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    Finfet: Fin Field Effect Transistor

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    leevasusan
    FinFET is a type of non-planar transistor used in modern processors. It uses a thin silicon fin structure that rises above the substrate, with a gate electrode wrapped around the fin. This allows multiple gates to control a single transistor. The vertically thin fin structure provides better electrostatic control than planar transistors, improving electrical characteristics and allowing smaller transistors to be built without short channel effects. FinFETs consume less power than traditional transistors, enabling higher processor performance and integration of more transistors without excessive heat generation.

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    Finfet: Fin Field Effect Transistor

    Uploaded by

    leevasusan
    130 views12 pages
    FinFET is a type of non-planar transistor used in modern processors. It uses a thin silicon fin structure that rises above the substrate, with a gate electrode wrapped around the fin. This allows multiple gates to control a single transistor. The vertically thin fin structure provides better electrostatic control than planar transistors, improving electrical characteristics and allowing smaller transistors to be built without short channel effects. FinFETs consume less power than traditional transistors, enabling higher processor performance and integration of more transistors without excessive heat generation.

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    Finfet

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    FinFET is a type of non-planar transistor used in modern processors. It uses a thin silicon fin structure that rises above the substrate, with a gate electrode wrapped around the fin. This allows multiple gates to control a single transistor. The vertically thin fin structure provides better electrostatic control than planar transistors, improving electrical characteristics and allowing smaller transistors to be built without short channel effects. FinFETs consume less power than traditional transistors, enabling higher processor performance and integration of more transistors without excessive heat generation.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    130 views12 pages

    Finfet: Fin Field Effect Transistor

    Uploaded by

    leevasusan
    FinFET is a type of non-planar transistor used in modern processors. It uses a thin silicon fin structure that rises above the substrate, with a gate electrode wrapped around the fin. This allows multiple gates to control a single transistor. The vertically thin fin structure provides better electrostatic control than planar transistors, improving electrical characteristics and allowing smaller transistors to be built without short channel effects. FinFETs consume less power than traditional transistors, enabling higher processor performance and integration of more transistors without excessive heat generation.

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    FINFET

    Fin Field Effect Transistor


    What is FinFET
    • FinFET, also known as Fin Field Effect Transistor
    • It is a type of non-planar or "3D" transistor used in the design of modern processors.
    • As in earlier, planar designs, it is built on an SOI (silicon on insulator) substrate.

    • However, FinFET designs also use a conducting channel that rises above the level of
    the insulator, creating a thin silicon structure, shaped like a fin, which is called
    a gate electrode.

    • This fin-shaped electrode allows multiple gates to operate on a single transistor.


    • Because of the vertically thin channel structure, it is referred to as a fin because it
    resembles a fish’s fin; hence the name FinFET.
    • inthe FinFET the transistor channel is a thin
    vertical fin with the gate fully “wrapped”
    around the channel formed between the source
    and the drain.
    • The gate of the FinFET can be thought of as a
    “multiple” gate surrounding the thin channel.
    Such a multiple gate can fully deplete the
    channel of carriers. This results in much better
    electrostatic control of the channel and thus
    better electrical characteristics.
    Construction of a bulk silicon-based FinFET

    • 1. Substrate
    • Basis for a FinFET is a lightly p-doped substrate with a hard mask on top (e.g.
    silicon nitride) as well as a patterned resist layer.
    • 2. Fin etch
    • The fins are formed in a highly anisotropic etch process. Since there is no stop
    layer on a bulk wafer as it is in SOI, the etch process has to be time based. In a 22
    nm process the width of the fins might be 10 to 15 nm, the height would ideally be
    twice that or more.
    • 3. Oxide deposition
    • To isolate the fins from each other a oxide deposition with a high aspect ratio
    filling behavior is needed.
    • 4. Planarization
    • The oxide is planarized by chemical mechanical polishing. The hard mask acts as a
    stop layer.
    • 5. Recess etch
    • Another etch process is needed to recess the oxide film to form a lateral isolation
    of the fins.
    • 6.Gate oxide
    • On top of the fins the gate oxide is deposited via thermal oxidation to isolate the
    channel from the gate elctrode. Since the fins are still connected underneath the
    oxide, a high-dose angled implant at the base of the fin creates a dopant junction
    and completes the isolation
    • 7. Deposition of the gate
    • Finally a highly n+-doped poly silicon layer is deposited on top of the fins, thus up
    to three gates are wrapped around the channel: one on each side of the fin, and -
    depending on the thickness of the gate oxide on top - a third gate above.
    NEED OF FINFET

    • Since the fabrication of MOSFET, the channel length of the device has been
    shrinking constantly so as to fabricate compact and fast devices. The following
    parameters related to MOSFET highlight the need for smaller, compact devices
    and explain why the MOSFET is not the suitable choice for the same. The shorter
    section of the gate electrode is known as the length and the longer section is
    called the width.
    • As the channel length of a MOSFET reduces, the short-channel effects increase.
    The short-channel effects are attributed to two physical phenomena:
    • a. The limitation imposed on electron drift characteristics in the channel
    • b. The modification of the threshold voltage due to the shortening channel length.
    Features
    • A traditional transistor takes a significant amount of power for operation , while
    FinFET consumes much less energy and is very efficient.
    • Large scale integration of normal transistor is not feasible as it will consume large
    amounts of energy and will heat up a lot,FinFET is used in processors as it takes
    less power and produce less heat.
    • Provides better processor performance.
    •Presented By : AKASH A MENON

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