EE 332

DEVICES AND CIRCUITS II

Chapter 1
(Review and Enhance knowledge)
COMMON EMITTER-COMMON
SOURCE without RE-RS

Chap13 - 1
 Chapter Goals

Understanding of concepts related to:

• Transistors as linear amplifiers
• dc and ac equivalent circuits
• Use of coupling and bypass capacitors and inductors to modify
dc and ac equivalent circuits
• Small-signal voltages and currents
• Small-signal models for diodes and transistors
• Identification of common-source and common-emitter
amplifiers
• Amplifier characteristics such as voltage gain, input and output
resistances and linear signal range

Chap13 - 2
 Introduction to Amplifiers

• BJT is an excellent amplifier when biased in forward-active region

• FET can be used as amplifier if operated in pinch-off or saturation
region.
• In these regions, transistors can provide high voltage, current and
power gains.
• Bias is provided to stabilize the operating point in desired operation
region.
• Q-point also determines
– Small-signal parameters of diode and transistor
– Voltage gain, input resistance, output resistance
– Maximum input and output signal amplitudes
– Power consumption

Chap13 - 3
 Coupling and Bypass Capacitors
C1 and C3 are large coupling capacitors
or dc blocking capacitors, their
reactance at signal frequency is
negligible.
C2 is bypass capacitor, provides low
impedance path for ac current from
emitter to ground, removing RE
• AC coupling through capacitors is
(required for good Q-point stability)
used to inject ac input signal and
from circuit when ac signals are
extract output signal without
considered.
disturbing Q-point
• Capacitors provide negligible
impedance at frequencies of interest
and provide open circuits at dc.
Chap13 - 4
Coupling and Bypass Capacitors

Exercise: Suppose that

capacitors C2=500 F C3=10
F. What are their reactances
at a frequency of 1000 Hz.
Give comments when
comparing with RE and R3

Chap13 - 5
Coupling and Bypass Capacitors

C2=500 F C3=10 F, f=1000Hz.

Answer:
Zc2=1/(2πfC2) = 0.318 << RE
=1500
Zc3= 1/(2πfC3)= 15.9  << R3
=100K

Chap13 - 6
 DC and AC Analysis

• DC analysis:
– Find dc equivalent circuit by replacing all capacitors by open circuits
and inductors by short circuits.
– Find Q-point from dc equivalent circuit by using appropriate large-
signal transistor model.
• AC analysis:
– Find ac equivalent circuit by replacing all capacitors by short circuits,
inductors by open circuits, dc voltage sources by ground connections
and dc current sources by open circuits.
– Replace transistor by small-signal model
– Use small-signal ac equivalent to analyze ac characteristics of amplifier.
– Combine end results of dc and ac analysis to yield total voltages and
currents in the network.
Chap13 - 7
 Biasing for BJT

• Goal of biasing is to establish known Q-point which in turn establishes

initial operating region of transistor.
• In BJT, Q-point is represented by (IC, VCE) for npn transistor or (IC, VEC)
for pnp transistor.
• Q-point controls values of diffusion capacitance, transconductance,
input and output resistances.
• In general, during circuit analysis, we use simplified mathematical
relationships derived for specified operation region and Early voltage is
assumed to be infinite.
• The practical biasing circuits used for BJT are:
– Four-Resistor Bias network
– Two-Resistor Bias network

Chap 5 - 8
Four-Resistor Bias Network for BJT
KVL

R RR
V V 1 R  1 2
EQ CC R  R EQ R  R
1 2 1 2

Chap 5 - 9
Four-Resistor Bias Network for BJT
R RR
V V 1 R  1 2
EQ CC R  R EQ R  R
1 2 1 2
V R I V R I
EQ EQ B BE E E
4  12,000I  0.7 16,000(  1) I
B F B
4V - 0.7V
I   2.68μA I   I  201μA
B 6 C F B
1.2310 
I  (  1) I  204μA
E F B
V V R I R I
CE CC C C E E

 R 
V   R  E  I  4.32V
CC  C   C

 F 
Q-point is (201 A, 4.32 V)
Chap 5 - 10
 Four-Resistor Bias Network for BJT
(contd.)
• All calculated currents > 0, VBC = VBE - VCE = 0.7 - 4.32 = - 3.62 V
• Load-line for the circuit is: 
 R 
V V   R  E  I 12 38,200I
CE CC  C   C C
 
 F

The two points needed to plot the load

line are (0, 12 V) and (314 A, 0).
Resulting load line is plotted on
common-emitter output characteristics.
IB= 2.7 A, intersection of corresponding
characteristic with load line gives Q-
point.

Chap 5 - 11
Four-Resistor Bias Network for MOSFET

Chap 5 - 12
 DC and AC Equivalent for BJT Amplifier

• All capacitors in original amplifier circuits are replaced by open

circuits, disconnecting vI, RI, and R3 from circuit.

Chap13 - 13
DC and AC Equivalent for BJT Amplifier

Chap13 - 14
DC and AC Equivalent for BJT Amplifier

Chap13 - 15
Chap13 - 16
DC and AC Equivalent for BJT Amplifier

Chap13 - 17
AC Equivalent for BJT Amplifier

R  R R  10kΩ 30kΩ
B 1 2
R  R R  4.3kΩ 100kΩ
C 3

Chap13 - 18
DC and AC Equivalents for MOSFET
Amplifier
DC equivalent circuit

AC equivalent circuit

Chap13 - 19
DC and AC Equivalents for MOSFET
Amplifier
DC equivalent circuit

AC equivalent circuit

Chap13 - 20
 DC and AC Equivalents for MOSFET
Amplifier
XL= 2πfL  DC equivalent circuit
Xc1=1/(2πfC1)0
Xc2=1/(2πfC2)0
Xc3=1/(2πfC3)0

AC equivalent circuit

Chap13 - 21
Small-Signal Operation of Diode
• The slope of the diode characteristic at the Q-
point is called the diode conductance and is
given by:
i I V


 I I
g  D  exp
S D  D S
d v V V  V
D Q  point T  T  T
I I For ID>>IS
g  D  D  40I
d V 0.025V D
T
• gd is small but non-zero for ID = 0 because
slope of diode equation is nonzero at origin.
• Diode resistance is given by:
1
r 
d g
d
Chap13 - 22
 Small-Signal Operation of Diode

  v   e x  exp(x)  1 x  1 x 2  1 x3  ...
 
i  I exp D 1  2 6
D S 
 V  
  T  

  V  v   
 V   v   Maclaurin’s
I  i  I exp D d  1  I exp D  exp d  1
D d S  V   S  V   V   series analysis
  T     T  T  

 2 3  

  v  v v  v   
 I exp
  D  1 d 
1  d  
1  d   ... 1
S  V  V 
2 V  6 V   
  T  T  T  T  
   
  2 3 
  V   v  v  v   v  
 I exp
  D  1  exp


D 
 d 1
 

d 
  
1 
d  
  ...
S V    V   V 2  V  6  V  
  T    T   T  T   T 
 

 2 3 
v  v   v  
 1   1  
i  (I  I ) d
  d    d   ...

d D S V  2 V   
6 V  
T
 T    T  
 

Chap13 - 23
 Small-Signal Operation of Diode
(contd.)
vd  v 
2
For linearity, id should be  1  d 
VT 2  VT 
proportional to vd
vd  v 
2
This represents the requirement [1 1  d  ]  0
VT 2  VT 
for small-signal operation of the vd
diode.  2
VT
vd  2VT  50mV
In practice, we choose:
2VT ID ID
vd   5mV id  g d vd  5mV  5mV  0.2 I D
10 VT 25mV
2VT id  0.2I D
vd   5mV
10
Chap13 - 24
Diode Resistance

1 VT
r  
d g I
d D
KT
V 
T q

Chap13 - 25
 Diode Resistance

50K; 12.5; and 8.33 m

Chap13 - 26
 Early Effect and Early Voltage
 In practical BJT, output characteristics have a positive slope in forward-
active region, collector current is in dependence of vCE.
 Early effect: curves intersect at common point vCE = -VA (Early voltage)
which lies between -150 V and -15 V.

-150V≤VA ≤-15V

Chap 5 - 27
 Small Signal Model of BJT
i iB IC
g  b  
v be v BE  oVT
v ce  0 Q  point

ib iB
gr   0
v ce v  0 vCE
Q  point
Using 2-port g-parameter network, be
i  y v  y vce i  g v  gr vce g  i c iC I
b 11 be 12 b be m   C
v BE VT
ic  y v  y vce ic  gmv  govce v be
v ce  0 Q  point
21 be 22 be
The port variables can represent either i iC IC
go  c  
time-varying part of total voltages and v ce v  0 vCE V A VCE
Q  point
be
currents or small changes in them away
from Q-point values.
o is small-signal common-emitter current gain of the BJT.
F : dc current gain; 0 : ac current gain. In general: F= 0 = 
 Hybrid-Pi Model of BJT

Transconductance:
I
gm  y  C  40I
21 V C
T
Input resistance:
1  oVT  o
• The hybrid-pi small-signal r   
model is the intrinsic low- y11 I C gm
frequency representation of the
Output resistance:
BJT.
1 1 V A  VCE V A
• Small-signal parameters are ro    
controlled by the Q-point and y22 g 0 IC IC
are independent of geometry of
BJT
Chap13 - 29
 Parameters of BJT Amplifier
o V V V
T  o
I
g m  C  40I r  ro  A CE
V C I gm I
T C C

Chap13 - 30
Parameters of BJT Amplifier

Chap13 - 31
 Equivalent Forms
of Small-Signal Model for BJT

• Voltage -controlled current source gmvbe can be transformed into

current-controlled current source,
v  i r
be b
gmv  gmi r  oi
be b b
v ce
ic  oi   oi
b r b
o
• Basic relationship ic=ib is useful in both dc and ac analysis when BJT
is in forward-active region.
Chap13 - 32
 Small Signal Operation of BJT
   v 
v 
i  I  ic  I exp
V
BE  
be 
i  I exp BE
 
C C S

V 
 exp
V


C S 
 V   T   T 
 T
   2 3 
 v v  v  
1   1  
 I 1 be   be    be   ...

C V 2V  6V  
 T  T   T  
 
 2 3 
v v  v  
1   1  
ic  i  I  I 
 be
  be    be   ...

C C C V 2V  6V  
 T  T   T  
 
For linearity, ic should be proportional to vbe vbe  2VT  50mV
 v  I

i  I 1 be I  C v I g v
C C  V  C V be C m be
 T T
Change in ic that corresponds to small-signal operation is:
ic gm v 0.005
 v  be   0.200
I I be V 0.025
C C T
Chap13 - 33
 Small-Signal Operation of Diode
(contd.)
vbe  v 
2
For linearity, ic should be  1  be 
VT 2  VT 
proportional to vbe
vbe  v 
2
This represents the requirement [1  1  be  ]  0
VT 2  VT 
for small-signal operation of the vbe
BJT.  2
VT
vbe  2VT  50mV
In practice, we choose:
2VT IC IC
vbe   5mV ic  g m vbe  5mV  5mV  0.2 I C
10 VT 25mV
2VT ic  0.2IC
vbe   5mV
10
Chap13 - 34
Small-Signal Analysis of Complete
C-E Amplifier: AC Equivalent

• Ac equivalent circuit is
constructed by assuming that all
capacitances have zero
impedance at signal frequency
and dc voltage source is ac
ground.
• Assume that Q-point is already
known.

R R R
B 1 2

Chap13 - 35
 Small-Signal Analysis of Complete
C-E Amplifier: Small-Signal Equivalent
v v
Avt  vc  v o   gm R
L
b be
Overall voltage gain from source vi
to output voltage across R3 is:
vo  vo  vbe  v
 be 

Av  v   v  v   Avt  v 
i  be  i  
 i 
 
 R r 
 Av   gm R 
 
 B 
L  R  R r 
R  ro R R  I B  
L C 3
Terminal voltage gain between
base and collector is:

Chap13 - 36
 C-E Amplifier Voltage Gain: Exercise

• Problem: Calculate voltage gain

• Given data: F =100, VA =75 V, Q-point is(1.45 mA, 3.41V),
R1 = 10 k, R2 = 30 k, R3 = 100 k, RC = 4.3 k, RI =1k.
• Assumptions: Transistor is in active region, O = F. Signals
are low enough to be considered small signals.
• Analysis:

Chap13 - 37
 C-E Amplifier Voltage Gain: Exercise

gm  40I  40(1.45mA)  58.0mS R  R R  7.5kΩ

C B 1 2

V V
R  ro R R  3.83kΩ r  A CE  75V  3.14V  54.1kΩ
L C 3 o
I 1.45mA
C
oV 100(0.025V) 
 R r 
r  T  1.72kΩ Av   gm R    130 42.3dB
 
B
I 1.45mA L R  R r 
C  I B 


R  ( R r ) 

v  (0.005V) I   8.57mV
 
 B
i  
 R r 
 B 

Chap13 - 38
C-E Amplifier Input Resistance

• Input resistance, the total resistance

looking into the amplifier at
coupling capacitor C1 represents
total resistance presented to source.

v x  ix ( R r )
B
vx
R   R r  R R r
in i B 1 2
x

Chap13 - 39
C-E Amplifier Output Resistance

• Output resistance is the total equivalent

resistance looking into the output of the
amplifier at coupling capacitor C3. Input
source is set to 0 and test source is
applied at output.
v v But vbe=0.
ix  x  x  gm v
R ro be
C
v
Rout  x  R ro  R As ro>> RC.
ix C C

Chap13 - 40
 Sample Analysis of C-E Amplifier

• Problem: Find voltage

gain Av, input and output
resistances Rin, Rout.
• Given data: F = 65, VA
=50 V
• Assumptions: Active-
region operation, VBE=0.7
V, small signal operating
conditions.
• Analysis: To find the Q-
point, dc equivalent circuit
is constructed.

Chap13 - 41
Sample Analysis of C-E Amplifier

Chap13 - 42
Sample Analysis of C-E Amplifier

105 I V  (  1) I (1.6 104)  5

B BE F B

I  3.71μA
B
I  65I  241μA
C B
I  66I  245μA
E B

5 104 I V  (1.6 104) I  (5)  0

C CE E
V  3.67V
CE

Chap13 - 43
 Sample Analysis of C-E Amplifier
(contd.)
Next we construct the ac
equivalent and simplify it.

R  R r  6.23kΩ
in B

gm  40I  9.6410 3S
C
oV
r  T  6.64kΩ Rout  R ro  9.57kΩ
I C
C 
R 
vo  
V V Av    gm ( Rout R )
 in   84.0
ro  A CE  223kΩ v 3  R  R 
I i  I in 
C
Chap13 - 44
Small Signal Model of MOSFET

Chap13 - 45
Small Signal Model of MOSFET

Chap13 - 46
 Small Signal Parameters of MOSFET

Kn  2 With
i   v v

 1 v

 v v V
D     condition DS GS TN
2  GS TN   DS 

1
2I V 1 V
gm  D  2K n I ro   DS  DS
V V D
I I
GS TN D D
1  V
  g mro  2K n I DS  1 2K n
f D I  I
D D
Chap13 - 47
 Small Signal Operation of MOSFET
Kn  2
i  v V 
for v  v V
D 2  GS TN  DS GS TN
K 

i  I  i  n  V V
D D d 2  GS TN 
2  2v V V

gs GS TN  v 2 
gs 

d
K
i  n 2v gs V
2   V
GS TN

 v gs2 
 vgs  0.2V V 


GS TN
 
 
For linearity, id should be proportional to vgs vgs  0.2 VGS VTN
Since MOSFET can be biased with (VGS - VTN) equal to several volts, it
can handle much larger values of vgs than corresponding values of vbe for
BJT.
Change in drain current that corresponds to small-signal operation is:
i 0.2(V V )
d  gm v  GS TN  0.4
I I
gs V V
D D GS TN
2
Chap13 - 48
 Kn  
2 
i  

v v 

1 v



D 2  GS TN   DS 

 
vgs  0.2 V  V 
 GS TN 

Chap13 - 49
Small Signal Parameters of JFET

50
 Small Signal Parameters of JFET

 
2
 v 
 
i I 
1 GS 
 1  v
  With v  v V
D DSS   DS GS P
 V   DS  condition
 
 P 

2I I 1  V
gm  D  2 DSS (V V ) ro  DS
V V 2 GS P
GS P V
P I
1 D
V I Linear condition
  g mro  2  DS  2 DSS
 
f V V V I
D vgs  0.2 V  V 
GS P P  GS P
51
Chap13 - 52
Sample Analysis of JFET C-S Amplifier

• Problem: Find voltage

gain, input and output
resistances.
• Given data: IDSS = 1 mA,
VP = -1V,  = 0.02 V-1
• Assumptions: Pinch-off
region of operation.
• Analysis: Dc equivalent
circuit is constructed. IG =
0, IS = ID.
• Choose VGS less negative
than VP.

Chap13 - 53
Sample Analysis of JFET C-S Amplifier
Analysis: Dc equivalent circuit is
constructed. IG = 0, IS = ID.
V  2000I
GS D  V 2
 
V  (2 10 )(110 )1
3  3  GS 

GS 

(  1) 

Choose VGS less negative than VP.

V  0.5V
GS
I  0.250mA
D

12  27,000I V  2000I
D DS S
V  4.75V
DS

Chap13 - 54
 Sample Analysis of JFET C-S Amplifier
(contd.)

Next we construct the ac

equivalent and simplify it.

2I I
gm  D  2 DSS (V  V ) 1.05mS R  R  1MΩ
V V V 2 GS P in G
GS P P
Rout  ro R  24.0kΩ
1 D
V 
R 
ro   DS  219kΩ
vo  
Av    gm ( Rout R )
 in   20.3
I v 3  R  R 
DS i  I in 

Chap13 - 55
Small-Signal Analysis of Complete C-S
Amplifier: AC Equivalent
• Ac equivalent circuit is
constructed by assuming that all
capacitances have zero
impedance at signal frequency
and dc voltage sources represent
ac grounds.
• Assume that Q-point is already
known.

R R R
G 1 2

Chap13 - 56
 Small-Signal Analysis of Complete C-E
Amplifier: Small-Signal Equivalent
v v
Avt  vd  v o   gm R
g gs L
Overall voltage gain from source vi
to output voltage across R3 is:
vo  vo  vgs  v 
 gs 
Av  v   v  v   Avt  v 
i  gs  i  
 i 
 
 R 
 Av   gm R   G 
L  R  R 
R  ro R R  I G 
L D 3
Terminal voltage gain between
gate and drain is:

Chap13 - 57
C-S Amplifier Voltage Gain: Example
• Problem: Calculate voltage gain, Rin; Rout;
condition of vi <=?
• Given data: Kn = 0.5 mA/V2, VTN = 1V,
= 0.0133 V-1, Q-point is (1.45 mA, 3.86
V), R1 = 430 k, R2 = 560 k, R3 = 100
k, RD = 4.3 k, RI = 1 k.
• Assumptions: Transistor is in active
region. Signals are low enough to be
considered small signals.
• Analysis:

Chap13 - 58
 C-S Amplifier Voltage Gain: Example

g m  2K n I 1.23mS R  R R  243kΩ
DS G 1 2

1
V R  ro R R  3.83kΩ
ro   DS  54.5kΩ L D 3
I
D  
 R 
Av   gm R  G   4.69  20lg 4.69 13.4dB
L  R  R 
 I G 

 
2I
v  0.2 V V


 0.2


D  0.48V
i  GS TN  Kn

Chap13 - 59
C-S Amplifier Input Resistance

• Input resistance of C-S amplifier is

much larger than that of
corresponding C-E amplifier.

v x  ix R
G
R R
in G

Chap13 - 60
C-S Amplifier Output Resistance

• For comparable bias points, output

resitances of C-S and C-E amplifiers are
similar.
In this case, vgs=0.
v
Rout  x  R ro  R As ro>> RD.
ix D D

Chap13 - 61
Sample Analysis of C-S Amplifier

• Problem: Find voltage gain,

input and output resistances;
condition of vi <=?
• Given data: Kn = 500 A/V2,
VTN = 1V, = 0.0167 V-
• Analysis: Dc equivalent
circuit is constructed

Chap13 - 62
Sample Analysis of C-S Amplifier
V
I  DS
1
5106

V 10  2 104( I  I )
DS D 1

K
I  n (0.4V V )2
D 2 DS TN
V  5V
DS

V  2V I  250A
GS D

Chap13 - 63
 Sample Analysis of C-S Amplifier
(contd.)
Next we construct the ac
equivalent and simplify it.

R R R  1MΩ
in G1 G2

g m  2K n I  5.20104S
DS
1 Rout  ro R R  18.2kΩ
V D G3
ro   DS  260kΩ vo

 R 

I Av    gm ( Rout R )
 in   7.93
D v 3  R  R 
i  I in 

Chap13 - 64
CURRENT GAIN AND POWER GAIN
OF CE AND CS AMPLIFIER
Small-Signal Analysis of Complete
C-E Amplifier

io
ii

io
ii

Chap13 - 66
Current gain and power gain of Common-Emitter amplifier

ii io

   
 R r   R 
  gm R 
 
Av B   g  in 
m RL 
 R r   R  Rin 
LR  

 I B   I 

Current gain Power Gain

vo
i R v R  Rin R R Ap  Av A
A  o  3  o I  A I in i
i v v
i i v R R
i R R i 3 3
I in

67
Small-Signal Analysis of Complete
C-S Amplifier

io
ii

io
ii

Chap13 - 68
 Current gain and power gain of Common-Source amplifier

ii io

 
 R 
Av   gm R  G 
LR  R 
 
 I G 
Current gain Power gain
vo
i R v R R R R A p  Av A
A  o  3  o I G A I G i
i v v
i i v R R
i i 3 3
R R
I G
COMMON-EMITTER/COMMON-SOURCE
AMPLIFIER CHARACTERISTICS

Chap13 - 70
End of chapter 1

Chap13 - 71