PN Junction

Depletion Capacitance:-
In a reverse biased p-n junction diode also stores electric charge at the depletion region.
The depletion region is made of immobile positive and negative ions. In a reverse biased
p-n junction diode, the p-type and n-type regions have low resistance. Hence, p-type
and n-type regions act like the electrodes or conducting plates of the capacitor. The
depletion region of the p-n junction diode has high resistance.
Hence, the depletion region acts like the dielectric or insulating material. Thus, p-n
junction diode can be considered as a parallel plate capacitor.
In depletion region, the electric charges (positive and negative ions) do not move from
one place to another place. However, they exert electric field or electric force. Therefore,
charge is stored at the depletion region in the form of electric field. Thus, there exists a
capacitance at the depletion region. The capacitance at the depletion region changes
with the change in applied voltage.
When reverse bias voltage applied to the p-n junction diode is increased, a large
number of holes (majority carriers) from p-side and electrons (majority carriers) from
n-side are moved away from the p-n junction. As a result, the width of depletion
region increases whereas the size of p-type and n-type regions (plates) decreases.
We know that capacitance means the ability to store electric charge.
The p-n junction diode with narrow depletion width and large p-type and n-type
regions will store large amount of electric charge whereas the p-n junction diode
with wide depletion width and small p-type and n-type regions will store only a small
amount of electric charge. Therefore, the capacitance of the reverse bias p-n
junction diode decreases when voltage increases
The formula for depletion capacitance is CD =
Where, CD = Depletion capacitance
dQ = Change in number of minority carriers stored outside the
depletion region. dV = Change in voltage applied across diode.
CD =
Diffusion capacitance
Diffusion capacitance occurs in a forward biased p-n junction diode.
It is also sometimes referred as storage capacitance. It is denoted as
CD .
When forward bias voltage is applied to the p-n junction diode,
electrons (majority carriers) in the n-region will move into the p-region
and recombines with the holes. In the similar way, holes in the p-region
will move into the n-region and recombines with electrons. As a result,
the width of depletion region decreases.
A large number of charge carriers, which try to move into another region
will be accumulated near the depletion region before they recombine
with
the majority carriers.
As a result, a large amount of charge is stored at both sides of the
depletion region.
The accumulation of holes in the n-region and electrons in the p-region is

separated by a very thin depletion region or depletion layer. This depletion
region acts like dielectric or insulator of the capacitor and charge stored at
both sides of the depletion layer acts like conducting plates of the
capacitor.
Diffusion capacitance is directly proportional to the electric current or

applied voltage. If large electric current flows through the diode, a large
amount of charge is accumulated near the depletion layer. As a result,
large diffusion capacitance occurs.
Application of PN junction diode:-
P-N junction diode can be used as a photodiode as the diode is sensitive to the
light when the configuration of the diode is reverse-biased.
It can be used as a solar cell.
When the diode is forward-biased, it can be used in LED lighting applications.
It is used as rectifier in many electric circuits and as a voltage-controlled
oscillator in varactors.
Photo Diode :-
Photodiodes are a class of diodes that converts light energy to electricity.
Their working is exactly the opposite of LEDs which are also diodes but
they convert electricity to light energy. Photodiodes can also be used in
detecting the brightness of the light.
A photodiode is a PN-junction diode that consumes light energy to produce
an electric current. They are also called a photo-detector, a light detector,
and a photo-sensor. Photodiodes are designed to work in reverse bias
condition. Typical photodiode materials are Silicon, Germanium and Indium
gallium arsenide.
Symbol:-
Solar Cell :-
Solar cell is basically a junction diode, although its construction it
is little bit different from conventional p-n junction diodes. A very
thin layer of p-type semiconductor is grown on a relatively thicker
n-type semiconductor. We then apply a few finer electrodes on
the top of the p-type semiconductor layer.
These electrodes do not obstruct light to reach the thin p-type

layer. Just below the p-type layer there is a p-n junction. We also
provide a current collecting electrode at the bottom of the n-type
layer. We encapsulate the entire assembly by thin glass to protect
the solar cell from any mechanical shock.
Symbol of Solar Cell:-

Zener Diode:-
A Zener Diode, also known as a breakdown diode, is a heavily doped
semiconductor device that is designed to operate in the reverse
direction. When the voltage across the terminals of a Zener diode is
reversed, and the potential reaches the Zener Voltage (knee voltage),
the junction breaks down, and the current flows in the reverse direction.
This effect is known as the Zener Effect.
Zener Diode Definition

A Zener diode is a heavily doped semiconductor device that is
designed to operate in the reverse direction.
Zener diodes are manufactured with a great variety of Zener voltages
(Vz)
Symbol:-
A Zener diode operates just like a normal diode when it is forward-biased.

However, a small leakage current flows through the diode when connected in
reverse-biased mode. As the reverse voltage increases to the predetermined
breakdown voltage (Vz), current starts flowing through the diode. The current
increases to a maximum, which is determined by the series resistor, after
which it stabilizes and remains constant over a wide range of applied voltage.
There are two types of breakdowns for a Zener Diode:
Avalanche Breakdown
Zener Breakdown
Light Emitting Diode(LED):-
A light-emitting diode (LED) is a semiconductor device that emits light
when an electric current flows through it. When current passes
through an LED, the electrons recombine with holes emitting light in
the process. LEDs allow the current to flow in the forward direction
and blocks the current in the reverse direction.
Light-emitting diodes are heavily doped p-n junctions. Based on the

semiconductor material used and the amount of doping, an LED will
emit coloured light at a particular spectral wavelength when forward
biased. As shown in the figure, an LED is encapsulated with a
transparent cover so that emitted light can come out.
Symbol:-
CONCLUSION:-
With this setup some of the very important characteristics of the

PN junction diode and its material are determined with simple
laboratory experiment. The basic technique follows from the
reference given below. The unit however has been carefully
designed for the student environment. With built-in and protected
and bias sources, signal sources, digital displays and
temperature controlled over.
Questions and answers:-
Q1. How does reverse saturation current of

a PN junction diode vary with temperature?
P-N junction parameters reverse saturation current, bias current, reverse
breakdown voltage and barrier voltage are depends on temperature. The
reverse saturation current increase with the rise of temperature of the junction
diode. This is because the minority carrier density contributing proportion
increases. With the rise of temperature Increase in reverse saturation current
with temperature offsets the effect of rise in temperature. Barrier voltage is
also dependent on temperature if decreases by 2mV/°C for
germanium and silicon
Q5. What is Depletion and Diffusion
Capacitance?
Ans Diffusion capacitance: Diffusion capacitance occurs in a forward biased p-n junction diode.
Diffusion capacitance is also sometimes referred as storage capacitance. The diffusion
capacitance occurs due to stored charge of minority electrons and minority holes near the
depletion region. When the width of depletion region decreases, the diffusion capacitance
increases. The diffusion capacitance value will be in the range of nano farads (nF) to micro farads
(μF).The problem with diffusion capacitance is that amount of carriers (and capacitance) is
proportional to current. Therefore, the higher the current, the higher the capacitance. Transition
capacitance:When P-N junction is reverse biased the depletion region act as an insulator or as a
dielectric medium and the p-type and N-type region have low resistance and act as the plates.Thus
this P-N junction can be considered as a parallel plate capacitor.This junction capacitance is called
as space charge capacitance or transition capacitance and is denoted as CT .The depletion region
increases with the increase in reverse bias potential the resulting transition capacitance decreases.

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Depletion Capacitance:-

The accumulation of holes in the n-region and electrons in the p-region is

Diffusion capacitance is directly proportional to the electric current or

These electrodes do not obstruct light to reach the thin p-type

Symbol of Solar Cell:-

Zener Diode Definition

A Zener diode operates just like a normal diode when it is forward-biased.

There are two types of breakdowns for a Zener Diode:

Light-emitting diodes are heavily doped p-n junctions. Based on the

With this setup some of the very important characteristics of the

Q1. How does reverse saturation current of

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