XIIPhyQPSET3 2023 24

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16

SECTION - A 16x 1=
l. An electric dipole of dipole moment p is kept in a uniform electric field

E. The amount of work done to rotate it from the
position of stabi
equilibrium to that of unstable equilibrium will be 1
(A) 2 pE (B) -2 pE
(C) pE (D) zero
.2. An infinite long straight wire having a charge density 1 is
axis in x-y plane. The Coulomb force on a point charge q at akept along Yy
point P (3, 0)
will be 1
(A) attractive and qa qa
repulsive and

(C) attractive and qà (D) repulsive and qa


3. The phase difference between electric field E and magnetic field B in an
electromagnetic wave propagating along Z-axis is - 1
(A) zero (B)
(C) 2
(D)
4

4. In Balmer series of hydrogen atom, as the wavelength of spectral lines


decreases, they appear 1
(A) equally spaced and equally intense.
(B) further apart and stronger in intensity.
(C) closer together and stronger in intensity.
(D) closer together and weaker in intensity.
5. Two long straight parallel conductors A and B, kept at a distance r, carry
current Iin opposite directions. A third identical conductor C, kept at a
distance from A carry current I, in the same direction as in A. The

net magnetic force on unit length of C is 1

, towards A (B) , towards B


(A) 2r
2r

towards A (D) , towards B


(C) 4Tr
4r
2155/4/3 5 P.T.0.
6. A coil of N turns is placed in a
magnetic field B such that D
is perpendicular to the plane of the coil. B
2
changes with time as
B=Bo cos -t where T is time period. The magnitude of emf induced
T
in the coil will be
maximum at 1
nT
(A) t= nT
(B) t =
4
nT
(C) t (D) t= nT
2
Here, n =1, 2, 3, 4, ..
7. A circular loop A of radius R carries a current I.
Another circular loop B of
R
radius r is placed
20 concentrically
in the plane of A. The magnetic
flux linked with loop B is proportional to 1
(A) R (B) R
(C) R (D) R2
8. A galvanometer of resistance 1002 is converted into an ammeter of range
(0 1A) using a resistance of 0.1 2. The ammeter will show full scale
deflection for a current of about 1
(A) 0.1 mA (B) 1mA
(C) 10 mA (D) 0.1 A
9. The r.m.s. value of acurrent given by i=(i, cos ot + i, sin ot) is -
1
(A) (B) (ij-i)
1 1
(C)
V2 (í+i)
(D)

10. The quantum nature of light explains the observations on photoelectric


effect as - 1
(A) there is a minimum frequency of incident radiation below which no
electrong are emitted.
(B) the maximum kinetic energy of photoelectrons depends only on the
frequency of incident radiation.
(C) when the metal surface is illuminated, electronsare ejected from the
surface after sometime.
(D) the photoelectric current is independent of the intensity of incident
radiation.
2155/4/3 7
P.T.0.
1
n the
One as
1
1 1 P.T.0.
with (D) the not
Select that velocities energy
another the are
charged,
positive
for more
direction. is
given and is is mean it
varies (R) (R) in semiconductors
when
(R). light conserved is
are (C) Reason Reason
notsamerandom in not negatively light
increases zinc
positive atom
positive two
(B),
Reason
statements does light, resistance
is
yellow
is of
material hydrogen (A), and and thelarge
it surface
in of It arep-type
andand conductor,
codes true true false.
labelled false. over diffraction
fringe.energy
is
semiconductors. of
moving
small
large 1 n 1
n2 of
diffraction. metals the photon
coefficient
diamagnetic are are in
of 8
(D)
r,
c the (A).is are
Assertion superposed
from
(R) dark carriers
model Ln 16, other R) (A).(R) (R) a are a
from fringe.
bright
(B) (D) (B) ReasonReasonReason in and because in
ejectedwith
to Assertion Reasonconductor a
drift producing and carriers
Bohr 13 thequestions p-type
interference temperature charge zinc.
a is associated
for number and andof and electrons velocity interference
in and and happens arelight. of
susceptibility explanation
true the a
produces for charge
majority function
orbit (A)of (A) region Electrons
small
and
negative
negative (A)these explanation(A) in negative
charged.
yellow
positively
questions Assertion is Assertion
Assertion When drift Energy
nth (A) electrons In This
: The
Assertion one of The
to The by work
of Assertion
correct : of :
electrons.
(A)in and : and the
regionphenomena 16.
(A):
Assertion
and (r) answer (A) (R): (A) : irradiated
:
magnetic
below
given correct reduces(R) (R)whereas (R)the
n²For both both both free
Assertion Assertion metals
Assertion
large radius nC
T,
c than
r, labelled the If If all Reason Reason Reason Reason
Note
: correctIf If
2155/4/3
The(A)(C) The (A) (C) (A) (B) (C) (D)
as
12. 13. 14. 15.
11.
2
= 2
2 0I theobserver 2
2 P.T.0.
x distance 2 2
5
sphere and
magnifying accelerated glass
a the
Find by the and
objective in
grazes
immersed increases
of
equilateral biasing
glass an
figure. resistance cases
by the
the deuteron just
a seen the
telescope, conductor two
forward
in in If ray
completely
cm)shown of V an the
as m. length of
emergent
medium. coefficient
20 bubble 1.00 a Find of ) in
and characteristics
refracting face a in
= as of
(CB1.5 is focal proton is
resistance
diode
SECTION
-B the 1 2
is thethe
oneprism
=1.5 lensthe temperaturejunction
B indexof
point image BC a on thatof
piece
find of the index
OR a respectively,normally I-V 11
for 19, wavelengths observed the
at refractive eye
When
refractive p-nits
the which
trapped adjustment,
is The a draw
of andtelescope u. °C-1, of
incident
is °C. diagram
index
andposition P objectivelens. Broglie V, it the
at Also
is the
eyepiece 27 10-4
medium, temperature
bubble and Find at biasing.
cm the is refractive 2.0x
value
normal circuit
40 andat
P.point of de V, light face.
between
air radius
nature power of potential transparent conductor
is reverse
ratio of of its the
adjacent the
An In rayprism of Draw
The by Find
25% 2155/4/3
(b) A (ii)
(a)
18. 19. 20. 21.,
17.
21
7x3=
3
3 3 3 3 P.T.0.
or and withdomain. far a withtwofor
system by
N, kept expression
ferromagnetism connected N Write
turns
a magnetic are detected
of 2R experiment.
having
inductance the
and are
of A.
They particles
Obtain
unit. l,
length concept R shell
Explain and
radii experiment.
SI o. M,
mutual of Geiger-Marsden
graph.
scattered 10
2
its
SECTION
-C same the of density
potential and 10
2
Write ? B
r). using
materials andcharge this A 10
2 D M
theof this points
inductance. ( OR
forsolenoids
of from S2 20 Q 13
r, diagrams,A final variationin battery. 30
and shells between B<
20
2$
expression approach:calculate 6V
ferromagnetic same
for in draw S2
A
r, expression (0) the 2,
10 10
2Z,
coaxial
radii spherical showingcan
mutual suitable the effective
resistance
by S
angle 8
to youclosest network, supplied
an
longof charged
DefineDerive and conducting graph that
twoN, areof an scattering
of
help Obtain distance given power
conclusions
What and the
the
(i)(a)
22. (i1) Draw the
Twoapart
wire.
the the 2155/4/3
(b) In (1) (ii)
23. 24. 25.
3
3 3 2x4=8 x14
4 P.T.0.
as initially
curren of U235 pureis Read of thermal
amount
small the n-type
with p-n
during of in is wave
Vo mode fission application
onlydiode
water. 92 of
a =
force of 1g
questions. to it
a
full
carries follow. related basically
place pass
v per In AOr doping a
velocity their contain those in property,
or
of welding. atoms released that semiconductor.
p-typetake theto half-wave
and to based are
by is currents
magnitude in a
axis with must
similar
fusion. the
questions
with it drift for
diode
junction
considerably in ends this
energy Study
XX moving during all dopedconcentration
oven and
carriers. to in
allows
semiconductor
andveryif the voltages,
along and P(0,
r) microwave ayerage Case
released the extrinsicp-ndiffusion Due
glasses
fission
are SECTION
-
D when
answer at diode
a biased.
provided
direction are
kept starts differ
reasons: oPuz39
Si,
into
charge 15
0! with nuclearis The 380 processes, junctionalternating
is MeV), and an hole
or converted
A forward
r) in 94 to contacts
conductor Electromagnetic
waves mask of ? 29 Ge and
becomes junction.
P(0,
the givinginteraction
with
matter'.
heated fission paragraph intringic
properties
between p-n
charge. (in numberlike electron is
Find
point face energy semiconductorbe
Two metallic
A it rectify
X' followingbe undergo
impurity, p-n voltage.
when
straight the to wear Differentiate following
Questions of canimpurity.
at figure. items fission
much
the a to configuration.
by MeV.
180 semiconductor
concentration
q Welders equilibrium, of withexternal
direction
used
oPuz89
chargeexperienced
infinite the F'ood How formation
junction
in The the suitable suitable
Explain :Note pure widely
shown 2155/4/3
A (iüi) (a)
28. (b) an one
An (ii) A
I. (1)
29.
26. 27.
o becomes
a pentavalent 4 P.T.0.
holes holes 1s
required in p-region. n-region. the formation
thileneonwithmatemiol
aacross
turn, lesst nd
carriers
and of depends
basic helne 4x
is and at materialpower
it semiconductor small.
large. small.
frequency of
surfaces:
energy into into large. surfaces lenses
image
within
charge n-region p-region the a
about lens of
holes n-region p-region is is Hz Hz
m-3
current
junction
are
currentare in hence itsindex
of
desired
the 100 100 of a
is eV
0.01 doped
intrinsic 10231022 into
applied,
currents
currents The twoformula
two of of Combination
dopant1.1
impurity, eV of into andpower)refractive
- from
fromn n-region. willHz, Hz, by
be
rectifier. index
number
the x p-region. drift boundedthe of
is 4 x5 junction
p-region n-region drift
ap-n is 25 50 formula
lenses
diffuse diffuse the at (orrefractive
the(B) (D)of It andand driftvolt respectively
in (D) drift
(B)
cm-3.electrons
number of
(B) (D) successively
Applying lengthTheused.
from
pentavalent Tt)full-wave
the p-n into into the
small
formation
large
the
medium maker's converging
from holes from holes and and (100 medium. 17
electron result,
1010 a n-region p-region OR focal light
the of of and
diffuse diffuse and is is
current diffusionthem
diffusion spherical. the
number formation during
current
Initially
the
sina optical lens
surface
Theand of
with
bound
temperature,
x
2.0a fromelectronselectrons 0.5 and wavelength
surrounding
from across as obtained.
surfacesor
As
doped is The
electronselectrons thetheV=
diffusion
diffusion Hz Hz transparent
rectifier be spherical
known
atoms.m-3 m-3
1022
1x the diffuse diffuse should obtain
to
diverging
weakly semiconductor both both bothboth
voltagevoltage
50 50
0.001
eV
(A)0.72
eV
(C) 1024
cm-3, Hz,
is During Hz, be its thethe
formula
given half-wave
Ge the impurity
x (A) (B)(C) D) (A)(B)(C)D) 25 50
output which canof on magnification
single
103 2 ac a to
When (A)(C) is radii depends
free a 8x (A) (C) (a) (iüi)
() An formularespect
At (ii) lens a
of
oneaby lens, the 2155/4/3
(1i) (iv) A
DU.
P.T.O.
Zk.. the
e its mirror
as principal
cm
apart a
diverging
O and of along at
power index surface.
decreases. formed
R concave
are parts the
The lenslens
ofright
thin lensrefractive its 40 to be
coaxially of
contact. lightof identical
a parallel
will right
a convex curvatureand
and water. image
D incident cm cm, cm,
20
cmin -5 D the coming
3 ofa two 10
20 coaxially
(B)
(D) 2 4 3
(B)
7 5 in of into length
are
placedfinal 10
length surfaces (D) lens of
dipped radius M
(B) (D)
wavelength light
T'he
is cut cm
40
lens equiconvex focal
placed
focal is in is of lens. 19
two 15
length
cm
lens of beam OR
lens decrease
this L the L lenslens
of are of the the the lens A on
lens of is:
curvature of of
cm an (A)
increases
whenwhen when figure.
lens
length with axis.
principal incident left left
converging of convex
15 length cm, cm,
combination
is the focal
of
M distance
of
length decreases in
increases
increases
-n
(A) of focal of thin shown
is 10 20
D radii material focal axis (A) (C)
focal
thin 6 A
4 3 the 5 3 3 2
(C) The If (A) (C) The (B) (C) (D) (a)
A of
(iii) (iv) 2155/4/3
(i) (ii)
15
5
convex
convex 40 =
b 5 is plateits in themJ P.T.0.
distance
from x to 5
3 t for (1)If 40 capacitors. due 2E0 figure. net
a Another
axis thickness
of first
V.
of image expression are point= the
capacitor 100 E
a connectedcases in
at a by (2)
principal final virtual,
12
cmvirtual,
18
cm of the at shown
it. coaxially and source
two given and
on plate of E
the an
field as cube,
incident K are thecapacitance is
of Obtain dc region
the placed distance parallel capacitances
constant a
in sheetmeanings.
electric
combination by the
to across
is is (B) (D) SECTION
-E plane given meters.
the through
parallel A.
cm the the in
cm and a area
dielectric parallel usual
16 12 of find that infinite is in placed
different OR region
coming nature
length plates
plate the show their
respectively, is flux 21
length x is cube.
of in in and electric
(2)stored
charged
haveain cm
and law,
focal
light The cm cm
focal slabbetween of N/C 10 the
then
capacitors E i
Gauss's symbols
L,. 24 32 d capacitance.
dielectric mJ
energy uniformlyfield 2) in side theby
of of of real,real, separation
and + is
(5x2 of
enclosed
beam from inserted 250 Electric E cube (1)
L L will
be where
lenslenscm (A)(C) series Using = where
Two totaland Calculate
A A a E A charge
(b) 31.
(a)
() (ii) (b)
(1) (ii)
(iv) 2155/4/3
5 5 5 5
object and compoundandmagnification using mm 3 is mm
are
used.
of the a
series and radiusr
withwith
objective cm It
5 variation of
of working construction
an reflection slits. of light a freguency
associated
2 of
of equation. is S, thedistance frequency
image the aby eyepiece and of
transformer.
of
the from wavelength showing the
orbitmoment
both produced of S, a the explain the
the mirror Find ray. laws
verify slits awayat explainan
of for the resonant
with
is in magnetic
formation infinity. anda them fringe graph real
the used objectof the diagram, proton
? length
instruments 1.0 circuit a
obtain
lenses wavefront experiment, Find the in briefly
and bright
placed a loss a for
small at around
the focal
formed fringe. which
PlotLCR suitable
energy diagram, expression 23
multi-component
Hence, objective.
OR principle fourth OR
for a is depends:
series generator.
diagram optical of The a
between slit screen dark on
transformer.
step-up revolving
mirror. magnification factors a of ofa
200.is double the
suitable
diagram.
source.
applied
a.c.
of causes Obtain
image
the Huygen's second a
in the that of help helpac is
is by Differentiate thecircuit
rayconvex eyepiece microscope Young's
and impedance of electronthe
electron.
are produced
final the Mention the two theworkingspeedv.
observed
a apart from With Write With
Draw State LCR
a WhytheThe the An
by In a
(iii) (iii) (ii) (iii) ()(b) (ii)
i(a)
)32. (ii) (1) (ii)
(b) (a)
33.
i)
255/4/3

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