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Fermi-Dirac Function and Fermi Level

The Fermi function f(E) specifies how many of the existing states at the energy
E will be filled with electrons. The function f(E) specifies, under equilibrium
conditions, the probability that an available state at an energy E will be occupied
by an electron.
It is a probability distribution function.

EF = Fermi energy or Fermi level

k = Boltzmann constant = 1.38  10−23 J/K
= 8.6  10−5 eV/K
T = absolute temperature in K
 Fermi-Dirac distribution: Consider T → 0 K

For E > EF :

1 E
f ( E  EF ) = = 0
1 + exp (+)

EF
For E < EF :

1
f ( E  EF ) = =1
1 + exp (−)
0 1 f(E)
 Fermi-Dirac distribution: Consider T > 0 K

If E = EF then f(EF) = ½
If E  EF + 3kT then  E − EF 
exp    1
 kT 
 − ( E − EF ) 
Thus the following approximation is valid: f ( E ) = exp  
 kT 
i.e., most states at energies 3kT above EF are empty.
If
E  EF − 3kT
then  E − EF 
exp    1
 kT 
Thus the following approximation is valid:  E − EF 
f ( E ) = 1 − exp  
So, 1 −f(E) = Probability that a state is empty, decays to zero.  kT 
So, most states will be filled.
kT (at 300 K) = 0.025eV, Eg(Si) = 1.1eV, so 3kT is very small in comparison.
Temperature dependence of Fermi-Dirac distribution
Extrinsic Semiconductor
Extrinsic Semiconductor
Extrinsic Semiconductor
The number density, i.e., the number of The number density, i.e., the number of
electrons available for conduction in CB is holes available for conduction in VB is

3/ 2
 2 m*p kT 
3/ 2
 2 mn*kT  EC − EF EF − EV
n = 2  exp − ( ) p = 2  exp − ( )
2  h2 
 h  kT   kT
E − EF E − Ei E −E E −E
n = NC exp− ( C ) n = ni exp( F ) p = NV exp− ( F V ) p = ni exp( i F )
kT kT kT kT
  EG 
3
 i = ni e( e +  h ) = C  e( e +  h )  T 2
exp − 
 2kT 

• σi depends strongly on the

temperature and the charge
carrier densities
• extrinsic conductivity
depends additionaly on
excitation of dopants into the
conduction band.
 Carrier Mobility

Macroscopic understanding Microscopic understanding

Vd q
= = *
E m
In a perfect Crystal
me*  mh* in general
 =0
me* ; n − type
 →
mh* ; p − type
It is a superconductor
• A perfect crystal:
→ a perfect periodicity
→ the potential seen by a carrier is completely periodic.
→ the crystal has no resistance to current flow and behaves as a
superconductor. The perfect periodic potential does not impede the
movement of the charge carriers.
• The presence of impurities, interstitials, subtitionals, temperature
→ creates a resistance to current flow.

The mobility has two component

Lattice interaction component Impurity interaction component

 Mobility variation with temperature

 

T T

High temperature Low temperature

ln(  )
1 1 1
= + Peak depends on
T L I L the density of
I impurities

This equation is called as ln( T )

Mattheisen’s rule.
Mobility variation with temperature
 Mobility variation with temperature

At high temperature
(the lattice warms up)
L component becomes
significant.

L decreases when temperature increases.

3 3
− −
 L = C1  T 2
T 2 C1 is a constant.

It is called as a T −1.5 power law.

→ Carriers are more likely scattered by the lattice atoms.

 Mobility variation with temperature

At low temperatures I component is significant.

I decreases when temperature decreases.

3
 I = C2  T 2
C2 is a constant.
→ Carriers are more likely scattered by ionized impurities.
• The peak of the mobility curve depends on the number density of ionized
impurities.
• Highly doped samples will therefore cause more scattering, and have a lower
mobility, than low doped samples.
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Bringing p- and n-Materials Together
• Large concentration gradient at
boundary
• Gradient causes electrons to diffuse
from n to p and holes to diffuse from p
to n
• p-type material is negatively charged
with fixed acceptor ions in the vicinity
of pn-boundary.
• n-type material is positively charged
with fixed donor ions near the junction
• Electric field across the boundary
directed from n to p-region
• Counteracts the diffusion of holes and
electrons as it causes electrons to drift
from p to n and holes to drift from n to p
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 Depletion Capacitance
• When a reverse bias is applied to p-n junction diode, the
depletion region width, W, increases. This cause an increase in
the number of the uncovered space charge in depletion region.

• Whereas when a forward bias is applied depletion region width

of the p-n junction diode decreases so the amount of the
uncovered space charge decreases as well.

• So the p-n junction diode behaves as a device in which the

amount of charge in depletion region depends on the voltage
across the device. So it looks like a capacitor with a
capacitance.
130
 Charge stored in
coloumbs
Q
C=
Capacitance in V
farads Voltage across the
capacitor in volts

❖ Capacitance of a diode varies with W (Depletion Region width)

❖ W (DR width varies width applied voltage V )

131
Capacitance per unit area of a diode ;
 F
CDEP = Si
W cm 2
For one-sided abrupt junction; e.g. N A  N D  xn  W  xn
N A x p = N D xn

 Si  Si 2 SiVbi
CDEP =   xn = for N A  N D
W xn qN D
The application of reverse bias ;
 Si q Si N D
CDEP = =
2 Si (Vbi + VR ) 2(Vbi + VR )
qN D

132
If one makes C - V measurements and draw 1/C 2
against the voltage VR ; obtain built-in voltage and
doping density of low-doped side of the diode from
the intercept and slope.

1 2(Vbi + VR )
=
C 2
q Si N D

2 kT N AND
slope = Vbi = ln( )
q Si N D q 2
ni

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