Detectors and Focal Plane Assembly: Christine Allen Naresh Das Mike Amato
Detectors and Focal Plane Assembly: Christine Allen Naresh Das Mike Amato
Detectors and Focal Plane Assembly: Christine Allen Naresh Das Mike Amato
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Outline
Focal Plane Assembly (FPA) Requirements Design Approach Design Description
Detector Overview Silicon Bridge overview
FPA Electrical Interfaces JFET Design Description- Naresh Das Detector Mechanical Design Description- Mike Amato Test/Verification Plan Development Plan
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FPA Team
Member Christine Allen Naresh Das Mike Amato Sachi Babu Tom Hartman Quanmin Su Dave Franz Wayne Smith Ernie Buchanan Tim Powers Richard McClanahan Frank Peters Carlos Munroy Dorothy Talley Affiliation Detector Systems Branch/ Code 553 JFETs & Calibration Sources Code 553/Ratheon STX Detector Mechanical Electromechanical Systems Branch/Code 544 Ceramic Boards and High Code 553/Ball Aerospace Density Connectors FPA Mechanical & JFET Detector Systems Branch Mechanical Detector Development Code 553/Ratheon STX Bridge Development Code 553/Ratheon STX Cold Electronics Interfaces Code 553/Ratheon STX Electronics/Detector Testing Code 685/Ratheon STX Electronics/Detector Testing Code 685/Ratheon STX Fabrication Detector Systems Branch Assembly Detector Systems Branch Fabrication Code 553/Ratheon STX Fabrication Code 553/Ratheon STX Description Detector and FPA, Lead
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FPA Requirements
Format: 12x32 array of 1 mm square, close-packed pixels Detectors must be sensitive enough to achieve background-limited performance For all filter passbands (60m, 100m, and 200m defined by Yerkes) Performance must not be limited by microphonics, magnetic pickup from telescope torque motors, or any other extraneous noise source other than sky noise Must be able to reproduce, predict, or calibrate detector gains over the expected range of operating conditions Calibration time must be << total observing time (Instrument Requirement)
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CTE optimized, Kevlar suspended detector packaging Load resistors Polysilicon microfilaments (Calibration sources)
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Design Description-Detectors
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Design Description-Detectors
Ion-implanted, temperature sensitive resistor (thermistor)
Boron-compensated Phosphorous with temperature dependence:
To R(T ) = Ro exp T
Target R(0.2K)=30-60M
Weak thermal path to ADR bath, anisotropically etched silicon support legs Pop-up configuration to allow close-packing of detectors (filling-factor ~ 98%) Detector pitch (c-c spacing)
1 mm pitch +/- 0.004 mm (4 m), x-direction 1mm pitch +/- 0.025 mm (baseline), y-direction, < 0.010 mm (goal)
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Folded Array
32-element detector chip, attached to cryogenic Buss-bar. Note the asymmetry of the detector chips frame which will aid in stacking of 2-D arrays.
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Close-up shows details of leg design allowing the silicon to be bent 90 during folding
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Design Description-Detectors
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Design Description-Loads
Ion implanted
Same implant dose as detector, but different length-width ratio Target is 5x higher resistance than detector
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2 RL
32 VB(Load)
Gate
Rd
Signal (VOUT)
Ref.
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Design Description Silicon Bridges Silicon bridge chips for low-thermalconductance, close-packed electrical connections. Used in two places for HAWC.
Detector Bridges
65 bridges, minimum, required per 32-element array Spares for redundant load-bias lines and frame-sensors (as required)
JFET Bridges
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Secondary path: Replace single-crystal silicon with a non-crystalline substrate to make it ultracompliant. Polyimide is under consideration.
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Bridges
Temporary Frame
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Close-up of a single S-curve seen at an angle of 70. The curves provide strain relief during thermal cycling.
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JFETs
Low-Noise Silicon Junction Field Effect Transistors
GSFC supplied Housed within a 4.2K enclosure, isolated from bath and shielded to prevent light leaks to detector stage Silicon bridges to provide electrical connection for JFETs
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Design Description-Connectors
Connectors
Provide a signal & reference lead from each PUD to JFET with goal to:
Minimize loop area Minimize the effect of vibration in a magnetic field (microphonics) Minimize distance from PUD to JFET Minimize cross-talk
Provide a common detector bias lead for each linear array of 32 elements
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Design Description-Sources
Calibration
Polysilicon microfilaments as black-body calibration sources
Provides a calibration reference internal to the instrument GSFC Supplied
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Temperature Gradients
.2 K 4.2 K 77 K
Detector Motherboard JFET Motherboard Silicon Bridge JFET Silicon Bridge Dewar wiring
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Symmetric about center line (Right Hand Side is Mirror image of Left Hand Side)
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Photos show Hughes connectors having half of the pins required for each HAWC connector
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Heat shielding
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JFET Motherboard
JFETs
JFET Platform
Heat shield
Bridge chip
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Outline
JFET on Board Device Specification Bulk Silicon Vs SOI JFET Fabrication I-V characteristics Noise performance
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Polysilicon IR Sources Design Layout Fabrication SEM of Poly Source Resistances Performance
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Polysilicon IR Sources
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Design Specifications
(I) For Vds=1.2 V and Id=25 A, Vgs= -1.0 to 1.5 V (ii) gm > 0.2 mS (iii) Ig < 20 pA @ RT (iv) Gate-source breakdown < -12 V (v) Noise voltage at 77 K Frequency (Hz) 1 Noise (nV/Hz1/2) 75 20 20 100 8 1000 7
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Design Specifications
S
n-epi
D
n-epi
Bulk Si-JFET
SOI JFET
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JFET Fabrication
1) Oxidation 2) Grove etching 3) Boron Diffusion 4) Phosphorous diffusion 5) Drive in 6) Contact opening 7) Metalization 8) LTO deposition Six masks process 89
Device Characteristics
gm at RT is 2 mS Vtoff at RT is -1.1 V gm at 77 K is 4 mS Vtoff at 77 K is -.81 V
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Noise Performance
Noise voltage for both bulk Si and SOI JFET at 77K is similar Noise is measured with source follower mode with Vd of 5.0 V
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Fabrication
Deposit 10 m LTO on Silicon substrate Polysilicon Deposition Low Dose Implant Heavy Dose Implant on leg area Metallization Oxide etching
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Poly sources
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Poly Resistance
Implant dose changes poly resistance
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Power Spectrum
Emission spectra in IR region Linear dependence of emissivity vs power
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Detectors
Detector mechanical design - 12X32 detector packaging requirements and goals. Keep the diameter of the upper part of the assembly under 4 inches (future applications). Detector row spacing of 1 mm (currently working with +/~ .025 mm (.001 in) mechanical tolerance goal). Detector plane alignment of better than 0.25 mm.
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Detectors
12X32 Detector mechanical requirements Fan-out board pad alignment of approximately .0025 in. between fan-out boards (to aid wire bonding to the back plane board). Keep thermal and load motions at the bridge chips to less than tested limit (~160 microns room temp) with positive margin. Current worst case (emergency landing) at temperature motion estimated at ~ 30 microns (.030 mm)
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Detectors
12X32 Detector mechanical requirements Keep conduction thermal losses between 200 mK stage and 4.2 K stage of detector assembly within assigned budget (~ less than 10 microwatts). Meet all of the above requirements after a worst case handling load, currently using ~ 60G static equivalent goal from JPL small part spec. Meeting this will also tend to meet ~ 3G operating load and 9G emergency landing load.
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Detectors
Detector mechanical design - A good way to describe the detector subassembly is to work from the inside out which is also how the system is, in a simplified sense, assembled.
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Detectors
The PUB chips are folded and epoxied to the buss bars.
PUB chip 32 pop up detectors
2.4 inches
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Detectors
The bridge chips are epoxied to a buss bar and a fan-out board. Bridge
chip 0.2 K 4K Fan-out board pad
3.8 in.
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Detectors
The upper and lower ceramic C parts are aligned and assembled into two half C subassemblies.
Spacer bracket Upper alumina C Lower alumina C
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Detectors
Six buss bar/bridge chip/fan-out board subassemblies are aligned and epoxied to each ceramic C subassembly. 0.2 K 4K 1 C subassembly 6 Bar-bridge chipfan-out board subassemblies
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Detectors
Two of the resulting subassemblies are aligned and bolted together to form a 12X32 array.
Two half detector subassemblies joined into one full detector array subassembly
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Detectors
The resulting 12X32 detector assembly is lowered into and bolted to the card-cage interface structure.
Full detector array subassembly from previous picture
Card cage interface structure (titanium, low CTE for commonly machined metals)
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Detectors
The six kevlar straps are epoxied to end hardware and tensioned into the claw with Belleville spring stacks on the top ends.
Strap tensioning nut Disc -spring stack Claw part
(titanium)
Kevlar straps
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Detectors
The claw is lowered over the detector array and bolted to the lower Cs.
Suspension claw with tensioned kevlar straps Full detector array in card cage structure
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Detectors
The cold plate is lowered, twisted into position with its hooks or grooves at the kevlar straps, and bolted or epoxied to the upper Cs.
Cold plate epoxied to kevlar straps at each strap set crossing point
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Detectors
The assembly is mounted to the top of the JFET box.
3 JFET electronics modules on card guides Not shown high density connectors are on both ends of the modules
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Detectors
The mother board is aligned to the fan out board tabs and attached to the card cage structure and the JFET box. Mother board (alumina) The pads on the tabs of the fan out boards are wire bonded to mother board tabs High density connector mates (not shown) Shim adjustable mechanical interface to instrument
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Detectors
The ADR heat strap is attached to the cold plate and the suspension brackets which suspended the detectors during the assembly are removed. Spacer
brackets removed ADR heat strap attach area
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Test/Verification Plan
Mechanical Model-Prototype assembly, to test and develop the focal plane assembly process (Code 553/544)
Vibration test of sub-assemblies
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Off-the-shelf technologies used where feasible CTE match of materials to Silicon Kevlar suspension of ADR detector stage for stiffness/thermal isolation Back-up detector assembly for flight Design for ease of instrument integration (Modular design) CSO detector assembly qualification (PUD FPA test-bed)
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Bridges
Baseline: Redesign IRAC chip/bridge (1st quarter 99) Secondary path: Bridge with improved compliance over single-crystal silicon
JFETs
Baseline: JFET on standard wafers with isolation etch (2nd quarter 99) Secondary path: Integrate discrete devices onto single JFET board by dicing between elements
Calibration Sources
Selection of optimum source design (2nd quarter 99) Fabrication and bonding to suitable carrier for integration into Yerkes package (2nd-3rd quarter 99)
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Detector Assembly Prototype (CTE matched Mechanical Model) (1st - 2nd quarter 99) Field Test (CSO unit) (June 99)
Fully functional 6x32 array
Flight Unit 1 (1st-3rd quarter 00, contingent on CSO) Flight Unit 2 (2nd-4th quarter 00, contingent on CSO)
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