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EEE 435 Lecture 3

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EEE 435

Optical Communications

Dr. Md. Forkan Uddin


Proessor
Dept. of EEE, BUET

1
Optical Source
 Requirements to an optical source
1. The light output should be highly directional
2. Source should be linear
3. Emit light at wavelengths where the fiber has low losses and
low dispersion and where the detectors are efficient.
4. Simple signal modulation over a wide bandwidth
5. Must couple sufficient optical power
6. Narrow spectral bandwidth in order to minimize dispersion
in the fiber.
7. Stable optical output (environment variation)
8. Cheap and highly reliable
2
Basic Concept of Light Emission
 The energy states of atom electrons are discrete
 When an atom gains sufficient energy it moves to upper state
 When an atom drops from an upper energy state to lower energy
state it releases/emits energy
 The frequency/wavelength of the emitted energy depends on
the energy difference of the states
 Energy emits:

 If E is such that the emitted wavelength is in the range of light


then light is emitted.

3
Types of Emission
Spontaneous emission: atom returns to the lower energy state in an
entirely random manner
Stimulated emission: when a photon having an energy equal to the
energy difference between the two states (E2 − E1) interacts with the
atom in the upper energy state causing it to return to the lower state with
the creation of a second photon.

4
Electron Distribution in Semiconductor
 Valence and conduction bands separated by a forbidden energy gap or
bandgap Eg
 Thermal excitation raises some electrons from the valence band into the
conduction band, leaving empty hole states in the valence band
 For a semiconductor in thermal equilibrium the energy-level occupation is
described by the Fermi–Dirac distribution function
p-n Materials

6
p-n Junction

 Normally no electrons or holes flow between the two types of materials

7
Operating Principle of LED
 When external positive voltage is applied, depletion region and
potential barrier reduce
 Electrons move from n to p and holes move from p to n, i.e.,
minority carrier increases in both p and n materials
 The increased minority carriers leads to recombination of carrier
across the band gap

8
Operating Principle of LED
 Due to electron-hole recombination, the energy released
approx equal to band gap energy
 The released energy may be radiative or non radiative
 For non-radiative recombination, energy is dissipated as heat and
vibration
 For radioactive radiation, wavelength is determine as

 Spontaneous emission occurs in LED at forward bias

9
LED Emmission

10
Types of Recombination
 Two types: direct band gap and indirect band gap
 The crystal momentum p is related to the wave vector k for an
electron in a crystal by p = 2πhk,
 where h is Planck’s constant

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Direct and Indirect Band Gap Material

12
Population Inversion

 Under the conditions of thermal equilibrium the lower energy level E1


of the two-level atomic system contains more atoms than the upper energy level
E2
 To achieve optical amplification it is necessary to create a non
equilibrium distribution of atoms such that the population of the upper
energy level is greater than that of the lower energy level (i.e. N2 > N1).
This condition, which is known as population inversion,
13
How to Create Population Inversion?
 Excite atoms into the upper energy level E2
 Achieved using an external energy source and is referred to as
‘pumping’
 A common method used for pumping involves the
application of intense radiation (e.g. from an optical flash
tube or high-frequency radio field).

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Stimulated Emission
from Population Inversion
 Three –level or four-level system
 Rapid decay are non radiative
 Stimulated radiative emission for lasing

15
3-level vs 4-level System
 In 3-level system, the pumping power requirement is very
high
 Why???
 The terminal state of the laser transition is ground state
 More than the half of atoms must be pumped to achieve
population inversion

 The 4-level system overcome this problem and the pumping


power requirement is not high

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Semiconductor Laser
 Heavily dopped p-n junction works as LASER (Light
Amplification by Stimulated Emission of Radiation)

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LASER

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LASER

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LASER Materials
 p-n form with suitable characteristics for carrier injection
 Efficient electroluminescence
-High probability of radiative transmision
 Useful emission wavelength
-Suitable for detector
-Less attenuation and dispersion in fiber

20
Semiconductor LASER Structure
 Gain guided laser

Current flow through Current flow through


Non-resistive region diffused p-type region
Problems: Nonlinear output
High threshold current

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Index Guided LASER
 The problem gain guided laser are reduced
 A ridge waveguide is produced above active region

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Quantum Well Laser

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Distributed Feedback Laser
 Distributed feedback (DFB) laser and distributed bragg reflector (DBR)
laser are single frequency lasers
 Optical grating are used to change the refractive index periodically
 In DFB, grating is used over entire active region
 In DBR, the grating is etched near cavity ends

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Single frequency operation

25
Effect of Temperature on LASER
 Threshold current density

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Non semiconductor Laser
 Both crystalline and glass wave guiding structures doped with
rare earth ions (e.g. neodymium) show potential for use as
optical communication sources
 The Nd :YAG laser is yttrium–aluminum–garnet
(Y3Al5O12) doped with the rare earth metal ion
neodymium (Nd3+) to form the Nd :YAG structure

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Nd:YAG laser
Advantages:
 Single-mode operation near 1.064 and 1.32 μm, making it a
suitable source for single-mode systems
 A narrow linewidth (<0.01 nm) which is useful for reducing
dispersion on optical links
 4 level system, less pumping power required
 A potentially long lifetime
Disadvantage:
 The device must be optically pumped.
 Costly
 The device cannot take advantage of the well-developed
technology associated with semiconductors and integrated
28 circuits.
LED vs LASER
 Advantage of LED over LASER
 Simple fabrication
 Low cost
 High reliability
 Less temperature dependence (does not depend on threshold
current)
 Simple drive circuit
 Linearity
Disadvantage of LED over LASER
 Lower power coupled to fiber
 Lower modulation bandwidth
 More harmonic distortion

29
LED and LASER Characteristics

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Optical Amplifier
 Optical signal attenuates with distance
 Signal need to be amplified for long distance communication
 Semiconductor devices can convert an optical signal into an
electrical signal, amplify it and reconvert the signal back to an
optical signal. However, this procedure has several disadvantages:
 Costly
 Noise is introduced after each conversion in analog signals (which
cannot be reconstructed)
 Restriction on bandwidth, wavelengths and type of optical signals
being used, due to the electronics
 Optical amplifier (OA) amplify optical signal in optical domain

31
Optical Amplification
 Amplification gain: Up to a factor of 10,000 (+40 dB)
 It generates its own noise source known as Amplified Spontaneous
Emission (ASE) noise.

Weak signal Amplified signal


Pin Optical Pout
Amplifier
ASE ASE
(G)

Pump Source

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Optical Amplification - Spectral Characteristics

(unamplified signal)
Single channel

(amplified signal)
Power
Power

ASE

Wavelength Wavelength
WDM channels
(unamplified signal)

(amplified signal)
Power

Power
ASE

Wavelength Wavelength
33
Optical Amplification - Noise Figure
 Required figure of merit to compare amplifier noise performance
 Defined when the input signal is coherent

Input signal  to noise ratio ( SNRi )


Noise Figure (NF) 
Output signal  to noise ratio ( SNRo )

NF is a positive number, nearly always > 2 (I.e. 3 dB)


Good performance: when NF ~ 3 dB
NF is one of a number of factors that determine the overall
BER of a network.
34
Types
 Two types:
 Semiconductor optical amplifier (SOA)
 SLA: semiconductor laser amplifier
 Fiber Amplifiers
 EDFA: Erbium Doped Fibre Amplifier
FRA: Fibre Raman Amplifier
 TDFA: Thulium Doped Fibre Amplifier

35
Semiconductor Optical Amplifier

 Active region with width w, height d and length L


 The active region is populated inverted
 Photons are injected at one end of the SOA
 By stimulated emission, the incident signal will be amplified!
 By stimulated emission, one photon gives rise to another photon: the total is
two photons. Each of these two photons can give rise to another photon: the
total is then four photons. And it goes on and on...
36
Features SOA
 Poor noise performance: they add a lot of noise to the
signal!
 Matching with the fibre is also a problem!
 Temperature sensitive
 However, they are small and cheap!

37
Fiber Amplifiers
 Fiber amplifiers are less temperature sensitive
 Costy
 Less noise

 Population inversion is with rare earth material, eg. Nd, Er


 Stimulated emission occurs when light is pumped and the input
light is amplified

38
Fiber Amplifier
 Can be used as power amplifier at source, OA in repeater and
preamplifier at receiver

39
Erbium doped fiber amplifer (EDFA)
 Erbium doped fiber amplifer (EDFA) is mostly used in
optical communication

Coupler Isolator
Input
1480 or 980
nm Pump Output
Laser
Erbium Doped Fiber

40
EDFA

 A pump optical signal is added to an input signal by a WDM coupler


 Within a length of doped fibre part, the pump energy is transferred
to excite doped fiber to higher energy state and amplify input signal
by stimulated emission
 For operation circa 1550 nm the fibre dopant is Erbium
Input Isolator Isolator
Output
WDM
Erbium Doped
Fibre

Pump Source
= Fusion Splice

41
Power level EDFA

Power level
Power
interchange
between
pump and
980 nm 1550 nm data signals 980 nm 1550 nm
signal data signal signal data signal

Isolator Isolator
Input Output
WDM
Erbium Doped
Fibre

= Fusion Splice Pump Source


42

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