INTRODUCTION Microprocessors, also called computer chips, are made using a process called lithography.

Specifically, deep-ultraviolet lithography is used to make the current breed of microchips and was most likely used to make the chip that is inside your computer. Lithography is akin to photography in that it uses light to transfer images onto a substrate. Silicon is the traditional substrate used in chip making. To create the integrated circuit design that's on a microprocessor, light is directed onto a mask. A mask is like a stencil of the circuit pattern. The light shines through the mask and then through a series of optical lenses that shrink the image down. This small image is then projected onto a silicon, or semiconductor, wafer. The wafer is covered with a light-sensitive, liquid plastic called photoresist. The mask is placed over the wafer, and when light shines through the mask and hits the silicon wafer, it hardens the photoresist that isn't covered by the mask. The photoresist that is not exposed to light remains somewhat gooey and is chemically washed away, leaving only the hardened photoresist and exposed silicon wafer. The key to creating more powerful microprocessors is the size of the light's wavelength. The shorter the wavelength, the more transistors can be etched onto the silicon wafer. More transistors equal a more powerful, faster microprocessor. Deep-ultraviolet lithography uses a wavelength of 240 nanometers As chipmakers reduce to smaller wavelengths, they will need a new chip making technology. The problem posed by using deep-ultraviolet lithography is that as the light's wavelengths get smaller, the light gets absorbed by the glass lenses that are intended to focus it. The result is that the light doesn't make it to the silicon, so no circuit pattern is created on the wafer. This is where EUVL(Extreme Ultraviolet Lithogrphy) will take over. In EUVL, glass lenses will be replaced by mirrors to focus light and thus EUV lithography can make use of smaller wave lengths. Hence more and more transistors can be packed into the chip. The result is that using EUV lithography, we can make chips that are upto 100 times faster than todays chips with similar increase in storage capacity.

EXTREME ULTRAVIOLET LITHOGRAPHY

2.1 WHY EUVL? In order to keep pace with the demand for the printing of ever smaller features, lithography tool manufacturers have found it necessary to gradually reduce the wavelength of the light used for imaging and to design imaging systems with ever larger numerical apertures. The reasons for these changes can be understood from the following equations that describe two of the most fundamental characteristics of an imaging system: its resolution (RES) and depth of focus (DOF). These equations are usually expressed as RES = k1 / NA (1a) and DOF = k2 / (NA) , (1b) where is the wavelength of the radiation used to carry out the imaging, and NA is the numerical aperture of the imaging system (or camera). These equations show that better resolution can be achieved by reducing and increasing NA. The penalty for doing this, however, is that the DOF is decreased. Until recently, the DOF used in manufacturing exceeded 0.5 um, which provided for sufficient process control. The case k1 = k2 = corresponds to the usual definition of diffractionlimited imaging. In practice, however, the acceptable values for k1 and k2 are determined experimentally and are those values which yield the desired control of critical dimensions (CD's) within a tolerable process window. Camera performance has a major impact on determining these values; other factors that have nothing to do with the camera also play a role. Such factors include the contrast of the resist being used and the characteristics of any etching processes used. Historically, values for k and k greater than 0.6
1 2 2

have been used comfortably in high-volume manufacture. Recently, however, it has been necessary to extend imaging technologies to ever better resolution by using smaller values for k1 and k2 and by accepting the need for tighter process control. This scenario is schematically diagrammed in Figure 2.1, where the values for k1 and DOF associated with lithography using light at 248 nm and 193 nm to print past, present, and future CD's

2.3 HERE'S HOW EUVL WORKS 1. A laser is directed at a jet of xenon gas. When the laser hits the xenon gas, it heats the gas up and creates a plasma. 2. Once the plasma is created, electrons begin to come off of it and it radiates light at 13 nanometers, which is too short for the human eye to see. 3. The light travels into a condenser, which gathers in the light so that it is directed onto the mask.
4. A representation of one level of a computer chip is patterned onto a mirror

by applying an absorber to some parts of the mirror but not to others. This creates the mask. 5. The pattern on the mask is reflected onto a series of four to six curved mirrors, reducing the size of the image and focusing the image onto the silicon wafer. Each mirror bends the light slightly to form the image that will be transferred onto the wafer. This is just like how the lenses in your camera bend light to form an image on film. EUVL ADVANTAGES 1. EUVL leverages much of the learning and supplier infrastructure established for conventional lithography. 2. EUVL technology achieves good depth of focus and linearity for both dense and isolated lines with low NA systems without OPC. 3. The robust4X masks are patterned using standard mask writing and repair tools and similar inspection methods can be used as for conventional optical masks. 4. The low thermal expansion substrates provide good critical dimension control and image placement. 5. Experiments have shown that existing DUV can be extended for use with EUV.

CONCLUSION Successful implementation of EUVL would enable projection photolithography to remain the semiconductor industry's patterning technology of choice for years to come. However, much work remains to be done in order to determine whether or not EUVL will ever be ready for the production line. Furthermore, the time scale during which EUVL, and in fact any NGL technology, has to prove itself is somewhat uncertain. Several years ago, it was assumed that an NGL would be needed by around 2006 -07 in order to implement the 0.1 um generation of chips. Currently, industry consensus is that 193 nm lithography will have to do the job, even though it will be difficult to do so. There has recently emerged talk of using light at 157 nm to push the current optical technology even further, which would further postpone the entry point for an NGL technology. It thus becomes crucial for any potential NGL to be able to address the printing of feature sizes of 50 nm and smaller! EUVL does have that capability. The battle to develop the technology that will become the successor to 193 nm lithography is heating up, and it should be interesting to watch!