Mater. Res. Soc. Symp. Proc. Vol. 1283 © 2011 Materials Research Society
DOI: 10.1557/opl.2011.546
Enhanced Electron Field Emission from Carbon Nanotube Matrices
2
Archana Pandey1, Abhishek Prasad1, Yoke Khin Yap1, Mark Engelhard , Chongmin Wang
1
2
Department of Physics, Michigan Technological University, 118 Fisher Hall, 1400 Townsend
Drive, Houghton, Michigan 49931, U.S.A.
2
EMSL, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, WA 99354,
U.S.A.
ABSTRACT
Field emission from as-grown carbon nanotube (CNTs) films often suffered from high threshold
electric field, and low emission site density due to screening effects. These problems can be
resolved by patterned growth of CNTs on lithographically prepared catalyst films. However,
these approaches are expensive and not applicable for future emitting devices with large display
areas. Here we show that as-grown CNTs films can have low emission threshold field and high
emission density without using any lithography processes. We have reduced screening effects
and work function of as-grown CNTs films and created the novel CNT matrices by addition of
vapor- and/or liquid- phase deposition. Furthermore, these CNT matrices can continuous emit
electrons for 40 hours without significant degradation. The fabrication of our CNT matrices is
described as follows. First, CNT films were grown by plasma-enhanced chemical vapor
deposition. These vertically-aligned multiwalled carbon nanotubes (VA-MWCNTs) are having
typical length and diameter of 4 microns and 40 nm, respectively. Spacing between these CNTs
is ~80 nm in average, leading to poor emission properties due to the screening effect. These asgrown samples were then subjected to the deposition of strontium titanate (SrTiO3) by pulsedlaser deposition to reduce both the work function and screening effect of CNTs. The emission
properties of these coated samples can be further improved by fully filled the spaces between
VA-MWCNTs by poly-methyl metha acrylate (PMMA). The field emission threshold electric
field was decreased from 4.22 V/μm for as-grown VA-MWCNTs to 1.7 V/μm for SrTiO3 coated
VA-MWCNTs. The addition filling with PMMA and mechanical polishing can further reduce
the threshold to 0.78V/μm for the so called PMMA-STO-CNT matrices. Long term emission
stability and emission site density were also enhanced.
INTRODUCTION
Since their discovery CNTs have gained intensive research interest [1-2]. They are novel
nanostructured materials with extraordinarily properties. It has been already demonstrated that
they are among strongest nanofibres known till date, with Young’s moduli as high as 1 TPa [34]. They also have astonishing electronic properties [5], chemical stability [6] and superior
mechanical properties [7]. Because of their very small radius of curvature and high aspect ratio
they are expected to have excellent electronic properties [8]. Numerous efforts have been done to
develop a better electron source based on field emission of CNTs that could replace the
conventional field emission devices at the industrial scale in future. However, in order to do this,
improvements in its field emission properties are still needed. For example, CNTs have very high
work function (5eV), and as grown CNTs films suffer from high emission threshold fields (Eth)
due to the screening effect from the densely packed CNTs. If one can modify the surface of
CNTs by coating a low work function material, then it is possible to surmount this inadequacy of
CNTs [9]. Most reported work focuses on coating wide band gap materials to reduce Eth of
various types of CNTs [10-12].
In our previous work we showed that etched and bundled CNTs show excellent emission
characteristics due to the reduction of screening effect [13]. In this work we suggest the use of
strontium titanate (chemical formula SrTiO3) as a coating material on CNTs for lowering Eth and
improving the emission stability. Among several coating materials, SrTiO 3 was chosen for its
lower work function (2.6 eV) and high dielectric constant (475) [14-15]. SrTiO3 coating can play
two major roles during the emission process. First, it will lower the effective work function of
the emitter which in turn will increase emission density. Second, it may act as a protective layer
for stable interface which will minimize the emission instabilities caused by adsorption or ion
bombardment of residual gas molecules [16-17]. Here we report our experimental finding related
to these topics.
The threshold electric field (Eth), defined as electric field required for emitting electrons
to a level of 1 µA/cm2, was 4.22 V/µm for as-grown sample. For SrTiO3 coated CNTs samples,
Eth was reduced to 1.7 V/µm. After embedding SrTiO3 coated CNTs into PMMA the Eth was
further reduced to 0.78 V/µm. In addition, the SrTiO3 coated and PMMA-embedded, opened-tip
sample showed a significant improvement in emission stability as compared to the as-grown
CNTs sample.
EXPERIMENTAL DETAILS
All the samples used in this experiment were prepared by dual RF-plasma-enhanced
chemical vapor deposition (PECVD). The detailed experimental procedures are reported
elsewhere [13]. In brief, Ni films (10 nm thick) were first deposited on p-type Si substrates (1–10
Ω cm) by RF magnetron sputtering. These substrates were then used for the growth of VAMWCNTs at 450 oC by using pure methane gas. Our VA-MWCNTs were grown within a
circular area (0.385 cm2 in area). Three identical samples can be prepared in each growth
process. In this case we are comparing three samples.
Figure 1 shows the schematic of the processing techniques. The first sample is as grown
CNTs (figure 1a) with Ni catalytic nanoparticles on tips. In the second method we coated a high
dielectric constant material strontium titanate (SrTiO 3) using pulsed laser deposition technique
(figure 1b). The coating was confirmed using XPS (because of page limitation the data is not
shown here). Next we dipped the SrTiO3 coated CNTs in PMMA matrix (figure 1c). The PMMA
solution was prepared by adding a developer solution to a volume ratio of 1:1, and a VAMWCNT sample was dipped into the solution for 15 minutes before removal. This was followed
by annealing the sample at ~100°C for 2-3 minutes to dry the sample. Finally, the sample was
mechanically polished by using fiber-free lapping cloth and a colloidal silica (0.02 µm) solution
to expose the tips of carbon nanotubes. SrTiO3 coated CNTs with the exposed tips, separated by
PMMA are schematically shown in figure 1(d). These were then characterized for field emission
measurements.
(a)
(b)
(c)
(d)
Figure 1. Fabrication steps of PMMA-STO-CNT field emitters. (a) As grown VA-MWNTs on Si
substrates (b) SrTiO3 coated CNT (c) SrTiO3-PMMA coated CNTs and (d) Mechanical polishing
to open the tips of SrTiO3-PMMA CNTs
DISCUSSION
Figure 2a shows the field emission characteristic curve for the as grown VA-MWCNTs. This is
the curve of current density (J) versus electric field (E) for as grown VA-MWCNTs. The
Fowler–Nordheim (FN) equation [16], J = Aβ2E2 exp(-BΦ3/2/βE) is used to describe field
emission, where A, B are constants, E is the applied electric field in V cm-1, and Φ is the work
function in eV, β is the field enhancement factor. A linear F-N plot (inset 1 of figure 2a) verified
that the detected currents are due to quantum tunneling. The threshold electric field, Eth (applied
electric field for generating a current density of 1 µA/cm2) is 4.22 V/µm for the as grown CNTs.
Figure 2b describes the field emission stability of as grown sample (SEM image shown in inset 2
of figure 2b). The stability plot indicates that as grown CNTs are not stable after long emission
duration. Inset 3 of figure 2b shows the images of emission sites of as grown CNTs. Then these
as grown CNTs were coated with SrTiO3. As shown in figure 2c, Eth = 1.7 V/µm are detected
from the SrTiO3 coated CNTs. The linear FN relations (inset 4 of figure 2c) were also revealed.
Current saturation at high applied fields is detected in these samples. We think that electron
supply is limited by the impedance (mostly resistance, but may include some capacitance and
inductance) present especially along the CNTs and at the contacts between the CNTs and the
substrate. These limiting factors become obvious at high current density probably due to Joule
heating and/or current-induced dislocation [17]. As shown in inset of figure 2b, the distances
between the as grown VA-MWCNTs are small (50–300 nm) and will initiate screening effect
that reduces the β factors. This means not all as grown VA-MWCNTs will contribute to the
collected current except those are longer in lengths or located at the edges of the larger spacing.
For the SrTiO3 coated CNTs shown in inset 5 of figure 2d, the emission site density is improved.
This might be because of low work function as well as high dielectric property of SrTiO 3. Since
as grown CNTs are coated with high dielectric constant material then it will reduce the screening
effect between as grown CNTs. We have compared these samples for their emission stability. As
shown in figure 2d, the SrTiO3 coated CNTs is stabilized at a current density >200 µA/cm2 after
continuous 40-hours operation while the as grown sample has reduced its current density to <175
µA/cm2.
As shown in the insets of figure 2d, the emission density for SrTiO3 coated CNTs (inset
5) is higher than that of the as grown sample (inset 2). Apparently, lower screening effects on the
SrTiO3 coated CNTs offers more emission sites. SrTiO3 coating acts as a protective layer and
prevent from current stabilities as well. Also, the emission loads (heat and mechanical stress
from Joule heating) is now shared by more CNTs, the emission stability is thus improved. As
indicated by the FN equation, a lower local field on each emitter will lead to the emission of
(a)
Eth = 4.22 V/m
1
10
0
10
-1
10
1
ln(I/V2) A / V2
-28
-2
10
-35
-3
10
-4
10
-42
1.5
4
3.5
4
10
3
10
Eth = 1.7 V/m
(c)
2
10
1
10
0
10
-20
-1
-2
10
-3
10
-4
-25
-30
-35
10
0
4
1
2
3
4
1/
5
6
7
V (10-4V-1)
8
9
3
4
Electric field (V/m)
4
10
3
10
Eth = 0.78 V/m
(e)
-20
1
7
ln(I/V2) A / V2
10
0
10
-24
-1
10
100
0.5
-3
10
0.5
1.0
Electric
2
1.0
1/ V (10-3V-1)
1.5
2.0
field (V/m)
1.5
2.5
3
50
0
0
600
1200
1800
Time (min)
2400
250
200
(d)
STO coated
150
100
5
6
50
0
0
600
1200
Time (min)
1800
2400
250
PMMA-STO coated
(f)
150
100
-28
-2
10
0.0
150
200
2
10
(b)
200
8
Electric field (V/m)
10
Current Density (A/cm2)
2.5
3.0
-1
1/ V (10-4V )
6
ln(I/V2) A / V2
Current Density (A/cm2)
2
2.0
250
Current Density (A/cm2)
3
10
2
10
Current Density (A/cm2)
4
10
Current Density (A/cm2)
Current Density (A/cm2)
lower current density per emitter. This will reduced Joule heating and stresses on these emitters
and thus produce stable emission.
8
9
50
0
0
600
1200
1800
Time (min)
2400
Figure 2. (a) The field emission characteristic curves for the as grown VA-MWCNTs and the inset 1
shows the corresponding F-N plot. (b) The emission current stability curve at a current density of
0.2mA/cm2. Inset 2 and 3 shows the corresponding SEM image of as grown VA-MWCNTs and images of
emission sites. (c) The field emission characteristic curves for the etched and bundled MWCNTs and the
inset 4 shows the corresponding F-N plot. (d) The emission current stability curve at a current density of
0.3mA/cm2. Inset 5 and 6 shows the corresponding SEM image of Etched and bundled MWCNTs and
images of emission sites. (e) The field emission characteristic curves for the PMMA coated VAMWCNTs and the inset 7 shows the corresponding F-N plot. (f) The emission current stability curve at a
current density of 0.3mA/cm2. Inset 8 and 9 shows the corresponding SEM image of PMMA coated VAMWCNTs and images of emission sites.
Next we created SrTiO3-PMMA coated CNT matrices for further testing. As can be seen
from figure 2e that Eth for PMMA coated samples were much reduced (Eth = 0.78V/µm) as
compared to SrTiO3 coated and as grown VA-MWCNTs. The threshold electric field depends
mainly on two parameters: the aspect ratio of the CNTs and their inter-tube spacing. High aspect
ratio of carbon nanotubes enables large electric field enhancement at the tips and initiates
electron emission at a relatively lower applied electric field. All of our samples, as-grown as well
as PMMA-coated samples, were grown simultaneously under the same growth conditions, so
they have the same length and diameter and, therefore, same aspect ratio. This was confirmed by
SEM observation. So in our case, the lower threshold field and better emission of the SrTiO3PMMA-coated CNTs cannot be due to variations in the CNT aspect ratios and graphitic order.
Again Figure 2f shows the emission stability graph for the PMMA-coated CNT sample. It
can be clearly seen from the figure that stability after PMMA coating improved considerably
than that for the as-grown and SrTiO3 coated CNTs. As both the samples have CNTs with same
aspect ratio, same structural order, and same intertube spacing, we think that the improvement in
the emission stability of the SrTiO3-PMMA-coated CNTs sample is due to the reduction in the
screening effect. As the screening effect from surrounding CNTs is less, CNTs in SrTiO3PMMA coated CNTs can emit electrons more easily and at lower electric field. So, SrTiO3PMMA coated CNTs emit electrons under low applied field. While for the as-grown sample,
higher electric field is required to emit the same amount of current density, and so is under the
higher electric field. Also field emission is more stable at lower electric field for longer time due
to lesser Joule heating effect. We also proposed a model to explain this which is discussed
elsewhere [19]. PMMA (3.4) has lower dielectric constant than SrTiO3 (475). Therefore, SrTiO3PMMA coating as well as removal of potential resistance barrier due to Ni catalyst particles by
polishing improved the field emission characteristics. Thus lower emission threshold and
considerably improved life time stability was observed in case of SrTiO 3-PMMA coated CNTs.
CONCLUSIONS
In summary, we found that SrTiO3 coated CNTs can produce more stable emission. This coating
can further reduce the screening effects, increase the emission density, and improve the emission
stability. We also demonstrated a significant improvement in the field emission and the emission
stability in the CNT film by PMMA-SrTiO3 coating and polishing techniques. The threshold
field to emit the electrons at a level of 1 µA/cm2 was reduced to 0.78 V/µm for PMMA-SrTiO3
coated CNTs from 4.22 V/µm for as grown CNTs. We discussed the possible reasoning behind
this field emission improvement and attributed this to the reduction in the screening effect from
the neighboring CNTs due to combined dielectric properties of PMMA and SrTiO3. After
polishing the number of emission sites also increases. This was due to polishing as it opens more
sites (remove catalyst particles from tip of as grown CNTs) for emitting electrons.
ACKNOWLEDGMENTS
Yoke Khin Yap acknowledges support from the U.S. Army Research Laboratory and the Defense
Advanced Research Projects Agency (Contract number DAAD17-03-C-0115).
Part of the sample characterization was performed using EMSL, a national scientific user facility
sponsored by the Department of Energy's Office of Biological and Environmental Research located at
Pacific Northwest National Laboratory.
REFERENCES
1. S. Ijima, Nature (London) 354, 56 (1991).
2. M.M.J. Treacy, T.W. Ebbesen, J.M. Gibson, Nature (London) 381, 678 (1996).
3. D.A. Walters, L.M. Ericson, M.J. Casavant, J. Liu, D.T. Colbert, K.A. Smith and R.E.
Smalley, Appl Phys Lett 74, 3803 (1999).
4. M.S. Dresselhaus, G. Dresselhaus, P. Avouris. Carbon nanotubes: synthesis, structure,
properties, and application (Berlin: Springer 2001) pp.287-320
5. W.A. deHeer, A. Chatelain, D.A. Ugarte, Science 270, 1179 (1995).
6. P.G. Collins, A. Zettl, Appl Phys Lett 69, 1969 (1996).
7. W.B. Choi, D.S. Chung, J.H. Kang, H.Y. Kim, Y.W. Jin, I.T. Han, Y.H. Lee, J.E. Jung,
N.S. Lee, G.S. Park, and J.M. Kim, Appl Phys Lett 75, 3129 (1999).
8. J. Li, R. Stevens, L. Delzeit, H.T. Ng, A. Cassell, J. Han and M. Meyyappan, Appl Phys
Lett 81, 910 (2002).
9. M. Shiraishi and M. Ata, Carbon 39, 1913 ( 2001).
10. W. Yi, T. Jeong, S.G. Yu, J. Heo, C.S. Lee, J.H. Lee, W.S. Kim, J.B. Yoo and J.M. Kim,
Adv. Mater 14, 1464 (2002).
11. J.M. Bonard, C. Klinke, K.A. Dean and B.F. Coll, J.Vac.Sci.Technol. B 26, 1892 (2008).
12. I.T. Han, H.J. Kim, Y. Park, N. Lee, J.E. Jang, J.W. Kim, J.E. Jung, and J. M. Kim, Appl
Phys Lett 81, 2070 (2002).
13. A. Pandey, A. Prasad, J. Moscatello, B. Ulmen and Y.K. Yap, Carbon 48, 287 (2010).
14. W. Maus-Friedrichs, M. Frerichs, A. Gunhold, S. Krischok, V. Kempter, G. Bihlmayer,
Surface Science 515, 499 (2002).
15. F.M. Pontes, E.J.H. Lee, E.R. Leite and E. Longo, Journal of materials science 35, 4783
(2000).
16. R. H. Fowler and L. Northeim, Proc. R. Soc. A 119, 173 (1928).
17. J. M. Bonard, C. Klinke, K.A. Dean, B.F. Coll, Phys Rev B 67, 115406 1 (2003).
18. K.A. Dean, T.P. Burgin and B.R. Chalamala, Appl. Phys Lett 79, 1872 (2001).
19. A. Pandey, A. Prasad, J. P. Moscatello and Y.K. Yap, ACS Nano 4, 6760 (2010).