IRF6644PbF

IR MOSFET DirectFET™ Power MOSFET

Typical values (unless otherwise specified)

Quality Requirement Category: Consumer VDSS VGS RDS(on) (typ.)

100V min. ± 20V max 10.3m@ 10V
Applications
Qg tot Qgd Vgs(th)
 RoHS Compliant 
28nC 9.0nC 3.7V
 Lead-Free (Qualified up to 260°C Reflow)
 Application Specifies MOSFETs
 Ideal for High Performance Isolated Converter
S
Primary Switch Socket D G D
S
 Optimized for Synchronous Rectification
 Low Conduction Losses DirectFET™ ISOMETRIC
MN
 Low Profile (< 0.7mm)
 Dual Sided Cooling Compatible 
 Compatible with existing Surface Mount Techniques 

Applicable DirectFET® Outline and Substrate Outline (see pg. 13, 14 for details) 
SH SJ SP MZ MN

Description
The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the
lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows
dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%.

The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V-75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliabil-
ity improvements, and makes the device ideal for high performance isolated DC-DC converters.

60 80
RDS (on), Drain-to -Source On Resistance (m)
RDS(on) , Drain-to -Source On Resistance (m)

55 ID = 34A
70 VGS = 7.0V
50 VGS = 8.0V
45 60 VGS = 10V
VGS = 12V
40
50
35
30 40
25 TJ = 125°C
30
20
15 TJ = 25°C 20
10
10
5
0 0
2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160
VGS, Gate -to -Source Voltage (V) ID , Drain Current (A)

Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current
Final Datasheet Please read the important Notice and Warnings at the end of this document V2.0
www.infineon.com 2017-03-28
IR MOSFET
IRF6644PbF
Table of Contents

Table of Contents
Applications …..………………………………………………………………………...……………..……………1
Description ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1 Parameters ………………………………………………………………………………………………3
2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
3 Electrical characteristics ………………………………………………………………………………5
4 Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………13
Qualification Information ……………………………………………………………………………………………16
Revision History …………………………………………………………………………………………..…………17

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IR MOSFET
IRF6644PbF
Parameters

1 Parameters

Table1 Key performance parameters

Parameter Values Units
VDS 100 V
RDS(on) max  13 m
ID @ TC @ 25°C 57 A
ID @ TA @ 25°C 10 A

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IR MOSFET
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Maximum ratings and thermal characteristics

2 Maximum ratings and thermal characteristics

Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified)

Parameter Symbol Conditions Values Unit
Continuous Drain Current (Silicon Limited) ID TC = 25°C, VGS @ 10V 57
Continuous Drain Current (Silicon Limited) ID TC = 70°C, VGS @ 10V 46
A
Continuous Drain Current (Silicon Limited) ID TA= 25°C, VGS @ 10V 10
Pulsed Drain Current  IDM TC = 25°C 228
Maximum Power Dissipation  PD TC = 25°C 89
Maximum Power Dissipation  PD TC = 70°C 57 W
Maximum Power Dissipation  PD TA = 25°C 2.8
Gate-to-Source Voltage VGS - ± 20 V
Peak Soldering Temperature TP - 270
°C
Operating and Storage Temperature TJ, TSTG - -40 ... 150

Table 3 Thermal characteristics

Parameter Symbol Conditions Min. Typ. Max. Unit
Junction-to-Ambient  RJA - - - 45
Junction-to-Ambient  RJA - - 12.5 -
Junction-to-Ambient  RJA - - 20 - °C/W
Junction-to-Case  RJC - - - 1.4
Junction-to-PCB Mounted RJA-PCB - - 1.0 -

Table 4 Avalanche characteristics

Parameter Symbol Values Unit
Single Pulse Avalanche Energy  EAS 86 mJ
Avalanche Current  IAR 34 A

Notes:
Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET™ Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
(Starting TJ = 25°C, L = 0.15mH, RG = 50, IAS = 34A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heat sink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.

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IR MOSFET
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Electrical characteristics

3 Electrical characteristics
Table 5 Static characteristics
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 - - V
Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1mA - 0.1 - V/°C
Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 34A  - 10.3 13 m
Gate Threshold Voltage VGS(th) 2.8 3.7 4.8 V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Temp. Coefficient VGS(th)/TJ - -11 - mV°/C
VDS = 100V, VGS = 0V - - 20
Drain-to-Source Leakage Current IDSS µA
VDS = 80V, VGS = 0V, TJ = 125°C 250
IGSS VGS = 20V - - 100
Gate-to-Source Forward Leakage nA 
IGSS VGS = -20V - - -100
Gate Resistance RG - - 1.6 - 

Table 6 Dynamic characteristics

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Forward Trans conductance gfs VDS = 10V, ID = 34A 65 - - S
Total Gate Charge Qg - 28 42
Pre-Vth Gate-to-Source Charge Qgs1 ID = 34A - 7.0 -
Post-Vth Gate-to-Source Charge Qgs2 VDS = 50V - 3.0 -
nC
Gate-to-Drain Charge Qgd VGS = 10V - 9.0 -
See Fig.8
Gate Charge Overdrive Qgodr - 9.0 -
Switch Charge (Qgs2 + Qgd) Qsw - 16 -
Output Charge Qoss VDS = 16V ,VGS = 0V - 18 - nC
Turn-On Delay Time td(on) VDD = 50V - 9.5 -
Rise Time tr ID = 34A - 16 -
ns
Turn-Off Delay Time td(off) RG = 1.8 - 15 -
Fall Time tf VGS = 10V  - 5.7 -
Input Capacitance Ciss VGS = 0V - 1770 -
Output Capacitance Coss VDS = 50V - 280 -
Reverse Transfer Capacitance Crss ƒ = 1.0MHz - 60 - pF
Output Capacitance Coss VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz - 2025 -
Output Capacitance Coss VGS = 0V, VDS = 80V, ƒ = 1.0MHz - 245 -

Table 7 Reverse Diode

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Continuous Source Current MOSFET symbol D

IS - - 57
(Body Diode) showing the
G A
Pulsed Source Current integral reverse
ISM - - 228
(Body Diode)  p-n junction diode.
S

Diode Forward Voltage VSD TJ = 25°C, IS = 34A,VGS = 0V  - - 1.3 V

Reverse Recovery Time trr TJ = 25°C, IF = 34A, VDD = 50V - 53 80 ns
Reverse Recovery Charge Qrr di/dt = 100A/µs - 97 146 nC

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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams

4 Electrical characteristic diagrams

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

100 7.0V 7.0V

6.0V 6.0V
BOTTOM 5.0V 100 BOTTOM 5.0V

10

5.0V
5.0V 10
1

 60µs PULSE WIDTH  60µs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics

1000 2.4
ID = 34A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
2.0
ID , Drain-to-Source Current (A)

100
1.6
(Normalized)

TJ = 150°C
TJ = 25°C
1.2
10

0.8
VDS = 50V
 60µs PULSE WIDTH
1 0.4
2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature

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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams

100000 14
VGS = 0V, f = 1 MHZ
ID = 34A
Ciss = Cgs + Cgd, Cds SHORTED
12 VDS = 80V
Crss = Cgd

VGS , Gate-to-Source Voltage (V)

Coss = Cds + Cgd VDS = 50V
10000
10 VDS= 20V
C, Capacitance (pF)

Ciss 8
1000 Coss
6

4
100 Crss

10 0
0.1 1 10 100 0 5 10 15 20 25 30 35 40
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Figure 7 Typical Capacitance vs. Drain-to-Source Figure 8 Typical Gate Charge vs. Gate-to-Source
Voltage Voltage

1000

100
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)

100 100µsec

1msec
T J = 150°C T J = 25°C
10
10 OPERATION IN THIS AREA
LIMITED BY R DS(on)

1 1
10msec
Tc = 25°C
VGS = 0V Tj = 150°C DC
Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)

Figure 9 Typical Source-Drain Diode Forward Figure 10 Maximum Safe Operating Area
Voltage

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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams

60 5.0

50 4.5

VGS(th) , Gate threshold Voltage (V)

4.0
ID , Drain Current (A)

40
3.5
30
3.0
20 ID = 150µA
2.5
ID = 250µA
10 ID = 1.0mA
2.0
ID = 1.0A
0 1.5
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
TC , Case Temperature (°C) T J , Temperature ( °C )

Figure 11 Maximum Drain Current vs. Case Figure 12 Typical Threshold Voltage vs. Junction
Temperature Temperature

400
ID
E AS , Single Pulse Avalanche Energy (mJ)

350
TOP 4.2A
8.9A
300 BOTTOM 34A

250

200

150

100

50

0
25 50 75 100 125 150
Starting T J , Junction Temperature (°C)

Figure 13 Maximum Avalanche Energy vs. Drain Current

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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams

100
Single Pulse Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming DTj = 125°C and
Tstart =25°C (Single Pulse)
0.01
Avalanche Current (A)

10

0.05
0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming DTj = 25°C and
Tstart = 125°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Figure 14 Typical Avalanche Current vs. Pulse Width

10
Thermal Response ( Z thJC ) °C/W

1 D = 0.50

0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t 1 , Rectangular Pulse Duration (sec)

Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IR MOSFET
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Electrical characteristic diagrams

 Surface mounted on 1 in. square  Mounted to PCB with  Mounted on minimum

Cu board (still air). Small clip heatsink (still air). footprint full size board with
metalized back and with small
clip heatsink (still air).

Figure 16 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs

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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams

Figure 17a Gate Charge Test Circuit Figure 17b Gate Charge Waveform

Figure 18a Unclamped Inductive Test Circuit Figure 18b Unclamped Inductive Waveforms

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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams

Figure 19a Switching Time Test Circuit Figure 19b Switching Time Waveforms

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IR MOSFET
IRF6644PbF
Package Information

5 Package Information
DirectFET™ Board Footprint, MN Outline
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.

Note: For the most current drawing please refer to website at : www.irf.com/package/

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IR MOSFET
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Package Information

DirectFET™ Outline Dimension, MN Outline

(Medium Size Can, N-Designation).

Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.

DirectFETTM Part Marking

Note: For the most current drawing please refer to website at : www.irf.com/package/

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IR MOSFET
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Tape & Reel Information

DirectFETTM Tape & Reel Dimension (Showing component orientation).

Note: For the most current drawing please refer to website at : www.irf.com/package/

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IR MOSFET
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Qualification Information

6 Qualification Information

Qualification Information

Qualification Level Consumer

(per JEDEC JESD47F) †
MSL1
Moisture Sensitivity Level DirectFET™ Medium Can
(per JEDEC J-STD-020D)†
RoHS Compliant Yes

† Applicable version of JEDEC standard at the time of product release.

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IR MOSFET
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Revision History

Revision History
Major changes since the last revision

Page or Reference Revision Date Description of changes

All pages 1.0 2006-08-18  First release data sheet.

All page 2.0 2017-03-28  This is Unique datasheet Project with Id Ratings based on RthJC.
 The datasheet is converted in New Infineon Template.

Final Datasheet 17 V2.0

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HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
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SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™

Trademarks updated November 2015

Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE
For further information on the product, technology,
Edition 2015-05-06 The information given in this document shall in no delivery terms and conditions and prices please
Published by event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office
Infineon Technologies AG characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com).
81726 Munich, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information WARNINGS
© 2016 Infineon Technologies AG. regarding the application of the product, Infineon
All Rights Reserved. Technologies hereby disclaims any and all Due to technical requirements products may contain
warranties and liabilities of any kind, including dangerous substances. For information on the types
Do you have a question about this without limitation warranties of non-infringement of in question please contact your nearest Infineon
document? intellectual property rights of any third party. Technologies office.
Email: erratum@infineon.com
In addition, any information given in this document Except as otherwise explicitly approved by Infineon
is subject to customer’s compliance with its Technologies in a written document signed by
Document reference authorized representatives of Infineon Technologies,
obligations stated in this document and any
applicable legal requirements, norms and standards Infineon Technologies’ products may not be used in
concerning customer’s products and any use of the any applications where a failure of the product or
product of Infineon Technologies in customer’s any consequences of the use thereof can reasonably
applications. be expected to result in personal injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) . contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon WARNINGS
Technologies hereby disclaims any and all Due to technical requirements products may
warranties and liabilities of any kind, including contain dangerous substances. For information on
without limitation warranties of non-infringement the types in question please contact your nearest
of intellectual property rights of any third party. Infineon Technologies office.
In addition, any information given in this document Except as otherwise explicitly approved by Infineon
is subject to customer’s compliance with its Technologies in a written document signed by
obligations stated in this document and any authorized representatives of Infineon
applicable legal requirements, norms and Technologies, Infineon Technologies’ products may
standards concerning customer’s products and any not be used in any applications where a failure of
use of the product of Infineon Technologies in the product or any consequences of the use thereof
customer’s applications. can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.