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3 Diode Circuit Approximate Analysis
A significant simplification of the analysis of a diode-circuit is obtained
by using the approximate analysis method, where each diode, in the circuit, is replaced by its approximate model which can be obtained by piecewise linearzing the diode-characteristic as we shall see in the following section.
3-1 Diode Model for Large Signals
In case of large source signals, it is usual to divide the whole characteristic into two pieces and to approximate each piece to a straight line and from the approximated characteristic we can obtain the diode model as follows: 14
Characteristic and Symbol of an Actual Diode Model for Large Signals
Fig. 3-1 Thus, the approximate model for large signals consists of an ideal diode
in series with a voltage source
V f , called "Turn on voltage" in series with a
resistance Rf called "Large signal forward resistance". 3-2 Diode Model for Small Signals Suppose that a semiconductor diode is present in a circuit operating with – DC- and ac- sources. In this case the Q-point will move, during the small signal variation, along a small portion of the characteristic about the Q- point (between point a and point b) where the distance between these two points is almost a straight line as shown below.
Thus, the diode can be considered, for small signals as a resistance d
r which is usually called a "dynamic resistance" and can be approximated by:
Δv D rd≈ | Δi D atQ We can see that the value of r d is depending on the diode - DC-current I DQ . and may be considered as the small signal model of the diode at a certain Q-point.
Symbol and Small Signal Model of a Diode
Fig.3-2 15
3-3 Dynamic Resistance from Diode Equation
The dynamic resistance may be obtained by taking the derivative of the theoretical diode equation as follows:
v D / ηV T iD = I o( e −1 ) →
di D I v / ηV 1 v / ηV = o e D T= (I o e D T −I o+ I o) dv D ηV T ηV T →
di D 1 i = ( i D+ I o )≈ D i D >> I o → dv D ηV T ηV T →
dv D ηV T ηV T rd = |atQ ≈ |i =I ≈ di D i D D DQ I DQ
Example 3-1 For the following circuit, find i D ( t ) and v L ( t ) using the
approximate analysis-method if V f ≈0 .7 , R f ≈10 , η≈2 for the diode , and V dc =1 .5 , r s=20 , R1 =100 , R L=200 , C=100 μF , v ac =0 .1 sin 10 4 t .
DC-Response:
V dc −V f 1 . 5−0 . 7 I DQ = = =6 . 15 r s+ R f + R 1 20+10+100 mA , V LQ=0 16
Small Signal Response:
ηV T 2∗25 m 1 1 rd = = =8 .13 = 4 =1 I DQ 6 .15 m , ωC 10 ∗100∗10−6 1 R Since ωC << L , the capacitor can be considered as a short circuit for ac so that the small signal equivalent may be simplified as follows:
v ac 0 . 1sin 10 4 t id= = =1 . 05 mA sin 104 t r s +r d +( R 1 // R L ) 20+8 . 13+( 100 // 200 )
v l=(R 1 // R L )∗i d =(100 // 200 )∗1 .05 mA sin 10 4 t=70 mV sin10 4 t
Complete Response: i D =I DQ +i d = 6 . 15 mA+1. 05 mA sin 10 4 t v L=V LQ + v l = 70 mV sin 10 4 t
3-4 Problems 3-4-1 Use the approximate analysis method to find v D ( t ) in the circuit of Fig. 3.4.1, if the diode has the same characteristic as that of the diode given in problem 2-4-1.
Fig. 3-4-1
3-4-2 Use the approximate analysis method to find i D ( t ) in the circuit of
17
Fig.3.4.2, if the diode has the same characteristic as that of the
diode given in problem 2-4-2.
Fig. 3-4-2
3-4-3 Use the approximate analysis method to find i D ( t ) and v L ( t ) in
the circuit of Fig. 3.4.3, if the diode has the same characteristic as that of the diode given in problem 2-4-1,
Fig. 3-4-3
3-4-4 The characteristic of the diode, in the circuit of Fig. 3-4-4, is
represented by the following approximate relationship:
iD 2∗10−2∗v 2 v D ≥0 ¿ D , for iD ¿ 0 , for vD < 0 find
a) the diode - DC-current
I DQ and diode - DC-voltage V DQ ?. b) the value of the diode - dynamic resistance d at the above r Q- point-values which can be obtained as follows:
