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EEEG 204
Chapter 1 Semiconductor (Lecture 1)
07/08/2023 Books • Ch-1, Ch-2 : Principle of electronics by VK Meheta • Ch-3 : Power electronics by PS Bimra • Ch-4, Ch-5 : Circuits Devices and System, Wiley Int. Edition • Ch-6, Ch-7 : Instrument and Measurement, AD Helfrick
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Semiconductors • A semiconductor is a substance which has resistivity in between conductors and insulators, e.g. Germanium, Silicon, Selenium, Carbon etc. • Properties of Semiconductor • The resistivity of a semiconductor is less than an insulator but more than a conductor. • It has negative temperature co-efficient of resistance. That means the resistance of a semiconductor decreases with increase in temperature and vice-versa. • When a suitable metallic impurity is added to a semiconductor, its current conducting properties change appreciably.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Examples- • The two most frequently used semiconductors are germanium (Ge) and silicon (Si). It is because the energy required to break their co- valent bonds is very small, 0.7 eV for Ge and 1.1 eV for Si.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Movement of electrons/holes • When an electric field is applied to a material, only if electrons can gain sufficient energy to move into the conduction band, will they move freely to establish a current. The greater the number of charged carriers in the conduction band, the better the conduction. Figure: Semiconductor energy band structure showing the movement of the positive holes and negative electrons as the charge carriers for an electric current.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Movement of electrons/holes • The movement of hole/electron current can be explained in terms of energy bands. • Due to thermal energy, an electron leaves the valence band to enter into the conduction band, electron at VB ‘L’ moves to CB creating hole at ‘L’. • Now the valence electron at M comes to fill the hole at L. The result is that hole disappears at L and appears at M and so on. • It is now clear that valence electrons move along Figure: Movement of electrons/holes the path PNML whereas holes move in the opposite direction i.e. along the path LMNP.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Energy band and Covalent bond for semiconductors
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Types of semiconductors • Semiconductors can be classified as, • Intrinsic semiconductor • Extrinsic semiconductor • P-type semiconductor • N-type semiconductor
The main limitation of intrinsic
semi-conductors is the energy used to break co-valent bond to create charge carriers. So, intrinsic s/c are not used due to this limitation. 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE Extrinsic semiconductor
• When impurities are added to pure
semiconductor to increase the charge carriers then it becomes an extrinsic semiconductor.
• In extrinsic semiconductor without
breaking the covalent bonds we can increase the charge carriers.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE N-type Semiconductor
• When pentavalent impurity is dopped to the
semiconductor, we get n-type semi-conductor. • Eg- Dopping Arsenic ‘As’ on ’Si’, n-type semiconductor is formed. Because pentavalent impurity donate one electron and become donor. • Pentavalent impurity knows as donor. • In addition some of the co-valent bonds break due to temperature and some hole/electron pair also generated. • However, Electrons are majority carriers and holes are minority carriers. 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE P-type Semiconductor • When trivalent impurity is dopped to the semiconductor, we get p-type semi-conductor. • Eg- Dopping Gallium ‘Ga’ on ’Si’, p-type semiconductor is formed. Because trivalent impurity accept one electron and become acceptor. • Triavalent impurity knows as acceptor. • In addition some of the co-valent bonds break due to temperature and some hole/electron pair also generated. • Holes are majority carriers and electrons are minority carriers.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
PN junction diode
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Formation of the Depletion Region • The free electrons in the n region are randomly drifting in all directions. • At the instant of the p-n junction formation, the free electrons near the junction in the n region begin to diffuse across the junction into the p region where they combine with holes near the junction. • Before the p-n junction is formed, recall that there are as many electrons as protons in the n-type material, making the material neutral in terms of net charge. The same is true for the p-type material. • When the p-n junction is formed, the n region loses free electrons as they diffuse across the junction. This creates a layer of positive charges (pentavalent ions) near the junction. • As the electrons move across the junction, the p region loses holes as the electrons and holes combine. This creates a layer of negative charges (trivalent ions) near the junction. • These two layers of positive and negative charges form the depletion region. The term depletion refers to the fact that the region near the p-n junction is depleted of charge carriers (electrons and holes) due to diffusion across the junction. • Keep in mind that the depletion region is formed very quickly and is very thin compared to the n region and p region.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Barrier Potential • In the depletion region there are many positive charges and many negative charges on opposite sides of the p-n junction. • The forces between the opposite charges form an electric field creates the electric field which is a barrier to the free electrons in the n region. • The external energy must be applied to get the electrons to move across the barrier of the electric field in the depletion region. • The potential difference of the electric field across the depletion region is the amount of voltage required to move electrons through the electric field. This potential difference is called the barrier potential and is expressed in volts. • The barrier potential of a pn junction depends on several factors, including the type of semiconductive material, the amount of doping, and the temperature. • The typical barrier potential is approximately 0.7 V for silicon and 0.3 V for germanium at room temperature. 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE PN Junction diode characteristics
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
PN Junction diode characteristics • There are two operating regions and three possible “biasing” conditions for the standard Junction Diode and these are: • Zero Bias – No external voltage potential is applied to the PN junction diode. • Forward Bias – The voltage potential is connected positive, (+ve) to the P- type material and negative, (-ve) to the N-type material across the diode which has the effect of Decreasing the PN junction diodes width. • Reverse Bias – The voltage potential is connected negative, (-ve) to the P- type material and positive, (+ve) to the N-type material across the diode which has the effect of Increasing the PN junction diode’s width.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
PN Junction diode characteristics: Explanation • If a suitable positive voltage (forward bias) is applied between the two ends of the PN junction, it can supply free electrons and holes with the extra energy they require to cross the junction as the width of the depletion layer around the PN junction is decreased. • By applying a negative voltage (reverse bias) results in the free charges being pulled away from the junction resulting in the depletion layer width being increased. This has the effect of increasing or decreasing the effective resistance of the junction itself allowing or blocking current flow through the diode.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Diode modelling • Diode modelling refers to the mathematical models used to approximate the actual behavior of real diodes to enable calculations and circuit analysis. • A diode's I-V curve is nonlinear in nature. This nonlinearity complicates calculations in circuits involving diodes so simpler models are often required.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Diode modelling • The diode equation relates the diode current ’I’ of a p-n junction diode to the diode voltage Vd. This relationship is expressed as diode current equation, • , where is the saturation current of the diode, is the Thermal voltage (~26mV at room temperature), is known as the diode ideality factor (1 to 2 for silicon) • Normally, >>, then formula will be, , which is called as diode current model.
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Practice
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE 07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE Rectifiers: Converts AC into DC • One of the important applications of a semiconductor diode is in rectification of AC signals to DC. Diodes are very commonly used for obtaining DC voltage supplies from the readily available AC voltage. • There are many possible ways to construct rectifier circuits using diodes. The three basic types of rectifier circuits are: • Half Wave Rectifier • Full Wave Rectifier • Bridge Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Half Wave Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Half Wave Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Half Wave Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE EEEG 204
Chapter 1 Semiconductor (Lecture 2)
07/08/2023 Full wave rectifier: Center tap
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Full wave Bridge Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Full wave Bridge Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Full wave Bridge Rectifier
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE Zener diode: Used for Voltage regulator
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
Zener diode as voltage regulator
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE
07/08/2023 BE Mechanical/Chemical, II/I, KU, SOE Light Emitting Diode (LED)
