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2010 – 2019
- 2016
[j9]Hiroyuki Fukuyama, Michihiro Hirata, Kenji Kurishima, Minoru Ida, Masami Tokumitsu, Shogo Yamanaka, Munehiko Nagatani, Toshihiro Itoh, Kimikazu Sano, Hideyuki Nosaka
, Koichi Murata:
An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform. IEICE Trans. Electron. 99-C(3): 385-396 (2016)
2000 – 2009
- 2007
- [j8]Tetsuya Suemitsu, Masami Tokumitsu:
InP HEMT Technology for High-Speed Logic and Communications. IEICE Trans. Electron. 90-C(5): 917-922 (2007) - 2006
- [j7]Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni:
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electron. Express 3(13): 310-315 (2006) - [j6]Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu:
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs. IEICE Trans. Electron. 89-C(7): 949-953 (2006) - [j5]Hideki Kamitsuna, Yasuro Yamane, Masami Tokumitsu, Hirohiko Sugahara, Masahiro Muraguchi:
Low-power InP-HEMT switch ICs integrating miniaturized 2×2 switches for 10-Gb/s systems. IEEE J. Solid State Circuits 41(2): 452-460 (2006) - 2005
- [j4]Hiroshi Ito, Tomofumi Furuta, Toshihiko Kosugi, Akihiko Hirata, Hiroyuki Takahashi, Yoshifumi Muramoto, Masami Tokumitsu, Yasuhiro Sato, Tadao Nagatsuma, Tadao Ishibashi:
Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band. IEICE Electron. Express 2(16): 446-450 (2005) - [j3]Hideyuki Nosaka, Makoto Nakamura, Kimikazu Sano, Minoru Ida, Kenji Kurishima, Tsugumichi Shibata, Masami Tokumitsu, Masahiro Muraguchi:
A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation. IEICE Trans. Electron. 88-C(6): 1225-1232 (2005) - 2001
- [j2]Kenjiro Nishikawa, Kenji Kamogawa, Belinda Piernas, Masami Tokumitsu, Suehiro Sugitani, Ichihiko Toyoda, Katsuhiko Araki:
Three-dimensional MMIC technology for low-cost millimeter-wave MMICs. IEEE J. Solid State Circuits 36(9): 1351-1359 (2001)
1990 – 1999
- 1998
- [j1]Koichi Murata, Taiichi Otsuji, Mikio Yoneyama, Masami Tokumitsu:
A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's. IEEE J. Solid State Circuits 33(10): 1527-1535 (1998)
Coauthor Index
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