TPCA8026

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)

TPCA8026
Lithium-Ion Battery Applications
Unit: mm
Notebook PC Applications
1.27 0.4 ± 0.1
Portable Equipment Applications 8
5
0.05 M A

5.0 ± 0.2
6.0 ± 0.3
0.15 ± 0.05
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.)
4 0.595
• High forward transfer admittance: |Yfs| =100 S (typ.) 1

• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) A

0.95 ± 0.05

0.166 ± 0.05
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
5.0 ± 0.2

0.05 S

1.1 ± 0.2
S

Absolute Maximum Ratings (Ta = 25°C) 1 4

0.6 ± 0.1
Characteristic Symbol Rating Unit

3.5 ± 0.2
4.25 ± 0.2
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
8 5

0.8 ± 0.1
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 45
Drain current A 1,2,3: SORCE 4: GATE
Pulsed (Note 1) IDP 135 5,6,7,8:DRAIN

Drain power dissipation (Tc = 25℃) PD 45 W JEDEC ⎯

Drain power dissipation (t = 10 s)
PD 2.8 W JEITA ⎯
(Note 2a)
TOSHIBA 2-5Q1A
Drain power dissipation (t = 10 s)
PD 1.6 W Weight: 0.069 g (typ.)
(Note 2b)
Single-pulse avalanche energy
EAS 263 mJ
(Note 3)
Circuit Configuration
Avalanche current IAR 45 A
Repetitive avalanche energy
EAR 3.4 mJ
(Tc = 25℃) (Note 4) 8 7 6 5
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in
1 2 3 4
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to case

Rth (ch-c) 2.78 °C/W
(Tc = 25℃)

Thermal resistance, channel to ambient

Rth (ch-a) 44.6 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 78.1 °C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPCA Part number

8026
∗ Lot No.

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)

(a) (b)

Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, IAR = 45 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: ∗ Weekly code: (Three digits)

Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture
(The last digit of the year)

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Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V
VGS = 4.5 V, ID = 23 A ⎯ 2.7 4.5
Drain-source ON-resistance RDS (ON) mΩ
VGS = 10 V, ID = 23 A ⎯ 1.8 2.2
Forward transfer admittance |Yfs| VDS = 10 V, ID = 23 A 50 100 ⎯ S
Input capacitance Ciss ⎯ 4200 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1000 ⎯ pF

Output capacitance Coss ⎯ 1400 ⎯

Rise time tr ⎯ 15 ⎯
ID = 23A
VGS 10 V
VOUT
Turn-on time ton 0V ⎯ 30 ⎯

RL = 0.65Ω
Switching time 4.7 Ω ns
Fall time tf ⎯ 36 ⎯

VDD ≈ 15 V
Turn-off time toff ⎯ 111 ⎯
Duty ≤ 1%, tw = 10 μs
Total gate charge
Qg ⎯ 113 ⎯
(gate-source plus gate-drain)
VDD ≈ 24 V, VGS = 10 V, ID = 45 A nC
Gate-source charge 1 Qgs1 ⎯ 13 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 42 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 135 A

Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V ⎯ ⎯ −1.2 V

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ID – VDS 10 8 ID – VDS
50 100
10 3.8 3.6 4 3.8 3.6
8
4 3.4 4.5
40 80 5

(A)
4.5
(A)

Common source
6
5 Ta = 25°C
Common source Pulse test

ID
ID

6
30 Ta = 25°C 60
Pulse test 3.4

Drain current
Drain current

3.2
20 40

3.2

3
10 20
3
VGS = 2.8 V
VGS = 2.8 V
0 0
0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5

Drain−source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

100 0.4
Common source Common source
VDS = 10 V Ta = 25°C
VDS (V)

Pulse test Pulse test

80 0.32
(A)
ID

60 0.24
Drain−source voltage
Drain current

40 0.16
100
Ta = −55°C
ID = 45 A
20 0.08
25 23

12
0 0
0 1 2 3 4 5 6 0 2 4 6 8 10

Gate−source voltage VGS (V) Gate−source voltage VGS (V)

|Yfs| – ID RDS (ON) – ID

1000 100
Common source
Ta = 25°C
Pulse test
Drain−source ON-resistance
Forward transfer admittance

100
Ta = −55°C
RDS (ON) (mΩ)
|Yfs| (S)

10 25 10
100

4.5
1
Common source
VDS = 10 V
Pulse test VGS = 10 V

0.1 1
0.1 1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Ta IDR – VDS

8 1000

Common source

(A)
Pulse test
Drain-source ON-resistance

10 4.5 3
6

IDR
100 1
RDS (ON) (mΩ)

Drain reverse current

ID = 12, 23, 45 A
VGS = 0 V
4 10

VGS = 4.5 V

2 ID = 12, 23, 45 A 1
Common source
Ta = 25°C
VGS = 10 V
Pulse test
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1

Ambient temperature Ta (°C) Drain−source voltage VDS (V)

Capacitance – VDS Vth – Ta

10000 3
Vth (V)

Ciss 2.5
(pF)

1000 Coss 2
Gate threshold voltage
C

Crss
Capacitance

1.5

100 1

Common source Common source

VGS = 0 V 0.5 V
DS = 10 V
f = 1 MHz ID = 1mA
Ta = 25°C Pulse test
10 0
0.1 1 10 100 −80 −40 0 40 80 120 160

Drain−source voltage VDS (V) Ambient temperature Ta (°C)

Dynamic input/output
characteristics
50 20
Common source
ID = 40 A
VDS (V)

(V)

Ta = 25°C
40 16
Pulse test
VGS
Drain−source voltage

30 12
Gate−source voltage

VDS VDD = 6V
12

24
20 8

VGS
10 4

0 0
0 20 40 60 80 100 120 140 160 180

Total gate charge Qg (nC)

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rth − tw
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃ (2)
Transient thermal impedance

100
(1)
rth (°C/W)

10

(3)

Single pulse

0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

PD – Ta PD – Tc
3 50
(1) Device mounted on a
(W)

(W)

glass-epoxy board (a) (Note 2a)

(1)
(2) Device mounted on a
2.5
glass-epoxy board (b) (Note 2b) 40
PD

PD

t = 10 s

2
Drain power dissipation

Drain power dissipation

30
(2)
1.5

20
1

10
0.5

0 0
0 40 80 120 160 0 40 80 120 160

Ambient temperature Ta (°C) Case temperature Tc (°C)

Safe operating area

1000

ID max (Pulse) *
1 ms *
100
(A)

ID max (continuous)
t = 10 ms *
ID
Drain current

10 DC operation
Tc = 25 °C

1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature. VDSS max
0.1
0.1 1 10 100

Drain−source voltage VDS (V)

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RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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