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- Dmitri Z. Garbuzov (Dmitri Salmanowitsch Garbusow, russisch Дмитрий Залманович Гарбузов; * 27. Oktober 1940 in Swerdlowsk; † 20. August 2006 in Princeton, New Jersey), war ein russisch-US-amerikanischer Physiker, der sich mit Laserphysik befasste. (de)
- Dmitri Z. Garbuzov (October 27, 1940, Sverdlovsk (Yekaterinburg) – August 20, 2006, Princeton, New Jersey) was one of the pioneers and inventors of room temperature continuous-wave-operating diode lasers and high-power diode lasers. The first room-temperature, continuous-wave diode lasers were successfully invented, developed, and almost simultaneously demonstrated at the Ioffe Physico-Technical Institute in Leningrad, Russia by a team including Garbuzov and Zhores Alferov (winner of the 2000 Nobel Prize for Physics), and by the competing team of I. Hayashi and M. Panish at Bell Telephone Laboratories in Murray Hill, New Jersey. Both teams attained this accomplishment in 1970. Garbuzov was also responsible for the development of practical high-power, high-efficiency, diode lasers at a variety of wavelength bands from visible to mid-infrared wavelengths. Following perestroika, Garbuzov, who had served as an accomplished and respected scientist and manager within the Soviet scientific research system, established a research group in the West which employed multiple Russian émigré scientists and simultaneously contributed to three American for-profit enterprises. (en)
- ドミトリ・ザルマノヴィッチ・ガルブゾフ（Дмитрий Залманович Гарбузов、1940年10月27日 - 2006年8月20日）は、ソビエト連邦、ロシア連邦の半導体工学者。 (ja)
- Дмитрий Залманович Гарбузов (Dmitri Z. Garbuzov) (27.10.1940, Свердловск — 20.08.2006, Принстон) — советский, российский и американский физик, член-корреспондент РАН (1991). (ru)
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- 16727 (xsd:nonNegativeInteger)
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- Dmitri Garbuzov Receiving the Lenin Prize in Russia (en)
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- Practical diode lasers at a variety of wavelengths from visible to mid-infrared (en)
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- Ioffe Physico-Technical Institute ; in latter years Princeton University , Sarnoff Corporation , and Princeton Lightwave, Inc. (en)
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- Dmitri Z. Garbuzov (Dmitri Salmanowitsch Garbusow, russisch Дмитрий Залманович Гарбузов; * 27. Oktober 1940 in Swerdlowsk; † 20. August 2006 in Princeton, New Jersey), war ein russisch-US-amerikanischer Physiker, der sich mit Laserphysik befasste. (de)
- ドミトリ・ザルマノヴィッチ・ガルブゾフ（Дмитрий Залманович Гарбузов、1940年10月27日 - 2006年8月20日）は、ソビエト連邦、ロシア連邦の半導体工学者。 (ja)
- Дмитрий Залманович Гарбузов (Dmitri Z. Garbuzov) (27.10.1940, Свердловск — 20.08.2006, Принстон) — советский, российский и американский физик, член-корреспондент РАН (1991). (ru)
- Dmitri Z. Garbuzov (October 27, 1940, Sverdlovsk (Yekaterinburg) – August 20, 2006, Princeton, New Jersey) was one of the pioneers and inventors of room temperature continuous-wave-operating diode lasers and high-power diode lasers. Following perestroika, Garbuzov, who had served as an accomplished and respected scientist and manager within the Soviet scientific research system, established a research group in the West which employed multiple Russian émigré scientists and simultaneously contributed to three American for-profit enterprises. (en)
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- Dmitri Z. Garbuzov (en)
- Dmitri Z. Garbuzov (de)
- ドミトリー・ガルブゾフ (ja)
- Гарбузов, Дмитрий Залманович (ru)
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