ECE Millipede

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SEMINAR
ON
MILLIPEDE

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Content
What is millipede
The millipede concept
Thermomechanical AFM Data Storage
Microscanner concept
Layout of the platform
Visco-elastic model of bit writing Topographic image of indi
vidual bits
Demonstration of the new erasing scheme
Advantages
References
What is millipede

 "Millipede" is a new (AFM)-based data sto


rage concept that has a potentially ultra
high density, terabit capacity, small for
m factor, and high data rate.
Millipede concept
Highly parallel, very dense AFM data storage syst
m
Write one bit

New storage medium used for writing small bits. A thi


n writable PMMA layer is deposited on top of a Si su
bstrate separated by a crosslinked film of epoxy photo
resist
Series of 40-nm data bits formed

(a) (b)

In a uniform array with (a) 120-nm pitch and (b) variable pitch
2
(>40 nm), resulting in bit area densities of up to 400 Gb/in . I
mages obtained with a thermal read-back technique
Read one bit

Principle of AFM thermal sensing. The tip of the heate


r cantilever is continuously heated by a dc power sup
ply while the cantilever is being scanned and the heat
er resistivity measured.
Layout and cross section of one cantilever
cell
Second general

Photograph of fabricated chip (14x7 mm2). The 32x32 cantile


ver array is located at the center, with bond pads distributed on
either side.
SEM image

SEM images of the cantilever array section with appr


oaching and thermal sensors in the corners, array and
single cantilever details, and tip apex.
I/v curve of one cantilever

The curve is nonlinear owing to the heating of the plat


form as the power and temperature are increased. For
doping concentrations between and
1*10 17
2 * ,
1018

at./cm3 the maximum temperature varies between 500


℃ and 700 ℃
Crosstalk current
Comparison of the I/V curve of an indepen
dent cantilever (solid line) with the current
response when addressing a cantilever in a
5x5 (dotted line) or a 32x32 (dashed line)
array with a Schottky diode serially to the
cantilever. Little change is observed in the
I/V curve between the different cases. Also
shown in the inset is a sketch representing
the direct path (thick line) and a parasitical
path (thin line) in a cantilever-diode array.
In the parasitical path there is always one
diode in reverse bias that reduces the paras
itical current.
Tip-apex height
Tip-apex height uniform
ity across one cantilever
row of the array with in
dividual contributions fr
om the tip height and ca
ntilever bending.
Microscanner concept

Using a mobile platform and flexible posts


Layout of the platform

Arrangement of the coils, the interconnects and the pe


rmanent magnets, as well as the various motions addr
essed by the corresponding coils
Cross section of the platform-fabrication proc
ess

(a) Coils are electroplated throug


h an SU-8 resist mask, which is re
tained as the body of the platform;
(b) an insulator layer is deposited;
(c) interconnects are electroplated;
(d) the platform is released from t
he silicon substrate
Visco-elastic model of bit writing

The hot tip heats a small volume of polymer material to more than Tg: the s
hear modulus of the polymer drops drastically from GPa to MPa, which in t
urn allows the tip to indent the polymer. In response, elastic stress (represe
nted as compression springs) builds up in the polymer. In addition, viscous
forces (represented as pistons) associated with the relaxation time for the lo
cal deformation of molecular segments limit the indentation speed
Visco-elastic model of bit writing

At the end of the writing process, the temperature is q


uenched on a microsecond time scale to room temper
ature: the stressed configuration of the polymer is froz
en-in (represented by the locked pistons)
Visco-elastic model of bit writing

The final bit corresponds to a metastable configuratio


n. The original unstressed flat state of the polymer ca
n be recovered by heating the bit volume to more than
Tg, which unlocks the compressed springs
Bit-writing threshold measurement
s
The load was controlled by pushin
g the cantilever/tip into the sample
with a controlled displacement and
a known spring constant of the can
tilever. When a certain threshold is
reached, the indentations become v
isible in subsequent imaging scan
s. The solid lines are guides to the
eye. Curves of similar shape woul
d be expected from the time-tempe
rature superposition principle
Topographic image of individual bits

(a) The region around the actual indentations clearly


shows the three-fold symmetry of the tip, here a thre
e-sided pyramid . (b) The indentations themselves exh
ibit sharp edges, as can be seen from the inverted 3D i
mage. Image size is 2 um.
Written bits for different polymer materials

The heating pulse length was 10 us, the load about 10 nN. The gray scale is
the same for all images. The heater temperatures for the bit on the left-hand
side are 445, 400, 365, and 275°C for the polymers Polysulfone, PMMA II
(anionically polymerized PMMA, M ~ 26k), PMMA I (Polymer Standard S
ervice (Germany) M ~ 500k), and Polystyrene, respectively. The temperatu
re increase between events on the horizontal axis was 14, 22, 20, and 9°C, r
espectively
The heater temperature threshold for writing
bits

The heater temperature thre


shold for writing bits with t
he same parameters as in Fi
g. 21 is plotted against the
glass-transition temperature
for these polymers includin
g poly-a-methyl-styrene
Section through a series of bits similar to Fig. 21

Here, a load of about 200 nN was applied before a heating pulse of 10-us length wa
s fired. The temperature of the heater at the end of the pulse has been increased from
430 to 610°C in steps of about 10.6°C. (a) The load was sufficient to form a plastic i
ndentation even if the polymer is not heated enough to come near the glass transitio
n, (b) By increasing the heater temperature a swelling of the polymer occurs which
works against the indentation and leads to an erasure of previously written "cold" bit
s, (c) As this process continues, the thermomechanical formation of indentations beg
ins to dominate until, finally, normal thermomechanical bit writing occurs.
Indentations in a PMMA film at several distances

The depth of the indentations is ~15 nm, about the thi


ckness of the PMMA layer. The indentations on the le
ft-hand side were written first, then a second series of
indentations were made with decreasing distance to th
e first series in going from a to e
Demonstration of the new erasing scheme

A bit pattern with variable pitch in the vertical axis (fa


st scan axis) and constant pitch in the horizontal direct
ion (slow scan axis) was prepared
Advantages

 High storage capacity (1 Tb/in2).


 Very small form factor.
 Low power consumption (100 milliwatts).
 It is re-writeable.
 High data rate (high as 1 - 2 MB/s).
 Long-term perspectives.
References
28

 Google.com
 Wikipedia.org
 Studymafia.org
 Pptplanet.com
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