EV Charging Block Diagram

3-Phase Rectifier Secondary

Main DC-DC
/PFC Rectification

BLDC
AUX Power
Fan Motor

Voltage Gate Current Gate

Sense Driver Sense Driver ADC
Brushless DC
Motor Control

µCU Isolation
Full Product Recommendation Table

Solution Description
Touch Screen LCD
Interactive Block Diagram Communications Display
Controller Backlighting
(onsemi.com)
 3-Phase Rectifier / PFC
Topology 1 Topology 2
D1 D2 D3
Diode Diode Diode

D7 D8 D9 D10 D11 D12

Switch Switch
Switch
Switch Switch
Switch
Switch Switch
Switch

Diode Diode Diode

D13 D14 D15 D16 D17 D18

Gate Driver Gate Driver Gate Driver D4 D5 D6

µCU Gate Driver Gate Driver Gate Driver

Topology 1 – Less components, higher efficiency, 1200 V diodes, requires 6 switches. µCU

Topology 2 – Cost effective, 600 V diodes, requires only 3 switches but diodes are in Return to main block diagram
series, hence the lower efficiency.
Main DC-DC / Secondary Rectification: LLC Configuration

FET FET Diode Diode

+
Gate Driver

FET FET Diode Diode

FET FET Diode Diode

FET FET Diode Diode

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EV Charging Background Information
Introducing the Block Diagram of the Month for the month of May - The Electric Vehicle (EV) or Off-Board Charging Platinum Block Diagram. Our goals for
publishing the “Block Diagram” of the month are to highlight power solution requirements demanded by the industry and to provide, promote, and expose ON-
Semiconductor’s full line of end to end solution and expertise in power semiconductors. Charging Stations, as a major part of the Transportation Infrastructure
Network, have now become a reality. The ability of the Electric Vehicle Service Equipment (EVSE) to effectively charge the traction Batteries in Plug-In Electric
Vehicles (PEV) in a timely fashion is the main driving force for developing High Power, High Performance, Full-Featured Protection EV (Off-Board) Chargers.
Before getting into and dissecting what’s inside an Off-Board EV charger, let us define the different classification and metrics of the various charging level tiers.
Level 1 Charging
• 120 V residential Home based AC electrical outlet. Output current up to 15 A.
• 1 hour of charging through the Electric Vehicle Service Equipment (EVSE) chord set at 120 VAC will add approximately 4 miles of travel.
• Typically, Plug-in EV (PEV) batteries can be fully charged overnight.
• Fully drained PEV traction batteries may take up to approximately 20 hours of charge time with Level 1 charging standards.

Level 2 Charging
• 220 V residential or 208 V commercial AC electrical outlet. Output current up to 40 A
• Level 2 equipment requires professional installation utilizing dedicated wiring circuits
• 1 hour of charging through a level 2 EVSE chord will add approximately 15 miles of travel time with a 3.3 kW on board charger
• 1 hour of charging through a 6.6 kW, level 2 EVSE chord (on-board charger) will add approximately 30 miles of travel time.
• Fully drained PEV traction batteries may take up to approximately 7 hours of charge time with Level 2 EVSE standards

DC Fast Charging (DCFC)

• 480 V Commercial Grade AC power hardware and equipment. DC current up to 125 A
• 20-30 minutes of charging will add approximately 90-100 miles of travel.
• DCFC EVSE directly converts AC power to DC power, bypassing the EV’s On-Board Charger to deliver high DC current into the PEV’s traction batteries.
• DCFC EVSE is connected directly onto the charging inlet of the Vehicle.

For this block diagram, we will focus our attention on the DC Fast Charging (DCFC) Tier. Interest is very high for this solution for the obvious reason that waiting
around for a battery to recharge before continuing down the road is not something consumers want to do. Of course it goes without saying that this comes with
a price. High power, high current and high temperature ratings normally associate themselves with quality components and sometimes exotic components.
This trade off requires rectifier components with blocking voltage ratings in excess of 1200 V. Two lower voltage rated diodes may be mounted in series but with
compromise in efficiency due to the voltage drop being twice as much. Silicon Carbide diodes are also available but are costly due to being “newer” technology –
more on this comparison will be discussed below.

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Because the DCFC current rating is in the 125A range, the secondary rectification block requires magnetic isolation with optimized heat transfer characteristics
and minimized transformer loss. An option of having a multiple secondary winding tap points topology in the secondary rectification stage is also available to
cater to improved heat transfer and high output current requirements. Multiple transformers connected in parallel configuration can mitigate current stresses
on the primary windings with the cost of power density due to this solution taking up a larger footprint.
With high power comes heat. Efficiently and reliably providing air circulation throughout the Main and Secondary stages is of primary importance, particularly
with the main power transformer. A 3-phase BLDC (brush-less DC) motor driving a fan can prevent device and transformer winding over-heating. This will
dramatically reduce system shutdown/restart events because every sub-system module in this off-board DCFC will be equipped with its own thermal protection
via Over Temperature Protection (OTP). The circuitry required for a BLDC motor includes a motor driver controller, bridge circuitry, and direct communication
with the EV charger’s Microcontroller Unit (MCU).
To achieve DC high power delivery from the 3-phase AC source to charge the traction batteries to full charge, the following high power blocks are required:
• Power Factor Correction for each AC phase Line (times 3)
• Full Bridge LLC Resonant Converter
• Secondary Rectification
• Blocking Diodes to prevent reverse current

The remaining wrap around circuitry to aid successful operation are the following:
Primary Winding Side:
• High Voltage Gate Driver
• Voltage Sense Block
• Current Sense Amplifier
• Auxiliary Power Block to power the Gate Drivers, Voltage and Current Sense
• Power Line Communications Modem (PLC): ie. for detecting that the charger is in charging inlet of the vehicle
• Digital Signal Processor (not an ON part): sends PWM pulses to the PFC and Main DC/DC gate drivers.
• LCD Back Lighting Block
• 3-Phase BLDC Motor Controller with Integrated Gate Drivers
• H-Bridge Topology (6 x 40V MOSFET) to drive the BLDC Fan Motor
• Thermal Sensors for the 3-Phase / PFC block and Main DC/DC stage feeding back to the MCU/DSP

Secondary Winding Side:

• ADC (not an ON part)
• Isolation Optocoupler: Used for the feedback network between Secondary to Primary voltage sense transfer back to the MCU/DSP.

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HV MOSFET (Power MOSFET) vs IGBT vs Silicon Carbide Devices
The EV charging application requires high voltage, high current and high performance in an elevated temperature environment. Below is a summary of the
advantages and dis-advantages of the 3 types of devices that can be employed in each of the sub-blocks (PFC, Main DC-DC bridge, Secondary Rectifier, and
Blocking Diodes) that make up the Off-Board EV charging system.
Power MOSFET or SuperJunction MOSFETs are constructed vertically. By stacking P+ tubs on top of each other, the net effect is a dramatic increase in blocking
voltage tolerance, compared to its laterally construction, low voltage MOSFET counterpart. In addition to the higher blocking tolerance during reverse bias
conditions, this simultaneously allows these stacked P+ tubs to be closer together, increasing cell density. Furthermore and most importantly, this allows the N
epi region to be thinner and much more heavily doped leading to lower Repi per unit area contributing to a much lower total overall on-state silicon resistance
while featuring very high voltage blocking rating.
IGBT has a gate terminal insulated by SiO2 (similar control input gate function as a Power MOSFET) and having the advantages of High-Current, due to being a
majority carrier device, and low saturation voltage (Vce) features that of a bipolar device. In other words, they have the precision gate control of a field-effect
transistor and the extreme high-current capacity of a bipolar power transistor as a switch. They do not have the disadvantage of being a minority carrier device
such as the Power MOSFET as far as current density is concerned. The disadvantage occurs when turning off this device. Due to the injection layer being of P-
type that interfaces with the N-type Drift Layer, this large interface area has to go through reverse recovery causing a long device turn-off period that in turn
produces a long tail current.
Silicon Carbide is a wide-bandgap device (3.3 eV compared to 1.1 eV for Si devices such as power MOSFETs and IGBT above). Some advantages of this wider
band gap are a higher electric field breakdown, higher thermal conductivity and higher operating temperature tolerances. The drift region is physically narrower
(thinner) than regular silicon devices by 10x which translates into much lower on resistance producing more efficient power solutions.

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 HV MOSFET
Criteria IGBT Silicon Carbide
(SuperJunction)

High Voltage Blocking Good Good Best

Thermal Conductivity Good Good Best
On - State Conduction Efficiency Good Best Best
Fast Switching Speed Better Good Best
High Current Handling Good Better Best
Well Controlled Switching Times Better Good Best
High Temperature Reliability Good Best Best
High Switching Speed Limitation Yes Yes No
Cost Effectiveness Good Best Worst
Condensed Form Factor Good Good Best
Charging / Discharging of
Input Capacitance (Cgd Recombination during
HIGH COST
or Miller cap) at gate device turn-Off. Long
Manufacturability not
terminal limits switching tail current due to
Drawback perfected
speed and electron injection layer’s excess
Progress still being made
transit times across the hole carriers that
in development.
drift region where E-field require recombination.
develops and collapses.
Will be used in >100kW DC
chargers as efficiency and
Most common power
Used in low cost DC space become the most
switch used in <75kW DC
chargers that are not critical requirements.
chargers due to its high
Usage Trends concerned about Example, keeps a 150kW
efficiency in fast
efficiency and space station the same size as a
switching applications
requirements. 50kW SuperJunction
and moderate costs.
station (already the size of
a traditional gas pump).

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Block Diagram Name: HEV/EV Charging
Suggested Block Option WPN Why Select? WPN Desciption

EV Charging Block Diagram - Main

3-Phase Rectifier/PFC (See below) - - - See detailed breakout below
Main DC-DC (See below) - - - See detailed breakout below
AUX Power 1 NCV5171 Boost Converter, 280 kHz, 1.5 A, for Automotive
AUX Power 2 MC34063A Buck / Boost / Inverting Regulator, Switching, 1.5 A
Wide Bandwidth: 4.5MHz, Wide - Single Supply Operation: 3V to
44V, Wide Input Common Mode Voltage Range with Fast Slew Rate
Voltage Sense 1 MC34071A 13V/us Operational Amplifier, Single Supply 3.0 V to 44 V, Low Input Offset Voltage, Single
Wide Common Mode Input Range: -0.3V to 26V, Low Offset Drift:
Voltage Sense 2 NCS211R 0.5uV/ C: Gain: 500V/V Current Sense Amplifier, 26V, Low-/High-Side Voltage Out, Bidirectional Current Shunt Monitor
Gate Driver - MOSFET 1 FAN3224C CMOS input, dual non-inverting output, peak 5A sink, 5A source current Low-Side Gate Driver
Gate Driver - MOSFET 2 FAN7171_F085 625V, 4A, SOIC-8, High-Side Gate Drive IC
Gate Driver - IGBT 1 NCD5700 Non-isolated IGBT Gate Drivers, High-Current, Stand-Alone
Gate Driver - IGBT 2 NCD57000 Isolated Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation.
Gate Driver - SiC 1 NCP51705 SiC driver SiC MOSFET Driver, Low-Side, Single 6 A High-Speed
Wide Common Mode Input Range: -0.3V to 26V, Low Offset Drift:
Current Sense 1 NCS214R 0.5uV/ C: Gain: 100V/V Current Sense Amplifier, 26V, Low-/High-Side Voltage Out, Bidirectional Current Shunt Monitor
Isolation 1 FOD8160 High Noise Immunity, 3.3 V / 5 V, 10 Mbit/sec, Logic Gate Optocoupler

Power line carrier modem using spread-FSK (S-FSK) modulation for

Communications 1 NCN49597 robust low data rate communication over power lines. Power Line Communication (PLC) Modem

The NCN49599 is a powerful power line communication SoC

combining low power Cortex M0 processor with a high precision
analogue front end. Based on a dual 4800 Baud S-FSK channel
technology, it offers an ideal compromise between speed and
Communications 2 NCN49599 robustness for operations in a harsh environment. Power Line Communication (PLC) Modem
Touch Screen Controller 1 LC717A30UR Capacitance-Digital-Converter for Electrostatic Capacitive Touch Sensors
LCD Backlighting 1 CAT4106 LED Driver, 4-Channel, 6 Watt with Diagnostics
LCD Backlighting 2 FAN5702 I2C Interface LED Driver with I2C Interface
Integrated DC motor controller with gate driver. Compact design
Brushless DC Motor Controller 1 LV8907UW and low profile packaging and footprint. Sensor-less Three-phase, Brushless DC Motor, Controller, with Gate, Drivers, for Automotive
High Current Power Mosfet with 40V Breakdown Rating. Compact
Brushless DC Motor Controller 1 NTTFS015N04C design and low profile packaging and footprint. Power MOSFET; 40 V, 17.3 m, 27 A, Single N−Channel
3-Phase Rectifier/PFC - Topology 1
Diode 1 RHRG75120 Lower cost. 75A, 1200V, Hyperfast Diode
Diode 2 RHRG30120 Lower cost. 30A, 1200V, Hyperfast Diode
Diode - SiC 3 FFSH40120ADN Higher efficiency. SiC Diode, 1200V, 40A, TO-247-3, Common Cathode
Switch - MOSFET 1 FCH023N65S3 Lower RDS(on) for higher efficiency. FET Option: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 23 mΩ, TO-247
Switch - MOSFET 2 NTH027N65S3F Lower RDS(on) for higher efficiency. FET Option: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247
Switch - MOSFET 3 FCH040N65S3 Lower cost. FET Option: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 65 A, 40 mΩ, TO-247
Switch - MOSFET 4 NTHL040N65S3F Lower cost. FET Option: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247
Switch - IGBT 1 NGTB40N120FL3 Robust and cost effective. IGBT Option: IGBT, Ultra Field Stop -1200V 40A
Switch - IGBT 2 NGTB40N120L3 Higher efficiency. IGBT Option: IGBT, Ultra Field stop - 1200V 40A, Low VCEsat
Switch - SiC 1 NTHL080N120SC1 SiC Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247−3L
Gate Driver - MOSFET 1 FAN3224C CMOS input, dual non-inverting output, peak 5A sink, 5A source current Low-Side Gate Driver
Gate Driver - MOSFET 2 FAN7171_F085 625V, 4A, SOIC-8, High-Side Gate Drive IC
Gate Driver - IGBT 1 NCD5700 Non-isolated IGBT Gate Drivers, High-Current, Stand-Alone
Gate Driver - IGBT 2 NCD57000 Isolated Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation
Gate Driver - SiC 1 NCP51705 SiC driver SiC MOSFET Driver, Low-Side, Single 6 A High-Speed

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 Suggested Block Option WPN Why Select? WPN Desciption

3-Phase Rectifier/PFC - Topology 2

D1 to D6 (Diode Rectifier) 1 ISL9R3060G2 Higher efficiency. 30A, 600V, STEALTH™ Diode
D1 to D6 (Diode Rectifier) 2 RHRG3060 Lower ringing and transient spikes. 30A, 600V, Hyperfast Diode
D7 to D18 (Diode Rectifier) 1 RHRG3060 30A, 600V, Hyperfast Diode
Switch - MOSFET 1 FCH023N65S3 Lower RDS(on) for higher efficiency. FET Option: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 23 mΩ, TO-247
Switch - MOSFET 2 NTH027N65S3F Lower RDS(on) for higher efficiency. FET Option: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247
Switch - MOSFET 3 FCH040N65S3 Lower cost. FET Option: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 65 A, 40 mΩ, TO-247
Switch - MOSFET 4 NTHL040N65S3F Lower cost. FET Option: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247
Switch - IGBT 1 NGTB40N120FL3 Robust and cost effective. IGBT Option: IGBT, Ultra Field Stop -1200V 40A
Switch - IGBT 2 NGTB40N120L3 Higher efficiency. IGBT Option: IGBT, Ultra Field stop - 1200V 40A, Low VCEsat
Switch - SiC 1 NTHL080N120SC1 SiC Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247−3L
Gate Driver - MOSFET 1 FAN3224C CMOS input, dual non-inverting output, peak 5A sink, 5A source current Low-Side Gate Driver
Gate Driver - MOSFET 2 FAN7171_F085 625V, 4A, SOIC-8, High-Side Gate Drive IC
Gate Driver - IGBT 1 NCD5700 Non-isolated IGBT Gate Drivers, High-Current, Stand-Alone
Gate Driver - IGBT 2 NCD57000 Isolated Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation.
Gate Driver - SiC 1 NCP51705 SiC driver SiC MOSFET Driver, Low-Side, Single 6 A High-Speed
Main DC-DC / Secondary Rectification
FET 1 NTH027N65S3F Higher efficiency. Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247
FET 2 NTHL040N65S3F Higher efficiency. Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247
FET 3 NTHL065N65S3F Lower cost. Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 46 A, 65 mΩ, TO-247
FET 4 NTHL082N65S3F Lower cost. Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247
Diode 1 RHRG75120 Lower cost. 75A, 1200V, Hyperfast Diode
Diode 2 RHRG30120 Lower cost. 30A, 1200V, Hyperfast Diode
Diode - SiC 1 FFSH30120A Higher efficiency. SiC Diode, 1200V, 30A, TO-247-2
Diode - SiC 2 FFSH40120A Higher efficiency. SiC Schottky Diode, 1200 V, 40 A
Diode - SiC 3 FFSH50120A Higher efficiency. SiC Diode, 1200V, 50A, TO-247-2
Gate Driver - MOSFET 1 FAN3224C CMOS input, dual non-inverting output, peak 5A sink, 5A source current Low-Side Gate Driver
Gate Driver - MOSFET 2 FAN7171_F085 625V, 4A, SOIC-8, High-Side Gate Drive IC
Gate Driver - IGBT 1 NCD5700 Non-isolated IGBT Gate Drivers, High-Current, Stand-Alone

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