Tantalum nitride
From Infogalactic: the planetary knowledge core
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Names | |
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Other names
Tantalum mononitride
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Identifiers | |
12033-62-4 | |
EC Number | 234-788-4 |
Jmol 3D model | Interactive image |
PubChem | 83832 |
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Properties | |
TaN | |
Molar mass | 194.955 g/mol |
Appearance | black crystals |
Density | 14.3 g/cm3 |
Melting point | 3,090 °C (5,590 °F; 3,360 K) |
insoluble | |
Structure | |
Hexagonal, hP6 | |
P-62m, No. 189 | |
Vapor pressure | {{{value}}} |
Related compounds | |
Other cations
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Vanadium nitride Niobium nitride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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verify (what is ?) | |
Infobox references | |
Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.[1]
References
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