PE616BA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 7mΩ @VGS = 10V 36A

PDFN 3X3P

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TC = 25 °C 36
Continuous Drain Current ID
TC = 100 °C 23
1 IDM
Pulsed Drain Current 100
A
TA = 25 °C 12
Continuous Drain Current ID
TA = 70 °C 9.2
Avalanche Current IAS 23
Avalanche Energy L =0.1mH EAS 26.4 mJ
TC = 25 °C 16.7
TC = 100 °C 6.7
Power Dissipation PD W
TA = 25 °C 1.7
TA = 70 °C 1
Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient RqJA 75
°C / W
Junction-to-Case RqJC 7
1
Pulse width limited by maximum junction temperature.
2
The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.

REV 1.0 1 2014/11/11

PE616BA
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.35 1.8 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V, TJ = 55 °C 10
Drain-Source On-State VGS = 4.5V, ID = 12A 7 9.5
RDS(ON) mΩ
Resistance1 VGS = 10V , ID = 12A 5.4 7
Forward Transconductance1 gfs VDS = 5V, ID = 12A 55 S
DYNAMIC
Input Capacitance Ciss 835
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 158 pF
Reverse Transfer Capacitance Crss 96
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.4 Ω
Qg(VGS=10V) 17.7
Total Gate Charge2
Qg(VGS=4.5V) VDS = 15V, ID = 12A 9.5
nC
2 Qgs
Gate-Source Charge 2.3
Gate-Drain Charge2 Qgd 5.1
2 td(on)
Turn-On Delay Time 27
Rise Time 2 tr VDS= 15V, ID @ 12A, 23
nS
Turn-Off Delay Time 2 td(off) VGS = 10V, RGEN= 6Ω 51
Fall Time2 tf 24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 14 A
1 VSD IF = 12A, VGS = 0V
Forward Voltage 1.2 V
Reverse Recovery Time trr 13.3 nS
IF = 12A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 5.2 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 2 2014/11/11

PE616BA
N-Channel Enhancement Mode MOSFET

REV 1.0 3 2014/11/11

PE616BA
N-Channel Enhancement Mode MOSFET

REV 1.0 4 2014/11/11

PE616BA
N-Channel Enhancement Mode MOSFET

REV 1.0 5 2014/11/11