MS5N100/S/FT/FE/FD

N-channel 1000V – 3.5Ω - 5A

General features

Type VDSS(@Tjmax) RDS(on) ID

MS5N100 1000 V < 4.2 Ω 5A
MS5N100S 1000 V < 4.2 Ω 5A
MS5N100FT 1000 V < 4.2 Ω 5A
MS5N100FE 1000 V < 4.2 Ω 5A
MS5N100FD 1000 V < 4.2 Ω 5A
 Extremely high dv/dt capability
 100% avalanche tested
 Gate charge minimized
 Very low intrinsic capacitances
 Very good manufacturing repeatibility

Applications
 Switching application

Order codes
Partnumber Marking Package
MS5N100 MS5N100 TO-3PH
MS5N100S MS5N100S TO-220F
MS5N100FT MS5N100FT TO-220
MS5N100FE MS5N100FE TO-263/D2PAK
MS5N100FD MS5N100FD TO-252/DPAK

Electrical ratings
Absolute maximum ratings
Value Unit
Parameter Symbol TO-220/
TO-3PH TO-220FP TO-263
TO-252
Drain-source voltage（VGS=0) VDS 1000
V
Gate-source voltage VGS ±30
Drain current（continuous）at
ID 5
TC=25℃
A
Drain current（continuous）at
ID 3
TC=100℃
Drain current（pulsed） IDM 18 18 18 18
Total dissipation at TC=25℃ PTOT 125 30 68 56 W
Derating factor 1 0.24 1 0.63 W/℃

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 MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
Drain source ESD
VESD(GS) 4000 V
(HBM-C=100pF,R=1.5KΩ）
Peak diode recovery voltage
dv/dt 4.5 V/ns
slope
Insulation withstand
voltage(RMS)from all three
VISO 2500 v
leads to external heat sink
(t=1s TC=25℃）
Operating junction temperature TJ
-55 to 175 ℃
Storage temperature TSTG

Thermal data
Value Unit
Parameter Symbol TO-220/
TO-220FP TO-3PH TO-263
TO-252

Thermal resistance junction

Rthj-case 4.2 1 1 0.86 ℃/W
max

Thermal resistance
Rthj-case 5 A
junction-ambient max

Maximum lead temperature

T 350 mJ
for soldering purpose

Avalanche characteristics
Parameter Symbol Value Unit

Avalanche current repetitive or not-repetitive

IAR 5 A
(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS 350 mJ
(starting Tj=25℃ Id=lar Vdd=50V)

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N-channel 1000V – 3.5Ω - 5A

Electrical characteristics (TCASE=25℃ unless otherwise specified)

On/off states
Parameter Symbol Test conditions Min Typ Max Unit

Drain-source breakdown voltage V(BR)DSS ID=1mA VGS=0 1000 V

Zero gate voltage drain current VDS=Max rating 1 μA

IDSS
(VGS=0) TC=125℃ 50 μA

Gate body leakage current (VGS=0) IGSS VGS=±20V ±10 μA

Gate threshold voltage VGS(th） VDS=VGS ID=100μA 3 3.5 4.5 V

Static drain-source on resistance RDS(on） VGS=10V ID=1.75A 3.5 4.2 Ω

Dynamic
Parameter Symbol Test conditions Min Typ Max Unit
Forward
gfs VDS = 15 V, ID = 1.75A 3 S
transconductance
Input capacitance Ciss 1154
Output capacitance Coss 106
VDS=25V,f=1MHz,VGS=0
Reverse transfer
Crss 21.3 pF
capacitance
Equivalent Output
Coss eq. VGS=0,VDS=0 to 800V 46.8
capacitance
f=1MHz Gate DC Bias=0
Gate input resistance Rg Test signal level=20mV 2.2 Ω
open drain

Total gate charge Qg 42

VDD=800V,ID=3.5A
Gate-source charge Qgs 7.3 nC
VGS=10V
Gate-drain charge Qgd 21.7
Turn-on delay time td(on) 22.5
Rise time tr VDD = 500 V, ID = 1.75 A, 7.7
ns
Turn-off-delay time td(off) RG = 4.7 Ω, VGS = 10 V 51.5
Fall time tf 19
Source Drain Diode
Parameter Symbol Test conditions Min Typ Max Unit
Source Drain Current ISD 5 A

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 MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A
Source Drain
ISDM 20 A
Current(Pulsed)

Forward On Voltage VSD ISD=5A,VGS=0V 1.2 V

Reverse Recovery Time Trr ISD=4A,di/dt=100A/μS 500 ns

Reverse Recovery
Qrr VR=100V,Tj=150℃ 4.3 uC
Charge
Reverse Recovery
IRRM 20 A
Current

Electrical characteristics (curves)

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N-channel 1000V – 3.5Ω - 5A

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N-channel 1000V – 3.5Ω - 5A

Package outline dimension

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N-channel 1000V – 3.5Ω - 5A

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 MS5N100/S/FT/FE/FD
N-channel 1000V – 3.5Ω - 5A

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