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    2SA1186 InchangeSemiconductor

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    Remigijus Surkus

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    © All Rights Reserved
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    2SA1186 InchangeSemiconductor

    Uploaded by

    Remigijus Surkus
    7 views2 pages

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    2SA1186_InchangeSemiconductor

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    7 views2 pages

    2SA1186 InchangeSemiconductor

    Uploaded by

    Remigijus Surkus

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    INCHANGE Semiconductor

    isc Silicon PNP Power Transistor 2SA1186

    DESCRIPTION
    ·High Collector-Emitter Breakdown Voltage-
    V(BR)CEO= -150V(Min)
    ·Good Linearity of hFE
    ·Complement to Type 2SC2837
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·For audio and general purpose applications

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage -150 V

    VCEO Collector-Emitter Voltage -150 V

    VEBO Emitter-Base Voltage -5 V

    IC Collector Current-Continuous -10 A

    IB Base Current-Continuous -2 A

    Collector Power Dissipation


    PC 100 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc Silicon PNP Power Transistor 2SA1186

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified
    UNI
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX
    T
    Collector-Emitter Breakdown
    V(BR)CEO IC= -25mA ; IB= 0 -150 V
    Voltage
    Collector-Emitter Saturation
    VCE(sat) IC= -5.0A; IB= -0.5A -2.0 V
    Voltage

    ICBO Collector Cutoff Current VCB= -150V ; IE=0 -100 μA

    IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μA

    hFE DC Current Gain IC= -3A ; VCE= -4V 50 180

    COB Output Capacitance IE= 0 ; VCB= -80V;f= 1.0MHz 110 pF

    fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 60 MHz

    Switching times

    ton Turn-on Time 0.25 μs

    IC= -5A ,RL= 12Ω,


    tstg Storage Time 0.8 μs
    IB1= -IB2= -0.5A,VCC= -60V

    tf Fall Time 0.2 μs

     hFE Classifications

    O P Y

    50-80 80-130 130-180

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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