STTH 1512
STTH 1512
Features
A K
■ Ultrafast, soft recovery
■ Very low conduction and switching losses K
■ High frequency and/or high pulsed current A A
operation
K K
■ High reverse voltage capability
DOP3I DO247
■ High junction temperature STTH1512W
STTH1512PI
■ Insulated package: DOP3I
– Electrical insulation = 2500 V rms
– Capacitance = 12 pF K
A
A A
Description
A
K
The high quality design of this diode has
produced a device with low leakage current, D2PAK TO-220AC
STTH1512G STTH1512D
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term Table 1. Device summary
reliability. Symbol Value
Such demanding applications include industrial IF(AV) 15 A
power supplies, motor control, and similar
mission-critical systems that require rectification VRRM 1200 V
and freewheeling. These diodes also fit into Tj 175 °C
auxiliary functions such as snubber, bootstrap,
VF (typ) 1.20 V
and demagnetization applications.
trr (typ) 53 ns
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
1 Characteristics
Reverse leakage Tj = 25 °C 15
IR(1) VR = VRRM µA
current Tj = 125 °C 10 100
Tj = 25 °C 2.10
VF(2) Forward voltage drop Tj = 125 °C IF = 15 A 1.25 1.90 V
Tj = 150 °C 1.20 1.80
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
30 130
δ = 0.05 120 Tj=150°C
(typical values)
110
25 δ=1
100
90
20
80
70
15
60
Tj=25°C
50 Tj=150°C (maximum values)
10 (maximum values)
T 40
30
5 20
IF(AV)(A) δ=tp/T tp 10 VFM(V)
0 0
0 2 4 6 8 10 12 14 16 18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.8 40
IF=2 x IF(AV)
0.7 35
0.6 30 IF=IF(AV)
IF=0.5 x IF(AV)
0.5 25
0.4 20
0.2 10
0.1 5
tp(s) dIF/dt(A/µs)
0.0 0
1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus Figure 6. Reverse recovery charges versus
dIF/dt (typical values) dIF/dt (typical values)
trr(ns) Qrr(µC)
600 5.5
VR=600V
VR=600V
Tj=125°C
5.0 Tj=125°C
550
4.5
500 IF=2 x IF(AV)
IF=2 x IF(AV)
4.0
450
IF=IF(AV)
3.5
400 IF=IF(AV)
IF=0.5 x IF(AV) 3.0
350
2.5
300 2.0 IF=0.5 x IF(AV)
250 1.5
200 1.0
150 0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
100 0.0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
2.5 1.75
S factor
1.50
2.0 1.25
1.00
1.5 trr
0.75
IRM
0.50
1.0 QRR
0.25
Tj(°C)
dIF/dt(A/µs) 0.00
0.5 25 50 75 100 125
0 50 100 150 200 250 300 350 400 450 500
Figure 9. Transient peak forward voltage Figure 10. Forward recovery time versus dIF/dt
versus dIF/dt (typical values) (typical values)
VFP(V) tfr(ns)
800
40
IF=IF(AV)
IF=IF(AV) VFR=1.5 x VF max.
Tj=125°C 700 Tj=125°C
35
30 600
25 500
20 400
15 300
10 200
5 100
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 100 200 300 400 500 0 100 200 300 400 500
Figure 11. Junction capacitance versus Figure 12. Thermal resistance junction to
reverse voltage applied ambient versus copper surface
(typical values) under each lead
C(pF) Rth(j-a)(°C/W)
1000 80
F=1MHz Epoxy printed circuit board FR4,
VOSC=30mVRMS
Tj=25°C 70 copper thickness = 35 µm
60
50
100 40
30
20
10
VR(V)
10 SCU(cm²)
0
1 10 100 1000
0 5 10 15 20 25 30 35 40
2 Package information
F L4 34.60 1.362
M E
G L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V 5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
16.90
10.30 5.08
1.30
3.70
8.90
L4
L2 16.40 typ. 0.645 typ.
F L4 13.00 14.00 0.511 0.551
M L5 2.65 2.95 0.104 0.116
E
L6 15.25 15.75 0.600 0.620
G
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
3 Ordering information
4 Revision history
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