DATA SHEET

MMBT3904
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
POWER 225 mWatts SOT- 23 Unit: inch (mm)
VOLTAGE 40 Volts
FEATURES
• NPN epitaxial silicon, planar design

.007(.20)MIN
.119(3.00)
• Collector-emitter voltage VCE = 40V .110(2.80)

.056(1.40)
.047(1.20)
• Collector current IC = 200mA
• Pb free product are available : 99% Sn above can meet Rohs

.103(2.60)
.086(2.20)
environment substance directive request

.083(2.10) .006(.15)
.066(1.70) .002(.05)
MECHANICAL DATA
Case: SOT-23, Plastic

.044(1.10)
.035(0.90)
Terminals: Solderable per MIL-STD-202G, Method 208 .006(.15)MAX
.020(.50)
Approx. Weight: 0.008 gram .013(.35)

Marking: S1A 3
Top View COLLECTOR
3
Collector

1
BASE

1 2 2
Base Emitter EMITTER

ABSOLUTE RATINGS

PA R A M E TE R S ym bol Value U nits

C ollector-E m itterVoltage V C EO 40 V

C ollector-B ase Voltage V C BO 60 V

E m itter-B ase Voltage V EBO 6.0 V

C ollectorC urrent-C ontinuous IC 200 mA

THERMAL CHARACTERISTICS

PA R A M E TE R S ym bol Value U nits

M ax P ow erD issipation (N ote 1) P TO T 225 mW

O
Therm alR esistance ,Junction to A m bient RθJA 556 C /W

O
Junction Tem perature TJ -55 to 150 C

O
S torage Tem perature TISTG -55 to 150 C

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

STAD-NOV.26.2004 PAGE . 1
 ELECTRICAL CHARACTERISTICS TA=25oC

PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s

C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC = 1 . 0 m A , IB = 0 40 - - V

C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R) C B O IC = 1 0 u A , IE = 0 60 - - V

E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R) E B O IE = 1 0 u A , IC = 0 6 .0 - - V

B a s e C ut o f f C ur r e nt IB L V C E =3 0 V, V E B =3 .0 V - - 50 nA

C o l l e c t o r C ut o f f C ur r e nt IC E X V C E =3 0 V, V E B =3 .0 V - - 50 nA

IC = 0 . 1 m A , V C E = 1 . 0 V 40 - -
IC = 1 . 0 m A , V C E = 1 . 0 V 70 - -
D C C ur r e nt G a i n ( N o t e 2 ) hF E IC = 1 0 m A , V C E = 1 . 0 V 100 - 300 -
IC = 5 0 m A , V C E = 1 . 0 V 60 - -
IC = 1 0 0 m A , V C E = 1 . 0 V 30 - -

C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e IC = 1 0 m A , IB = 1 . 0 m A 0 .2
V C E (S AT) - - V
(No te 2 ) IC = 5 0 m A , IB = 5 . 0 m A 0 .3

B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e IC = 1 0 m A , IB = 1 . 0 m A 0 .6 5 - 0 .8 5
V B E (S AT) V
(No te 2 ) IC = 5 0 m A , IB = 5 . 0 m A - - 0 .9 5

C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = 5 V , IE = 0 , f = 1 M H z - - 4 .0 pF

E m i t t e r - B a s e C a p a c i t a nc e C EBO V C B = 0 . 5 V , IC = 0 , f = 1 M H z - - 8 .0 pF

V C C =3 V,V B E =-0 .5 V,
D e l a y Ti m e td - - 35 ns
IC = 1 0 m A , IB = 1 . 0 m A

V C C =3 V,V B E =-0 .5 V,
R i s e Ti m e tr - - 35 ns
IC = 1 0 m A , IB = 1 . 0 m A

V C C = 3 V , IC = 1 0 m A
S t o r a g e Ti m e ts - - 200 ns
IB 1 = IB 2 = 1 . 0 m A

V C C = 3 V , IC = 1 0 m A
F a l l Ti m e tf - - 50 ns
IB 1 = IB 2 = 1 . 0 m A

Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+3V

275ȍ
300ns
+ 1 0 .9 V D u ty C y c le ~ 2 .0 %

0
-0 .5 V C S* < 4 p F
10K ȍ
< 1ns

D e la y a n d R is e T im e E q u iv a le n t T e s t C ir c u it
3V
+ 3V

ȍ
2755ȍ
27
1 0 to 5 0 0 u s
+ 10 .9 V D u ty C yc le ~ 2 .0%

0
C SS** << 44pF
C pF
10K ȍ
-9 .1 V
< 1ns 1N916

S to ra g e a n d F a ll T im e E q u iv a le n t T e s t C irc u it

STAD-NOV.26.2004 PAGE . 2
 ELECTRICAL CHARACTERISTICS CURVE

300 1.400

VCE = 1V
TJ = 150 ˚C 1.200
250

1.000
200
TJ = 100 ˚C TJ = 100 ˚C
0.800

VBE (V)
hFE

150 TJ = 25 ˚C
TJ = 25 ˚C 0.600
100
0.400

50 TJ = 150
0.200 VCE = 1V

0 0.000
0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000
Collector Current, I C (mA) Collector Current, IC (mA)

Fig. 1. Typical hFE vs Collector Current Fig. 2. Typical VBE vs Collector Current

1.000 1.0

TJ = 25 ˚C
IC/IB = 10 TJ = 150 ˚C
TJ = 100 ˚C
VBE(sat) (V)
VCE(sat) (V)

0.100

TJ = 25 ˚C TJ = 150 ˚C

IC/IB = 10

0.010 0.1
0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100
Collector Current, I C (mA) Collector Current, I C (mA)

Fig. 3. Typical VCE (sat) vs Collector Current Fig. 4. Typical VBE (sat) vs Collector Current
10

TJ = 25 ˚C
CIB (EB)
Capacitance (pF)

COB (CB)

1
0.1 1 10 100
Reverse Voltage, VR (V)

Fig. 5. Typical Capacitances vs Reverse Voltage

STAD-NOV.26.2004 PAGE . 3
 MOUNTING PAD LAYOUT

SOT-23 Unit: inch (mm)

0.035(0.9)

0.078(2.0)
0.031(0.8) 0.037(0.95)

ORDER INFORMATION

• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel

LEGAL STATEMENT

IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.

Copyright Pan Jit International Inc. 2003

All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
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STAD-NOV.26.2004 PAGE . 4