T_RIA-2
T_RIA-2
T_RIA-2
B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules
Features
Electrically isolated base plate
UL E78996 approved
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
IT(AV) 50 70 90 A
@ TC 70 70 70 o
C
It
2
@ 50Hz 8550 13860 15900 A2s
TJ -40 to 125 o
C
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T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code peak reverse voltage peak reverse voltage @ 25°C
V V µA
10 100 150
20 200 300
T50RIA 40 400 500
T70RIA 60 600 700 100
T90RIA 80 800 900
100 1000 1100
120 1200 1300
On-state Conduction
Parameter T50RIA T70RIA T90RIA Units Conditions
IT(AV) Max. average on-state current 50 70 90 A 180° conduction, half sine wave
@ Case temperature 70 70 70 °C
IT(RMS) Max. RMS on-state current 80 110 141 A
ITSM Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage
Switching
Parameter T50RIA T70RIA T90RIA Units Conditions
tgd Typical turn-on time 0.9 µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr Typical reverse recovery time 3.0 µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
tq Typical turn-off time 110 µs TJ = TJ max., ITM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
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T..RIA Series
Bulletin I27105 rev. B 02/02
Blocking
Parameter T50RIA T70RIA T90RIA Units Conditions
IRRM Maximum peak reverse and 15 mA TJ = TJ = TJ max.
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted,
TJ = 25°C, t = 1s
dv/dt Critical rate of rise of off-state 500 V/µs TJ = TJ max., linear to 80% rated VDRM (1)
voltage
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90
Triggering
Parameter T50RIA T70RIA T90RIA Units Conditions
PGM Max. peak gate power 10 12 12 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 2.5 3.0 3.0 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 2.5 3.0 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 10 10 10 V
gate voltage
VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 2.5 2.5 TJ = 25°C load; Ra = 1Ω
1.5 1.5 1.5 TJ = TJ max.
IGT Max. required DC gate 250 270 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 100 120 120 mA TJ = 25°C load; Ra = 1Ω
50 60 60 TJ = TJ max.
VGD Max. gate voltage 0.2 0.2 0.2 V @ TJ = TJ max., rated VDRM applied
that will not trigger
IGD Max. gate current 5.0 6.0 6.0 mA
that will not trigger
di/dt Max. rate of rise of 200 A/µs VD = 0.67 rated VDRM, ITM = 2 x rated di/dt
turned-on current 180 Ig = 400mA for T50RIA and Ig = 500mA for
160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs
150 For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
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T..RIA Series
Bulletin I27105 rev. B 02/02
T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24
T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
T 50 RIA 120
G
1 2 3 4
1 - Module type
2 - Current rating
3 - Circuit configuration **
4 - Voltage code : code x 10 = VRRM
Outline Table
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T..RIA Series
Bulletin I27105 rev. B 02/02
13 0 130
11 0 110
10 0 100
Conduction Angle Conduction P eriod
90 90
80 80
30
70 60 70 90
90 60 120
60 1 20 60
1 80 30 180 DC
50 50
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80
Average On-s tate Current (A) Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80
Maximum Average On-s tate P ower L os s (W)
0 .5
180 0. R
0 .3
7 th S
K/
K /W
70
K /W
120 W A
=0
90 1
K/
W
.1
60 60
K /W
30 1 .5
-D
50 K /W
el t
a
R MS L imit 2K
R
/W
40
3K
/W
30
Conduction Angle 5 K /W
20
T 50R IA.. S eries 10 K /W
10 T J = 125 C
0
0 10 20 30 40 50
0 20 40 60 80 100 120
Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)
Fig. 3 - On-state Power Loss Characteristics
11 0
Maximum Average On-s tate P ower L os s (W)
10 0 DC
R
0.
thS
3K
1 80 0.
A
90
/W
5
=0
1 20 K/
W
.1
80 90 0 .7
K /W
K/
60 W
-D
70 1K
el t
30 /W
a R
60
1.5
50 R MS L imit K /W
2K
/W
40
3 K /W
30 Conduction P eriod
5 K /W
20 T 5 0R IA.. S eries
10 T J = 125 C
0
0 10 20 30 40 50 60 70 80
0 20 40 60 80 100 120
Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C)
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T..RIA Series
Bulletin I27105 rev. B 02/02
1200 1300
At Any R ated L oad Condition And W ith Maximum Non R epetitive S urge Current
P eak Half S ine Wave On-s tate Current (A)
500 500
1 10 100 0.01 0.1 1
Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s )
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Ins tantaneous On-s tate Current (A)
100
T J = 25 C
10 T J = 125 C
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Ins tantaneous On-s tate Voltage (V)
100
R ectangular gate puls e (1) P GM = 10W, tp = 5 ms
a) R ecommended load line for (2) P GM = 20W, tp = 2 ms
Ins tantaneous Gate Voltage (V)
1
(1) (2) (3) (4)
VGD
IGD T 50 R IA.. S eries F requency L imited by P G(AV)
0.1
0.00 1 0.0 1 0.1 1 10 100 1000
Ins tantaneous Gate Current (A)
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T..RIA Series
Bulletin I27105 rev. B 02/02
130 130
110 110
100 100
Conduction Angle Conduction P eriod
90 90
80 80
30 70 60
70 60
30 90
90
60 120 60 120
180 180 DC
50 50
0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120
Average On-s tate Current (A) Average On-s tate Current (A)
Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics
100
Maximum Average On-s tate P ower L os s (W)
180
0.
R
90
3K
120 0.
th S
5
/W
0 .7 K/
90 W
A
80
=0
K/
60 W
.1
K
70 30 1K
/W
/W
-D
60 R MS L imit
el ta
1 .5
K /W
R
50
2K
/W
40
3K
/W
30 Conduction Angle
5 K /W
20
T 70R IA.. S eries
10 T J = 125 C 7 K /W
0
0 10 20 30 40 50 60 0
70 20 40 60 80 100 12 0
Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)
140
Maximum Average On-s tate P ower L os s (W)
DC
R
120 180 0.
thS
3
A
120 K/
=
W
0.
90
1
0 .5
K/
100 K/
W
60 W
-D
30 0 .7
el
K/
ta
80 W
R
1K
R MS L imit /W
60 1 .5
K /W
Conduction P eriod 2K
40 /W
3 K /W
T 70R IA.. S eries
20 T J = 125 C 5 K /W
0
0 20 40 60 80 100 0
120 20 40 60 80 100 120
Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C)
Fig. 15 - On-state Power Loss Characteristics
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T..RIA Series
Bulletin I27105 rev. B 02/02
1500 170 0
At Any R ated L oad Condition And W ith Maximum Non R epetitive S urge Current
P eak H alf S ine Wave On-s tate Current (A)
900 900
800
800 T 70R IA.. S eries T 70R IA.. S eries
700
700 600
1 10 100 0.01 0.1 1
Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s )
Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current
1000
Ins tantaneous On-s tate Current (A)
100
T J = 25 C
10 T J = 125 C
1
0 0.5 1 1.5 2 2.5 3 3.5 4
Ins tantaneous On-s tate Voltage (V)
100
R ectangular gate puls e (1) P GM = 12W, tp = 5ms
a) R ecommended load line for (2) P GM = 30W, tp = 2ms
Ins tantaneous Gate Voltage (V)
1
(1) (2) (3) (4)
VGD
IGD T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV)
0.1
0.0 01 0.01 0.1 1 10 100 1000
Ins tantaneous Gate Current (A)
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T..RIA Series
Bulletin I27105 rev. B 02/02
13 0 130
Maximum Allowable Cas e T emperature ( C)
11 0 110
10 0 100
Conduction Angle Conduction P eriod
90 90
80 80
70 30 70
60 90
90
60 1 20 60 60 120
1 80
30 180 DC
50 50
0 20 40 60 80 1 00 0 20 40 60 80 100 120 140 160
Average On-s tate Current (A) Average On-s tate Current (A)
140
Maximum Average On-s tate P ower L os s (W)
180
R th
0.
120 3
120
S
K/
A
90 W
=
0.
0.
5K
60
1K
/W
100
/W
30 0 .7
-D
K /W
el
R MS L imit
ta
80 1K
R
/W
60 1 .5
K /W
2 K /W
40 Conduction Angle
T 90R IA S eries 3 K /W
20 T J = 12 5 C
0
0 10 20 30 40 50 60 70 80 0
90 20 40 60 80 100 120
Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)
180
Maximum Average On-s tate P ower L os s (W)
DC
R
160 1 80
th S
A
=
1 20
0.
140 0.
1
90 3K
K/
W
/W
60
-D
120
el
0. 5
30
ta
K /W
R
100 0. 7
K /W
80 R MS L imit 1K
/W
1 .5
60 K /W
Conduction Period
40 2 K/
W
T 90R IA.. S eries
20 T J = 125 C
0
0 20 40 60 80 100 120 140 160
0 20 40 60 80 100 120
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T..RIA Series
Bulletin I27105 rev. B 02/02
1600 1800
At Any R ated L oad Condition And With Maximum Non R epetitive S urge Current
P eak Half S ine Wave On-s tate Current (A)
1100 1200
1100
1000
1000
900
900
800 T 90R IA.. S eries T 90R IA.. S eries
800
700 700
1 10 100 0.01 0.1 1
Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s )
Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current
1000
Ins tantaneous On-s tate Current (A)
100
T J = 25 C
10 T J = 125 C
1
0 0.5 1 1.5 2 2.5 3 3.5
Ins tantaneous On-s tate Voltage (V)
1
T rans ient T hermal Impedance Z thJC (K /W )
0.01
0.0 01 0.01 0.1 1 10 10 0
S quare Wave P uls e Duration (s )
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T..RIA Series
Bulletin I27105 rev. B 02/02
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02
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