AT-41500

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip

Data Sheet

Description/Applications Features
The AT-41500 of Avago Techologies is a general purpose Performance in 86 plastic package:
NPN bipolar transistor chip that offers excellent high • Low Noise Figure
frequency performance. The 4 micron emitter-to-emitter 1.4 dB typical at 1 GHz
pitch enables this transistor to be used in many different 1.7 dB typical at 2 GHz
functions. The 15 emitter fingers interdigitated geometry
• High Associated Gain
yields an intermediate sized transistor with impedances
17.0 dB typical at 1GHz
that are easy to match for low noise and moderate power
12.5 dB typical at 2 GHz
applications. This device is designed for use in low noise,
wideband amplifier, mixer and oscillator applications in • High Gain-Bandwidth Product
the VHF, UHF, and microwave frequencies. An optimum 8.0 GHz typical fT
noise match near 50 Ω at 1GHz, makes this device easy
to use as a low noise amplifier. Chip Outline
The AT-41500 bipolar transistor is fabricated using Avago
Technologies’ 10 GHz fT Self-Aligned-Transistor (SAT)
2002
process. The die is nitride passivated for surface pro-
tection. Excellent device uniformity, performance and
reliability are produced by the use of ion implantation,
self-alignment techniques, and gold metallization in the
fabrication of this device.

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Table 1. Absolute Maximum Ratings [1]

Symbol Parameter Unit Max Rating

VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
IC Collector Current mA 60
PT Power Dissipation[2, 3] mW 500
TJ Junction Temperature °C 200
TSTG Storage Temperature °C -60 to 200
qjc Thermal Resistance [2, 4] °C/W 95

Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T—MOUNTING SURFACE = 25 °C
3. Derate at 10.5 mW/°C for T—MOUNTING SURFACE > 153 °C.
4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do the alternate method.

Table 2. Electrical Specifications at TA = +25°C, VCE=8V

Symbol Parameter and Test Condition Units Min. Typ. Max.

NFo Optimum Noise Figure: Ic = 10 mA f = 1.0 GHz dB 1.40
f = 2.0 GHz dB 1.70
f = 4.0 GHz dB 3.00
GA Gain @ NFo ; Ic=10mA f = 1.0 GHz dB 17.0
f = 2.0 GHz dB 12.5
f = 4.0 GHz dB 8.0
|S21E|2 Insertion Power Gain : Ic = 25 mA f = 1.0 GHz dB 17.0
f = 2.0 GHz dB 11.0
P1dB Power Output @1dB Gain Compression:Ic=25 mA f = 2.0 GHz dBm 18.0
G1dB 1 dB Compressed Gain: Ic = 25 mA f = 2.0 GHz dB 13.0
fT Gain Bandwidth Product: Ic = 25 mA GHz 8.0
hFE Forward Current Transfer Ratio: Ic = 10 mA 30 150 270
ICBO Collector Cutoff Current: VCB = 8 V uA 0.2
IEBO Emitter Cutoff Current: VEB = 1 V uA 1

Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. RF performance is measured in 86 plastic packages.


Typical Performance Curves at Tc = +25°C
16 20
20
18 1.0 GHz
P1dB
14 16
GA 14 15
12 G1dB

|S 21E | 2 (dB)
12
G A (dB)

GAIN (dB)
2.0 GHz
10 10 10
8
4 6 4.0 GHz
5

NFO (dB)
NFO 4
2
2
0 0 0
0 10 20 30 10 20 30 40 0 5 10 25 30 40
I C (mA) COLLECTOR CURRENT I C (mA)

Figure 2. AT-41586 Optimum Noise Figure and Figure 3. AT-41586 P1dB and G1dB vs. Collector Figure 4. AT-41586 Insertion Power Gain vs. Col-
Associated Gain vs. Collector Current at VCE = 8 Current at VCE = 8 V, f = 2.0 GHz. lector Current and Frequency at 25°C, VCE = 8 V.
V, f = 2.0 GHz.

Typical Scattering Parameters at Tc = +25°C

VCE=8V, Ic = 10mA, Zo=50 Ohm
Freq. S11 S21 S12 S22
GHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
0.1 0.71 -31.07 25.05 162.68 0.01 76.37 0.93 -9.41
0.3 0.67 -80.52 19.56 135.82 0.02 57.2 0.78 -21.46
0.5 0.64 -111.27 14.66 119.68 0.03 48.47 0.66 -25.21
0.7 0.62 -130.51 11.39 109.6 0.03 45.46 0.58 -25.54
0.9 0.61 -143.51 9.21 102.62 0.03 45.15 0.54 -24.99
1.1 0.61 -153.01 7.7 97.33 0.04 46.1 0.51 -24.42
1.3 0.61 -160.38 6.59 93.05 0.04 47.6 0.49 -24.07
1.5 0.61 -166.4 5.76 89.4 0.04 49.3 0.48 -23.97
1.7 0.61 -171.49 5.11 86.19 0.04 51.03 0.48 -24.11
1.9 0.61 -175.93 4.59 83.27 0.05 52.69 0.47 -24.44
2.1 0.61 -179.89 4.17 80.58 0.05 54.22 0.47 -24.94
2.3 0.61 176.52 3.81 78.06 0.05 55.63 0.46 -25.56
2.5 0.61 173.2 3.51 75.68 0.06 56.9 0.46 -26.29
2.7 0.61 170.11 3.26 73.4 0.06 58.03 0.46 -27.11
2.9 0.62 167.21 3.04 71.21 0.06 59.03 0.46 -28.01
3.1 0.62 164.46 2.84 69.09 0.07 59.92 0.46 -28.96
3.3 0.62 161.83 2.67 67.03 0.07 60.7 0.46 -29.97
3.5 0.62 159.32 2.52 65.04 0.07 61.38 0.46 -31.01
3.7 0.63 156.9 2.39 63.09 0.08 61.98 0.46 -32.1
3.9 0.63 154.56 2.27 61.18 0.08 62.49 0.46 -33.22
4.1 0.63 152.3 2.16 59.32 0.08 62.93 0.46 -34.37
4.3 0.63 150.11 2.06 57.5 0.09 63.3 0.46 -35.54
4.5 0.64 147.98 1.96 55.71 0.09 63.61 0.46 -36.74
4.7 0.64 145.91 1.88 53.95 0.09 63.86 0.46 -37.95
4.9 0.64 143.89 1.8 52.23 0.1 64.06 0.46 -39.19
5.1 0.65 141.92 1.73 50.54 0.1 64.22 0.46 -40.43
5.3 0.65 139.99 1.67 48.88 0.1 64.33 0.46 -41.69
5.5 0.66 138.11 1.61 47.24 0.11 64.41 0.46 -42.97
5.7 0.66 136.27 1.55 45.64 0.11 64.44 0.46 -44.25
5.9 0.66 134.47 1.49 44.06 0.12 64.45 0.46 -45.55
6 0.66 133.58 1.47 43.29 0.12 64.44 0.46 -46.2


Typical Noise Parameters at Tc = +25°C
VCE=8V, Ic = 10mA, Zo=50 Ohm
Spot
Freq GHz Nfo dB Mag Ang Rn/50
0.1 1.20 0.12 3 0.17
0.5 1.20 0.10 16 0.17
1.0 1.30 0.06 27 0.16
2.0 1.59 0.24 163 0.16

Typical Scattering Parameters at Tc = +25°C

VCE=8V, Ic = 25mA, Zo=50 Ohm
Freq. S11 S21 S12 S22
GHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
0.1 0.45 -56.86 37.18 155.62 0.01 71.88 0.86 -13.32
0.3 0.54 -117.7 24.66 124.86 0.02 55.41 0.65 -24.66
0.5 0.57 -142.6 16.94 110.36 0.02 53.11 0.53 -24.96
0.7 0.59 -155.82 12.65 102.12 0.02 55.08 0.48 -23.39
0.9 0.59 -164.33 10.04 96.54 0.02 57.9 0.46 -22.09
1.1 0.6 -170.54 8.3 92.29 0.03 60.58 0.44 -21.34
1.3 0.6 -175.45 7.06 88.79 0.03 62.86 0.43 -21.05
1.5 0.6 -179.56 6.14 85.76 0.04 64.73 0.43 -21.12
1.7 0.6 176.85 5.44 83.04 0.04 66.24 0.42 -21.46
1.9 0.61 173.62 4.87 80.54 0.04 67.44 0.42 -21.99
2.1 0.61 170.67 4.42 78.19 0.05 68.39 0.42 -22.68
2.3 0.61 167.91 4.04 75.97 0.05 69.13 0.42 -23.49
2.5 0.61 165.31 3.72 73.84 0.05 69.71 0.42 -24.39
2.7 0.62 162.84 3.44 71.78 0.06 70.14 0.42 -25.37
2.9 0.62 160.47 3.21 69.79 0.06 70.47 0.42 -26.4
3.1 0.62 158.19 3 67.85 0.07 70.69 0.42 -27.49
3.3 0.62 155.98 2.82 65.96 0.07 70.84 0.41 -28.61
3.5 0.63 153.84 2.66 64.11 0.07 70.91 0.41 -29.77
3.7 0.63 151.75 2.52 62.3 0.08 70.93 0.41 -30.96
3.9 0.63 149.72 2.39 60.52 0.08 70.89 0.42 -32.17
4.1 0.63 147.74 2.27 58.77 0.09 70.81 0.42 -33.41
4.3 0.64 145.79 2.17 57.05 0.09 70.7 0.42 -34.66
4.5 0.64 143.89 2.07 55.37 0.09 70.54 0.42 -35.93
4.7 0.64 142.03 1.98 53.7 0.1 70.36 0.42 -37.21
4.9 0.65 140.21 1.9 52.07 0.1 70.15 0.42 -38.51
5.1 0.65 138.42 1.83 50.46 0.11 69.92 0.42 -39.82
5.3 0.65 136.66 1.76 48.87 0.11 69.66 0.42 -41.13
5.5 0.66 134.93 1.69 47.31 0.11 69.39 0.42 -42.46
5.7 0.66 133.24 1.63 45.77 0.12 69.1 0.42 -43.79
5.9 0.66 131.57 1.58 44.26 0.12 68.79 0.42 -45.13
6 0.67 130.75 1.55 43.51 0.12 68.63 0.42 -45.8


Part Number Ordering Information

Part number Devices Per Tray

AT-41500-GP4 100

AT-41500 Chip Dimensions

.250 mm (10 mils)

Base Pad 2002

.100 mm (4 mils) .250 mm (10 mils)

C
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Emitter Pad

S415
.045mm (1.8 mils)

Note : Die Thickness is 5 ~ 6 mils

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0438EN
AV02-1844EN - March 26, 2009