Lecture 01 Av 241 - Introduction
Lecture 01 Av 241 - Introduction
Lecture 01 Av 241 - Introduction
“BASIC SEMICONDUCTOR
CONCEPTS”
Text Book: Chapter 3
Section 3.7.1
Figure 3.40 Two-dimensional representation of the silicon crystal. The circles represent the
inner core of silicon atoms, with +4 indicating its positive charge of +4q, which is neutralized
by the charge of the four valence electrons. Observe how the covalent bonds are formed by
sharing of the valence electrons. At 0 K, all bonds are intact and no free electrons are available
for current conduction.
Important Concepts
• Drift
• Diffusion
• Doping
• N-type
• P-type
• Donor
• Acceptor
• Majority/minority
PN-Junction
Figure 3.40 Two-dimensional representation of the silicon crystal. The circles represent
the inner core of silicon atoms, with +4 indicating its positive charge of +4q, which is
neutralized by the charge of the four valence electrons. Observe how the covalent bonds
are formed by sharing of the valence electrons. At 0 K, all bonds are intact and no free
electrons are available for current conduction.
Figure 3.41 At room temperature, some of the covalent bonds are broken by
thermal ionization. Each broken bond gives rise to a free electron and a hole,
both of which become available for current conduction.
Figure 3.42 A bar of intrinsic silicon (a) in which the hole
concentration profile shown in (b) has been created along the x-axis by
some unspecified mechanism.
Figure 3.43 A silicon crystal doped by a pentavalent element. Each
dopant atom donates a free electron and is thus called a donor. The
doped semiconductor becomes n type.
Figure 3.44 A silicon crystal doped with a trivalent impurity. Each
dopant atom gives rise to a hole, and the semiconductor becomes p
type.
Summary
Next Lecture
• PN junction under Open Circuit and
Reverse Bias conditions