In this paper, we present a 3-dimensional analytical consideration of high-voltage-interconnectio... more In this paper, we present a 3-dimensional analytical consideration of high-voltage-interconnection (HVI) effect along with 2-dimensional study using floating-poly-field-plate (FPFP) method to compensate the HVI effect for ultra-high-voltage (UHV) 800 V lateral-diffused metal-oxide-semiconductors (LDMOS). Crossing the HVI metal line above the UHV p-n junction structure would deteriorate the breakdown voltage for almost 65 – 70% from the original breakdown. As compared with the conventional method, FPFP method would drastically reduced the influence of the interconnection, from 67% to less than 10%, giving rise to breakdown voltage sustained above 800 V. Furthermore, the study of different FPFP design scheme, poly field plate length variation, interlayer dielectric oxide charge and p-top mask design layout consideration are also studied in this paper.
In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in jun... more In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The proposed multiple RESURF LDMOS is able to achieve a specific on-resistance of lower than 130 mΩcm2 while maintaining a breakdown voltage of over 800 volts. The key feature of this novel device is round shape p-top rings which are located on the surface of n-drift region. Optimization of p-top mask design is performed in order to achieve the lowest on-resistance possible with the desired breakdown voltage. An investigation of 3D effect in cylindrical layout is also presented to confirm the performance of device.
Abstract An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) ... more Abstract An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage ...
In this paper, we present a 3-dimensional analytical consideration of high-voltage-interconnectio... more In this paper, we present a 3-dimensional analytical consideration of high-voltage-interconnection (HVI) effect along with 2-dimensional study using floating-poly-field-plate (FPFP) method to compensate the HVI effect for ultra-high-voltage (UHV) 800 V lateral-diffused metal-oxide-semiconductors (LDMOS). Crossing the HVI metal line above the UHV p-n junction structure would deteriorate the breakdown voltage for almost 65 – 70% from the original breakdown. As compared with the conventional method, FPFP method would drastically reduced the influence of the interconnection, from 67% to less than 10%, giving rise to breakdown voltage sustained above 800 V. Furthermore, the study of different FPFP design scheme, poly field plate length variation, interlayer dielectric oxide charge and p-top mask design layout consideration are also studied in this paper.
In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in jun... more In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The proposed multiple RESURF LDMOS is able to achieve a specific on-resistance of lower than 130 mΩcm2 while maintaining a breakdown voltage of over 800 volts. The key feature of this novel device is round shape p-top rings which are located on the surface of n-drift region. Optimization of p-top mask design is performed in order to achieve the lowest on-resistance possible with the desired breakdown voltage. An investigation of 3D effect in cylindrical layout is also presented to confirm the performance of device.
Abstract An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) ... more Abstract An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage ...
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Papers by Rudy Sihombing