Bipolar Junction Transistor: Engr. Sarah B. Tolentino Instructor

BJT
Bipolar Junction Transistor
Engr. Sarah B. Tolentino

Instructor
22/04/2019
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TRANSISTORS
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HISTORY OF TRANSISTORS
During the period 1904 to
1947, the vacuum tube
was undoubtedly the
electronic device of
interest and development.
In 1904, the vacuum tube

diode was introduced by
J. A. Fleming.
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Shortly thereafter, in 1906,
Lee De Forest added a
third element, called the
control grid, to the
vacuum diode, resulting in
the first amplifier, the
TRIODE.
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> Before, all equipment was using
valves, diodes and triodes, which
were all vacuum tubes. They were
indispensable but they were large,
short lived and consumed a lot of
power.
> The first computer, ENIAC, used

18000 vacuum tubes: the machine
could not run for more than a few
minutes as at least 1 tube would
burn and had to be replaced.
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This is a small vacuum tube

used in first generation
computers.
Here you can clearly see the

effect of overheating, leaving
a black stain on the inside of
the glass tube.
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Constant overheating and
burnout in the vacuum tubes of
ENIAC (Electronic Numerical
Integrator and Computer), the
first electronic computing
device, led AT&T Bell
Telephone Laboratory
Engineers, John Bardeen,
William Shockley, and Walter
Brattain to seek out a suitable
alternative for the commercially
unreliable vacuum tube.
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The three engineers successfully

demonstrated the principle of
amplifying an electrical current
using a solid semiconducting
material, silicon, forming the basic
concept behind the transistor.
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On December 23, 1947, Walter H.
Brattain, John Bardeen, and
William Shockley demonstrated
the amplifying action of the first
transistor at the Bell Telephone
Laboratories.
Brattain
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A transistor is a miniature electronic
component that can do two different jobs.
It can work either as an amplifier or a switch:
*Amplifier - it takes in a tiny electric current

at one end (an input current)
and produces a much bigger
electric current (an output current)
at the other
- current booster
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*Switches - Solid state switches are one

of the main applications for the use
of transistor to switch a DC output
“ON” or “OFF”.
Some output devices, such as LED’s only

require a few milliamps at logic level DC
voltages and can therefore be driven
directly by the output of a logic gate.
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Bell Laboratories, Murray Hill, New

Jersey (1947)
The First Point Contact
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Transistor 15
ADVANTAGES OF TRANSISTORS
 The advantages of transistor over the tube
where immediately obvious:
 It was smaller and light weight.

 No heater requirement or heater loss.
 Had rugged construction.
 More efficient since less power was absorbed
by the device itself
 It was instantly available for use, requiring no
warm up period.
 Low operating voltages were possible.
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TRANSISTOR CONSTRUCTION
A Bipolar Junction
Transistor (BJT) has three
terminals connected to
three doped semiconductor
regions.
In an NPN transistor,
a thin and lightly doped P-
type material is
sandwiched between two
thicker N-type materials.
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While a PNP
transistor, a thin and lightly
doped N-type material is
sandwiched between two
thicker P-type materials.
The term bipolar

reflects the fact that holes
and electrons participate in
the injection process into
the oppositely polarized
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material.
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Standard BJT symbols.

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TRANSISTOR OPERATION
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> The basic operation of transistor will now be

described using the NPN transistor.
> The operation of the PNP transistor is exactly

the same as if the roles played by the electron
and hole are interchanged.
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 The figure shows the
proper bias arrangement
for NPN.
 Notice that the base-

emitter junction is
forward-biased and the
base-collector junction
is reverse-biased.
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 The figure shows the
proper bias arrangement
for PNP.
 Notice that the base-

emitter junction is
forward-biased and the
base-collector junction
is reverse-biased.
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 Notice that in both cases, the BE

junction is forward-biased and the
BC junction is reverse-biased.
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What happens inside the NPN transistor?
 The forward bias from base to emitter
narrows the BE depletion region, and the
reverse bias from base to collector widens
the BC depletion region.
 The heavily doped n-type emitter region is

teeming with conduction band (free)
electrons that easily diffuse through the
forward-biased BE junction into the p-type
base region where they become minority
carriers, just as in a forward-biased diode.
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What
happens
inside
the
NPN
transistor?
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 The base region is lightly

doped and very thin so
that it has a limited
number of holes.
 Thus, only a small

percentage of all the
electrons flowing through
the BE junction can
combine with all the
available holes in the base.
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 These relatively few
recombined electrons flow
out of the base lead as
valence electrons, forming
the small base electron
current.
 Most of the electrons

flowing from the emitter
into the thin, lightly doped
base region do not
recombine but diffuse into
the BC depletion region.
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 Once in this region they
are pulled through the
reverse-biased BC
junction by the electric
field set up by the force of
attraction between the
positive and negative ions.
 The electrons now move

through the collector
region, out through the
collector lead, and into the
positive terminal of the
collector voltage source.
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TRANSISTOR CURRENTS
 The directions of the currents in an NPN and PNP

transistor and its schematic symbol.
 Notice that the arrow on the emitter of the transistor

symbols points in the direction of the conventional
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current. 31
TRANSISTOR CURRENTS
 These diagrams show that
the emitter current (IE) is
the sum of the collector
current (IC) and the base
current (IB), expressed as
follows:
 IB is small compared to Ic
and IE.
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TRANSISTOR CURRENTS
 The ratio of the DC
collector current IC to the
DC base current IB is the
DC Beta, which is the
current gain of a
transistor.
THUS,
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TRANSISTOR PARAMETERS
 Shown in the figure is the DC biasing of an NPN
and PNP transistors. VBB forward-biases the
emitter junction, and VCC reverse-biases the base-
collector junction.
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 For the current and voltage analysis, consider the
basic transistor bias circuit configuration given.
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RC
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Sample Problem
Determine Beta DC and IE for

a transistor where IB=50 micro
A and IC = 3.65 mA.
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Sample Problem
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Transistor Characteristics
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Transistor
Regions of Operation
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Transistor Regions of Operation
The transistor can be operated in three
modes:
CUT-OFF REGION
ACTIVE/LINEAR REGION
SATURATION REGION
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Switching Operation
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Switching Operation
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TRANSISTOR CATEGORIES
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TRANSISTOR TESTING
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TRANSISTOR TESTING
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TRANSISTOR TESTING
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TRANSISTOR
CONFIGURATIONS
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TRANSISTOR
CONFIGURATIONS
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COMMON-BASE (CB) CONFIGURATION
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COMMON-EMITTER (CE) CONFIGURATION
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COMMON-COLLECTOR (CC)
CONFIGURATION
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CONFIGURATION
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CONFIGURATION
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CONFIGURATION
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BJT

Bipolar Junction Transistor

Engr. Sarah B. Tolentino

In 1904, the vacuum tube

> The first computer, ENIAC, used

This is a small vacuum tube

Here you can clearly see the

The three engineers successfully

*Amplifier - it takes in a tiny electric current

*Switches - Solid state switches are one

Some output devices, such as LED’s only

Bell Laboratories, Murray Hill, New

 It was smaller and light weight.

The term bipolar

Standard BJT symbols.

> The basic operation of transistor will now be

> The operation of the PNP transistor is exactly

 Notice that the base-

 Notice that the base-

 Notice that in both cases, the BE

 The heavily doped n-type emitter region is

 The base region is lightly

 Thus, only a small

 Most of the electrons

 The electrons now move

 The directions of the currents in an NPN and PNP

 Notice that the arrow on the emitter of the transistor

Determine Beta DC and IE for

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