MIDSEM REPORT

ON
Progress on thin film based memristors technology
BY

ANANYA BHARGAVA 2022A8PS1245P

Birla Institute of Technology and Sciences, Pilani

29st September, 2024

INSTRUCTOR’S NAME: MR. SATYENDRA KUMAR

MOURYA
 INDEX
Page No.

1. Introduction and History 3

2. Types of Memristor 4

3. Working Principle 5

4. Fabrication and Selection 6

5. TCAD tools 7
 INTRODUCTION AND HISTORY

• A memristor (memory resistor) is a fundamental electronic

component that regulates the flow of electrical current in a circuit
and can retain memory of past electrical states even when power
is switched off.
• First postulated by Leon Chua in 1971, the memristor is
recognized as the fourth fundamental passive circuit element
alongside resistors, capacitors, and inductors. Unlike these
traditional elements, which relate two fundamental circuit
variables, the memristor links charge and magnetic flux. This
unique characteristic allows memristors to "remember" the
amount of charge that has passed through them, making them
highly suitable for memory storage applications.
• Characteristics include Non-Volatility, Resistance variability, Low
Power consumption, Fast switching speed, Passive element, Non-
Linear, No phase-shift introduced between current and voltage at
zero crossing.
• The potential applications of memristors are vast, including high-
density memory storage, signal processing, analogue
computation, and (AI) applications and neuromorphic computing.
 TYPES OF MEMRISTORS
1. 2D Materials: Two-dimensional materials such as graphene,
molybdenum disulfide (MoS₂), and hexagonal boron nitride (h-BN)
are often used in fabricating 2D memristors. They are particularly
suited for flexible and transparent electronics, where traditional
materials like silicon may not perform well.
Advantages- High Density and Scalability, Flexibility and
Transparency, Fast Switching and Low Power Consumption.
Electronic Properties includes High Electron Mobility, Low Power
Consumption, High On/Off Ratios, Flexible and Transparent,
Strong Exciton Binding Energy
2. 3D Materials: 3D memristors often utilize bulk materials and
three-dimensional architectures to enhance their performance
and scalability.
Advantages- Increased Storage Capacity, Enhanced Performance,
Versatility, High Integration Density.
Electronic Properties includes High Storage Density, Enhanced
Scalability, Improved Switching Speed, High On/Off Ratio, Greater
Thermal Stability, Potential for Multi-Level Storage
 WORKING OF MEMRISTORS
Memristors operate based on the movement of charged ions or oxygen
vacancies within a material (TiO2) when a voltage is applied across the
device. These vacancies act as charge carriers and determine the
device's resistance, which changes based on the history of the current
passing through the memristor.
1. When Voltage is Not Applied- the oxygen vacancies in the material
are relatively immobile, and the memristor remains in its default state,
either in a HRS or LRS depending on the previous current flow. The
device "remembers" its resistance state even when power is off.
2. When Voltage is Applied- an electric field is generated across the
memristor. This field drives the movement of oxygen vacancies within
the material. These vacancies, typically positively charged, migrate
toward the negatively charged electrode, forming conductive pathways
in the material. The more vacancies that gather, the more conductive
the pathways, resulting in a decrease in resistance. This change in
resistance is proportional to the amount of charge that has flowed
through the device.
3. Bandgap and Doping- as oxygen vacancies accumulate, the material
becomes n-type doped, reducing its bandgap in localized regions. This
makes it easier for electrons to move through the material, increasing
its overall conductivity. The doping effect lowers the resistance of the
memristor, creating a conductive state.
4. Retaining the Charge- the solid lattice structure of the material traps
the oxygen vacancies after they move. This means that even when the
applied voltage is removed, the vacancies remain in place, maintaining
the conductive pathways. As a result, the memristor "remembers" its
last resistance state, which can be read even after power is turned off.
This property of retaining information without power makes memristors
non-volatile memory devices.
 FABRICATION OF MEMRISTORS
Some of the Fabrication techniques are –
1. Sputtering: used to deposit thin oxide layers like TiO2 and HfO2,
enables fine control over film thickness and composition. Essential
for creating scalable and high-performance memristors.
2. Sol-Gel Processing: It involves the deposition of oxide layers
through solution-based methods. It is cost effective.
3. Atomic Layer Deposition (ALD): It provides high precision, ensures
excellent film consistency across large areas (Uniformity), used for
HfO2 deposition in advanced memristor designs.
4. Electrohydrodynamic Jet Printing: utilizes electric fields to pattern
oxide materials precisely. It enables the creation of flexible and
transparent memristors.
5. Thermal Oxidation: Involves oxidizing metal films at elevated
temperatures, offers a straightforward method for producing
uniform oxide layers (Simplicity), early memristor prototypes.
Some of the oxides used according to its Switching Uniformity,
Scalability, Compatibility are –
1. Titanium Dioxide (TiO2): known for stable switching properties
and ease of fabrication.
2. Hafnium Oxide (HfO2): gives High Performance, exhibits excellent
endurance and scalability, offers better resistance control and low
power consumption.
3. Zinc Oxide (ZnO): Offers high mobility and transparency, flexible
4. Aluminum Oxide (Al2O3): Often used as a dielectric layer to
improve device stability.
Morphologies refer to the physical arrangement of the oxide materials, which
includes thin films, nanowires, or layered structures that enhance device
performance. Nanostructures increase surface area and facilitate ion mobility.
 TCAD TOOLS
Technology Computer-Aided Design (TCAD) tools are essential for
simulating semiconductor devices, helping engineers optimize designs
and predict performance. Two prominent TCAD tools are
1. Silvaco TCAD -It offers a comprehensive suite for semiconductor
simulation, featuring:
• Device Simulation: allows 2D and 3D modeling of devices like
MOSFETs and memristors, analyzing their electrical characteristics,
Process Simulation, Compact Modeling: SmartSpice enables
circuit simulation, integrating device models for performance
predictions.
• User-Friendly Interface: Its intuitive GUI makes complex
simulations accessible for various users.
Silvaco is widely used in developing advanced semiconductor devices
and integrated circuits.
2. Sentaurus TCAD- It provides sophisticated simulation capabilities,
including:
• Device Simulation: allows detailed 2D and 3D modeling for
various semiconductor technologies, including FinFETs and SOI
devices.
• Process Simulation models and optimizes manufacturing steps
like doping and etching.
• Circuit Simulation: Integrates with HSPICE for accurate circuit
simulations, linking device models to circuit designs.
• Advanced Physical Models: Incorporates detailed models for
carrier transport and quantum effects, ideal for nanoscale devices.
THANK-YOU