UNIT – II : BJT Circuits

Characteristics and specifications of BJT,

MOSFET ( Enhancement type).
CE, CC and CB configurations
α, β, concept of gain and Band width BW.
Operation of BJT in cut-off, saturation and active
regions ( DC analysis).
BJT as a switch,
Single stage BJT amplifier,
EMOSFET as a switch,

6 Hours
 LECTURE IMPLEMENTATION PLAN UNIT -II
Lecture Topics to be covered in Unit – II Text Books/ Reference
No. Semiconductor devices and Appl Books and Page No.
Characteristics and specification of T5 – 4.1 to 4.3 Pg 170 -186
BJT T4 – 8.1 Pg
CE, CB, CC Configuration T4 – 4.5 to 4.7 Pg
Alpha, Beta, concept of gain and T2 – 9.10 Pg
Bandwidth T5 – 10.1, 10.5 Pg 476 & 511
Operation of BJT in cutoff, saturation T5 – 4.3 Pg 174 -181
and active region ( DC analysis) T5 – 5.1,5.2 Pg 224 -238
Characteristics and specifications of T5 – 7.1, 7.2, 7.4, 7.5
FET and MOSFET ( Enhancement) T4 -9.3
BJT as a switch T5 – 4.5 Pg 190 - 192
MOSFET as a switch T5 – 7.5 Pg 356 - 357
Single stage BJT amplifier ( only CE) T5 – 6.3 Pg 274
SCR, DIAC, TRIAC construction, T5 – 11.2 to11.5 Pg 537 - 552
characteristics and specifications, list
of applications
8 Hours
Bipolar Junction
Transistor
BJT
 Pictorial History of Transistors

http://www.bellsystemmemorial.com/belllabs_transistor.html
 Introduction
• The transistor was developed by Dr. William Shockley along
with Bell Laboratories team in 1951.
 Introduction
• The semiconductor device like a diode cannot amplify a
signal, therefore its application area is limited.
 Introduction
• The semiconductor device like a diode cannot amplify a
signal, therefore its application area is limited.
• The next development of semiconductor device after diode is
a BJT (bipolar junction transistor).
 Introduction
• It is a three terminal device. The terminals are – collector,
emitter, and base. Out of which the base is a control terminal.
 Introduction
• A signal of small amplitude applied to the base is available in
the “magnified” form at the collector of the transistor.
 Introduction
• Thus the large power signal is obtained from a small power
signal.
 Introduction
• The additional power is required for this operation is obtained
from an external sources of DC power.
 Introduction
• The additional power is required for this operation is obtained
from an external sources of DC power.
• BJT is the basic building block of almost all the electronic
circuit right from a simple regulator or oscillator circuit, logic
gates to a digital computer.
Introduction
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
• Highly automated manufacturing processes, resulting in low
per-unit cost.
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
• Highly automated manufacturing processes, resulting in low
per-unit cost.
• Lower possible operating voltages, making transistors suitable
for small, battery-powered applications.
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
• Highly automated manufacturing processes, resulting in low
per-unit cost.
• Lower possible operating voltages, making transistors suitable
for small, battery-powered applications.
• No warm-up period required after power application.
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
• Highly automated manufacturing processes, resulting in low
per-unit cost.
• Lower possible operating voltages, making transistors suitable
for small, battery-powered applications.
• No warm-up period required after power application.
• Lower power dissipation and generally greater energy
efficiency.
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
• Highly automated manufacturing processes, resulting in low
per-unit cost.
• Lower possible operating voltages, making transistors suitable
for small, battery-powered applications.
• No warm-up period required after power application.
• Lower power dissipation and generally greater energy
efficiency.
• Higher reliability and greater physical ruggedness.
 Advantages of a transistor
• Small size and minimal weight, allowing the development of
miniaturized electronic devices.
• Highly automated manufacturing processes, resulting in low
per-unit cost.
• Lower possible operating voltages, making transistors suitable
for small, battery-powered applications.
• No warm-up period required after power application.
• Lower power dissipation and generally greater energy
efficiency.
• Higher reliability and greater physical ruggedness.
• Extremely long life. Some transistorized devices produced
more than 30 years ago are still in service.
 Disadvantages of a transistor
• Silicon transistors do not operate at voltages higher than
about 1 kV,
 Disadvantages of a transistor
• Silicon transistors do not operate at voltages higher than
about 1 kV,
• The electron mobility is higher in a vacuum, so that high
power, high frequency operation is easier in tubes
 Why it is called as a transistor ?
• The term transistor was derived from the words TRANSFER
and RESISTOR.
 Why it is called as a transistor ?
• The term transistor was derived from the words TRANSFER
and RESISTOR.
• This term was adopted because it best describes the
operation of transistor, which is transfer of an input signal
current from a low resistance circuit to high resistance circuit.
 Why it is called as a “Bipolar” transistor ?
• The conduction in a bipolar junction transistor takes place due
to both, electrons and holes, that is why it is called as
“bipolar” transistor.
Why it is called as a “Bipolar” transistor ?
 Types of transistor
• The bipolar transistors are of two types
 Types of transistor
• The bipolar transistors are of two types :

• P-N-P Transistor
 Types of transistor
• The bipolar transistors are of two types :

• P-N-P Transistor

• N-P-N Transistor
 Transistor construction
• A transistor has, essentially, three regions known as emitter,
base and collector.
 Transistor construction
• A transistor has, essentially, three regions known as emitter,
base and collector.

• All these three regions are provided with terminals which

labelled as E (emitter ), B (Base), and C (collector)
 Emitter :
•It is a region situated in one side
of transistor, which supplies charge carriers
(i.e. electrons and holes) to the other two regions
•The emitter is heavily doped region

p n
n p
p n
 Emitter :
•It is a region situated in one side
of transistor, which supplies charge carriers
(i.e. electrons and holes) to the other two regions
•The emitter is heavily doped region

Base :
p n •It is a middle region that forms two P-N junctions
n p In the transistor.
p n • the base of transistor is thin as compared to
Emitter.
And it is lightly doped region
 Emitter :
•It is a region situated in one side
of transistor, which supplies charge carriers
(i.e. electrons and holes) to the other two regions
•The emitter is heavily doped region

Base :
p n •It is a middle region that forms two P-N junctions
n p In the transistor.
p n • the base of transistor is thin as compared to
Emitter.
And it is lightly doped region

collector :
•It is the situated in the other side of transistor (i.e. Opposite to
the emitter), which collect charge carriers (electrons or holes)
•The collector of a transistor is always larger than the emitter and
base of transistor.
•The doping level of the collector is intermediate between the heavy
Doping of emitter and light doping of the base
 P-N-P transistor

P
 P-N-P transistor

P
 P-N-P transistor

P
 P-N-P transistor
C

P
 P-N-P transistor

E
 P-N-P transistor

N
B

E
 P-N-P transistor

P
collector Base
Junction JC

N
B

E
 P-N-P transistor

P Collector Base
Junction JC

N
B
Emitter Base
Junction JE
P

E
 P-N-P transistor

P Collector Base
Junction JC

N
B
Emitter Base
Junction JE
P
E
Emitter
E
 P-N-P transistor

P Collector Base
Junction JC

N B
B
Emitter Base Base
Junction JE
P
E
Emitter
E
 P-N-P transistor

C
C
Collector

P Collector Base
Junction JC

N B
B
Emitter Base Base
Junction JE
P
E
Emitter
E
 N-P-N transistor

C
C
Collector

N Collector Base
Junction JC

P B
B
Emitter Base Base
Junction JE
N
E
Emitter
E
 N-P-N transistor

C
C
Collector

N Collector Base
Junction JC

P B
B
Emitter Base Base
Junction JE
N
E
Emitter
E
 N-P-N transistor

C
C
Collector

N Collector Base
Junction JC

P B
B
Emitter Base Base
Junction JE
N
E
Emitter
E
 transistor currents

C
C
Collector

N Collector Base
Junction JC

P B
B
Emitter Base Base
Junction JE
N
E
Emitter
E
Number of P-N junctions and equivalent circuit

P E

N B
Number of P-N junctions and equivalent circuit

P E

N B

N B

P C
Number of P-N junctions and equivalent circuit

P E

N
P B

P C
Number of P-N junctions and equivalent circuit

E
Emitter

P E

B N
P B
Base

P C

C
Collector

Equivalent for P-N-P Transistor

Number of P-N junctions and equivalent circuit

E
Emitter

N E

B P B
Base

N C

C
Collector

Equivalent for N-P-N Transistor

Number of P-N junctions and equivalent circuit

E
Emitter

N E

B P B
Base

N C

C
Collector
 An unbiased Transistor
• For an unbiased transistor no external power supplies are
connected to it

Base
Junction Junction
JEB JCB

Emitter collector

P N P
 An unbiased Transistor
• For an unbiased transistor no external power supplies are
connected to it

Base
Junction Junction
JEB JCB

Emitter collector

P N P
 An unbiased Transistor
• For an unbiased transistor no external power supplies are
connected to it

Base
Junction Junction
JEB JCB

- + + -
- + + -
Emitter collector
- + + -
- + + -
- + + -

P N P
 An unbiased Transistor
• For an unbiased transistor no external power supplies are
connected to it

Base
Junction Junction
JEB JCB

- + + + + -
- + + + + -
Emitter collector
- + + + + -
- + + + + -
- + + + + -

P N P
 An unbiased Transistor
• For an unbiased transistor no external power supplies are
connected to it

Base
Junction Junction
JEB JCB

- + + + + -
- + + + + -
Emitter collector
P - + + N + + - P
- + + + + -
- + + + + -

Depletion Depletion
region region
Depletion Regions in an unbiased P-N-P transistor
 An unbiased Transistor
• For an unbiased transistor no external power supplies are
connected to it

Base
Junction Junction
JEB JCB

+ - - - - +
+ - - - - +
Emitter collector
+ - - - - +
N P N
+ - - - - +
+ - - - - +

Depletion Depletion
region region
Depletion Regions in an unbiased N-P-N transistor
Penetration of depletion region
 Penetration of depletion region
• The width of depletion region is not same on the two sides of
the junction.

• The depletion region is always penetrates more in the lightly

doped region i.e. the base region.
 Penetration of depletion region
• The width of depletion region is not same on the two sides of
the junction.

• The depletion region is always penetrates more inn the lightly

doped region i.e. the base region.

• Therefore the penetration of depletion region is less in the

heavily doped collector and emitter regions, and more into the
base region.
 Transistor biasing in the active region
• Biasing is the process of applying external voltages to the
transistor. The two junctions in a BJT must be biased properly
in order to operate it as an amplifier.
 Transistor biasing in the active region
• Biasing is the process of applying external voltages to the
transistor. The two junctions in a BJT must be biased properly
in order to operate it as an amplifier.

• A BJT is capable of operating in three different regions,

depending on the biasing.
• The regions of operations are:
 Transistor biasing in the active region
• Biasing is the process of applying external voltages to the
transistor. The two junctions in a BJT must be biased properly
in order to operate it as an amplifier.

• A BJT is capable of operating in three different regions,

depending on the biasing.
• The regions of operations are:

• Cutoff region (transistor is off)

 Transistor biasing in the active region
• Biasing is the process of applying external voltages to the
transistor. The two junctions in a BJT must be biased properly
in order to operate it as an amplifier.

• A BJT is capable of operating in three different regions,

depending on the biasing.
• The regions of operations are:

• Cutoff region (transistor is off)

• Saturation region (transistor is fully on )
 Transistor biasing in the active region
• Biasing is the process of applying external voltages to the
transistor. The two junctions in a BJT must be biased properly
in order to operate it as an amplifier.

• A BJT is capable of operating in three different regions,

depending on the biasing.
• The regions of operations are:

• Cutoff region (transistor is off)

• Saturation region (transistor is fully on )
• Active region ( in between saturation and cutoff )
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff
region
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse
biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff Reverse Reverse
region biased biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation
region
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation Forward
region biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation Forward Forward
region biased biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation Forward Forward
region biased biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation Forward Forward
region biased biased
3 Active
region
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff Reverse Reverse
region biased biased
2 Saturation Forward Forward
region biased biased
3 Active Forward
region biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff Reverse Reverse
region biased biased
2 Saturation Forward Forward
region biased biased
3 Active Forward Reverse
region biased biased
 Transistor biasing in the active region

Sr. Region of Base emitter Collector base application

No. operation junction junction
1 Cutoff region Reverse Reverse
biased biased
2 Saturation Forward Forward
region biased biased
3 Active Forward Reverse Amplifier
region biased biased
 Transistor operation in the active region
Junction Junction
JEB JCB

+ - - - - +
+ - - - - +
Emitter collector
+ - - - - +
N P N
+ - - - - +
+ - - - - +

Depletion Depletion
region region

Base
 Transistor operation in the active region
Junction Junction
JEB JCB

+ - - - - +
+ - - - - +
Emitter collector
+ - - - - +
N P N
+ - - - - +
+ - - - - +

RE Depletion Depletion
region region

- + Base

VEE
 Transistor operation in the active region
Junction Junction
JEB JCB

+ - - - - +
+ - - - - +
Emitter collector
+ - - - - +
N P N
+ - - - - +
+ - - - - +

RE Depletion Depletion RC
region region

- + - +
Base

VEE VCC
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
N P N
- - +
- - +

RE

- +
Base

VEE
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
N P N
- - +
- - +

RE

- +
Base

VEE
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
N P N
- - +
- - +

RE

- +
Base

VEE
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
P N
- - +
- - +

RE

- +
Base

VEE
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
N P N
- - +
- - +

RE Base electron
current

- +
Base

Emitter electron This constitutes the base current IB

current VEE Thus base current flows due to the
Recombination of electrons and holes
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
N P N
- - +
- - +

RE Base electron
current

- + - +
Base

Emitter electron This constitutes the base current IB VCC

current VEE Thus base current flows due to the
Recombination of electrons and holes
 Transistor operation in the active region
Junction Junction
Electrons
JEB Holes JCB

- - +
- - +
Emitter collector
- - +
N P N
- - +
- - +

Collector electron
RE Base electron
current
current

- + - +
Base

Emitter electron This constitutes the base current I B VCC

current VEE Thus base current flows due to the
Recombination of electrons and holes
 Transistor operation in the active region
Junction Junction
JEB JCB

Emitter collector
N P N

Electron emitted
Electron collected

RE RC
Collector electron
current

- + - +
Base

Emitter electron This constitutes the base current I B

current VEE Thus base current flows due to the VCC
Recombination of electrons and holes
 Transistor operation in the active region
Junction Junction
JEB JCB

Emitter collector
N P N

Electron emitted
Electron collected

RC
RE Direction
Direction Conventional Direction
Conventional Current IB Conventional
Current IE Current IC
- + - +
Base

Emitter electron
current VEE VCC
 Transistor operation in the active region
Junction Junction
JEB JCB

Emitter collector
N P N

Electron emitted
Electron collected

RC
RE Direction
Direction Conventional Direction
Conventional Current IB Conventional
Current IE Current IC
- + - +
Base

Emitter electron
current VEE VCC
IE = I C + I B
 Transistor operation in the active region
Junction Junction
JEB JCB

Emitter collector
N P N

Electron emitted
Electron collected

RC
RE Direction
Direction Conventional Direction
Conventional Current IB Conventional
Current IE Current IC
- + - +
Base

IE = I C + I B