Total No. of Questions : 8] SEAT No.

8
23
[Total No. of Pages : 2
P6490

ic-
tat
[5868]-106

4s
F.E.

7:3
BASIC ELECTRONICS ENGINEERING

02 91
8:3
(2019 Pattern) (Semester - I & II) (104010)

0
Time : 2½ Hours] [Max. Marks : 70

20
6/0 13
Instructions to the candidates:
1) Solve Q.1 or Q.2, Q.3 or Q.4, Q.5 or Q.6, Q.7 or Q.8.
0
8/2
2) Neat diagrams must be drawn wherever necessary.
.23 GP

3) Figures to the right indicate full marks.

4) Use of logarithmic tables slide rule, Mollier charts, electronic pocket
E
80

8
calculator and steam tables is allowed.
C

23
5) Assume suitable data if necessary.

ic-
16

tat
Q1) a) Convert [6]
8.2

4s
i) (2BA.OC)16 to Octal.
.24

7:3
ii) (462.27)8 to Hexadecimal
91
49

8:3
b) Why NAND and NOR are known as universal logic gates? [6]
30
20

c) Draw and explain block diagram of microprocessor. [5]

01
02

OR
8/2
GP

Q2) a) Perform the following arithmatic operations. [5]

6/0

i) (110011 – 111001) using 2's compliment method.

CE
80

8
ii) (111011.11 + 100100.01)

23
.23

b) State and prove Demorgon's Theorems. [6]

ic-
16

c) Draw and explain block diagram of microcontroller. [6]

tat
8.2

4s
.24

7:3

Q3) a) Explain principle of operation and block diagram Digital Multimeter. [6]
91
49

b) Explain working of Auto-Transformer List its applications. [6]

8:3
30

c) Explain operation of DC Ammeter with suitable diagram. Explain circuit

20

or multi-range Ammeter. [6]

01
02

OR
8/2
GP

Q4) a) Draw block diagram of function generator and explain functions of each
6/0

block. [6]
CE
80

b) Explain Digital storage oscilloscope. List its applications. [6]

.23

c) Explain operation of DC voltmeter with suitable diagram. Explain circuit

16

of multi-range voltmeter. [6]

8.2
.24

P.T.O.
49
Q5) a) Draw construction of LVDT and explain its operation. Write its

8
23
advantages, disadvantages and applications. [6]

ic-
b) Explain RTD with its construction, working, advantages, disadvantages

tat
and applications. [6]

4s
7:3
c) Explain operation of Bio-sensor with one application. [5]

02 91
8:3
0
OR

20
6/0 13
Q6) a) What are different types of transducers? Give one example of each type.
0
8/2
[5]
.23 GP

b) Explain working principle of strain guage. Explain load cell. [6]

E
80

8
C

23
c) Explain Thermocouple with its construction, working, advantages,

ic-
disadvantages and applications. [6]
16

tat
8.2

4s
.24

7:3
91
Q7) a) Explain different types of cables used in electronic communication. [6]
49

8:3
30

b) Draw and explain block diagram of FM transmitter. [6]

20
01
02

c) Draw and explain block diagram of GSM. [6]

8/2
GP

OR
6/0
CE
80

8
Q8) a) With the help of block diagram, explain operation of communication

23
.23

system. [6]
ic-
16

tat
b) Explain IEEE electromagnetic frequency spectrum and state allotment of
8.2

4s

frequency bands for different applications. [6]

.24

7:3
91

c) Explain block diagram of AM transmitter (High Power). [6]

49

8:3
30
20
01
02


8/2
GP
6/0
CE
80
.23
16
8.2
.24

[5868]-106 2
49
Total No. of Questions : 4] SEAT No. :

8
23
PB5 [6267]-5
[Total No. of Pages : 2

ic-
tat
F.E. (All Branches) (Insem)

0s
BASIC ELECTRONICS ENGINEERING

8:1
(2019 Pattern) (Semester - II) (104010)

02 91
0:4
Time : 1 Hour] [Max. Marks : 30

0
41
2/0 13
Instructions to the candidates:
1) Solve Q.1 or Q.2, Q.3 or Q.4.
0
2) Figures to the right side indicates full mark
3/2
.23 GP

3) Draw neat diagram wherever necessary.

4) Assume suitable data if necessary.
E
82

8
C

23
ic-
Q1) a) Compare Active and Passive Components. List out Active components.
16

tat
8.2

[5]

0s
.24

8:1
91
b) Draw and Explain V-I characteristics of P-N junction Diode and define
49

0:4
following parameters. [5]
30
41

i) Cut-in Voltage.
01
02
3/2

ii) PIV
GP
2/0

c) Explain zener diode as a voltage regulator with the help of its circuit
CE
82

diagrams. [5]

8
23
.23

OR
ic-
16

tat
Q2) a) Explain impact of Electronics on Industry and Society. [5]
8.2

0s
.24

8:1
91

b) Explain the operation of Bridge Rectifier with suitable diagram and

49

0:4

waveforms. [5]
30
41

c) Explain the Concept of Drift and Diffusion Current with diagram. [5]
01
02
3/2
GP

Q3) a) Draw and explain BJT as a switch. [5]

2/0
CE
82

b) Give the Ideal Values of Op-Amp and typical values of IC 741 parameters.
[5]
.23
16

c) Draw and explain construction & working of N channel E-MOSFFT.[5]

8.2

OR
.24
49

[6267]-5 1 P.T.O.
Q4) a) Draw the circuit diagram of Single stage CE amplifier and explain the

8
23
function of each component. [5]

ic-
tat
0s
b) Draw and explain functional Block Diagram of Operational Amplifier.[5]

8:1
02 91
0:4
0
41
c) Draw and explain Drain characteristics of N channel E-MOSFET and
2/0 13
show its operating region. [5]
0
3/2
.23 GP
E

… … …
82

8
C

23
ic-
16

tat
8.2

0s
.24

8:1
91
49

0:4
30
41
01
02
3/2
GP
2/0
CE
82

8
23
.23

ic-
16

tat
8.2

0s
.24

8:1
91
49

0:4
30
41
01
02
3/2
GP
2/0
CE
82
.23
16
8.2
.24
49

[6267]-5 2
Total No. of Questions : 4] SEAT No. :

8
23
PA-1683 [Total No. of Pages : 2

ic-
[5931]-1006

tat
First Year (Engineering)

0s
BASIC ELECTRONICS ENGINEERING

3:2
02 91
(2019 Pattern) (Semester - I) (104010)

0:3
0
31
Time : 1 Hour] 2/0 13 [Max. Marks : 30
0
Instructions to the candidates:
1/2
.23 GP

1) Attempt Q.1 or Q.2 and Q.3 or Q.4.

2) Figures to the right indicate full marks.
E
81

8
3) Assume suitable data, wherever necessary.
C

23
4) Use of electronic pocket calculator is allowed.

ic-
16

tat
Q1) a) How electronic components are categerised in active and passive
8.2

0s
components and compare them. [5]
.24

3:2
91
b) Draw and explain V-I characteristics of P-M Junction Diode and define
49

0:3
these parameters. [5]
30
31

i) Cut-in Voltage
01
02
1/2

ii) PIV
GP
2/0

iii) Reverse safuration current

CE
81

8
c) Explain how Zener Diode can be used as voltage regulator. [5]

23
.23

OR ic-
16

tat
8.2

0s

Q2) a) Explain impact of electronics on industry and society. [5]

.24

3:2

b) Explain working of Bridge Rectifier circuit with the help of wave forms.[5]
91
49

0:3

c) Determine the minimum and maximum input voltage for which zener
30
31

Diode works as voltage regulator, [5]

01
02

For zener assume

1/2
GP
2/0

Iz (min) = 1 MA
CE
81

Iz (max) 10 MA
.23

Zz = 0- Ω Vz = 5V
16
8.2

and RL = 1K Ω Rs = 470 Ω
.24

P.T.O.
49
Q3) a) Draw output characteristics of BJT in common Emitter configaration.

8
23
Indicate different operating regions in it. [5]

ic-
b) Draw circuit diagram of single stage E-MOSFET amplifier in common

tat
source configuration and explain functions of each component used in

0s
it. [5]

3:2
02 91
c) Draw and explain functional black diagram of operational amplifier. [5]

0:3
0
31
2/0 13 OR
Q4) a) Draw circuit diagram of single stage BJT amplifier in common emitter
0
1/2
.23 GP

configuration and explain function of each components. [5]

b) Explain working of N-channel E-MOSFET with the help of its
E
81

8
construction. [5]
C

23
ic-
c) Define following parameters of op-amp and mention their ideal and
16

tat
practical values. [5]
8.2

0s
i) CMRR
.24

3:2
91
49

ii) Input Bias Current

0:3
30
31

iii) Input offset voltage

01
02

iv) Slew Rate

1/2
GP

v) PSRR
2/0
CE
81

8
23
.23

 ic-
16

tat
8.2

0s
.24

3:2
91
49

0:3
30
31
01
02
1/2
GP
2/0
CE
81
.23
16
8.2
.24

[5931]-1006 2
49
Total No. of Questions : 8] SEAT No. :

8
23
P-9071 [Total No. Of Pages : 2

ic-
tat
[6178]-6

0s
F.E.

5:3
02 91
BASIC ELECTRONICS ENGINEERING

3:3
0
41
(2019 Pattern) (Semester - I/II) (104010)
8/0 13
Time : 2½ Hours] [Max. Marks : 70
0
1/2
.23 GP

Instrictions to the candidates:

1) Attempt Q.1 or Q.2, Q.3 or 4,Q.5 or Q.6, Q.7 or Q.8.
E
80

2) Figure to right indicate full mark.

8
C

23
ic-
Q1) a) Draw and Explain full adder using two half adders with a Truth Table and
16

tat
give its sum and carry equation. [6]
8.2

0s
.24

5:3
b) Give the expression and truth table of the Basic Gates. [6]
91
49

3:3
30

c) State and prove De Morgan’s laws. [6]

41
01
02

OR
1/2
GP

Q2) a) Convert the following.

8/0
CE

i) (5F1.6C)16 to octal ii) Convert the (9D.33)16 to Decimal. [6]

80

8
23
.23

b) Draw and explain block diagram of Microprocessor.

ic-
[6]
16

tat
8.2

0s

c) Classify Gates and write the IC numbers with Truth Table. [6]
.24

5:3
91
49

3:3

Q3) a) Explain Function Generator with block diagram. [6]

30
41

b) Explain the working principle of Autotransformer. Give its three

01
02

applications. [5]
1/2
GP
8/0

c) Draw and explain the block diagram of digital Multi meter. [6]
CE
80

OR
.23
16
8.2

P.T.O.
.24
49
 8
Q4) a) Explain how to convert Galvanometer to Analog Ammeter and how to

23
use multi range Ammeter. [6]

ic-
tat
b) Draw and explain the block diagram of AC/DC power supply. [5]

0s
5:3
c) Compare CRO and DSO. [6]

02 91
3:3
Q5) a) Draw the construction of LVDT and explain its operation. Write its

0
41
8/0 13
advantages, disadvantages and applications. [6]
0
1/2
.23 GP

b) Explain working, principle and one application of biosensors. [6]

E

c) Explain the working principle of strain gauge.Explain load cell. [5]

80

8
C

23
ic-
OR
16

tat
8.2

0s
Q6) a) Differentiate active and passive sensors. [6]
.24

5:3
91
49

b) What is mean by thermocouple? Explain the principle, construction and

3:3
30

working of thermocouple. Also state its advantages, disadvantages and

41

applications. [6]
01
02
1/2
GP

c) State and explain the selection criteria of Sensors. [5]

8/0
CE
80

Q7) a) Explain IEEE electromagnetic frequency spectrum and state allotment of

8
23
frequency bands for different applications. [6]
.23

ic-
16

tat
b) Compare types of cables used in Electronic Communication System.[6]
8.2

0s
.24

5:3

c) Draw and explain the elements of communication system. [6]

91
49

3:3
30

OR
41
01
02

Q8) a) Draw and explain AM transmitter. [6]

1/2
GP
8/0

b) Draw and explain the block diagram of GSM system for mobile. [6]
CE
80
.23

c) Explain the concept of Cellular Network. [6]

16

  
8.2
.24

[6178]-6 2
49
Total No. of Questions : 4] SEAT No. :

8
23
P1273 [Total No. of Pages : 2

ic-
tat
OCT/FE/INSEM/-6

4s
F.E. (Semester - I)

3:2
BASIC ELECTRONICS ENGINEERING

01 91
0:3
(2019 Pattern)

0
91
Time : 1 Hour] 4/1 13 [Max. Marks : 30
0
Instructions to the candidates:
0/2
.23 GP

1) Answer Q.1 or Q.2, Q.3 or Q.4

2) Figure to right indicate full marks.
E
80

8
C

23
ic-
Q1) a) Compare active and passive components explain passive components.[5]
16

tat
8.2

b) Explain the operation of full wave Rectifier with suitable diagram and

4s
wave forms. [5]
.24

3:2
91
49

0:3
c) Explain the construction and working principle of LED. [5]
30
91

OR
01
01
0/2

Q2) a) Explain impact of electronics on Industry. [5]

GP
4/1

b) Explain the construction and working of = P - N junction diode. Draw its

CE
80

8
V - I characteristics. [5]

23
.23

ic-
c) Draw circuit diagram of zener diode as voltage regulator and Explain it.
16

tat
[5]
8.2

4s
.24

3:2
91

Q3) a) Draw and explain BJT as a switch. [5]

49

0:3
30
91

b) Explain construction and operation of N - channel EMOSFET. [5]

01
01

c) For inverting amplifier using op = Amp, if Rf = 100 K, R1 = 10K, VCC

0/2
GP

= ±10V, Vi = 2V
4/1

i) Calcalate output voltage.

CE
80

ii) Is the result in part (i) practically possible? Justify. [5]

.23

OR
16
8.2
.24

P.T.O.
49
Q4) a) Explain construction of BJT with respect to area and doping

8
23
concentration. Mention the types of BJT. [5]

ic-
b) Explain construction and operation of p - channel EMOSFET. [5]

tat
4s
c) Write ideal and practical values of five parameters of op-Amp. [5]

3:2
01 91
M M M

0:3
0
91
4/1 13
0
0/2
.23 GP
E
80

8
C

23
ic-
16

tat
8.2

4s
.24

3:2
91
49

0:3
30
91
01
01
0/2
GP
4/1
CE
80

8
23
.23

ic-
16

tat
8.2

4s
.24

3:2
91
49

0:3
30
91
01
01
0/2
GP
4/1
CE
80
.23
16
8.2
.24

FE/Insem./-6 2
49
Total No. of Questions :4] SEAT No. :

8
23
P5 FE/Insem./APR-5
[Total No. of Pages : 1

ic-
tat
F.E. (Semester - II)

6s
104010 : BASIC ELECTRONICS ENGINEERING

3:0
(2019 Pattern)

02 91
0:4
0
Time : 1 Hour] [Max. Marks : 30

01
4/0 13
Instructions to the candidates:
1) Answer Q.1 or Q.2, Q.3 or Q.4.
0
3/2
.23 GP

2) Assume suitable data if necessary.

E
80

Q1) a) What is extrinsic semiconductor. Explain P-type & N-type

8
C

23
semiconductor. [5]

ic-
b) Draw and Explain Half Wave Rectifier (HWR) with its corresponding
16

tat
input and output waveforms. [5]
8.2

6s
c) Compare LED and Photodiode. [5]
.24

3:0
91
OR
49

0:4
Q2) a) Define active and passive components. Explain them with suitable
30
01

examples. [5]
01
02

b) For full wave bridge rectifier, applied input voltage is 5sin wt. Calculate
3/2

average output voltage, RMS voltage and PIV rating of diode used. [5]
GP
4/0

c) Explain V-I characteristics of zener diode. [5]

CE
80

8
23
Q3) a) Draw and explain_______output characteristics of BJT in common
.23

emitter configuration. Show different regions of operation. [5]

ic-
16

tat
b) Draw and explain MOSFET as a switch. [5]
8.2

6s

c) For a Non - Inverting amplifier using op-amp if R f=20k Ω and

.24

3:0

R1=1k- Ω , Vcc= ± 15V. Calculate Output voltage for vin = 3V and

91
49

0:4

comment on the result. [5]

30
01

OR
01
02

Q4) a) Define transistor. Mention its types. For BJT, if JB=20 μA and IE=2MA.
3/2
GP

Calculate value of Ic and β (Beta). [5]

4/0

b) Draw and Explain the drain characteristics of N-channel EMOSFET.

CE
80

Show the different regions of operation on the characteristics. [5]

.23

c) Draw and explain functional block diagram of operational amplifier

16

(op-amp). [5]
8.2
.24

  
49

FE/Insem.-5 1
Total No. of Questions : 8] SEAT No. :

8
23
P4936 [Total No. of Pages : 2

ic-
[5667]-1006

tat
3s
F.E. (Semester - I)

3:1
BASIC ELECTRONICS ENGINEERING

01 91
9:5
(2019 Pattern)

0
90
1/1 13
Time : 2½ Hours] [Max. Marks : 70
0
2/2
.23 GP

Instructions to the candidates :

1) Neat diagrams must be drawn wherever necessary.
E

2) Figures to right indicate full marks.

83

8
C

23
3) Assume suitable data, if necessary.

ic-
16

tat
Q1) a) State and prove De’Morgan’s sum & product theorem with the help of
8.2

3s
truth table. [6]
.24

3:1
91
b) Design and implement full adder circuit. Write the expressions for sum
49

9:5
and carry. [6]
30
90

c) i) Convert (105.15)10 to binary

01
01

ii) Convert (4057.068)8 to decimal

2/2
GP

iii) Convert (1101101110.1001101)2 to hexadecimal

1/1
CE

iv) Find 1’s complement of 111001

83

8
23
.23

v) Find (11100-01111)2 using two’s complement.

ic-
16

[5]
tat
8.2

3s

OR
.24

3:1

Q2) a) What is flipflop? Draw & Explain the working of clocked SR Flip flop.
91
49

9:5

[6]
30
90

b) Compare microprocessor and microcontroller. [6]

01
01

c) Design and Implement half adder circuit. [5]

2/2
GP
1/1
CE

Q3) a) Draw and Explain the block diagram of digital multimeter. [6]
83

b) Explain the block diagram of AC/DC power supply. [6]

.23
16

c) Explain the working of function generator with neat diagram. [6]

8.2

OR
.24

P.T.O.
49
Q4) a) Draw and explain the block diagram of digital storage oscilloscope. [6]

8
23
b) Explain DC ammeter. Explain, how the range of DC ammeter can be

ic-
extended. Determine expression for shunt resistance. [6]

tat
3s
c) Explain construction and working of an autotransformer. [6]

3:1
01 91
9:5
Q5) a) Explain the construction and working of LVDT. [6]

0
90
b) 1/1 13
Write a short note on two temperature transducers / sensors. [6]
0
2/2
.23 GP

c) Explain the construction and working of load cell. Give one application.
[5]
E
83

8
OR
C

23
ic-
Q6) a) Explain the working of biosensors with the help of neat block diagram
16

tat
Give one application. [6]
8.2

3s
b) Draw and explain the working of accelerometer. [6]
.24

3:1
91
49

c) An RTD is inserted in an oven is having a resistance 160Ω. At 0ºC

9:5
resistance is 100 Ω and it’s resistance temperature coefficient is 0.00392.
30
90

Determine the change in temperature. [5]

01
01
2/2
GP
1/1

Q7) a) Explain the block diagram of electronic communication system. [6]

CE
83

8
b) Distinguish between co-axial cable and optical fiber cable. [6]

23
.23

c) Describe the block diagram of AM-transmitter.

ic-[6]
16

tat
8.2

OR
3s
.24

3:1

Q8) a) Draw and explain electromagnetic spectrum along with their applications.
91
49

9:5

[6]
30
90

b) Draw and explain the block diagram of FM receiver. [6]

01
01

c) Diagramatically explain GSM architecture. [6]

2/2
GP
1/1
CE
83
.23


16
8.2
.24

[5667]-1006 2
49
Total No. of Questions : 8] SEAT No. :

8
23
P3922 [Total No. of Pages : 2

ic-
[6001]-4006

tat
5s
F.E.

8:3
BASIC ELECTRONICS ENGINEERING

02 91
(2019 Pattern) (Semester - II) (104010)

0:3
0
31
Time : 2½ Hours]
1/0 13 [Max. Marks : 70
0
Instructions to the candidates:
7/2
.23 GP

1) Attempt Q.No.1 or Q.No.2, Q.No.3 or Q.No.4, Q.No.5 or Q.No.6, Q.No.7 or Q.No.8.

2) Neat diagrams must be drawn wherever necessary.
E
83

3) Figures to the right indicate full marks.

8
C

23
4) Assume suitable data, if necessary.

ic-
16

tat
8.2

5s
Q1) a) i) Convert:
.24

8:3
1) (372.26)8 to Hexadecimal
91
49

0:3
2) (5F1.6C)16 to Octal
30
31

3) (9D.33)16 to Decimal
01
02

ii) Solve:
7/2

1) (110011-111001) using 2s compliment method

GP
1/0

2) (1101×110)
CE
83

3) (111011.11+100100.01

8
23
.23

[6]
ic-
16

tat
b) Define Universal Logic Gates. Why they known as Universal Logic Gates?
8.2

5s

[6]
.24

8:3
91

c) Draw block diagram of Microprocessor and explain function of each

49

0:3
30

block. [6]
31
01
02

OR
7/2
GP

Q2) a) With the help of truth table, explain operation of AND, OR, EX-OR
1/0
CE

gates. [6]
83

b) State and prove De-Morgan’s Theorems. [6]

.23

c) Explain in detail the working of a full adder with the help of a truth table
16
8.2

and give its sum and carry. [6]

.24

P.T.O.
49
 8
Q3) a) Explain digital multimeter with block diagram. [6]

23
b) Explain Power Scope with block diagram. [5]

ic-
tat
c) Explain how to convert Galvanometer to Analog Voltmeter and how to

5s
use it as multi-range Voltmeter? [6]

8:3
02 91
0:3
OR

0
31
Q4) a) 1/0 13
Explain function Generator with block diagram. [6]
0
b) Explain Auto Transformer and list its applications. [5]
7/2
.23 GP

c) Explain how to convert Galvanometer to Analog Ammeter and how to

use it as multi-range Ammeter? [6]
E
83

8
C

23
ic-
Q5) a) Explain selection criteria of transducers. [6]
16

tat
b) Draw construction of LVDT and explain its operation. Write its
8.2

5s
advantages, disadvantages and applications. [6]
.24

8:3
c) Explain working principle of strain gauge. Explain load cell. [5]
91
49

0:3
30
31

OR
01
02

Q6) a) Differentiate between active and passive sensors. [6]

7/2
GP

b) Explain RTD with its construction, working, advantages, disadvantages

1/0

and applications. [6]

CE
83

8
c) Explain operation of Biosensor with one application. [5]

23
.23

ic-
16

tat
Q7) a) With the help of block diagram, explain basic communication system.[6]
8.2

5s

b) Explain IEEE electromagnetic frequency spectrum and state allotment of

.24

8:3

frequency bands for different applications. [6]

91
49

0:3

c) Draw diagram explain GSM architecture. [6]

30
31

OR
01
02
7/2
GP

Q8) a) Explain different types of cables used in electronic communication. [6]

1/0

b) Draw block diagram of FM Transmitter and explain. [6]

CE
83

c) Explain cellular communication system. [6]

.23
16

 
8.2
.24

[6001]-4006 2
49
Total No. of Questions : 4] SEAT No. :

8
23
P-5372 [Total No. of Pages : 1

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[6185]-55

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7s
F.E. (Insem.)

9:4
BASIC ELECTRONICS ENGINEERING

02 91
3:3
(2019 Pattern) (Semester - I) (104010)

0
31
2/1 13
0
Time : 1 Hour] 0/2 [Max. Marks : 30
.23 GP

Instructions to the candidates:

1) Attempt Q.1 or Q.2, Q.3 or Q.4.
E
81

8
2) Figures to the right indicate full marks.
C

23
ic-
16

tat
Q1) a) Compare half wave rectifier and full wave rectifier. [5]
8.2

7s
b) Explain the construction and working principle of LED. [5]
.24

9:4
91
c) Explain impact of Electronics on society and industry. [5]
49

3:3
30
31

OR
01
02

Q2) a) Compare active and passive components. [5]

0/2
GP

b) Explain the operation of bridge rectifier circuit with diagram. [5]

2/1
CE

c) Explain the construction and working of photodiode. [5]

81

8
23
.23

ic-
16

tat
Q3) a) Draw an explain input and output characteristics of BJT in common
8.2

7s

emitter configuration, show different regions of operation. [5]

.24

9:4

b) Compare BJT and MOSFET. [5]

91
49

3:3
30

c) Draw and explain Internal Block diagram of OP-AMP. [5]

31
01

OR
02
0/2
GP

Q4) a) Explain with suitable diagram operation of NPN transistor [5]

2/1

b) Explain construction and operation of n-channel E-MOSFET. [5]

CE
81

c) State and explain practical parameters of OP-AMP. [5]

.23
16
8.2


.24
49
Total No. of Questions : 4] SEAT No. :

8
23
PC378 [Total No. of Pages : 1

ic-
[6358]-109

tat
F.E. (Insem)

5s
BASIC ELECTRONICS ENGINEERING

4:2
(2019 Pattern) (Semester - I) (104010)

02 91
3:4
Time : 1 Hour] [Max. Marks : 30

0
41
0/1 13
Instructions to the candidates:
1) Answer Q.1 or Q.2, Q.3 or Q.4.
0
2) Assume suitable data if necessary.
0/2
.23 GP
E

Q1) a) Explain forward biasing of P-N Junction diode with its V - I characteristics.
81

8
C

23
[5]

ic-
b) Compare half wave, center tapped transformer full wave rectifier and
16

tat
Bridge full wave rectifier. [5]
8.2

5s
c) Draw and explain voltage regulator circuit using zener diode. [5]
.24

4:2
OR
91
49

3:4
Q2) a) What is depletion region? Explain the effect of forward biasing and reverse
30

biasing of P-N Junction diode on depletion region. [5]

41

b) For Bridge full wave rectifier, applied input voltage is 10Sin wt, calculate
01
02

average output voltage, RMS voltage and PIV rating of diode used. [5]
0/2
GP

c) Explain principle of operation and construction of photodiode. List its

0/1

applications. [5]
CE
81

8
23
.23

Q3) a) Explain BJT as an amplifier in common Emitter configuration. [5]

ic-
16

b) Explain construction and operation of N-channel EMOSFET. [5]

tat
8.2

5s

c) For an inverting amplifier using Op-Amp if Rf = 10k, R1 = 1k and

.24

Vcc = ± 15V calculate ‘Vo’ for Vin = 100 mv. [5]

4:2
91

Comment on the phase relation between input and output voltage.

49

3:4

OR
30
41

Q4) a) Explain regions of operation of transistor with respect to biasing

01
02

conditions. For BJT, if JB = 10 A and IE = 1mA [5]

0/2

Calculate value of Ic and (Beta).

GP
0/1

b) Compare BJT and MOSFET. [5]

CE
81

c) Draw and explain Op-amp as inverting amplifier. Write the expression

for voltage gain. [5]
.23
16
8.2

  
.24
49

[6358]-109 1