BJT Characteristics (Ce Configuration)

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Exp.

No: 4 BJT CHARACTERISTICS (CE CONFIGURATION)


Date:

AIM:- To draw the input and output characteristics of transistor connected in CE


configuration.

APPARATUS:-
 Transistor-BC 107
 Resistor – 1KΩ
 Dual RPS (0-30 V)
 Voltmeters (0- 20 V) – 2
 Ammeters (0 – 200 mA, 0 – 200 µA)
 Bread board
 Connecting wires
 CRO and Probes

THEORY

A transistor is a three terminal device. The terminals are emitter, base, collector. In
common emitter configuration, input voltage is applied between base and emitter terminals
and output is taken across the collector and emitter terminals. Therefore the emitter terminal
is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As compared to
CB arrangement IB increases less rapidly with VBE. Therefore input resistance of CE circuit is
higher than that of CB circuit.

The output characteristics are drawn between I C and VCE at constant IB, the collector
current varies with VCE up to few volts only. After this the collector current becomes almost
constant, and independent of VCE. The value of VCE up to which the collector current changes
with VCE is known as Knee voltage. The transistor always operated in the region above Knee
voltage, IC is always constant and is approximately equal to IB.

The current amplification factor of CE configuration is given by


∆ IC
β=
∆ IB

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CIRCUIT DIAGRAM
COMMON EMITTER TRANSISTOR CHARACTERISTICS

MODEL GRAPHS:-

INPUT CHARACTERISTICS: OUPUT CHARACTERISTICS:

PROCEDURE:-

TO FIND THE INPUT CHARACTERISTICS:

 Connections are made as per the circuit diagram.


 Initially the supply voltages VBB and VCC are kept at 0V.
 VCE Voltage is kept at 0V and VBB is varied in steps and corresponding current IB is noted
down along with VBE.
 The experiment is repeated for VCE =1 volt and 2 volts.
 For a fixed value of VCE graph is plotted between VBE and IB.

2
TO FIND THE OUTPUT CHARACTERISTICS:

 Connections are made as per the circuit diagram.


 Initially the supply voltages VBB and VCC are kept at 0V.
 IB current is kept at 10µA and VCC is varied in steps and corresponding current IC is noted
down along with VCE.
 The experiment is repeated for IB=20µA, IB= 40µA and IB=60 µA.
 For a fixed value of IB graph is plotted between VCE and IC.

OBSERVATION:-

INPUT CHARACTERISTICS:
S.NO VCE=0V VCE=1V VCE=2V

VBE(V) IB(µA) VBE(V) IB(µA) VBE(V) IB(µA)

3
OUTPUT CHARACTERISTICS:

S.N IB=10µA IB=20µA IB=40µA IB=60µA


O VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

PRECAUTIONS:-
1. All the connections should be correct.
2. Parallax error should be avoided while taking the readings from the Analog meters.

RESULT:-

Viva Questions:
 What is the range of β for the transistor?
 What are the input and output impedances of CE configuration?
 Identify various regions in the output characteristics.
 What is the relation between α and β ?
 Define current gain in CE configuration.
 Why CE configuration is preferred for amplification?
 What is the phase relation between input and output?
 Draw diagram of CE configuration for PNP transistor.
 What is the power gain of CE configuration?
 What are the applications of CE configuration?

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