DCR1660Y

DCR1660Y
Phase Control Thyristor
Target Information
DS5499-1.2 February 2002

FEATURES KEY PARAMETERS

■ Double Side Cooling
VDRM 6500V
IT(AV) 1665A
■ High Surge Capability ITSM (max) 28000A
■ Low Inductance Internal Construction dV/dt 1000V/µs
dI/dt 300A/µs

APPLICATIONS
■ High Power Converters
■ DC Motor Control
■ High Voltage Power Supplies

VOLTAGE RATINGS

Part and Ordering Repetitive Peak Conditions

Number Voltages
VDRM and VDRM
V
DCR1660Y65 6500 Tvj = 0˚ to 125˚C,
DCR1660Y64 6400 IDRM = IRRM = 150mA,
DCR1660Y63 6300 VDRM, VRRM tp = 10ms,
DCR1660Y62 6200 VDSM & VRSM = Outline type code: Y
DCR1660Y61 6100 VDRM & VRRM + 100V
DCR1660Y60 6000 respectively (See Package Details for further information)
Lower voltage grades available. Fig. 1 Package outline

ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1660Y63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.

1/9
www.dynexsemi.com
DCR1660Y

CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.

Symbol Parameter Test Conditions Max. Units

Double Side Cooled

IT(AV) Mean on-state current Half wave resistive load 1665 A

IT(RMS) RMS value - 2600 A

IT Continuous (direct) on-state current - 2478 A

Single Side Cooled

IT(AV) Mean on-state current Half wave resistive load 1112 A

IT(RMS) RMS value - 1746 A

IT Continuous (direct) on-state current - 1556 A

Tcase = 80˚C unless stated otherwise.

Symbol Parameter Test Conditions Max. Units

Double Side Cooled

IT(AV) Mean on-state current Half wave resistive load 1323 A

IT(RMS) RMS value - 2077 A

IT Continuous (direct) on-state current - 1944 A

Single Side Cooled

IT(AV) Mean on-state current Half wave resistive load 876 A

IT(RMS) RMS value - 1376 A

IT Continuous (direct) on-state current - 1196 A

2/9
www.dynexsemi.com
 DCR1660Y

SURGE RATINGS

Symbol Parameter Test Conditions Max. Units

ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125˚C 22.0 kA

I2t I2t for fusing VR = 50% VRRM - 1/4 sine 2.4 x 106 A2s

ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125˚C 28.0 kA

I2t I2t for fusing VR = 0 3.92 x 106 A2s

DYNAMIC CHARACTERISTICS

Symbol Parameter Test Conditions Min. Max. Units

IRRM/IRRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 300 mA

dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs

dI/dt Rate of rise of on-state current From 67% VDRM, Repetitive 50Hz - 150 A/µs

Gate source 30V, 15Ω, Non-repetitive - 300 A/µs

tr ≤ 0.5µs, Tj = 125˚C

VT(TO) Threshold voltage At Tvj = 125˚C - 1.2 V

rT On-state slope resistance At Tvj = 125˚C - 0.61 mΩ

tgd Delay time VD = 67% VDRM, gate source 30V, 15Ω 0.5 1.5 µs

tr = 0.5µs, Tj = 25˚C

tq Turn-off time IT = 1000A, tp = 1ms, Tj =125˚C, 1500 - µs

VR = 100V, dIRR/dt = 10A/µs,

VDR = 67% VDRM,

dVDR/dt = 25V/µs linear

IL Latching current Tj = 25˚C, VD = 10V - 600 mA

IH Holding current Tj = 25˚C, VG–K = ∞ - 200 mA

3/9
www.dynexsemi.com
DCR1660Y

THERMAL AND MECHANICAL RATINGS

Symbol Parameter Test Conditions Min. Max. Units

Rth(j-c) Thermal resistance - junction to case Double side cooled DC - 0.0095 ˚CW

Single side cooled Anode DC - 0.019 ˚CW

Cathode DC - 0.019 ˚CW

Rth(c-h) Thermal resistance - case to heatsink Clamping force 50kN Double side - 0.002 ˚CW

(with mounting compound) Single side - 0.004 ˚CW

Tvj Virtual junction temperature On-state (conducting) - 135 ˚C

Reverse (blocking) - 125 ˚C

Tstg Storage temperature range –55 125 ˚C

Fm Clamping force 45.0 55.0 kN

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol Parameter Test Conditions Max. Units

VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V

IGT Gate trigger current VDRM = 5V, Tcase = 25oC 300 mA

VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V

VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V

VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V

VRGM Peak reverse gate voltage - 5 V

IFGM Peak forward gate current Anode positive with respect to cathode 10 A

PGM Peak gate power See table fig. 4 150 W

PG(AV) Mean gate power - 5 W

4/9
www.dynexsemi.com
 DCR1660Y

CURVES

2500 8000
Tj = 125˚C

7000

2000
Instantaneous on-state current, IT - (A)

6000

Mean power dissipation - (W)

5000
1500

4000

1000
3000

2000
500
dc
1000 1/2 wave
3 phase
6 phase
0 0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 500 1000 1500 2000 2500 3000
Instantaneous on-state voltage, VT - (V) Mean on-state current, IT(AV) - (A)

Fig.2 Maximum (limit) on-state characteristics Fig.3 Power dissipation

5/9
www.dynexsemi.com
DCR1660Y

10
Upper limit
9 Lower limit

7
Gate trigger voltage, VGT - (V)

6 Table gives pulse power PGM in Watts

Preferred gate drive area
Pulse Width Frequency Hz
5
µs 50 100 400
100 150 150 150
4 Tj = -40˚C 200 150 150 125
500 150 150 100
Tj = 25˚C 1000 150 100 25
3
10000 20 - -
Tj = 125˚C
2

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Gate trigger current, IGT - (A)

Fig.4 Gate characteristics

25
Upper Limit
Lower Limit
5W
10W
20
20W
50W
Gate trigger voltage, VGT - (V)

100W

15

10

0
0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics

6/9
www.dynexsemi.com
 DCR1660Y

0.1
10000
Max Conditions:
Tj = 125˚C
Min IT = 550A
VR = 100V Anode side cooled
Total stored charge, QRA3 - (µC)

Thermal impedance - (˚C/W)

0.01
Double side cooled

1000

IT 0.001
QRA3
Conduction Effective thermal resistance
Junction to case ˚C/W
25% IRR Double side Anode side
dI/dt IRR d.c. 0.0095 0.019
Halfwave 0.0105 0.020
100 3 phase 120˚ 0.0112 0.0207
0.1 1.0 10 100 6 phase 60˚ 0.0139 0.0234
Rate of decay of on-state current, dI/dt - (A/µs) 0.0001
0.001 0.01 0.1 1 10 100
Time - (s)

Fig.6 Stored charge Fig.7 Maximum (limit) transient thermal impedance -

junction to case (˚C/W)

90 4.5 30
ITSM (VR = 0) Surge current (VR = 0)
ITSM (VR = 50% VRRM) Surge current (VR = 50% VRRM)
80 4.0
I2t (VR = 0)
25
I2t (VR = 50% VRRM)
Peak half sine wave on-state current - (kA)

70 3.5
Peak half sine on-state current - (kA)

60 3.0 20
I2t value - (A2s x 106)

50 2.5
15
40 2.0

30 1.5 10

20 1.0
5
10 0.5

0 0.0 0
1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60
Pulse length, half sine wave - (ms) Number of cycles @ 50Hz

Fig.8 Sub-cycle surge currents Fig.9 Multi-cycle surge currents

7/9
www.dynexsemi.com
DCR1660Y

PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Hole Ø3.6 x 2.0 deep (One in each electrode)

Cathode tab

Cathode
Ø112.5 max
Ø73 nom

Ø1.5
37.7
36.0

Gate

Ø73 nom
Anode

Nominal weight: 1600g

Clamping force: 50kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring

Package outine type code: Y

8/9
www.dynexsemi.com
 DCR1660Y

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com

HEADQUARTERS OPERATIONS CUSTOMER SERVICES

DYNEX SEMICONDUCTOR LTD Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom. SALES OFFICES
Tel: 00-44-(0)1522-500500 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Fax: 00-44-(0)1522-500550 Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5499-1 Issue No. 1.2 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

9/9
www.dynexsemi.com