09-14
OptiMOSTM3Power-Transistor,60V
BSC028N06LS3G
Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 106 A TC=25°C
Diode pulse current IS,pulse - - 696 A TC=25°C
Diode forward voltage VSD - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time trr - 47 - ns VR=30V,IF=30A,diF/dt=100A/µs
Reverse recovery charge Qrr - 58 - nC VR=30V,IF=30A,diF/dt=100A/µs
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation Diagram2:Draincurrent
160 200
140 175
120 150
100 125
Ptot[W]
ID[A]
80 100
60 75
40 50
20 25
0 0
0 50 100 150 200 0 20 40 60 80 100 120 140 160
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100
1 µs
10 µs
0.5
2 100 µs
10
1 ms
0.2
ZthJC[K/W]
ID[A]
DC 0.05
100 0.02
0.01
single pulse
-1 -2
10 10
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T
Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
400 10
5V 9
350 10 V 4.5 V
8
300
3V
7
3.2 V
250 3.5 V
6
RDS(on)[mΩ]
4V
ID[A]
4V
200 5
4.5 V
4
150 5V
3
3.5 V 6V
100
2 10 V
3.2 V
50
1
3V
2.8 V
0 0
0 1 2 3 0 100 200 300 400
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
300 250
200
200
150
gfs[S]
ID[A]
100
100
50
150 °C 25 °C
0 0
0 1 2 3 4 5 0 40 80 120 160
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C
Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
5 2.5
4 2.0
930 µA
3 max 1.5
RDS(on)[mΩ]
93 µA
VGS(th)[V]
typ
2 1.0
1 0.5
0 0.0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
5
10 103
25 °C
25 °C, max
150 °C
150 °C, max
104 Ciss
102
Coss
C[pF]
IF[A]
3
10
101
102
Crss
101 100
0 20 40 60 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj
Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 12
30 V
10
12 V
25 °C 8 48 V
100 °C
125 °C
VGS[V]
IAV[A]
101 6
100 0
100 101 102 103 0 40 80 120 160
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD
60
VBR(DSS)[V]
50
40
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm/inches
RevisionHistory
BSC028N06LS3 G
Revision:2020-09-14,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2020-09-14 Update current rating and footnotes
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