Ingaas Kird0005e

Selection guide - September 2017
InGaAs Photodiodes
Near infrared detectors with low noise and superb frequency characteristics
HAMAMATSU PHOTONICS K.K.

I n G a A s P h o t o d i o d e s
InGaAs Photodiodes
Near infrared detectors with low noise and superb frequency
characteristics
Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and
developed advanced InGaAs photodiodes that feature high speed, high sensitivity, and low noise over a spec-
tral range from 0.5 μm to 2.6 μm. InGaAs photodiodes are used in a wide variety of applications ranging from
optical communications to chemical analysis and measurement fields. Hamamatsu provides a wide range of
products in different packages including metal, ceramic and surface mount packages as well as linear and area
image sensors, and infrared detector modules with built-in preamplifiers.
We also manufacture custom products to meet your specific requirements. Please feel free to contact us.
Selection guide · · · · · · · · · · · · · · · · · · · · · · · · · · · · 3
· Spectral response range · · · · · · · · · · · · · · · · · · · · 3
· Response speed · · · · · · · · · · · · · · · · · · · · · · · · · · 5
· Packages · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 6
· Application examples · · · · · · · · · · · · · · · · · · · · · · · 7
Contents InGaAs PIN photodiodes, InGaAs APD · · · · · · · · 9

· Short-wavelength enhanced type InGaAs PIN photodiodes · · · · 9
· Standard type InGaAs PIN photodiodes· · · · · · · · 9
· Long wavelength type InGaAs PIN photodiodes 11
· InGaAs APD · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 12
InGaAs image sensors· · · · · · · · · · · · · · · · · · · · · 13 Options· · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 17
· InGaAs linear image sensors · · · · · · · · · · · · · · · 13 · Amplifiers for infrared detectors· · · · · · · · · · · · · 17
· InGaAs area image sensors · · · · · · · · · · · · · · · · 14 · Heatsinks for TE-cooled detectors · · · · · · · · · · · 18
· Temperature controller · · · · · · · · · · · · · · · · · · · · · 18
Related products · · · · · · · · · · · · · · · · · · · · · · · · · 15 · Multichannel detector heads· · · · · · · · · · · · · · · · 19
· Two-color detectors · · · · · · · · · · · · · · · · · · · · · · · 15 · Driver circuits · · · · · · · · · · · · · · · · · · · · · · · · · · · · 20
· Infrared detector modules with preamps · · · · · 16 Description of terms · · · · · · · · · · · · · · · · · · · · · · 20
Selection guide
Spectral response range
Hamamatsu provides a wide lineup of InGaAs photodiodes with different spectral response characteristics ranging from 0.5 μm to 2.6 μm.
Spectral response (typical example)

(Typ. Ta=25 °C)
1.4
Long
wavelength
Long wavelength type InGaAs (to 2.1 μm) type InGaAs
1.2
(to 2.6 μm)
Short-wavelength
enhanced type InGaAs
Photosensitivity (A/W)
1.0
Long wavelength
0.8 type InGaAs (to 1.9 μm)
Si photodiode
0.6 S1337-BR type
0.4
Standard
0.2 type InGaAs
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Wavelength (μm) KIRDB0477EC
Cutoff wavelength temperature dependence (typical example)

(Typ.)
1.4
Ta=25 °C Long wavelength
Tchip=-10 °C type InGaAs
1.2 Tchip=-20 °C (to 2.6 μm)
Standard type InGaAs
Long
Photosensitivity (A/W)
1.0
wavelength
type InGaAs
0.8 (to 1.9 μm)
0.6
0.4
Long wavelength
0.2
type InGaAs
(to 2.1 μm)
0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Wavelength (μm) KIRDB0478EC

3 InGaAs photodiodes
InGaAs PIN photodiodes
Spectral response range (μm)
Type Type no. Page
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Short-wavelength G10899 series Non-cooled type (0.5 to 1.7 μm)
enhanced type 9
G12180/G8370 series
Non-cooled type (0.9 to 1.7 μm)
G11193 series
G8941 series
COB G13176 series One-stage TE-cooled type (0.9 to 1.67 μm)
Standard G6849 series 10
type
G7150/G7151-16
Array
G8909-01 Two-stage TE-cooled type (0.9 to 1.65 μm)
G12430 series
(1.31 μm)
ROSA G12072-54 11
One-stage TE-cooled type (0.9 to 1.87 μm)

to 1.9 μm G12181 series 11
Two-stage TE-cooled type (0.9 to 1.85 μm)

Long
wavelength to 2.1 μm G12182 series
type Two-stage TE-cooled type (0.9 to 2.05 μm)
12 Non-cooled type (0.9 to 2.6 μm)

to 2.6 μm G12183 series
Two-stage TE-cooled type (0.9 to 2.55 μm)
InGaAs APD
Type Type no. Page
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
APD G8931 series 12 Non-cooled type (0.95 to 1.7 μm)
InGaAs linear image sensors

Type Type no. Page
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
G920X/G9494/ Non-cooled type (0.9 to 1.7 μm)
G10768 series
Standard type G11608 series 13 Non-cooled type (0.5 to 1.7 μm)
G11508 series One-stage TE-cooled type (0.9 to 1.67 μm)
G11135 series 13 Non-cooled type (0.95 to 1.7 μm)
G11620 series 13, 14 One-stage TE-cooled type (0.95 to 1.67 μm)
Back- G13913 series Non-cooled type (0.95 to 1.7 μm)

illuminated type 13
G14006-512DE Non-cooled type (1.12 to 1.9 μm)
G12230-512WB 14 Two-stage TE-cooled type (0.95 to 2.15 μm)
to 1.85 μm G11475 series Two-stage TE-cooled type (0.9 to 1.85 μm)
Long to 2.05 μm G11476-256W Two-stage TE-cooled type (0.9 to 2.05 μm)

wavelength 14
type
InGaAs area image sensor

Type Type no. Page
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
G11097-0606S One-stage TE-cooled type (0.95 to1.7 μm)
G12460-0606S One-stage TE-cooled type (1.12 to1.9 μm)
Standard type G12242-0707W 14

Two-stage TE-cooled type (0.95 to1.7 μm)
G13393 series
G13441-01 Two-stage TE-cooled type (1.3 to2.15 μm)
InGaAs photodiodes 4
Response speed
InGaAs PIN photodiodes [Cutoff frequency, Photosensitive area (unit: mm)]

Cutoff frequency (MHz)
Type Type no. Page
20 40 60 80 100 500 1000 2000 3000 4000 5 G10 G
Short-wavelength G10899 series
enhanced type ϕ3 ϕ2 ϕ1 ϕ0.5 ϕ0.3
9
G12180/G8370 series ϕ5,3,2 ϕ1 ϕ0.5 ϕ0.3
G11193 series ϕ1 ϕ0.3 ϕ0.2
G8941 series ϕ1 ϕ0.5 ϕ0.3
COB G13176 series ϕ1 ϕ0.3

type ϕ2/4-element ϕ1/4-element
G7150/G7151-16 0.45 × 1 0.08 × 0.2

Array
G8909-01 ϕ0.08
G12430 series 0.45 × 1 0.2 × 1
ROSA G12072-54 ϕ0.03

11
to 1.9 μm G12181 series ϕ3,2,1 ϕ0.5 ϕ0.3
Long
wavelength to 2.1 μm G12182 series ϕ3,2,1 ϕ0.5 ϕ0.3
type 12
to 2.6 μm G12183 series ϕ3,2,1 ϕ0.5 ϕ0.3
InGaAs APD [Cutoff frequency, Photosensitive area (unit: mm)]

Cutoff frequency (MHz)
Type Type no. Page
20 40 60 80 100 500 1000 2000 3000 4000 5 G10 G
APD G8931 series 12 ϕ0.2 ϕ0.04
InGaAs linear image sensors [Line rate, Number of pixels]

Line rate (lines/s)*1
Type Type no. Page
500 1000 5000 10000 50000
G920X series 512 ch*2 256 ch
G9494 series 512 ch*2 256 ch

Standard type 13
G10768 series 1024 ch
G11508/G11608 series 512 ch*2 256 ch
G11135 series 13 512 ch 256 ch
G11620 series 13, 14 512 ch 256 ch 128 ch

Back-
illuminated type G13913 series 13
256 ch 128 ch
G14006-512DE 512 ch
G12230 series 14 512 ch
to 1.85 μm G11475 series 512 ch*2 256 ch
Long to 2.05 μm G11476-256W 256 ch

wavelength 14
type to 2.15 μm G11477 series 512 ch*2 256 ch
to 2.55 μm G11478 series 512 ch*2 256 ch
*1: When the integration time is set to the minimum value. *2: When two video lines are used for readout, the line rate is equal to that for 256 channels.
InGaAs area image sensors [Frame rate, Number of pixels]

Frame rate (frames/s)* 3
Type Type no. Page
500 1000 5000 10000 50000
G11097-0606S,
G12460-0606S 64 × 64 ch
G12242-0707W 128 × 128 ch

Standard type G13393-0808W 14
320 × 256 ch
G13393-0909W 640 × 512 ch
G13441-01 192 × 96 ch
*3: Integration time 1 μs

Selection guide
Packages

Metal
Surface Receptacle
Type Type no. Page Non-cooled One-stage Two-stage Ceramic mount type type
type TE-cooled type TE-cooled type
Short-wavelength enhanced type G10899 series 1 2
9
G12180/G8370 series 1 2 3 3 4
G11193 series 5
G8941 series 10 6
COB G13176 series 7
Standard type G6849 series 8
G7150/G7151-16 9
Array 10
G8909-01 10
G12430 series 11
ROSA G12072-54 11 12
Long to 1.9 μm G12181 series 11 1 3 3
wavelength to 2.1 μm G12182 series 1 3 3

type 12
to 2.6 μm G12183 series 1 3 3
InGaAs APD
Metal
Surface
Type Type no. Page Non-cooled One-stage Two-stage Ceramic mount type
type TE-cooled type TE-cooled type
APD G8931 series 12 13

Metal
Type Type no. Page One-stage Two-stage Ceramic
Non-cooled type TE-cooled type TE-cooled type
G920X/G9494 series 14
G11508 series 15
Standard type 13
G10768 series 16
G11608 series 17
G11135 series 13 18
G11620 series 13, 14 15 18
Back-illuminated type G13913 series 19

13
G14006-512DE 18
G12230-512WB 14 15

Long to 2.05 μm G11476-256W 15
wavelength 14
type to 2.15 μm G11477 series 15
InGaAs area image sensors

Metal
Type Type no. Page One-stage Two-stage Ceramic
Non-cooled type TE-cooled type TE-cooled type
G11097-0606S 20
G12460-0606S 21
Standard type G12242-0707W 14 22
G13393 series 23
G13441-01 23
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16
17 18 19 20 21 22 23
Application examples

Optical
Type Type no. Page Radiation Moisture Gas Spectro- Laser DWDM Optical Distance
power communication
thermometer meter analysis photometry monitor monitor measurement
meter
Short-wavelength enhanced type G10899 series O
9
G12180/G8370 series O O O O O O
G11193 series O
G8941 series O O
COB G13176 series O O
type O
G7150/G7151-16 O
Array
G8909-01 O
G12430 series O
ROSA G12072-54 11 O
to 1.9 μm G12181 series 11 O O O O O
Long
wavelength to 2.1 μm G12182 series O O O O O
type 12
to 2.6 μm G12183 series O O O O
InGaAs APD
Radiation Moisture Gas Spectro- Laser DWDM Optical Optical Distance
Type Type no. Page thermometer meter analysis photometry monitor monitor power communication measurement
meter
APD G8931 series 12 O O

Thermo- Multichannel Non- Foreign DWDM Optical
Type Type no. Page meter spectrophotometry destructive object monitor OCT spectrum
inspection screening analyzer
G920X/G11508 series O O O O O
G9494 series O O
Standard type 13
G10768 series O O O O
G11608 series O O O
G11135 series 13 O O
G11620 series 13, 14 O O O O
Back-illuminated type G13913 series O O O
13
G14006-512DE O O
G12230-512WB 14 O O
to 1.85 μm G11475 series O O O
Long to 2.05 μm G11476-256W O O O
wavelength 14
type to 2.15 μm G11477 series O O O
to 2.55 μm G11478 series O O O

Hyperspectral Thermal image Laser beam Near infrared Foreign object
Type Type no. Page imaging monitor profiler image detection screening
G11097-0606S O O O O O
G11097-0707S O O O O O
G12460-0606S O O O O O
Standard type 14
G12242-0707W O O O O O
G13393 series O O O O O
G13441-01 O O O O O
Selection guide
Application examples of InGaAs photodiodes
Induction heating Optical power meter
Optical fiber
InGaAs PIN
photodiode
InGaAs PIN photodiode

KIRDC0095EA KIRDC0100EA
InGaAs PIN photodiode detects the temperature at the bottom InGaAs PIN photodiode is used to detect the level of near infra-
of a frying pan. red light passing through an optical fiber, etc.
Mini-spectrometer Rangefinder
InGaAs APD
Focusing lens
Transmission grating InGaAs linear

image sensor
Collimating lens
Entrance slit
InGaAs linear image sensor is used in some of our mini-spec- InGaAs APD detects the distance to an object with high speed
trometers. and accuracy.
Grain sorter Hyperspectral imaging
CCD
InGaAs linear
image sensor InGaAs area
image senser
Light source
Light source
Spectroscopy imaging
Spray nozzle
Unwanted Good grains Optical spectrum measurement

grains
Grain sorters irradiate light onto the falling grains and detect the A hyperspectral image of the ground environment is to be ob-
transmitted light to sort out unwanted grains from good ones. tained by using an InGaAs area image sensor from a helicopter,
(InGaAs linear image sensor detects near infrared light, and etc.
CCD detects visible light.)
InGaAs PIN photodiodes, InGaAs APD
Short-wavelength enhanced type Spectral response range
InGaAs PIN photodiodes 0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm
The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While stan-
dard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extend-
ing to 0.5 μm on the shorter wavelength side. A wide spectral range can be detected with a single detector.
Features Applications
Wide spectral response range Spectrophotometry
Low noise, low dark current Radiation thermometers
Large photosensitive area available
(Typ. Ta=25 °C)
Photosensitive Spectral Peak sensitivity Photosensitivity Dark current Cutoff frequency

response range wavelength S ID fc Option
Type no. Cooling area Package Photo
λ λp λ=0.65 μm λ=λp VR=1 V VR=1 V (sold separately)
(mm) (μm) (μm) (A/W) (A/W) (nA) (MHz)
G10899-003K ϕ0.3 0.3 300
G10899-005K ϕ0.5 0.5 150 TO-18
G10899-01K Non-cooled ϕ1 0.5 to 1.7 1.55 0.22 1 1 45 C4159-03
G10899-02K ϕ2 5 10
TO-5
G10899-03K ϕ3 15 5
Standard type Spectral response range
InGaAs PIN photodiodes have large shunt resistance and low noise. A wide variety of packages are available including highly re-
liable metal types and surface mount types.
Low noise, low dark current Laser monitor
Various photosensitive areas available Optical measurement instruments
Optical communications
Metal package (Typ.)
Spectral Peak sensitivity Photosensitivity Dark current Cutoff
Cooling Photosensitive response range wavelength S ID frequency Option
Type no. (measurement area Package Photo
condition) λ λp λ=λp VR=1 V fc (sold separately)
(mm) (μm) (μm) (A/W) (nA) (MHz)
G12180-003A ϕ0.3 0.1*1 600 (VR=5 V)
G12180-005A ϕ0.5 0.15*1 200 (VR=5 V) TO-18
G12180-010A ϕ1 0.8*1 60 (VR=5 V)
G12180-020A ϕ2 1.5 13 (VR=1 V)
TO-5
G12180-030A ϕ3 2.5 7 (VR=1 V)
G12180-050A Non-cooled ϕ5 5 3 (VR=1 V) TO-8
0.9 to 1.7 C4159-03
(Ta=25 °C)
G8370-81*3 ϕ1 1 35 (VR=1 V) TO-18
G8370-82*3 ϕ2 5 4 (VR=1 V)
TO-5
G8370-83*3 ϕ3 1.1 15 2 (VR=1 V)
1.55
G8370-85*3 ϕ5 25*4 0.6 (VR=0 V) TO-8
G12180-110A ϕ1 0.02 40 (VR=1 V)
G12180-120A One-stage ϕ2 0.1 13 (VR=1 V) C4159-03
TE-cooled 0.9 to1.67 A3179
G12180-130A (Tchip*2=-10 °C) ϕ3 0.15 7 (VR=1 V) C1103-04
G12180-150A ϕ5 0.33 3 (VR=1 V)
TO-8
G12180-210A ϕ1 0.01 40 (VR=1 V)
G12180-220A Two-stage ϕ2 0.04 13 (VR=1 V) C4159-03
TE-cooled 0.9 to 1.65 A3179-01
G12180-230A (Tchip=-20 °C) ϕ3 0.07 7 (VR=1 V) C1103-04
G12180-250A ϕ5 0.15 3 (VR=1 V)
Non-cooled 0.08*1 TO-18
G6854-01 (Ta=25 °C) ϕ0.08 0.9 to 1.7 0.95 2000 (VR=5 V) with CD lens -
*1: VR=5 V *2: Element temperature *3: Low PDL (polarization dependence loss) type *4: VR=0.1 V
Ceramic package (Typ. Ta=25 °C)
Cutoff
Photosensitive Spectral Peak sensitivity Photosensitivity Dark current frequency
Type no. area response range wavelength S ID fc Package Photo
λ λp λ=λp VR=5 V VR=5 V
200 0.1
G8370-10 ϕ10 0.95 (VR=10 mV) (VR=0 V) -
G11193-02R ϕ0.2 0.04 1000

0.9 to 1.7
Surface
G11193-03R ϕ0.3 1 0.1 500 mount
type
G11193-10R ϕ1 1.55 0.8 60
G8941-01 ϕ1 1 35
Surface
mount
G8941-02 ϕ0.5 0.9 to 1.7 0.95 0.5 200 type
(unsealed)
G8941-03 ϕ0.3 0.3 400
COB (chip on board) package (Typ. Ta=25 °C)

Cutoff
λ λp λ=λp VR=5 V VR=5 V
G13176-003P ϕ0.3 0.1 600 Surface

mount type
0.9 to 1.7 1.55 1
(Ultra-compact
G13176-010P ϕ1 0.8 60 type)
Photodiode arrays (Typ. Ta=25 °C)

Cutoff
λ λp λ=1.55 μm per element VR=1 V
G6849 ϕ2 0.5
30
(quadrant) (VR=1 V)
TO-5
G6849-01 ϕ1 0.15
120
(quadrant) (VR=1 V)
0.45 × 1.0 2.5

G7150-16 (× 16-element) (VR=1 V) 30
Ceramic
G7151-16 0.08 × 0.2 0.1 300
(× 16-element) (VR=1 V)
0.9 to 1.7 1.55 0.95
G8909-01 ϕ0.08 0.02 1000 Ceramic
(× 40-element) (VR=5 V) (VR=5 V) (unsealed)
G12430-016D (× 0.45 × 1.0 0.5 30

16-element) (VR=1 V)
0.2 × 1.0 0.25

G12430-032D (× 32-element) 60 Ceramic
(VR=1 V)
0.2 × 1.0 0.25

G12430-046D (× 46-element) (VR=1 V) 60
ROSA (Typ. Ta=25 °C, Vcc=3.3 V, unless otherwise noted)
Minimum Maximum Optical
Wavelength Responsivity receivable receivable Trans- return loss
Type no. band R Data rate sensitivity sensitivity impedance ORL Photo
Pmin Pmax Tz min.
(μm) (A/W) (Gbps) (dBm) (dBm) (kΩ) (dB)
2.25
G12072-54 1.31 0.8 8.5 to 11.3 -19.5 +5 12
(single end)
Pigtail/receptacle type (InGaAs PIN photodiodes with preamp) (Typ. Ta=25 °C, Vcc=3.3 V, unless otherwise noted)
Minimum Maximum Optical return
Photosensitivity Cutoff receivable receivable Trans- loss
Type no. S frequency sensitivity sensitivity impedance ORL Package Photo
fc Pmin Pmax Tz min.
(V/mW) (GHz) (dBm) (dBm) (kΩ) (dB)
FC board
G9821-22 receptacle
12
FC panel
G9821-32 receptacle
1.8
1.5 2.1 -25.5 +1 min. (single end) Pigtail
G9822-11 coaxial SC
27
Pigtail
G9822-12 coaxial FC
Pigtail/receptacle type (InGaAs PIN photodiodes) (Typ. Ta=25 °C, unless otherwise noted)
Spectral response Peak sensitivity Photosensitivity Dark current Cutoff frequency
range wavelength S ID fc
Type no. Package Photo
λ λp λ=1.55 μm VR=5 V VR=5 V
(μm) (μm) (A/W) (pA) (GHz)
G8195-11 Pigtail coaxial SC
G8195-12 Pigtail coaxial FC

0.9 to 1.7 1.55 0.95 20 2
G9801-22 FC board receptacle
G9801-32 FC panel receptacle
Long wavelength type Spectral response range
These are InGaAs PIN photodiodes whose spectral response range extends up to 2.6 μm. Three groups are available with differ-
ent peak sensitivity wavelengths of 1.75 μm, 1.95 μm, and 2.3 μm. Thermoelectrically cooled, low noise types are also available.
Peak sensitivity wavelength: 1.75 μm (Typ.)

Spectral Peak Cutoff
Cooling Photosensitive response sensitivity Photosensitivity Dark current frequency
S ID Option
Type no. (measurement area range wavelength fc Package Photo
λ=λp VR=0.5 V (sold separately)
condition) λ λp VR=0 V
G12181-003K ϕ0.3 1 90
G12181-005K ϕ0.5 3 35 TO-18
Non-cooled
G12181-010K ϕ1 0.9 to 1.9 10 10 C4159-03
(Ta=25 °C)
G12181-020K ϕ2 50 2.5
TO-5
G12181-030K ϕ3 100 1.5
G12181-103K ϕ0.3 0.1 140
G12181-105K One-stage ϕ0.5 0.3 50 C4159-03
G12181-110K TE-cooled ϕ1 0.9 to 1.87 1.75 1.1 1 16 TO-8 A3179
G12181-120K (Tchip=-10 °C) ϕ2 5 3.5 C1103-04
G12181-130K ϕ3 10 1.8
G12181-203K ϕ0.3 0.05 150
G12181-205K Two-stage ϕ0.5 0.15 53 C4159-03
G12181-210K TE-cooled ϕ1 0.9 to 1.85 0.5 17 TO-8 A3179-01
G12181-220K (Tchip=-20 °C) ϕ2 2.5 3.7 C1103-04
G12181-230K ϕ3 5 1.9
InGaAs PIN photodiodes, InGaAs APD
Spectral Peak Photo- Cutoff
Cooling Photosensitive response sensitivity sensitivity Dark current frequency
I D Option
Type no. (measurement area range wavelength S fc Package Photo
VR=0.5 V (sold separately)
condition) λ λp λ=λp VR=0 V
G12182-003K ϕ0.3 10 90
G12182-005K ϕ0.5 20 35 TO-18
Non-cooled
G12182-010K ϕ1 0.9 to 2.1 100 10 C4159-03
(Ta=25 °C)
G12182-020K ϕ2 500 2.5
TO-5
G12182-030K ϕ3 1000 1.5
G12182-103K ϕ0.3 1 140
G12182-105K One-stage ϕ0.5 3 50 C4159-03
G12182-110K TE-cooled ϕ1 0.9 to 2.07 1.95 1.2 10 16 TO-8 A3179
G12182-120K (Tchip=-10 °C) ϕ2 50 3.5 C1103-04
G12182-130K ϕ3 100 1.8
G12182-203K ϕ0.3 0.5 150
G12182-205K Two-stage ϕ0.5 1.5 53 C4159-03
G12182-210K TE-cooled ϕ1 0.9 to 2.05 5 17 TO-8 A3179-01
G12182-220K (Tchip=-20 °C) ϕ2 25 3.7 C1103-04
G12182-230K ϕ3 50 1.9

Spectral Peak Photo- Cutoff
Cooling Photosensitive response sensitivity sensitivity Dark current frequency
I D Option
Type no. (measurement area range wavelength S fc Package Photo
VR=0.5 V (sold separately)
condition) λ λp λ=λp VR=0 V
(mm) (μm) (μm) (A/W) (μA) (MHz)
G12183-003K ϕ0.3 0.4 50
G12183-005K ϕ0.5 1 20 TO-18
Non-cooled
G12183-010K ϕ1 0.9 to 2.6 3 6 C4159-03
(Ta=25 °C)
G12183-020K ϕ2 10 1.5
TO-5
G12183-030K ϕ3 30 0.8
G12183-103K ϕ0.3 0.12 70
G12183-105K One-stage ϕ0.5 0.3 25 C4159-03
G12183-110K TE-cooled ϕ1 0.9 to 2.57 2.3 1.3 0.9 7 TO-8 A3179
G12183-120K (Tchip=-10 °C) ϕ2 3 2 C1103-04
G12183-130K ϕ3 9 0.9
G12183-203K ϕ0.3 0.085 75
G12183-205K Two-stage ϕ0.5 0.21 28 C4159-03
G12183-210K TE-cooled ϕ1 0.9 to 2.55 0.65 8 TO-8 A3179-01
G12183-220K (Tchip=-20 °C) ϕ2 2.1 2.3 C1103-04
G12183-230K ϕ3 6 1

InGaAs APD
0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm
These are InGaAs APDs designed for distance measurement, FSO, low-light-detection, and optical communication, etc. The
G8931-20 of large photosensitive area ϕ0.2 mm is also available.
(Typ. Ta=25 °C)
Spectral Peak Photosensitivity Cutoff
Photosensitive response sensitivity S Dark current frequency
Type no. Cooling area range wavelength λ=1.55 μm ID fc Package Photo
λ λp M=1 VR=VBR × 0.9 M=10
(mm) (μm) (μm) (A/W) (nA) (GHz)
G8931-04 ϕ0.04 40 4
G8931-10 Non-cooled ϕ0.1 0.95 to 1.7 1.55 0.9 90 1.5 TO-18
G8931-20 ϕ0.2 150 0.9
InGaAs image sensors
InGaAs linear image sensors are comprised of an InGaAs photodiode array with high sensitivity in the near infrared region,
charge amplifier arrays, an offset compensation circuit, a shift register, and a timing generator. The signal from each pixel is read
out in charge integration mode. The G11135/G11620/G12230 series use a back-illuminated structure to allow signal readout from
a single video line.
0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm

Standard type (Typ. unless otherwise noted)
Spectral Photo- Dark
Cooling Pixel Number Photosensitive response sensitivity current Defective Applicable
Type no. (measurement pitch of area range S ID pixels Photo driver circuit
condition) pixels λ λ=λp Ta=25 °C max. (sold separately)
(μm) (mm × mm) (μm) (A/W) (pA) (%)
Non-cooled
G9203-256D 0.9 to 1.7 0.95 4
(Ta=25 °C)
50 256
One-stage
G11508-256SA TE-cooled 0.9 to 1.67 1.0 ±1
(Tchip=-10 °C)
12.8 × 0.5 0 -
Non-cooled
G9204-512D 0.9 to 1.7 0.95 1
(Ta=25 °C)
25 512
One-stage
G11508-512SA TE-cooled 0.9 to 1.67 1.0 ±0.5
(Tchip=-10 °C)
G9494-256D 50 256 12.8 × 0.05 4

Non-cooled 0.9 to 1.7 0.95 1 C10820
(Ta=25 °C)
G9494-512D 25 512 12.8 × 0.025 1
G10768-1024D Non-cooled 25.6 × 0.1

25 1024 0.9 to 1.7 0.95 ±1 1 C10854
G10768-1024DB (Ta=25 °C) 25.6 × 0.025
G11608-256DA 50 256 ±1
Non-cooled 12.8 × 0.5 0.5 to 1.7 1.0 1 -
(Ta=25 °C)
G11608-512DA 25 512 ±0.5
Back-illuminated type Spectral response range

These linear image sensors use a back-illuminated type InGaAs photodiode array
0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm
that is bump-connected to a CMOS-ROIC with a single output terminal. (Typ. unless otherwise noted)
Spectral Photo-
Pixel Photosensitive response sensitivity Dark current Defective Applicable
Type no. Cooling pitch Number area range S ID pixels Photo driver circuit
of pixels Ta=25 °C max.
λ λ=λp (sold separately)
(μm) (mm × mm) (μm) (A/W) (pA) (%)
G11135-256DD 50 256 12.8 × 0.05
±0.2 C11514
G11135-512DE 25 512 12.8 × 0.025
G11620-256DA 50 256
12.8 × 0.5
G11620-512DA 25 512
0.95 to 1.7 0.82 ±0.5 C11513
G11620-128DA Non- 50 128
cooled 6.4 × 0.5 1
G11620-256DF (Ta=25 °C) 25 256
G13913-128FB 50 128
6.4 × 0.25 ±1 -
G13913-256FG 25 256
G14006-512DE 25 512 12.8 × 0.025 1.12 to 1.9 1.05 ±2 C11514
Spectral Photo-
Pixel Photosensitive response sensitivity Dark current Defective Applicable
Type no. Cooling pitch Number area range S ID pixels Photo driver circuit
of pixels λ λ=λp Ta=25 °C max. (sold separately)
(μm) (mm × mm) (μm) (A/W) (pA) (%)
G11620-256SA One-stage 50 256
TE-cooled 12.8 × 0.5 0.95 to 1.67 0.82 ±0.5 1 -
G11620-512SA (Tchip=-10 °C) 25 512
Two-stage 0.95 to 1.65*1 0.82*1 ±0.2*1
G12230-512WB TE-cooled 25 512 12.8 × 0.25 2 -
(Tchip=-20 °C) 1.4 to 2.15*2 1.0*2 5*2
*1: 1 to 254 ch (Tchip=-20 °C) *2: 259 to 512 ch (Tchip=-20 °C)
0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm

Long wavelength type (Typ. unless otherwise noted)
Spectral Photo-
Cooling Pixel Number Photosensitive response sensitivity Dark current Defective Applicable
condition) pixels λ λ=λp Tchip=-20 °C max. (sold separately)
(μm) (mm × mm) (μm) (A/W) (pA) (%)
G11475-256WB 50 256 5
0.9 to 1.85 1.1 ±2
G11475-512WB 25 512 4
G11476-256WB 50 256 0.9 to 2.05 ±4 5

Two-stage
G11477-256WB TE-cooled 50 256 12.8 × 0.25 1.2 5 -
(Tchip=-20 °C) 0.9 to 2.15 ±5
G11477-512WB 25 512 4
G11478-256WB 50 256 5
0.9 to 2.55 1.3 ±100
G11478-512WB 25 512 4

0.5 μm 1.0 μm 1.5 μm 2.0 μm 2.5 μm
InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and
a back-illuminated type InGaAs photodiode area array.
(Typ. unless otherwise noted)
Spectral Photo-
Cooling Pixel Number Photosensitive response sensitivity Dark current Defective Applicable
condition) pixels λ λ=λp max. (sold separately)
(μm) (mm × mm) (μm) (A/W) (pA) (%)
One-stage
G11097-0606S TE-cooled 2
0.95 to 1.7 0.8 (Tchip=25 °C)
(Tchip=25 °C)
50 64 × 64 3.2 × 3.2 1 C11512
One-stage
G12460-0606S TE-cooled 8
1.12 to 1.9 1.1 (Tchip=0 °C)
(Tchip=0 °C)
G12242-0707W 128 × 128 2.56 × 2.56 1 C11512-02
Two-stage
G13393-0808W TE-cooled 20 320 × 256 6.40 × 5.12 0.95 to 1.7 0.5
0.8 (Tchip=15 °C)
(Tchip=15 °C)
0.37
G13393-0909W 640 × 512 12.8 × 10.24 -
Two-stage 30
G13441-01 TE-cooled 50 192 × 96 9.6 × 4.8 1.3 to 2.15 1 1
(Tchip=-20 °C)
(Tchip=-20 °C)
Related products
Two-color detectors
Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted
over the other sensor along the same optical axis to provide a broad spectral response range. As the combination of two light
sensors, an infrared-transmitting Si photodiode and an InGaAs PIN photodiode (standard type or long wavelength type) or an in-
frared-transmitting InGaAs PIN photodiode (standard type) and an InGaAs PIN photodiode (long wavelength type) are available.
Thermoelectrically cooled two-color detectors are also provided that cool the sensors to maintain their temperatures constant,
allowing high precision measurement with an improved S/N.
Wide spectral response range Spectrophotometers
Simultaneously detects light of multiple Radiation thermometer
wavelengths in the same optical path Flame monitor
High S/N (One-stage TE-cooled type) Laser monitor
(Typ.)
Spectral Peak Photo- Cutoff frequency
Cooling Photosensitive response sensitivity sensitivity fc Option
Type no. (measurement Detector area range wavelength S VR=0 V Package Photo (sold
condition) λ λp λ=λp RL=1 kΩ separately)
(mm) (μm) (μm) (A/W) (MHz)
Si 2.4 × 2.4 0.94 0.45 1.75
K1713-05 0.32 to 1.7
InGaAs ϕ0.5 1.55 0.55 200
Si 2.4 × 2.4 0.94 0.45 1.75 C9329
K1713-08 0.32 to 2.6
InGaAs ϕ1 2.3 0.60 6*1 C4159-03
Non-cooled Si 2.4 × 2.4 0.94 0.45 1.75
K1713-09 (Ta=25 °C) 0.32 to 1.7 TO-5
InGaAs ϕ1 1.55 0.55 50
InGaAs 2.4 × 2.4 1.55 0.95 2* 1
K11908-010K 0.9 to 2.55
InGaAs ϕ1 2.1 1.0 6*1
C4159-03
InGaAs 2.4 × 2.4 1.55 0.95 2
K13085-010K 0.9 to 1.85
InGaAs ϕ1 1.75 0.8 10
Si 2.4 × 2.4 0.94 0.45 1.75
K3413-05 0.32 to 1.67
InGaAs ϕ0.5 1.55 0.55 200 C9329
One-stage Si 2.4 × 2.4 0.94 0.45 1.75
TE-cooled C4159-03
K3413-08 0.32 to 2.57 TO-8
(Tchip=-10 °C) InGaAs ϕ1 2.3 0.60 15 A3179-03
Si 2.4 × 2.4 0.94 0.45 1.75 C1103-04
K3413-09 0.32 to 1.67
InGaAs ϕ1 1.55 0.55 50
Si 2.4 × 2.4 0.96 0.45 2*1
K12728-010K 0.32 to 1.65 -
Non-cooled InGaAs ϕ1 1.55 0.55 10*1
(Ta=25 °C) Ceramic
InGaAs 2.4 × 2.4 1.55 0.95 2*1
K12729-010K 0.9 to 2.55 1 -
InGaAs ϕ1 2.1 1.0 6*
*1: VR=0 V, RL=50 Ω
Infrared detector modules with preamps
These are infrared detector modules using an InGaAs PIN photodiode and a preamp integrated into a compact case. Thermo-
electrically cooled types and liquid nitrogen cooled types are provided for applications requiring low noise. Custom products are
also available with different spectral response ranges, time response characteristics, and gains.
Easy to use Various infrared detections
Just connecting it to a DC power supply provides a voltage
output that varies with the incident light level.
Compact size
Low noise, high sensitivity (TE-cooled type, liquid nitrogen
cooled type)
(Typ.)
Cutoff Peak sensitivity Photosensitivity
Cooling Photosensitive wavelength wavelength S
Type no. Detector (measurement area Photo
condition) λc λp λ=λp
(mm) (μm) (μm) (V/W)
Non-cooled
G6121 G8370-05 ϕ5 1.7 1.55 1 × 106
(Ta=25 °C)
C12483-250 G12180-250A ϕ5 1.66 1.55 5 × 107

TE-cooled 1.8 × 108
C12485-210 G12182-210K
(Tchip=-15 °C) ϕ1 2.05 1.95
C12486-210 G12183-210K ϕ1 2.56 2.3 2 × 108
G7754-01 G12183-010 (chip) ϕ1 2 × 109

Liquid nitrogen 2.4 2.0
(Tchip=-196 °C)
G7754-03 G12183-030 (chip) ϕ3 5 × 108
Options
A variety of options are provided to facilitate using InGaAs photodiodes.
Connection example
*1
Power supply (±15 V)
POWER
OUT
*2 Measurement instrument
TE-cooled
detector*3
Amplifier for infrared detector
C4159-03
Heatsink for
TE-cooled Power suppy
detector (100 V, 115 V, 230 V)
A3179 series
ûC
Temperature controller
C1103-04
KIRDC0101EC
Cable no. Cable Approx. length Note

Coaxial cable Supplied with heatsink A3179 series.
2m
(for signal, no connector) When using this cable, make it as short as possible (preferably about 10 cm).
4-conductor cable (with a connector) Supplied with temperature controller C1103-04.
3m
A4372-05 This cable is also sold separately.
Supplied with the C4159-03 amplifier for infrared detector, and infrared
detector modules with preamps (non-cooled type).
4-conductor cable (with a connector)
2m This cable is also sold separately. The A4372-03, which is a 6-conductor
A4372-02 cable (with connector) supplied with infrared detector module with
preamp (non-cooled type), is also sold separately.
BNC connector cable E2573 1m Option
Power supply cable (for temperature controller) 1.9 m Supplied with temperature controller C1103-04
*1: Attach the bare wire end to a 3-pin or 4-pin connector or to a banana plug, and then connect them to the power supply.
*2: Soldering is needed.
*3: No socket is available. Soldering is needed.
Amplifier for infrared detectors For InGaAs PIN photodiode
The C4159-03 is a low noise amplifier for InGaAs PIN photodiodes.
Features Accessories
Low noise Instruction manual
3 ranges switchable Power cable A4372-02
(one end with 4-pin connector for connection to amplifier and
Specification the other end unterminated, 2 m)
(Typ.)
Parameter Condition Specification Unit Photo
Applicable detector*4 *5 InGaAs -
Conversion impedance 107, 106, 105 (3 ranges switchable) V/A
Frequency response Amp only, -3 dB DC to 15 kHz -
Output impedance 50 Ω
Maximum output voltage 1 kΩ load +10 V
Output offset voltage ±5 mV
Equivalent input noise current f=1 kHz 2.5 pA/Hz1/2
Reverse voltage Can be applied from external unit -
External power supply*6 ±15 V
Current consumption ±15 max. mA
Note: A power supply is needed to use this amplifier.
*4: These amplifiers cannot operate multiple detectors.
*5: Consult us before purchasing if you want to use with a detector other than listed here.
*6: Recommended DC power supply (analog power supply): ±15 V
Current capacity: more than 1.5 times the maximum current consumption
Ripple noise: 5 mVp-p or less
Heatsinks for TE-cooled detectors For InGaAs PIN photodiode and two-color detector
The A3179 series heatsinks are designed specifically for thermoelectrically cooled infrared detectors. When used at an ambient
temperature of 25 °C, the A3179 and A3179-03 provide a temperature difference (ΔT) of about 35 °C and the A3179-01 provides
a temperature difference (ΔT) of about 40 °C.
Features Accessories
A3179: for one-stage TE-cooled type Instruction manual
A3179-01: for two-stage TE-cooled type 4-conductor cable (no connector, 2 m): for TE-cooler and thermistor*7 *8
A3179-03: for two-color detector K3413 series Coaxial cable (2 m): for signal*7
Compact size
Note:
*7: When used in combination with the C1103-04 temperature controller, do
not use the 4-conductor cable supplied with the A3179 series, but use the
4-conductor cable A4372-05 (sold separately, with a connector).
*8: No socket is supplied for connection to infrared detectors. Connect infra-
red detectors by soldering. Cover the soldered joints and detector pins
with vinyl insulating tubes.
A3179-01
Temperature controller For InGaAs PIN photodiode
The C1103-04 is a temperature controller designed for TE-cooled infrared detectors. The C1103-04 allows temperature setting for
the TE-cooler mounted in an infrared detector.
Accessories
Instruction manual
4-conductor cable A4372-05 (with a connector, 3 m): for TE-cooler and thermistor*9
Power supply cable
Specifications
Parameter Specification Photo
Applicable detector*10 One-stage /two-stage TE-cooled InGaAs PIN photodiode
Setting element temperature -30 to +20 °C
Temperature stability within ±0.1 °C
Output current for temperature control 1.1 A min., 1.2 A typ., 1.3 A max.
Power supply 100 V ± 10% ∙ 50/60 Hz*11
Power consumption 30 W
Dimensions 107 (W) × 84 (H) × 190 (D) mm
Weight Approx. 1.9 kg
*9: When used in combination with the A3179 series heatsink, do not use an 4-conductor cable supplied with the A3179 series, but use the A4372-05 instead.
*10: This temperature controller does not support TE-cooled infrared detector modules with preamps and cannot set temperatures on two or more TE-coolers.
*11: Please specify power supply requirement (AC line voltage) from among 100 V, 115 V and 230 V when ordering.
Multichannel detector heads For InGaAs image sensor
Multichannel detector head for InGaAs linear image sensor (G10768 series) C10854
The C10854 is a multichannel detector head designed for applications such as sorting machines and SD-OCT (spectral domain-opti-
cal coherence tomography) where high-speed response is essential. The C10854 is optimized for use with the G10768 series InGaAs
linear image sensors and controllable from a PC by using the supplied application software (DCam-CL) that runs on Windows 7 (32-bit,
64-bit) /10 (32-bit, 64-bit).
High-speed operation: 5 MHz Near infrared multichannel spectroscopy
Line rate: 31.25 kHz Foreign object screening
Supports CameraLink OCT (optical coherence tomography)
Type no. Interface Output Photo Applicable sensor (sold separately)
C10854 CameraLink Digital G10768-1024D, G10768-1024DB
Multichannel detector heads for InGaAs area image sensors (G11097/G12460-0606S, G12242-0707W) C11512 series
The C11512 series is a multichannel detector head designed for the G11097/G12460-0606S, G12242-0707W InGaAs area image sen-
sors. The C11512 series supports a variety of near infrared imaging applications and is controllable from a PC by using the supplied
application software (DCam-CL) that runs on Windows 7 (32-bit, 64-bit) /10 (32-bit, 64-bit).
Built-in temperature control circuit Thermal imaging
[Tchip=10 °C typ. (Ta=25 °C)] Laser beam profiler
Supports CameraLink Foreign object inspection
Compact size
External trigger input
Adjustable offset and gain
Pulse output setting
Type no. Interface Output Photo Applicable sensor (sold separately)
C11512 G11097-0606S, G12460-0606S

CameraLink Digital
C11512-02 G12242-0707W
Driver circuits For InGaAs image sensor
Type no. Features Photo Applicable sensor
G9494-256D
C10820 High gain setting suitable for low-level-light G9494-512D
G11620-128DA
G11620-256DF
C11513 USB 2.0 interface (USB bus power) G11620-256DA
G11620-512DA
G11135 series
C11514 Supports CameraLink G14006-512DE
Connection example (C10820)
I/O connector: D-sub 15-pin type

Signal name Pin no.
Coaxial cable
NC 1
A.GND 9 CH.1 Oscilloscope
VIDEO DATA 2 EXT.TRIG
A.GND 10 A.GND
Power supply
+15 V 3 +15 V
Ex: PW18-1T
NC 11 -15 V
made by
TEXIO CORPORATION
-15 V 4 +5 V
D.GND 12 D.GND
+5 V 5 +5 V
D.GND 13 D.GND
START 6 Start Pulse generator
D.GND 14 D.GND
M-CLK 7 CLK
TRIGGER 15 A/D TRIG
D.GND
EOS 8 VIDEO Data processing board/PC
GND
KACCC0499EB
Description of terms
Spectral response Terminal capacitance: Ct
The relation (photoelectric sensitivity) between the incident In a photodiode, the PN junction can be considered as a
light level and resulting photocurrent differs depending on type of capacitor. This capacitance is termed the junction
the wavelength of the incident light. This relation between capacitance and is an important parameter in determining
the photoelectric sensitivity and wavelength is referred to the response speed. In current-to-voltage conversion circuits
as the spectral response characteristic and is expressed in using an op amp, the junction capacitance might cause
terms of photosensitivity or quantum efficiency. gain peaking. At HAMAMATSU, we specify the terminal
Photosensitivity: S capacitance including this junction capacitance plus the
package stray capacitance.
The ratio of photocurrent expressed in amperes (A) or output
voltage expressed in volts (V) to the incident light level expressed Rise time: tr
in watts (W). Photosensitivity is represented as an absolute The rise time is the time required for the output to rise from
sensitivity (A/W or V/W) or as a relative sensitivity (%) to the 10% to 90% of the maximum output value (steady-state
peak wavelength sensitivity normalized to 100. We usually define value) in response to input of step-function light.
the spectral response range as the range in which the relative Cutoff frequency: fc
sensitivity is higher than 5% or 10% of the peak sensitivity.
This is the measure used to evaluate the time response of
Quantum efficiency: QE high-speed PIN photodiodes to a sinewave-modulated light
This is the number of electrons or holes that can be extracted input. It is defined as the frequency at which the photodiode
as photocurrent divided by the number of incident photons. output decreases by 3 dB from the output at 100 kHz. The
It is commonly expressed in percent (%). The quantum light source used is a laser diode (1.3 μm or 1,55 μm) and the
efficiency QE and photosensitivity S (unit: A/W) have the load resistance is 50 Ω. The rise time tr has a relation with
following relationship at a given wavelength (unit: nm). the cutoff frequency fc as follows:
0.35
tr [s]=
fc [Hz]
Short circuit current: Isc
Noise equivalent power: NEP
This is the output current that flows in a photodiode when
load resistance is zero. This is called "white light sensitivity" NEP is the incident light level equivalent to the noise level of
to differentiate it from the spectral response, and is a device. In other words, it is the light level required to obtain
measured with light from a standard tungsten lamp at 2856 a signal-to-noise ratio (S/N) of 1. We define the NEP value at
K distribution temperature (color temperature). Our product the peak sensitivity wavelength (λp). Since the noise level is
catalog lists the short circuit current measured under an proportional to the square root of the frequency bandwidth,
the bandwidth is normalized to 1 Hz.
illuminance of 100 lx.
Peak sensitivity wavelength: λp
This is the wavelength at which the photosensitivity of the
detector is at maximum. Reverse voltage: VR max
A p p l y i n g a r eve r s e vo l t a g e t o a p h o t o d i o d e t r i g g e r s
Cutoff wavelength: λ c
a b r e a k d ow n a t a c e r t a i n vo l t a g e a n d c a u s e s s eve r e
This represents the long wavelength limit of spectral deterioration of the device performance. Therefore the
response and in datasheets is listed as the wavelength at absolute maximum rating is specified for reverse voltage at
which the sensitivity becomes 10% of the value at the peak the voltage somewhat lower than this breakdown voltage.
sensitivity wavelength. The reverse voltage shall not exceed the maximum rating,
Dark current: ID even instantaneously.
A small current which flows when a reverse voltage is applied
to a photodiode even in a dark state. This current is called Reference (Physical constants relating to light and opto-semiconductors)
the dark current. Noise resulting from dark current becomes
dominant when a reverse voltage is applied to photodiodes (PIN Constant Symbol Numerical value Unit
photodiodes, etc.). Electron charge q 1.602 × 10-19 C
Shunt resistance: Rsh Speed of light in vacuum c 2.998 × 108 m/s
This is the voltage/current ratio of a photodiode operated in Planck's constant h 6.626 × 10-34 J·s
the vicinity of 0 V. In our product catalog, the shunt resistance Boltzmann's constant k 1.381 × 10-23 J/K
is specified by the following equation, where the dark current Thermal energy at room kT 0.0259 (300 K) eV
(ID) is a value measured at a reverse voltage of 10 mV. temperature
Energy of 1eV eV 1.602 × 10-19 J
Wavelength equivalent to - 1240 nm
1 eV in vacuum
Noise generated from the shunt resist ance becomes 10-12
Permittivity of vacuum εo 8.854 × F/m
dominant in applications where a reverse voltage is not
Band gap energy of silicon Eg Approx. 1.12 (25 °C) eV
applied to the photodiode.
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Products manufactured by Hamamatsu Photonics K.K. (hereafter “Hamamatsu”) are intended for use in general-use electronic
devices (such as measurement equipment, office equipment, information communications equipment, household appliances,
etc.). Unless an exception to the following is stated in the documentation of a specific product, Hamamatsu products are not to
be used for special applications which demand extremely high reliability or safety (such as equipment for nuclear power control,
aerospace equipment, medical equipment and transportation equipment that directly affect human life, or disaster prevention or
safety equipment).
Hamamatsu products should not be used in excess of their absolute maximum ratings. Attention must be paid to all documented
precautions.
Hamamatsu continually makes efforts to improve the quality and reliability of its products; however these efforts cannot ensure
100% compliance with the manufacturing specifications. Sufficient safety design (such as redundant safety, fire preventative, and
malfunction preventative features) are to be implemented in the development of equipment manufactured with the Hamamatsu
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
Main Products Sales Offices

Si photodiodes
Japan: France, Portugal, Belgium, Switzerland, Spain:
APD HAMAMATSU PHOTONICS K.K. HAMAMATSU PHOTONICS FRANCE S.A.R.L.
MPPC 325-6, Sunayama-cho, Naka-ku, Main Office
Hamamatsu City, Shizuoka Pref. 430-8587, Japan 19, Rue du Saule Trapu, Parc du Moulin de Massy,
Photo IC Telephone: (81)53-452-2141, Fax: (81)53-456-7889 91882 Massy Cedex, France
Image sensors E-mail: intl-div@hq.hpk.co.jp Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
E-mail: infos@hamamatsu.fr
PSD China:
Infrared detectors HAMAMATSU PHOTONICS (CHINA) Co., Ltd. Swiss Office
Main Office Dornacherplatz 7, 4500 Solothurn, Switzerland
LED 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Telephone: (41)32-625-60-60, Fax: (41)32-625-60-61
Optical communication devices Chaoyang District, 100020 Beijing, China E-mail: swiss@hamamatsu.ch
Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866
Automotive devices E-mail: hpc@hamamatsu.com.cn Belgian Office
X-ray flat panel sensors Axisparc Technology, rue Andre Dumont 7
Shanghai Branch 1435 Mont-Saint-Guibert, Belgium
Mini-spectrometers 4905 Wheelock Square, 1717 Nanjing Road West, Telephone: (32)10 45 63 34, Fax: (32)10 45 63 67
Opto-semiconductor modules Jingan District, 200040 Shanghai, China E-mail: info@hamamatsu.be
Telephone: (86)21-6089-7018, Fax: (86)21-6089-7017
Spanish Office
Taiwan: C. Argenters, 4 edif 2 Parque Tecnológico del Vallés
Hamamatsu also supplies: HAMAMATSU PHOTONICS TAIWAN Co., Ltd. 08290 Cerdanyola (Barcelona), Spain
Photoelectric tubes Main Office Telephone: (34)93 582 44 30, Fax: (34)93 582 44 31
Imaging tubes 8F-3, No.158, Section2, Gongdao 5th Road, E-mail: infospain@hamamatsu.es
East District, Hsinchu, 300, Taiwan R.O.C.
Light sources Telephone: (886)03-659-0080, Fax: (886)03-659-0081 Germany, Denmark, The Netherlands, Poland:
E-mail: info@tw.hpk.co.jp HAMAMATSU PHOTONICS DEUTSCHLAND GmbH
Imaging and processing systems Main Office
Kaohsiung Office Arzbergerstr. 10, D-82211 Herrsching am Ammersee,
No.6, Central 6th Road, K.E.P.Z. Kaohsiung 806, Germany
Taiwan R.O.C. Telephone: (49)8152-375-0, Fax: (49)8152-265-8
Telephone: (886)07-262-0736, Fax: (886)07-811-7238 E-mail: info@hamamatsu.de
U.S.A.: Danish Office
HAMAMATSU CORPORATION Lautruphøj 1-3, DK-2750 Ballerup, Denmark
Main Office Telephone: (45)70 20 93 69, Fax: (45)44 20 99 10
360 Foothill Road, Bridgewater, NJ 08807, U.S.A. Email: info@hamamatsu.dk
Telephone: (1)908-231-0960, Fax: (1)908-231-1218
E-mail: usa@hamamatsu.com Netherlands Office
Televisieweg 2, NL-1322 AC Almere, The Netherlands
California Office Telephone: (31)36-5405384, Fax: (31)36-5244948
2875 Moorpark Ave. San Jose, CA 95128, U.S.A. E-mail: info@hamamatsu.nl
Telephone: (1)408-261-2022, Fax: (1)408-261-2522
E-mail: usa@hamamatsu.com Poland Office
02-525 Warsaw, 8 St. A. Boboli Str., Poland
Chicago Office Telephone: (48)22-646-0016, Fax: (48)22-646-0018
4711 W.Golf Road, Suite 805, Skokie, IL 60076, U.S.A. E-mail: poland@hamamatsu.de
Telephone: (1)847-825-6046, Fax: (1)847-825-2189
E-mail: usa@hamamatsu.com North Europe and CIS:
HAMAMATSU PHOTONICS NORDEN AB
Boston Office Main Office
20 Park Plaza, Suite 312, Boston, MA 02116, U.S.A. Torshamnsgatan 35 16440 Kista, Sweden
Telephone: (1)617-536-9900, Fax: (1)617-536-9901 Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01
E-mail: usa@hamamatsu.com E-mail: info@hamamatsu.se
United Kingdom: Russian Office
HAMAMATSU PHOTONICS UK Limited 11, Christoprudny Boulevard, Building 1, Office 114,
Main Office 101000, Moscow, Russia
2 Howard Court, 10 Tewin Road, Welwyn Garden City, Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19
Hertfordshire AL7 1BW, UK E-mail: info@hamamatsu.ru
Telephone: (44)1707-294888, Fax: (44)1707-325777
E-mail: info@hamamatsu.co.uk Italy:
HAMAMATSU PHOTONICS ITALIA S.r.l.
South Africa Office: Main Office
Information in this catalogue is 9 Beukes Avenue, Highway Gardens, Edenvale Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy
believed to be reliable. However, 1609 South Africa Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41
Telephone/Fax: (27)11-609-0367 E-mail: info@hamamatsu.it
no responsibility is assumed for
possible inaccuracies or omissions. Rome Office
Specifications are subject to Viale Cesare Pavese, 435, 00144 Roma, Italy
Telephone: (39)06-50 51 34 54, Fax: (39)02-93 58 17 41
change without notice. No patent E-mail: inforoma@hamamatsu.it
rights are granted to any of the
circuits described herein.
© 2017 Hamamatsu Photonics K.K.
Quality, technology, and service

are part of every product. Cat. No. KIRD0005E03
Sep. 2017 DN
Printed in Japan (2,000)

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Selection guide - September 2017

HAMAMATSU PHOTONICS K.K.

image sensors, and infrared detector modules with built-in preamplifiers.

Contents InGaAs PIN photodiodes, InGaAs APD · · · · · · · · 9

Spectral response range

Spectral response (typical example)

Wavelength (μm) KIRDB0477EC

Cutoff wavelength temperature dependence (typical example)

Wavelength (μm) KIRDB0478EC

One-stage TE-cooled type (0.9 to 1.87 μm)

Non-cooled type (0.9 to 2.1 μm)

12 Non-cooled type (0.9 to 2.6 μm)

One-stage TE-cooled type (0.9 to 2.57 μm)

InGaAs linear image sensors

G11508 series One-stage TE-cooled type (0.9 to 1.67 μm)

G11135 series 13 Non-cooled type (0.95 to 1.7 μm)

G11620 series 13, 14 One-stage TE-cooled type (0.95 to 1.67 μm)

Back- G13913 series Non-cooled type (0.95 to 1.7 μm)

G12230-512WB 14 Two-stage TE-cooled type (0.95 to 2.15 μm)

to 1.85 μm G11475 series Two-stage TE-cooled type (0.9 to 1.85 μm)

Long to 2.05 μm G11476-256W Two-stage TE-cooled type (0.9 to 2.05 μm)

InGaAs area image sensor

G12460-0606S One-stage TE-cooled type (1.12 to1.9 μm)

Standard type G12242-0707W 14

InGaAs PIN photodiodes [Cutoff frequency, Photosensitive area (unit: mm)]

G11193 series ϕ1 ϕ0.3 ϕ0.2

G8941 series ϕ1 ϕ0.5 ϕ0.3

COB G13176 series ϕ1 ϕ0.3

G7150/G7151-16 0.45 × 1 0.08 × 0.2

G12430 series 0.45 × 1 0.2 × 1

ROSA G12072-54 ϕ0.03

InGaAs APD [Cutoff frequency, Photosensitive area (unit: mm)]

InGaAs linear image sensors [Line rate, Number of pixels]

G9494 series 512 ch*2 256 ch

G11508/G11608 series 512 ch*2 256 ch

G11135 series 13 512 ch 256 ch

G11620 series 13, 14 512 ch 256 ch 128 ch

G12230 series 14 512 ch

to 1.85 μm G11475 series 512 ch*2 256 ch

Long to 2.05 μm G11476-256W 256 ch

to 2.55 μm G11478 series 512 ch*2 256 ch

InGaAs area image sensors [Frame rate, Number of pixels]

G12242-0707W 128 × 128 ch

G13393-0909W 640 × 512 ch

*3: Integration time 1 μs

InGaAs PIN photodiodes

COB G13176 series 7

Standard type G6849 series 8

Long to 1.9 μm G12181 series 11 1 3 3

wavelength to 2.1 μm G12182 series 1 3 3

InGaAs linear image sensors

G11620 series 13, 14 15 18

Back-illuminated type G13913 series 19

to 1.85 μm G11475 series 15

to 2.55 μm G11478 series 15

InGaAs area image sensors

Standard type G12242-0707W 14 22

InGaAs PIN photodiodes

InGaAs linear image sensors