T_RIA-2

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Bulletin I27105 rev.

B 02/02

T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules

Features
Electrically isolated base plate

Types up to 1200 V RRM

3500 V RMS isolating voltage


50 A
Simplified mechanical designs, 70 A
rapid assembly
90 A
High surge capability

Large creepage distances

UL E78996 approved

Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.

Major Ratings and Characteristics


Parameters T50RIA T70RIA T90RIA Units

IT(AV) 50 70 90 A

@ TC 70 70 70 o
C

IT(RMS) 80 110 141 A

ITSM @ 50Hz 1310 1660 1780 A

@ 60Hz 1370 1740 1870 A

It
2
@ 50Hz 8550 13860 15900 A2s

@ 60Hz 7800 12650 14500 A2s

I2√t 85500 138500 159100 A2√s

VDRM/VRRM 100 to 1200 V

TJ -40 to 125 o
C

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T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code peak reverse voltage peak reverse voltage @ 25°C
V V µA
10 100 150
20 200 300
T50RIA 40 400 500
T70RIA 60 600 700 100
T90RIA 80 800 900
100 1000 1100
120 1200 1300

On-state Conduction
Parameter T50RIA T70RIA T90RIA Units Conditions
IT(AV) Max. average on-state current 50 70 90 A 180° conduction, half sine wave

@ Case temperature 70 70 70 °C
IT(RMS) Max. RMS on-state current 80 110 141 A
ITSM Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage

on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied


surge current 1100 1400 1500 t = 10ms 100% VRRM
1150 1460 1570 t = 8.3ms reapplied Sine half wave,
I2t Maximum I2t for fusing 8550 13860 15900 A2s t = 10ms No voltage Initial TJ = TJ max.
7800 12650 14500 t = 8.3ms reapplied
6050 9800 11250 t = 10ms 100% VRRM

5520 8950 10270 t = 8.3ms reapplied


I2√t Maximum I2√t for fusing 85500 138500 159100 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 0.97 0.77 0.78 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.13 0.88 0.88 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 4.1 3.6 2.9 mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 3.3 3.2 2.6 (I > π x IT(AV)), @ TJ max.
slope resistance
VTM Maximum on-state voltage drop 1.60 1.55 1.55 V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2

IH Maximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C


IL Maximum latching current 400 mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C

Switching
Parameter T50RIA T70RIA T90RIA Units Conditions
tgd Typical turn-on time 0.9 µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr Typical reverse recovery time 3.0 µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
tq Typical turn-off time 110 µs TJ = TJ max., ITM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM

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T..RIA Series
Bulletin I27105 rev. B 02/02

Blocking
Parameter T50RIA T70RIA T90RIA Units Conditions
IRRM Maximum peak reverse and 15 mA TJ = TJ = TJ max.
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted,
TJ = 25°C, t = 1s
dv/dt Critical rate of rise of off-state 500 V/µs TJ = TJ max., linear to 80% rated VDRM (1)
voltage
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90

Triggering
Parameter T50RIA T70RIA T90RIA Units Conditions
PGM Max. peak gate power 10 12 12 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 2.5 3.0 3.0 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 2.5 3.0 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 10 10 10 V
gate voltage
VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 2.5 2.5 TJ = 25°C load; Ra = 1Ω
1.5 1.5 1.5 TJ = TJ max.
IGT Max. required DC gate 250 270 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 100 120 120 mA TJ = 25°C load; Ra = 1Ω
50 60 60 TJ = TJ max.
VGD Max. gate voltage 0.2 0.2 0.2 V @ TJ = TJ max., rated VDRM applied
that will not trigger
IGD Max. gate current 5.0 6.0 6.0 mA
that will not trigger
di/dt Max. rate of rise of 200 A/µs VD = 0.67 rated VDRM, ITM = 2 x rated di/dt
turned-on current 180 Ig = 400mA for T50RIA and Ig = 500mA for
160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs
150 For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6

Thermal and Mechanical Specifications


Parameter T50RIA T70RIA T90RIA Units Conditions
TJ Max. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 150 °C
range
RthJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.2 K/W Mounting surface smooth, flat and greased
case to heatsink
T Mounting to heatsink 1.3 ± 10% Nm M3.5 mounting screws (2) non lubricated
torque ± 10% terminals 3 ± 10% M5 screw terminals threads
wt Approximate weight 54 g See outline table
Case style D-56 T type
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.

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T..RIA Series
Bulletin I27105 rev. B 02/02

∆R Conduction (per Junction)


(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.


Devices Units
180o 120o 90o 60o 30o 180o 120o 90o 60o 30o
T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 K/W

T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24

T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20

Ordering Information Table

Device Code Circuit configuration **

T 50 RIA 120

G
1 2 3 4

1 - Module type
2 - Current rating
3 - Circuit configuration **
4 - Voltage code : code x 10 = VRRM

Outline Table

All dimensions in millimeters (inches)

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T..RIA Series
Bulletin I27105 rev. B 02/02

13 0 130

Maximum Allowable Cas e T emperature ( C)


Maximum Allowable Cas e T emperature ( C)

T 50R IA.. S eries T 50R IA.. S eries


R thJC (DC) = 0.65 K /W 120 R thJC (DC) = 0.65 K /W
12 0

11 0 110

10 0 100
Conduction Angle Conduction P eriod

90 90

80 80
30
70 60 70 90
90 60 120
60 1 20 60
1 80 30 180 DC
50 50
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80

Average On-s tate Current (A) Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

80
Maximum Average On-s tate P ower L os s (W)

0 .5

180 0. R
0 .3

7 th S
K/
K /W

70
K /W

120 W A
=0
90 1
K/
W
.1
60 60
K /W

30 1 .5
-D

50 K /W
el t
a

R MS L imit 2K
R

/W
40
3K
/W
30
Conduction Angle 5 K /W
20
T 50R IA.. S eries 10 K /W
10 T J = 125 C

0
0 10 20 30 40 50
0 20 40 60 80 100 120
Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)
Fig. 3 - On-state Power Loss Characteristics

11 0
Maximum Average On-s tate P ower L os s (W)

10 0 DC
R
0.

thS
3K

1 80 0.
A

90
/W

5
=0

1 20 K/
W
.1

80 90 0 .7
K /W

K/
60 W
-D

70 1K
el t

30 /W
a R

60
1.5
50 R MS L imit K /W
2K
/W
40
3 K /W
30 Conduction P eriod
5 K /W
20 T 5 0R IA.. S eries
10 T J = 125 C

0
0 10 20 30 40 50 60 70 80
0 20 40 60 80 100 120

Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C)

Fig. 4 - On-state Power Loss Characteristics

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T..RIA Series
Bulletin I27105 rev. B 02/02

1200 1300
At Any R ated L oad Condition And W ith Maximum Non R epetitive S urge Current
P eak Half S ine Wave On-s tate Current (A)

P eak Half S ine Wave On-s tate Current (A)


R ated V R R M Applied F ollowing S urge. Vers us P uls e T rain Duration. Control
1100 Initial T J = 125 C 1200
Of Conduction May Not B e Maintained.
@ 60 H z 0.0083 s Initial T J = 125 C
@ 50 H z 0.0100 s 1100
1000 No Voltage R eapplied
1000 R ated V R R MR eapplied
900
900
800
800
700
700

600 T 50R I A.. S eries 600 T 50R IA.. S eries

500 500
1 10 100 0.01 0.1 1
Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s )

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

1000
Ins tantaneous On-s tate Current (A)

100

T J = 25 C

10 T J = 125 C

T 50R IA.. S eries

1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Ins tantaneous On-s tate Voltage (V)

Fig. 10 - On-state Voltage Drop Characteristics

100
R ectangular gate puls e (1) P GM = 10W, tp = 5 ms
a) R ecommended load line for (2) P GM = 20W, tp = 2 ms
Ins tantaneous Gate Voltage (V)

rated di/dt : 20V, 30ohms ; (3) P GM = 50W, tp = 1 ms


tr=0.5 s , tp>=6 s (4) P GM = 100W, tp = 500 s
b) R ecommended load line for
10 <=30% rated di/dt : 20V, 65ohms
tr=1 s , tp>=6 s
(b) (a)
T j=-40 C
T j=25 C
T j=125 C

1
(1) (2) (3) (4)

VGD
IGD T 50 R IA.. S eries F requency L imited by P G(AV)
0.1
0.00 1 0.0 1 0.1 1 10 100 1000
Ins tantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

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T..RIA Series
Bulletin I27105 rev. B 02/02

130 130

Maximum Allowable Cas e T emperature ( C)


Maximum Allowable Cas e T emperature ( C)

T 70R IA.. S eries T 70R IA.. S eries


R thJC (DC) = 0.50 K /W 120 R thJC (DC) = 0.50 K /W
120

110 110

100 100
Conduction Angle Conduction P eriod
90 90

80 80

30 70 60
70 60
30 90
90
60 120 60 120
180 180 DC
50 50
0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120

Average On-s tate Current (A) Average On-s tate Current (A)
Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics

100
Maximum Average On-s tate P ower L os s (W)

180
0.

R
90
3K

120 0.
th S
5
/W

0 .7 K/
90 W
A

80
=0
K/
60 W
.1
K

70 30 1K
/W

/W
-D

60 R MS L imit
el ta

1 .5
K /W
R

50
2K
/W
40
3K
/W
30 Conduction Angle
5 K /W
20
T 70R IA.. S eries
10 T J = 125 C 7 K /W

0
0 10 20 30 40 50 60 0
70 20 40 60 80 100 12 0
Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)

Fig. 18 - On-state Power Loss Characteristics

140
Maximum Average On-s tate P ower L os s (W)

DC
R

120 180 0.
thS

3
A

120 K/
=

W
0.

90
1

0 .5
K/

100 K/
W

60 W
-D

30 0 .7
el

K/
ta

80 W
R

1K
R MS L imit /W
60 1 .5
K /W
Conduction P eriod 2K
40 /W
3 K /W
T 70R IA.. S eries
20 T J = 125 C 5 K /W

0
0 20 40 60 80 100 0
120 20 40 60 80 100 120

Average On-s tate Current (A) Max imum Allowable Ambient T emperature ( C)
Fig. 15 - On-state Power Loss Characteristics

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T..RIA Series
Bulletin I27105 rev. B 02/02

1500 170 0
At Any R ated L oad Condition And W ith Maximum Non R epetitive S urge Current
P eak H alf S ine Wave On-s tate Current (A)

P eak H alf S ine Wave On-s tate Current (A)


R ated VR R M Applied F ollowing S urge. 160 0 Vers us P uls e T rain Duration. Control
1400 Initial T J = 125 C
150 0 Of Conduction May Not B e Maintained.
@ 6 0 H z 0.0083 s Initial T J = 125 C
1300 140 0
@ 5 0 H z 0.0100 s No Voltage R eapplied
130 0 R ated V R R MR eapplied
1200
120 0
1100
110 0
1000 100 0

900 900
800
800 T 70R IA.. S eries T 70R IA.. S eries
700
700 600
1 10 100 0.01 0.1 1
Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s )

Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current

1000
Ins tantaneous On-s tate Current (A)

100

T J = 25 C

10 T J = 125 C

T 70R IA.. S eries

1
0 0.5 1 1.5 2 2.5 3 3.5 4
Ins tantaneous On-s tate Voltage (V)

Fig. 10 - On-state Voltage Drop Characteristics

100
R ectangular gate puls e (1) P GM = 12W, tp = 5ms
a) R ecommended load line for (2) P GM = 30W, tp = 2ms
Ins tantaneous Gate Voltage (V)

rated di/dt : 20V, 20ohms ; (3) P GM = 60W, tp = 1ms


tr=0.5 s , tp>=6 s (4) P GM = 200W, tp = 300 s
b) R ecommended load line for
10 <=30 % rated di/dt : 15V, 40ohms
tr=1 s , tp>=6 s
(b) (a)
T j=-40 C
T j=2 5 C
T j=125 C

1
(1) (2) (3) (4)

VGD
IGD T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV)
0.1
0.0 01 0.01 0.1 1 10 100 1000
Ins tantaneous Gate Current (A)

Fig. 19 - Gate Characteristics

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T..RIA Series
Bulletin I27105 rev. B 02/02

13 0 130
Maximum Allowable Cas e T emperature ( C)

Maximum Allowable Cas e T emperature ( C)


T 90R IA.. S eries T 90R IA.. S eries
12 0 R thJC (DC) = 0.38 K /W R thJC (DC) = 0.38 K /W
120

11 0 110

10 0 100
Conduction Angle Conduction P eriod
90 90

80 80

70 30 70
60 90
90
60 1 20 60 60 120
1 80
30 180 DC
50 50
0 20 40 60 80 1 00 0 20 40 60 80 100 120 140 160

Average On-s tate Current (A) Average On-s tate Current (A)

Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics

140
Maximum Average On-s tate P ower L os s (W)

180
R th

0.
120 3
120
S

K/
A

90 W
=

0.
0.

5K
60
1K

/W
100
/W

30 0 .7
-D

K /W
el

R MS L imit
ta

80 1K
R

/W

60 1 .5
K /W

2 K /W
40 Conduction Angle

T 90R IA S eries 3 K /W
20 T J = 12 5 C

0
0 10 20 30 40 50 60 70 80 0
90 20 40 60 80 100 120
Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)

Fig. 29 - On-state Power Loss Characteristics

180
Maximum Average On-s tate P ower L os s (W)

DC
R

160 1 80
th S
A
=

1 20
0.

140 0.
1

90 3K
K/
W

/W
60
-D

120
el

0. 5
30
ta

K /W
R

100 0. 7
K /W

80 R MS L imit 1K
/W
1 .5
60 K /W
Conduction Period

40 2 K/
W
T 90R IA.. S eries
20 T J = 125 C

0
0 20 40 60 80 100 120 140 160
0 20 40 60 80 100 120

Average On-s tate Current (A) Maximum Allowable Ambient T emperature ( C)

Fig. 29 - On-state Power Loss Characteristics

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T..RIA Series
Bulletin I27105 rev. B 02/02

1600 1800
At Any R ated L oad Condition And With Maximum Non R epetitive S urge Current
P eak Half S ine Wave On-s tate Current (A)

P eak Half S ine Wave On-s tate Current (A)


R ated V R R M Applied F ollowing S urge. 1700 Vers us P uls e T rain Duration. Control
1500
Initial T J = 125 C Of Conduction May Not B e Maintained.
1600
1400 @ 60 Hz 0.0083 s Initial T J = 125 C
@ 50 Hz 0.0100 s 1500 No Voltage R eapplied
1300 R ated VR R M R eapplied
1400
1200 1300

1100 1200
1100
1000
1000
900
900
800 T 90R IA.. S eries T 90R IA.. S eries
800
700 700
1 10 100 0.01 0.1 1
Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s )

Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current

1000
Ins tantaneous On-s tate Current (A)

100

T J = 25 C

10 T J = 125 C

T 90R IA.. S eries

1
0 0.5 1 1.5 2 2.5 3 3.5
Ins tantaneous On-s tate Voltage (V)

Fig. 21 - On-state Voltage Drop Characteristics

1
T rans ient T hermal Impedance Z thJC (K /W )

S teady S tate Value


R thJC = 0.65 K /W
R thJC = 0.50 K /W
R thJC = 0.38 K /W T 5 0R IA.. S eries
(DC Operation) T 70R IA.. S eries
0.1 T 90R IA.. S eries

0.01
0.0 01 0.01 0.1 1 10 10 0
S quare Wave P uls e Duration (s )

Fig. 34 - Thermal Impedance Z thJC Characteristics

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T..RIA Series
Bulletin I27105 rev. B 02/02

Data and specifications subject to change without notice.


This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02

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