farshad akhtarian
580 California St., Suite 400
San Francisco, CA, 94104
semiconductor lasers
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Abstract
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This paper discusses semiconductor lasers, highlighting their structure, operation principles, and applications. It covers the differences between n-type and p-type semiconductors, the formation of p-n junctions, and the processes of stimulated and spontaneous emissions leading to laser action. The advantages of semiconductor lasers, including high efficiency, compact design, and low production costs, are emphasized, along with specific applications such as optical disc technologies and telecommunications.
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PN Junction Theory
In the previous tutorial we saw how to make an N-type semiconductor material by doping a silicon atom with small amounts of Antimony and also how to make a P-type semiconductor material by doping another silicon atom with Boron. This is all well and good, but these newly doped N-type and P-type semiconductor materials do very little on their own as they are electrically neutral. However, if we join (or fuse) these two semiconductor materials together they behave in a very different way merging together and producing what is generally known as a " PN Junction ". When the N-type semiconductor and P-type semiconductor materials are first joined together a very large density gradient exists between both sides of the PN junction. The result is that some of the free electrons from the donor impurity atoms begin to migrate across this newly formed junction to fill up the holes in the P-type material producing negative ions. However, because the electrons have moved across the PN junction from the N-type silicon to the P-type silicon, they leave behind positively charged donor ions (ND) on the negative side and now the holes from the acceptor impurity migrate across the junction in the opposite direction into the region where there are large numbers of free electrons. Related Products: PIN | Varactor As a result, the charge density of the P-type along the junction is filled with negatively charged acceptor ions (NA), and the charge density of the N-type along the junction becomes positive. This charge transfer of electrons and holes across the PN junction is known as diffusion. The width of these P and N layers depends on how heavily each side is doped with acceptor density NA, and donor density ND, respectively.
STUDY REPORT Student name & ID: P-N Junctions
To understand the behaviour of the Junctions and its transition region under the Equilibrium state, Forward bias state and Reverse bias state.
Voltage-controlled structure of certain p-n and p-i-n junctions
Physical review. B, Condensed matter, 1987
It is shown by solving the transport equations that an a priori uniform semiconductor which conducts ions as we11 as electrons and holes, in contact with two different chemical environments, will become a p-n or p-in junction exhibiting a new kind of rectifying properties. When the junction is placed in an electrical circuit the I-V relation will show a strong asymmetry under reversal of the applied voltage V. For large values of~V~, the current I is linear in V but d V/dI is different by a few orders of magnitude for the forward and reverse biases. The distributions of donors in the n region and of acceptors in the p region, are shown to depend on V. This suggests that the shape of the p-n of p-in junction can be controlled at elevated temperatures, at which the ions are mobile, by applying a suitable voltage V. The junction can then be frozen in by quenching the solid to room temperature, at which state the applied voltage can be removed.
4 PN and Metal-Semiconductor Junctions
CHAPTER OBJECTIVES This chapter introduces several devices that are formed by joining two different materials together. PN junction and metal-semiconductor junction are analyzed in the forward-bias and reverse-bias conditions. Of particular importance are the concepts of the depletion region and minority carrier injection. Solar cells and light-emitting diode are presented in some detail because of their rising importance for renewable energy generation and for energy conservation through solid-state lighting, respectively. The metal-semiconductor junction can be a rectifying junction or an ohmic contact. The latter is of growing importance to the design of high-performance transistors.
01-Ch05 Semiconductor Physics_Mehta
conductors 5.7 Hole Current 5.8 Intrinsic Semiconductor 5.9 Extrinsic Semiconductor 5.10 n-type Semiconductor 5.11 p-type Semiconductor 5.12 Charge on n-type and p-type Semiconductors 5.13 Ma= ority and Minority Carriers 5.14 pn = unction 5.15 Properties of pn-= unction 5.16 Applying D.C. Voltage across pn-= unction or Biasing a pn-= unc-tion 5.17 Current Flow in a Forward Biased pn-= unction 5.18 Volt-Ampere Characteristics of pn = unction 5.19 Important Terms 5.20 Limitations in the Operating Conditions of pn-= unction
Role played by N and N-N impurities in type-IV semiconductors
Physical Review B, 1993
Ab initio all-electron Hartree-Fock calculations within the molecular-cluster model are performed to analyze the role of N impurities, both isolated and complex, in type-IV semiconductors. The results are used to investigate the structural and electronic properties. For isolated impurities the N atom distorts in the (111)direction towards a vacancy leading to a final local C3, symmetry. The N atom forms sp bonds with the host atoms and leaves an unoccupied N lone pair. For N2 both N atoms tend to form similar sp bonds and move away from each other in the (111)direction without N-N bond formation. For the case of N2, localized N-N hole states are obtained. A detailed picture at the orbital level is given. These achievements should also be important for amorphous hydrogenated semiconductors.
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