CENTUM PHASE-1 EXAMINATION

CLASS XII CBSE CENTUM Date : 24.10.2024

TIME: 3.HR. PHYSICS Max. Marks: 70

General Instructions:
Read the following instructions carefully.
(1) There are 33 questions in all. All questions are compulsory.
(2) This question paper has 5 sections: Section A, Section B, Section C, Section D and Section E
(3) All sections are compulsory
(4) Section A consists of 16 questions, 12 MCQ and 4 Assertion Reasoning based of 1 mark
each, Section B Contains 5 Questions of two marks each, Section C contains seven
questions of carrying 3 marks each, Section D contains two case study based questions of
four marks each and Section E contains three long answer questions of five marks each.
(5) There is no overall choice However, an internal choice has been provided in one question
in section B, one question in section C, one question in each CDQ in section D and all
three questions in Section E. You have to attempt only one of the choices in such
questions.
(6) Use of calculators is not allowed
(7) All questions are compulsory.
(i) C = 3 x 108 m/s
(ii) me = 9.1 x 10-31 Kg
(iii) e = 1.6 x 10-19 C
(iv) 0  4 107 TmA1
(v) h  6.63 1034 Js
(vi)  0  8.854 1012 C 2 N 1m2
(vii) Avogadro’s number = 6.0231023 per gram mole.
SECTION-A
1. When an dielectric is placed in a electric field, the electric field inside the dielectric
a) Increases b) Decreases c) Constant d) Zero
2. The angle between the electric lines of force and an equipotential surface -
a) 900 b) 450 c) 00 d) 1800
3. Three capacitors, each of capacitance C = 3 mF, are connected as shown in the figure. The
equivalent capacitance between points P and S is
 (a) 3 mF (b) 9 mF (c) 1 mF (d) 6 mF
4. A parallel plate capacitor with air as dielectric is charged to a potential V. It is then connected to an
uncharged parallel plate capacitor filled with wax of dielectric constant k. The common potential of
both capacitors is
(a) V (b) kV (c) (1 + k) V (d) V/ (1+ k)
5. A cell of emf E and internal resistance r is connected across an external resistor R. The graph showing
the variation of P.D. across R versus R is

6. V-I graphs for parallel and series combinations of two metallic resistors are shown in figure. Which of
the graphs represents parallel and series combination?

(a) A represents parallel combination. B represents series combination

(b) B represents parallel combination. A represents series combination
(c) Both A and B represents Series combination.
(d) Both A and B represents parallel combination.
7. The relaxation time in conductors
(a) Increases with the increases of temperature
(b) Decreases with the increases of temperature
(c) Independent of temperature
(d) all of sudden changes at 273K
8. In following figure shows currents in a part of electrical circuit, then the value of unknown
current I (in ampere) is given by :
 (a) 0.3 A (b) 0.5 A (c) 1.3 A (d) None of these
9. In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference
between A and B is

(a) 1.3 V (b) 2.3 V (c) 0 (d) 0.5 V

10. In given figure, V0 is the potential barrier across a p-n junction, when no battery is connected across the
junction

(a) 1 and 3 both correspond to forward bias of junction

(b) 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junction
(c) 1 corresponds to forward bias and 3 corresponds to reverse bias of junction.
(d) 3 and 1 both correspond to reverse bias of junction.
11. The output of the given circuit shown in figure.

(a) Would be zero at all times.

 (b) Would be like a half wave rectifier with positive cycles in output.
(c) Would be like a half wave rectifier with negative cycles in output.
(d) Would be like that of a full wave rectifier.
12. Match List 1 with List 2

List-I List-II
a Two like charges are brought nearer e the force between them
decreases.
b Two unlike charge of same magnitude brought f potential energy of the system
nearer increase
c When a third charge of same nature is placed g mutual forces are not affected
equidistance from two like charges
d When a dielectric medium is introduced h potential energy of the system
between two charges decreases

a) a – h , b - f , c – g , d - e b) a - f , b – h , c – g , d - e
c) a - h , b - f , c – e , d - g d) a – g , b - e , c - f , d – h
A Both Assertion and reason are true and reason is correct explanation of assertion.
B Assertion and reason both are true but reason is not the correct explanation of assertion.
C Assertion is true, reason is false.
D. Assertion is false, reason is true.
13. Assertion (A) the electric field at a point due to a charge distribution is zero but electric potential is not
zero.
Reason (R) Electric field is a vector quantity whereas electric potential is a scalar quantity
14. Assertion: When identical cells are connected in parallel to an external load, the effective emf increases.
Reason: All the cells will be sending unequal currents to the external load in the same direction.
15. Assertion: A pure semiconductor has negative temperature coefficient of resistance.
Reason: In a semiconductor on raising the temperature, more charge carriers are released, conductance
increases and resistance decreases.
16. Assertion: The diffusion current in a p-n junction is from the p-side to the n-side
Reason: The diffusion current in a p-n junction is greater than the drift current when the junction is in
forward biased
SECTION-B
17. Differentiate the Behaviour of a Conductor and Dielectric in the Presence of External Electric Field.
(Or)
 The two graphs are drawn below, show the variations of electrostatic potential (V) with 1/ r
(r being the distance of field point from the point charge) for two point charges q1 and q2.
(i) What are the signs of the two charges?
(ii) Which of the two charges has the larger magnitude and why?

18. Graph showing the variation of current versus voltage for a material Ga-As is shown in the figure.
Identify the region of: (i) negative resistance (ii) where Ohm’s law followed

19. Draw energy band diagrams of an n-type and p-type semiconductor at temperature T > 0 K. Mark the
donor and acceptor energy levels with their energies
20. In the following diagram, which bulb out of B1 and B2 will glow and why?

21. Draw and explain the output wave form across the load resister R, is in the input wave form is shown
below in the given figure
 SECTION-C
22. Derive an expression for the electric field intensity at a point on the equatorial line of an electric
dipole of dipole moment p and length 2a. What is the direction of this field?
23. Two charges 5 × 10–8 C and – 3 × 10–8 C are located 16 cm apart. At what point(s) on the line joining
the two charges is the electric potential zero. Take the potential at infinity to be zero.
24. (a) Depict the equipotential surfaces for a system of two identical positive point charges placed a
distance ‘d’ apart.
(b) Draw an equipotential surface for a system consisting of two charges Q, – Q separated by a
distance r in air. Locate the points where the potential due to the dipole is zero.
(c) Concentric equipotential surfaces due to a charged body placed at the centre are shown. Identify
the polarity of the charge and draw the electric field lines due to it.

25. Find the equivalent capacitance of the network shown in the figure, when each capacitor is of 1 µF.
When the ends X and Y are connected to a 6 V battery, find out (i) the charge and (ii) the energy
stored in the network

26. Draw a circuit diagram showing balancing of Wheatstone bridge. Use Kirchhoff ’s rules to obtain the
balance condition in terms of the resistances of four arms of Wheatstone Bridge.
27. Calculate the potential difference across the 4ohm resistor in the given electrical circuit, using
Kirchhoff ’s rules.

Using Kirchhoff’s rules, calculate the current in the arm AC of the given circuit
28. If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias,
what will be the values of current I1, I2, I3 and I4?

SECTION-D
29. The surface on which all points have the same potential is called the equipotential surface. On the
equipotential surface, to move a charge from one point to another no work is required. Equipotential
Points: The same electric potential points on the electric field are called equipotential points. The line
or curve connecting the points is known as an equipotential line. The surface on which the point lies
is called the equipotential surface. The volume in which the points are filled is known as an
equipotential volume. In an equipotential surface, if a point charge is said to move from point VA to
VB, then the work done in moving the charge is given by,
W = q0 (V A – V B ) as (V A – V B )is said to be zero and the total work done, W = 0.

(i) Which of the above figures represent uniform electric field?

(a) fig (a) only (b) fig (a&c) (c) fig (b&d) (d) all the above
(ii) A charge +Q is moved from point A to point B. Choose the correct statement:
(a) Work done in fig (d) is the least
 (b)Work done in fig (a) is greater than that in other cases
(c)Work done in fig (a) & (c) are equal but greater than that in
fig(b&d)
(d) Work done in all three cases is equal
(iii) A charge -3μC is taken from a point P to point Q where potential
difference is 2.4V. Calculate the work done
(a)0 J (b) 7.2 J (c) – 7.2 J (d) -7.2 μJ
(iv) Suppose a charge +20 μC is trapped at the centre of a uniformly
charged conducting sphere of radius 5cm and surface charge density
15 μC/cm2 . What is the work done required to move the 20 μC to
the surface?
(a) 100 μJ (b) 300 μJ (c) Zero (d) 25 μJ
OR
(b) The electric potential of earth is taken to be zero, because earth is a good
(a) Insulator (b) conductor (c) semiconductor (d) dielectric
30. Materials are classified on the basis of their conductivity as metals, semiconductors and insulators.
Metals are having low resistivity and high conductivity. While semiconductors are having
resistivity and conductivity in between metals and insulators. And finally insulators are those
which are having high resistivity or very low conductivity. Semiconductors may exist as
elemental semiconductors and also compound semiconductors. Si and Ge are elemental
semiconductor and CdS, GaAs, CdSe, anthracene, polypyrrole etc. are the compound
semiconductors. Each electron in an atom has different energy level and such different energy
levels continuing forms the band of energy called as energy bands. That energy band which has
energy levels of Valence electrons is called as Valence band. And the energy band which is
present above the Valence band is called as conduction band. On the basis of energy bands
materials are also defined as metals, semiconductors and insulators. In case of metals, conduction
band and Valence band overlaps with each other due to which electrons are easily available for
conduction. In case of insulators, there is some energy gap between conduction band and
Valence band due to which no free electrons are easily available for conduction. And in
semiconductors, there is a small energy gap between conduction band and Valence band and if
we give some external energy then electron from Valence band goes to conduction band due to
which conduction will be possible. These semiconductors are classified as intrinsic
semiconductors and extrinsic semiconductors also. Intrinsic semiconductors are those
semiconductors which exist in pure form. And intrinsic semiconductors has number of free
electron is equal to number of holes. The semiconductors doped with some impurity in order to
increase its conductivity are called as extrinsic semiconductors. Two types of dopants are used
they are trivalent impurity and pentavalent impurity also. The extrinsic semiconductors doped
with pentavalent impurity like Arsenic, Antimony, Phosphorus etc. are called as n – type
semiconductors. In n type semiconductors electrons are the majority charge carriers and holes
are the minority charge carriers. When trivalent impurity is like Indium, Boron, Aluminium etc.
 are added to extrinsic semiconductors then p type semiconductors will be formed. In p type
semiconductors holes are majority charge carriers and electrons are the minority charge carriers.
1.) In case of p-type semiconductors___
a) nh<< ne b) nh = ne c) nh>> ne d) nh= ne = 0
2.) An intrinsic semiconductor behaves like _____ at T = 0K.
a) Conductor b) metal c) non-metal d) insulator
3.) If the energy band gap Eg> 3 eV then such materials are called as
a) Conductors b) semiconductors c) insulators d) superconductors
4. The conductivity of a semiconductor increases with increase in temperature because:
(a) Number density of free current carries increases
(b) Relaxation time increases
(c) Both number density of carriers and relaxation time increases
(d) Number density of current
OR
The probability of electrons to be found in the conduction band of an intrinsic semiconductor
at a finite temperature
(a) Increases exponentially with increasing band gap
(b) Decreases expontially with increasing band gap
(c) Decreases with increasing temperature
(d) is independent of the temperature of the band gap
SECTION-E
31. An electric dipole is held in a uniform electric field.
(i) Derive an expression for torque acting on it and specify its direction.
(ii) Derive an expression for the work done in rotating a dipole from the angle θ0 to θ1 in a
uniform electric field E.
(iii) What would happen if the external field E is increasing
(i) parallel to p and (ii) antiparallel to p ?
OR
State Gauss theorem in electrostatics.
Apply this theorem to obtain the expression for the electric field at a point due to an infinitely long,
thin, uniformly charged straight wire of linear charge density λ C m–1
32. Derive an expression for the electric potential at a point due to an electric dipole. Mention the
contrasting features of electric potential of a dipole at a point as compared to that due to a
single charge.
OR
 Derive an expression for the capacitance of a parallel plate capacitor when a dielectric slab of dielectric
constant K and thickness t = d/2 but of same area as that of the plates is inserted between the capacitor
plates. (d = separation between the plates).
33. Draw the circuit arrangement for studying the V–I characteristics of a p-n junction diode (i) in forward
bias and (ii) in reverse bias. Draw the typical V–I characteristics of a silicon diode. Describe briefly
the following terms: (i) “minority carrier injection” in forward bias (ii) “breakdown voltage” in
reverse bias.
OR
State the principle of working of p-n diode as a rectifier. Explain with the help of a circuit diagram, the
use of p-n diode as a full wave rectifier. Draw a sketch of the input and output waveforms.