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Using highly accurate FP-LAPW method with GGA approximation structural, elec-
tronic and elastic properties of cubic CaTiO3 have been calculated from 0-120 GPa
range of pressure. It is observed that lattice constant, bond length and anisotropy
factor decrease with increase in pressure. Also the brittle nature and indirect band-gap
of the compound become ductile and direct band-gap respectively at 120 GPa. Moduli
of elasticity, density of the material, Debye temperature and wave elastic wave veloc-
ities increase with increase in pressure. Spin dependent DOS’s plots show invariant
anti-ferromagnetic nature of the compound under pressure. Our calculated results are
in good agreement with available theoretical and experimental results. C 2015 Au-
thor(s). All article content, except where otherwise noted, is licensed under a Creative
Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4926437]
I. INTRODUCTION
a Email: saadigi@hotmail.com
are difficult to characterize. A first-principle calculation therefore has played an important role in
theoretically understanding the properties of CTO under pressure.
To our best knowledge, there are not much data available on properties of cubic CTO under
high pressure up to 120 GPa to understand the stable structural, elastic and electronic properties.
Therefore more precise calculations under pressure need to be performed to understand the structure
rather than studying to higher temperatures.
A. Structural properties
In structural properties of CTO the calculated lattice constants from (SCF) Self Consistent
Field cycles for cubic CTO at ambient pressure is 3.89 Å and at 120 GPa is 3.49 Å. The calculated
lattice parameter at ambient pressure is 1.7 % larger than 3.82 Å that reported in Ref. 32. To study
the structural stability of compound at ambient and at applied pressure, we obtained bulk modulus
(B), derivative of bulk modulus (B′), minimum volume (V0) and the ground state energy (E0) of unit
cell through volume optimizations as shown in Fig. 1. In volume optimization process ground state
077111-3 Tariq et al. AIP Advances 5, 077111 (2015)
energy and minimum volume shows the compound stability. We concluded from our optimizations
that CTO remain in stable cubic phase even at such extreme pressure conditions. This shows the
ability of compound to sustain pressure without transforming phase. This stability is also explained
by internal strain factor discussed in section III C.
From Table I, one can see that increase in pressure causes decrease in lattice constant, minimum
volume and the ground state energy. Variation in bond lengths under normal pressure for Ca–Ti, Ca-O
B. Electronic properties
The band structure at different pressure is depicted in Fig. 2 in which Fermi level is set at 0 eV.
It is seen that at zero pressure the top of valence band maxima (VBM) is located at R symmetry
point, while the bottom of the conduction band minima (CBM) is located at Γ symmetry point.
Hence, CTO at ambient pressure is an indirect band-gap semiconductor. Interestingly, when we
increase pressure upto 120 GPa, the top of the VBM at Γ symmetry shifts towards the Fermi level
due to formation of week covalent bond between Ca and O atoms. While M and R symmetry points
move away from the Fermi level due to breaking of week covalent bond between Ca and Ti atoms,
transforming the material phase to a direct band-gap (Γ – Γ) at 120 GPa. The obtained band-gap
values Eg under ambient and at applied pressure of 120 GPa are 2.003 eV and 2.535 eV respectively
as shown in Fig. 2.
Charge density plot of CTO along plane direction (110) has revealed the nature of the bond
between Ca, Ti and O atoms as shown in Fig. 3. Ca-Ti bond is purely ionic for all pressure values
as the atomic spheres are spherical in shape. But Ti-O bond has changed from nearly spherical to
Pressure
FIG. 2. Band structure of CaTiO3 (a) 0 GPa (indirect R- Γ) (b) 120 GPa (Direct Γ − Γ).
oval shape i.e. from week ionic, under ambient pressure to strong covalent, under applied pressure
of 120 GPa.
FIG. 3. Charge density plot along (110) plane (a) 0 GPa (b) 120 GPa. Where 1, 2 and 3 represents Ca, Ti and O atoms
respectively.
077111-5 Tariq et al. AIP Advances 5, 077111 (2015)
FIG. 4. TDOS’s of CTO for spin up and spin down states at (a) 120 GPa (b) 0 GPa.
FIG. 5. Total DOS of CaTiO3 (a) 120 GPa (e) 0 GPa. Partial DOS of Calcium (Ca (b) 120 GPa (f) 0 GPa), Titanium (Ti (c)
120 GPa (g) 0 GPa) and Oxygen (O (d) 120 GPa (h) 0 GPa).
Pressure
Where vl and vt are the longitudinal and transverse wave velocities respectively which are defined
by using Navier’s equation42
3B + 4G
vl = (10)
3ρ
G
vt = (11)
ρ
Unfortunately there is no detailed experimental or theoretical data available in the literature for the
structural and elasto-electronic properties of CTO under high pressure. Our calculated structural
and electronic properties under ambient pressure have matched well with the available results up
to reasonable pressure ranges. Therefore one step ahead from post findings, our calculations under
high pressure can be considered as a theoretical prediction of structural and elasto-electronic prop-
erties for cubic CTO. Thus cubic CTO can be used as a potential candidate for some novel device
fabrications for high pressure applications in semiconductor industry.
IV. CONCLUSIONS
The structural, electronic and elastic properties of cubic CTO at 0 GPa and at 120 GPa have
been studied by using FP-LAPW method with GGA functional. The structural parameters, the
lattice constant and the bond length decrease as we move from 0-120 GPa. We also observed
transformation of indirect band-gap to direct band-gap semiconductor with increase in pressure.
system Can+1TinO3n+1−δ (n = 2, 3, and ∞),” J. Solid State Chem. 101, 77-86 (1992).
12 V.V Lemanov, A.V. Sotnikov, E. Psminova, M. Weihnacht, and R. Kunze, “Perovskite CaTiO as an incipient ferroelectric,”
3
Solid State Communication 110, 611-614 (1999).
13 K. Ueda et al., “Vacuum ultraviolet reflectance and electron energy loss spectra of CaTiO ,” J. Phys.: Condense Matter 10,
3
3669 (1998).
14 K. Ueda, H. Yanagi, and H. Kawazoe, “Study on electronic structure of CaTiO by spectroscopic measurements and energy
3
band calculations,” J. Phys.: Condense Matter 11, 3535 (1999).
15 C.J. Howard and H.T. Stokes, “Group-Theoretical Analysis of Octahedral Tilting in Perovskites,” Acta. Cryst. B 54, 782-789
(1998).
16 B.J. Kenndey, C.J. Howard, and B.C. Chakoumakos, “Phase transitions in perovskite at elevated temperatures powder
18 D. Ligny and P. Richet, “High-temperature heat capacity and thermal expansion of SrTiO3 and SrZrO3 perovskites,” Phys.
Rev. B 53, 3013-3022 (1996).
19 M. Yashima and M. Tanaka, “Performance of a new furnace for high-resolution synchrotron powder diffraction up to 1900
K: application to determine electron density distribution of the cubic CaTiO3 perovskite at 1674 K,” J. Appl. Cryst. 37,
786-790 (2004).
20 Y. X. Wang, M. Arai, T. Sasaki, and C. L. Wang, “First-principles study of the (001) surface of cubic CaTiO3,” Phys. Rev.
6671 (1992).
28 D.J. Singh, Plane Waves Pseudo-Potentials and the LAPW Method (Kluwer Academic, Dordrecht, 1994).
29 John P. Perdew, Kieron Burke, and Matthias Ernzerhof, “Generalized Gradient Approximation Made Simple,” Phys. Rev.
Austria, 1999).
32 A.M. Moustafa, I.S Ahmed Farag, and L.M. Salah, “Structural Characterization of Substituted Calcium Titanate Compounds
120-123 (2008).
41 Y.-J. Hao, X.-R. Chen, H.-L. Cui, and Y.-L. Bai, “First-principles calculations of elastic constants of c-BN,” Physica B:
1973).