APT13GP120BSC

1200V

POWER MOS 7 IGBT

®

A new generation of high voltage power IGBTs. Using punch-through

technology and a proprietary metal gate, this IGBT has been optimized for very
TO-247
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
• Low Conduction Loss • 100 kHz operation @ 600V, 10A G
C C
• Low Gate Charge • 50 kHz operation @ 600V, 16A E

• Ultrafast Tail Current shutoff • RBSOA Rated G

E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT13GP120BSC UNIT

VCES Collector-Emitter Voltage 1200

VGE Gate-Emitter Voltage ±20 Volts
VGEM Gate-Emitter Voltage Transient ±30
I C1 Continuous Collector Current @ TC = 25°C 41
I C2 Continuous Collector Current @ TC = 110°C 20 Amps
I CM Pulsed Collector Current 1 @ TC = 150°C 50
RBSOA Reverse Bias Safe Operating Area @ TJ = 150°C 50A @ 960V
PD Total Power Dissipation 250 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 450µA) 1200

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) 3 4.5 6
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) 3.3 3.9
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C) 3.0
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
450
I CES µA
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
3500
I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA
2-2004

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Rev A

APT Website - http://www.advancedpower.com

050-7417
 DYNAMIC CHARACTERISTICS APT13GP120BSC
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Cies Input Capacitance Capacitance 1145
Coes Output Capacitance VGE = 0V, VCE = 25V 90 pF
Cres Reverse Transfer Capacitance f = 1 MHz 15
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 7.5 V
Qg Total Gate Charge 3 VGE = 15V 55
Qge Gate-Emitter Charge VCE = 600V 8 nC
Qgc Gate-Collector ("Miller ") Charge I C = 13A
26
RBSOA Reverse Bias Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = 50 A
15V, L = 100µH,VCE = 960V
td(on) Turn-on Delay Time Inductive Switching (25°C) 8
tr Current Rise Time VCC = 600V 12
VGE = 15V ns
td(off) Turn-off Delay Time 28
I C = 13A
tf Current Fall Time 35
4
R G = 5Ω
Eon1 Turn-on Switching Energy 114
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 5 120 µJ
Eoff 6
Turn-off Switching Energy 155
td(on) Turn-on Delay Time Inductive Switching (125°C) 8
tr Current Rise Time VCC = 600V 12
VGE = 15V ns
td(off) Turn-off Delay Time 65
I C = 13A
tf Current Fall Time 205
4 R G = 5Ω
Eon1 Turn-on Switching Energy 223
TJ = +125°C
Turn-on Switching Energy (Diode) 5
Eon2 235 µJ
Eoff Turn-off Switching Energy 6 850

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT
RΘJC Junction to Case (IGBT) .50
°C/W
RΘJC Junction to Case (DIODE) 1.1
WT Package Weight 5.90 gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.
2-2004
Rev A
050-7417
TYPICAL PERFORMANCE CURVES APT13GP120BSC
40 40
VGE = 15V. VGE = 10V.
250µs PULSE TEST 250µs PULSE TEST
35 <0.5 % DUTY CYCLE 35 <0.5 % DUTY CYCLE

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

TC = -55°C
30 30

25 25
TC = -55°C
20 20

15 15
TC = 125°C TC = 125°C
10 10
TC = 25°C TC = 25°C
5 5

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) FIGURE 2, Output Characteristics (VGE = 10V)
40 16
250µs PULSE TEST IC = 13A
<0.5 % DUTY CYCLE

VGE, GATE-TO-EMITTER VOLTAGE (V)

TJ = 25°C
35 14
IC, COLLECTOR CURRENT (A)

VCE = 240V
30 12
VCE = 600V
25 10
TJ = -55°C
20 8
TJ = 25°C VCE = 960V
15 6
TJ = 125°C
10 4

5 2

0 0
0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
6 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

5 IC = 26A
IC = 26A 4
IC = 13A
4
IC = 13A 3

3 IC= 6.5A IC= 6.5A

2
2

1
1
TJ = 25°C. VGE = 15V.
250µs PULSE TEST 250µs PULSE TEST
<0.5 % DUTY CYCLE <0.5 % DUTY CYCLE
0 0
6 8 10 12 14 16 -55 -25 0 25 50 75 100 125
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, JUNCTION TRMPERATURE (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN

1.10 60
IC, DC COLLECTOR CURRENT(A)

50
VOLTAGE (NORMALIZED)

1.05
40

1.00 30

20
2-2004

0.95
10
Rev A

0.90 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
050-7417

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT13GP120BSC
10 100

td (OFF), TURN-OFF DELAY TIME (ns)

td(ON), TURN-ON DELAY TIME (ns) 8 80
VGE =15V,TJ=125°C
VGE= 15V
6 60

4 40

2 VCE = 600V 20 VCE = 600V

TJ = 25°C, TJ =125°C RG = 5Ω VGE =15V,TJ=25°C
RG = 5Ω L = 100 µH
L = 100 µH
0 0
5 10 15 20 25 30 5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
30 300
RG = 5Ω, L = 100µH, VCE = 600V RG = 5Ω, L = 100µH, VCE = 600V

25 250

20 200
tr, RISE TIME (ns)

tf, FALL TIME (ns)

TJ = 125°C, VGE = 10V or 15V

15 150

10 100
TJ = 25 or 125°C,VGE = 15V TJ = 25°C, VGE = 10V or 15V
5 50

0 0
5 10 15 20 25 30 5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
800 1600
VCE = 600V VCE = 600V
TJ = 125°C,VGE =15V
EOFF, TURN OFF ENERGY LOSS (µJ)

VGE = +15V VGE = +15V

EON2, TURN ON ENERGY LOSS (µJ)

RG = 5 Ω 1400 RG = 5 Ω

TJ = 125°C, VGE = 10V or 15V

600 1200

1000

400 800

600
TJ = 25°C, VGE = 10V or 15V
200 400

200
TJ = 25°C,VGE =15V
0 0
5 10 15 20 25 30 5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
1800 1600
VCE = 600V
VGE = +15V
1600
SWITCHING ENERGY LOSSES (µJ)

SWITCHING ENERGY LOSSES (µJ)

1400 RG = 5 Ω
Eoff, 26A Eoff,26A
1400
1200
VCE = 600V
1200 VGE = +15V
TJ = 125°C 1000
Eon2, 26A
1000 Eoff, 13A
Eoff, 13A 800
800 Eon2,26A
600
600
2-2004

Eoff, 6.5A Eoff, 6.5A

400
400

200 Eon2, 13A 200 Eon2,13A

Rev A

Eon2,6.5A
Eon2, 6.5A
0 0
0 10 20 30 40 50 50 2575 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
050-7417

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES APT13GP120BSC
3,000 60
Cies
1,000
50
500
C, CAPACITANCE ( F)
P

IC, COLLECTOR CURRENT (A)

40
100 Coes
30

Cres 20
10

10

1 0
0 10 20 30 40 50 0 200 400 600 800 1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Minimim Switching Safe Operating Area

0.60

0.50
ZθJC, THERMAL IMPEDANCE (°C/W)

0.9

0.40
0.7

0.30
0.5
Note:
0.20

PDM
0.3 t1

t2
0.10
0.1 Duty Factor D = t1/t2
0.05 SINGLE PULSE Peak TJ = PDM x ZθJC + TC
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

181
FMAX, OPERATING FREQUENCY (kHz)

RC MODEL 100
Junction
temp. ( ”C)

0.216 0.600F
50 Fmax = min(f max1 , f max 2 )
Power
(Watts) 0.05
f max1 =
t d (on ) + t r + t d(off ) + t f
0.284 0.161F
Pdiss − Pcond
Case temperature TJ = 125°C f max 2 =
TC = 75°C E on 2 + E off
D = 50 %
TJ − TC
VCE = 600V
Pdiss =
10
RG = 5 Ω R θJC
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 5 10 15 20 25 30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
2-2004
Rev A
050-7417
 APT13GP120BSC

Gate Voltage
APT5SC120 10%

TJ = 125°C

td(on)

V CC IC V CE tr
Drain Current
90%

10%
5%
DrainVoltage
A
Switching Energy 5%
D.U.T.

Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions

VTEST
*DRIVER SAME TYPE AS D.U.T.
90%

Gate Voltage TJ = 125°C

A
td(off)
V CE
DrainVoltage
IC
100uH
90% V CLAMP B
tf

10% 0
Switching Energy
A
Drain Current
DRIVER* D.U.T.

Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit
2-2004
Rev A
050-7417
 APT13GP120BSC

SILICON CARBIDE SCHOTTKY RECTIFIER DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions APT13GP120BSC UNIT
IF(AV) Maximum Average Forward Current (TC =146°C, Duty Cycle = 0.5) 5
IF(RMS) RMS Forward Current 11 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10µs) 100

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IF = 13A 2.5
VF Forward Voltage IF = 26A 4.5 Volts
IF = 13A, TJ = 175°C 6.5
DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

C Capacitance (VR = 400V, TC = 25°C, F = 1 MHz) - 50 pF

QC Total Capacitive Charge (VR = 1200V, IF = 5A, diF/dt = 500A/µs, TC = 25°C) - 28 nC

tfr Forward Recovery Time 1 N/A

ns
trr Reverse Recovery Time 1 N/A
dv/
dt Peak Diode Recovery (VR = 960V, di/dt = 1000A/µs, TC = 25°C) 50 V/ns

1 As a majority carrier device, there is no reverse recovery charge.

APT Reserves the right to change, without notice, the specifications and information contained herein.
1.20
Z JC, THERMAL IMPEDANCE (°C/W)

1.00 0.9

0.80 0.7

0.60 0.5
Note:
PDM

0.40 t1
0.3
t2
0.20 Duty Factor D = t1/t2
0.1
θ

SINGLE PULSE Peak TJ = PDM x ZθJC + TC

0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

RC MODEL
Junction
temp (°C)

0.700 °C/W 0.00244 J/°C

Power
2-2004

(watts)

0.400 °C/W 0.0380 J/°C

Rev A

Case temperature (°C)

050-7417

FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL

 APT13GP120BSC
30 100

25
80
IF, FORWARD CURRENT

Ir, REVERSE CURRENT

20 TJ = 25°C
TJ = 175°C
60
TJ = 125°C TJ = 75°C

(µA)
(A)

15
TJ = 75°C TJ = 125°C
40
TJ = 25°C
10 TJ = 175°C
TJ = -55°C
20
5

0 0
0 2 4 6 8 10 12 14 16 0200 400 600 800 1000 1200140016001800
VF, ANODE-TO-CATHODE VOLTAGE (V) VR, CATHODE-TO-ANODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage Figure 27. Reverse Current vs. Reverse Voltage
12 500
TJ = 25°C
VR = 400V

10

CJ, JUNCTION CAPACITANCE

IF, (AV) FORWARD CURRENT

400

8
300

(pF)
(A)

200
4

100
2

0 0
25 50 75 100 125 150 175 .4 1 10 100 400
Case Temperature (°C) VR, REVERSE VOLTAGE (V)
Figure 28. Current Derating Figure 29. Junction Capacitance vs. Reverse Voltage

T0-247 Package Outline

4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)

20.80 (.819)
Collector
(Cathode)

21.46 (.845)
3.55 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) Gate
1.01 (.040)
1.40 (.055) Collector
2-2004

(Cathode)
Emitter
(Anode)
Rev A

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
050-7417

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.