1) Assume the JFET shown in Fig.

1 is Si and has 𝑝+ regions doped with 1018

acceptors/𝑐𝑚3 and a channel with 1016 donors/𝑐𝑚3 . If the channel halfwidth a is 1 μm,
compare 𝑉𝑃 with 𝑉𝑂 . What voltage 𝑉𝐺𝐷 is required to cause pinch-off when 𝑉𝑂 is
included? With 𝑉𝐺 = -3 V, at what value of 𝑉𝐷 does the current saturate

Figure 1:Simplified diagram of the channel with definitions of dimensions and differential volume for
calculations.

2) Find the maximum depletion width, minimum capacitance 𝐶𝑖 , and threshold voltage
for an ideal MOS capacitor with a 10-nm gate oxide (Si𝑂2) on p-type Si with 𝑁𝑎 = 1016
/𝑐𝑚3 . Next, include the effects of flat band voltage, assuming an 𝑛+ polysilicon gate
and fixed oxide charge of 5 X 1010 q (C/𝑐𝑚2 ).
3) An Al-gate p-channel MOS transistor is made on an n-type Si substrate with 𝑁𝑑 = 5 x
1017 /𝑐𝑚3 . The Si𝑂2 thickness is 100 Å in the gate region, and the effective interface
charge 𝑄𝑖 is 5 X 1010 q C/𝑐𝑚2 . Find 𝑊𝑚 ,𝑉𝐹𝐵 , and 𝑉𝑇 . Sketch the C– V curve for
this device and give important numbers for the scale.
4) Calculate the 𝑉𝑇 of a Si-P-channel MOS transistor for an 𝑛+ -polysilicon gate with
silicon oxide thickness = 50 Å, Nd = 1 x1018 /𝑐𝑚3 and a fixed charge of 2 X1010 q
C/𝑐𝑚2 . Is it an enhancement- or depletion-mode device? What B dose is required to
change the 𝑉𝑇 to 0 V?
5) Find the voltage 𝑉𝐹𝐵 required to reduce to zero the negative charge induced at the
semiconductor surface by a sheet of positive charge 𝑄𝑂𝑋 located x' below the metal.
In the case of an arbitrary distribution of charge ρ(x') in the oxide, show that
1 𝑑 x′
𝑉𝐹𝐵 = − ∫ ρ(x') dx'
𝐶𝑖 0 𝑑
6) Calculate the 𝑉𝑇 of an MOS capacitor where we deposit a high-k gate dielectric, Hf𝑂2,
whose relative dielectric constant is 25, on a novel p-type semiconductor whose
electron affinity is 4 eV, band gap is 1.5 eV, relative dielectric constant is 10, and
intrinsic carrier concentration is 1012 /𝑐𝑚3 . The gate is made of a metal whose work
function is 5 eV, gate oxide thickness is 100 Å, and 𝑁𝑎 is 1018 /𝑐𝑚3 and that has a fixed
oxide charge of 5 X 1010 q C/𝑐𝑚2 . At 𝑉𝑇 , what are the electron and hole concentrations
at the oxide-semiconductor interface and deep in the substrate? Sketch a labeled band
 diagram normal to the surface at 𝑉𝑇 and mark off the relevant values on the basis of
the numbers given.
7) For parts (a) through (c) below, consider the following low-frequency gate capacitance
(per unit area) vs. gate voltage characteristic for a metal gate n-channel MOSFET.
(a) On the below figure label the approximate regions or points of
• weak inversion (1) • accumulation (4)
• flat band (2) • threshold (5)
• strong inversion (3) • depletion (6)
(b) What is the oxide capacitance per unit area? μF/𝑐𝑚2
(c) On the curve below, sketch the high-frequency curves for this MOSFET with
grounded source/drain.

Figure 2

8) Label—in the "answer" space provided above the figure—the following MOS capacitor
band diagrams as corresponding to accumulation, weak inversion, depletion, strong
inversion, flat band or threshold. Use each possibility only once.

Figure 3
9) Assuming no interface charge due to defects and/or traps, would decreasing the oxide
thickness/increasing the oxide capacitance of an n-channel MOSFET increase,
decrease, or leave essentially unchanged the following parameters (circle the correct
answers):
(a) the flat band voltage, 𝑉𝐹𝐵 ? increase / decrease / unchanged
(b) the threshold voltage, 𝑉𝑇 ? increase / decrease / unchanged
(c) the subthreshold slope? increase / decrease / unchanged
10) Assume that a p-n-p transistor is doped such that the emitter doping is 10 times that in
the base, the minority carrier mobility in the emitter is one-half that in the base, and the
base width is one-tenth the minority carrier diffusion length. The carrier lifetimes are
equal. Calculate α and β for this transistor.
11) (a) In a BJT, we increase the base doping by a factor of 10 and halve the base width.
Calculate approximately by what factor the collector current changes in the normal
active mode, assuming that everything else stays the same,
(b) In a certain BJT, the emitter doping is 100 times greater than the base doping, the
emitter width is 0.1 times the base width, and we can assume both base and emitter
widths to be much shorter than the carrier diffusion lengths 𝐿𝑛 and 𝐿𝑝 . What is the
emitter injection efficiency? What is the base transport factor?
(c) Suppose 𝐿𝑛 = 𝐿𝑝 . Now assuming that both emitter and base are much wider than the
diffusion lengths, what is the emitter injection efficiency and base transport factor?
12) The symmetrical 𝑝+ -n-𝑝+ transistor of Fig.4 is connected as a diode in the four
configurations shown. Assume that V > kT/q. Sketch δp(𝑥𝑛 ) in the base region for each
case. Which connection seems most appropriate for use as a diode? Why?

Figure 4

13) For a p-n-p BJT with 𝑁𝐸 > 𝑁𝐵 > 𝑁𝐶 , show the dominant current components, with proper
arrows, for directions in the normal active mode. If 𝐼𝐸𝑝 = 10 mA, 𝐼𝐸𝑛 = 100 μA, 𝐼𝐶𝑝 =
9.8 mA, and 𝐼𝐶𝑛 = 1 μA, calculate the base transport factor, emitter injection efficiency,
common-base current gain, common-emitter current gain, and 𝐼𝐶𝐵𝑂 If the minority
stored base charge is 4.9 x10−11 C, calculate the base transit time and lifetime.
14) A p-n-p BJT has emitter (𝑁𝐸 ), base (𝑁𝐵 ), and collector (𝑁𝐶 ) doping of 1020 /𝑐𝑚3 ,
1018 /𝑐𝑚3 , and 1017 /𝑐𝑚3 , respectively, and a base width of 0.5 micron. Calculate the
peak electric field at the CB junction, and the CB depletion capacitance per unit area
for the normal active mode of operation with a 𝑉𝐶𝐵 = 50 V. How much is the neutral
base width narrowing at this voltage, ignoring the EB depletion region? What impact
does this have on the output characteristics of the BJT, and what is this effect called?
15) (a) How is it possible that the average time an injected hole spends in transit across the
base 𝛕𝑡 , is shorter than the hole lifetime in the base 𝛕𝑝 ?
(b) Explain why the turn-on transient of a BJT is faster when the device is driven into
oversaturation
16) Consider the following bipolar junction transistor (BJT) circuit and somewhat idealized
transistor characteristics where, in particular, the voltage drop across the forward-biased
base-emitter junction is assumed to be constant and equal to 1 V, for simplicity.
(a) What is the (common-emitter) gain β?
(b) Draw the load line on the transistor characteristics.
(c) What is the collector-emitter voltage drop in this circuit within half a volt?
(d) If voltage 𝐕1 could be changed, what value of 𝐕1 would drive the BJT in this circuit
to the edge of saturation?
(e) For the given base current of 0.1 mA, consistent with your answer to part (b), what
is the collector-emitter voltage drop, VCE, in this circuit within half a volt?
(f) What minimum value of 𝐈𝐵 (assuming 𝐕1 to be variable) would drive the BJT
transistor into saturation?

Figure 5

17) The following is a band diagram within an n-p-n bipolar junction transistor (BJT) at
equilibrium. Sketch in the Fermi level as a function of position. Qualitative accuracy is
sufficient.

Figure 6
18) Would decreasing the base width of a BJT increase, decrease, or leave unchanged the
following, assuming that the device remained unchanged otherwise? (Circle your
choice for each.)
a) the emitter injection efficency γ? increase / unchanged / decrease
b) the base transport factor B? increase / unchanged / decrease
c) the (common-emitter) gain β? increase / unchanged / decrease
d) the magnitude of the Early voltage 𝑉𝐴 ? increase/I unchanged / decrease
19) Sketch the cross section of an n-p-n BJT and point out the dominant current components
on it showing the correct directions of the various current vectors. If we increase the
base doping, qualitatively explain how the various components change.
20) Would decreasing the base doping of the BJT increase, decrease, or leave essentially
unchanged (circle the correct answers):
(a) emitter injection efficiency γ? increase / decrease / unchanged
(b) base transport factor B? increase / decrease / unchanged
(c) magnitude of the Early voltage 𝑉𝐴 ? increase / decrease / unchanged