Semiconductor Physics

In this paper, a novel 800V multiple RESURF lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The proposed multiple RESURF LDMOS is able to achieve a specific on-resistance of lower than 130 mΩcm2 while maintaining a breakdown voltage of over 800 volts. The key feature of this novel device is round shape p-top rings which are located on the surface of n-drift region. Optimization of p-top mask design is performed in order to achieve the lowest on-resistance possible with the desired breakdown voltage. An investigation of 3D effect in cylindrical layout is also presented to confirm the performance of device.

We investigated bulk and thin-film samples of the quaternary p-type semiconductor Cu2ZnSnS4 (CZTS) by µSR, in order to characterize the existing muonium signals. We find that the majority of the implanted muons form a diamagnetic state broadened by an interaction with the Cu nuclear moments, which we interpret as Mu + bound to sulphur. A paramagnetic fraction is also present at low temperatures and the ratio between the two muon charge states, Mu + and Mu 0 , varies between 20 and 40% prior to the onset of muon diffusion, which occurs at around 150 K. The fraction of Mu 0 is found to be sensitive to the defect content of the sample. The paramagnetic fraction has two different contributions and their origin is discussed and related with the muon role as a probe for charge carriers in the material.

By measuring the drift velocity of electrons in diamond as a function of applied electric field, we
demonstrate that ultra-pure diamond exhibits negative differential electron mobility in the [100] direction
below 140 K. Negative electron mobility is normally associated with III–V or II–VI semiconductors with
an energy difference between different conduction band valleys. The observation of negative mobility in
diamond, an elemental group IV semiconductor, is explained in terms of repopulation effects between
different equivalent conduction band valleys using a model based on the Boltzmann equation.

The synthesis of new materials for thermal infrared (IR) detection has been an intensive research
area in recent years. Among new semiconductor materials, synthetic diamond has the ability to
function even under very high temperature and high radiation conditions. In the present work,
diamond Schottky diodes with boron concentrations in the range of 1014<B<1017cm3 are
presented as candidates for IR thermal sensors with an excellent temperature coefficient of
resistance (8.42%/K) and very low noise levels around 6.6 10^-15 V2/Hz. This enables huge
performance enhancements for a wide variety of systems, e.g., automotive and space applications.

The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cath-odoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coales-cence boundaries, supported by trends in the number of features observed across the wafer.

Sessile drop experiments were performed on molten indium antimonide on clean quartz (fused silica) surfaces. A cell was constructed through which argon, helium, oxygen, hydrogen or a mixture of these was flowed at 600 1C. Some of the InSb was doped with 0.1% Ga. The surface tension s of oxide-free molten InSb was smaller in Ar than in He, may have increased with increasing O 2 in the gas, and was not influenced by Ga or H 2 . The contact angle y on silica was higher in the presence of Ar, was lowered by O 2 , and was not influenced by H 2 or Ga. The work of adhesion W and the surface energy s sv of the silica were higher in He than in Ar. The surface remained free of solid oxide only in flowing gas containing p0.8 ppm O 2 . This behavior is attributed to reaction of O 2 at the surface of the melt to form In 2 O gas. When solid oxide formed on Ga-doped material, it was strongly enriched in Ga, with the Ga/In ratio increasing with the concentration of O 2 in the gas.

Simulation of terahertz (THz) emission based on PC antennas imposes a challenge to couple the semiconductor carrier phenomena, optical transport and the THz energy transport. In this paper a Multi-physics simulation for coupling these phenomena using COMSOL Multi-physics 4.3b is introduced. The main parameters of THz photoconductive (PC) antenna as THz emitter have been reviewed and discussed. The results indicate the role of each parameter in the resulting photocurrent waveform and THz frequency: The radiated THz photocurrent waveform is determined by the photoconductive gap (the separation between the metallic electrodes), the incident laser illumination and the DC excitation voltage; while the THz frequency depends on the dipole length. The optimization of these parameters could enhance the emission. The simulations extend the advance of compact and cost-effective THz emitters.

A superluminal quantum-vortex model of the electron and the positron is produced from a superluminal double-helix model of the photon during electron-positron pair production. The two oppositely-charged (with Q = ±e sqrt (2/α) = 16.6e) open-helix spin-½ half-photons compose the double-helix photon. These half-photons separate and curl up their separated superluminal single-helical trajectories to form an electrically-charged superluminal closed-helix spin-½ quantum-vortex electron model and a corresponding positron model. The helical radius and the Dirac equation's zitterbewegung angular frequency of the quantum vortex electron and positron models equal the helical radius and zitterbewegung angular frequency of the two spin-½ half-photons, each of energy E = mc^2 , that composed the double-helix photon model of energy E = 2mc^2 from which the electron and positron models were produced. The photon and electron models are also compatible when a photon of energy E > 2mc^2 produces a relativistic electron-positron pair. Implications of the quantum vortex electron model for electron stability are discussed.

The exact transmission co-efficient T c and reflection co-efficient R c of a one dimensional (1D) potential step, potential barrier, deformed step and asymmetrical potential barrier have been obtained. The nature of the T c and R c have been studied by varying potential parameters in all the above cases. Finally,a general FORTRAN program is developed for the calculation of T c and R c for all the above cases by using Gauss Elimination Method.

This Impact Report identifies and summarises the diverse impacts, resulting from the £500m of UK funding of Science and Technology in 2013, using numerous quantitative metrics and short case study extracts.  It shows how the varied impacts of a national science and technology organization and its many funded programmes can be annually identified, captured, tracked, and summarised in a public document.

The report was produced for, and by, the Science and Technology Facilities Council (STFC) -  the UK Research Council responsible for funding: (1) all UK astronomy, particle and nuclear physics research, (2) related UK science and technology facilities (e.g. as Harwell and Daresbury), (3) the UK contribution to international science (e.g. CERN, international telescopes and space missions), (4) innovation and business spin-off programmes, and (5) UK public engagement activities.

The Report was co-researched and co-authored by the STFC Impact Team, including myself while Impact Evaluation Manager in 2013, with Dr. Claire Dougan-McCallie (lead author/Head of Impact) and Jenny Beard, with additional input from senior managers, and many data and case study contributions from other key managers across STFC.

Varied key impacts are identified and reported including:

• Research amongst the best (by citation impact) in astronomy, nuclear and particle physics.
• Supported research of 226 Principal Investigators in 70 universities, led to 1,100 peer-reviewed papers in 2012.
• Facilities (the Diamond Light Source, ISIS and CLF) were used in 2012/13 by over 4,200 unique users , in over 2,400 experiments, producing over 1,000 papers in peer-reviewed journals.

• Technology from CERN benefited the UK economy by over £100 billion every year.
• Funding the development of the UK’s space, internet and computer animation industries, returned over £500 billion to the UK economy per annum.
• Funded Innovation Campuses hosted over 230 enterprises and supported over 5,000 jobs.
• UK industry won £43 million in contracts from the international subscriptions funded, and had accumulated a total of £150 million since 2005.

• Funded research inspired future generations to study STEM subjects, attracting 90% of UK undergraduates to study physics, funded 782 PhD students  and 16,800 student training days.
• Between 2009 to 2012 public engagement programmes engaged people on 58 million occasions, with 2 million people engaged in face-to-face activities in 2013 alone.

This paper details the testing of a commercially available gate turn-off thyristor (GTO) for application in inductivestore power supplies. GTOs have been used as a component of inductive-store systems directly and as part of compound switches. These GTOs are generally available commercially and typically have extensive datasheets. However, the inductive-store application differs significantly from conventional switching applications, which significantly reduces the utility of the datasheets; GTOs are typically used at 100-1000 Hz in a fairly continuous manner, whereas in an inductive-store system, a GTO may be conducting for a relatively long time before doing a single turn off.

The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study

The aim of the laboratory work is to understand the principle of Zener diode operation and also apply the knowledge practically by completing laboratory tasks. 
In this part, limiting circuit is described in Figure 1 above. The trimmer resistance is varied, so that the voltage at cathode of the D9 diode changes. Initially, it is set up to +12 V, then 0 V, and finally to -12V.  Case RV4 = +12V: When the current flows from the AC input voltage (Vin = +10V) during the positive half, the D9 diode is reverse biased and the input voltage equals output voltage. During the negative half, diode is still closed. Hence, obtained pattern is provided in Figure 2.

Abstract
- The rate 1.0725 is found frequently between many solar planets orbital and internal distances (a constant rate)
- I suggest this rate is found because of Lorentz Contraction Phenomenon
i.e.
- There's a difference in velocities = "light velocity" between 2 motions in the solar group (even if we can't measure or notice this velocities difference)
i.e.
There's More Than One Frame In The Solar Group

This paper suggests a clear argument as following:
1. The solar group is created by light beams, but we see these light beams in different forms (as matters and distances)

2. We see the light as matter (Specifically, bright fringes produced by light coherence we see as matters, where dark fringes we see as distances)

3. We see bright fringes as matters because our mind works by light velocity (Mind Thinking Process), so the whole matter around us is found because of the human mind effect.

4. to enable us to see the sun rays, Earth has to move with light velocity relative to the sun, to create a difference in velocities = c velocity

5. So, the sun creation depends on the difference in Earth and Sun motions = c velocity.

6. That's why Lorentz contraction phenomenon is seen in the solar orbital and internal distances, specifically with the constant rate = 1.0725, (which equals 7.25%), where the sun obliquity to ecliptic (7.25 degrees).

7. means, the sun creation process contains Lorentz Phenomenon Effect on the solar orbital and internal distances (and on many other values) 
8. The Distance can be defined as "A Form Of Energy", which is proved by the moon orbit regression yearly 19 degrees (Metonic Cycle) (otherwise how distance can move?) (that supports the claim that, distances are dark fringes produced by light coherence)

This Paper Consists Of 2 Parts
1st Part    : Theory Of Matter Creation
2nd Part    : Application on the theory (the solar group creation from the light) 
 Starting From The Solar Group First Energy
 Explaining The Energy Coherence (light coherence)
 Discovering The Matter Creation
 Providing The Solar Group Motions Harmony Reasons

Integrated Circuit atau disingkat dengan IC adalah Komponen Elektronika Aktif yang terdiri dari gabungan ratusan, ribuan bahkan jutaan Transistor, Dioda, Resistor dan Kapasitor yang diintegrasikan menjadi suatu Rangkaian Elektronika dalam sebuah kemasan kecil.

Format:
not ppt/pptx , academia doesn't allow ppt for uploading. It is a quick overlook on Regular diode and temperature effect in it [in slide format] from Electronic Device Course.  Anyone who is interested in the topic can check and learn few stuff.
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Pre-pandemic era stuff and  9~10 slides[original] contained small texts and pictures with short lines 8 to 10 minute speech on the topic.
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Faculty/Course teacher given marks: 14/15 on the original slide.
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Slides are not too descriptive and requires a basic understanding before scrolling the sections in it.
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Doping is the process of adding impurities to intrinsic semiconductors to alter their properties. Normally Trivalent and Pentavalent elements are used to dope Silicon and Germanium. When an intrinsic semiconductor is doped with Trivalent impurity it becomes a P-Type semiconductor.

The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use.

Iron oxides nanostructures have a wide range of applications in different fields. Properties of nanostructures depend on their size, morphology and chemical composition. The precipitation method is one of the most known and advantageous techniques for the synthesis of metal oxide nanoparticles. To investigate the effect of precursor on properties of iron oxide nanostructures, iron oxide has been synthesized using precipitation method with iron (III) acetate, iron (III) chloride and iron (III) nitrate as the iron precursor. The products were characterized by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR) and field emission scanning electron microscopy (FESEM). Hematite Nanorods were obtained using acetate precursor with uniform shape and lack of agglomeration. Chloride and nitrate precursors were led to the formation of Wuestite and magnetite phase, respectively. In the case of using chloride and nitrate precursors, nanoparticles existed with bulk structures. FTIR spectra of all samples showed strong absorption peaks of Fe-O bond vibration at 400-600 cm-1. This study provides good insights into the synthesis of engineered iron oxide nanostructure with desired properties for different applications.

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Read first:
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Wisdom and these great writings are priceless and should be free to access for everybody. We made this available for those who cannot pay the actual price of the e-copy. The whole credit goes to the writer and publication company.
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It is a solution manual for "Electronic device and circuit theory 11th edition By Robert L. Boylestad".
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Ad Victorian

Introduction
This lab session has a purpose of practical implementation of theoretical knowledge about transistors. There are four parts in the work:
• NPN and PNP Transistors
• Transistors Biasing
• Q point stabilization
Apparatus
The following equipment was used during the lab:
• MCM3/EV board
• Power supply PSLC or PS1-PSU/EV
• Accessories
As in the previous lab, the whole lab work is done with the MCM/EV board. The oscilloscope was used for the visualization of the waveforms. Screwdriver was used for the variable resistor configuration.

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MS4SSA -  Introduction to Semiconductors [FROM PPTX to pdf format]
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Credits: Mathematics and Science in Schools in Sub-Saharan Africa
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[
Format:
not ppt/pptx , academia doesn't allow ppt for uploading.
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It is a overview on Semiconductor and basics, its (history, theory, practical usage) of [General Semiconductor theory, Diodes, Transistors, Layering, etc. ] with full of pictures [in slide format]  and for anyone who is interested in the topic.

[ -- ]
Slides are not too descriptive and requires a basic understanding before scrolling the sections in it.
[ -- ]

A charged photon and its light-speed helical trajectory form a surprising new solution to the relativistic electron’s energy-momentum equation. This charged photon model is a new model for the electron, and quantitatively resembles the light-speed electron described by Dirac. The charged photon model of the electron is found to quantitatively predict the relativistic de Broglie wavelength of the free electron. This suggests a new interpretation of quantum mechanics, where the electron is seen as a charged photon, and the quantum mechanical wave equations for the electron are generated by the waves produced by the circulating charged photon that composes the electron.

The most original and shocking interpretation of Lucretius in the last 40 years.

Thomas Nail argues convincingly and systematically that Lucretius was not an atomist, but a thinker of kinetic flux. In doing so, he completely overthrows the interpretive foundations of modern scientific materialism, whose philosophical origins lie in the atomic reading of Lucretius' immensely influential book De Rerum Natura.

This means that Lucretius was not the revolutionary harbinger of modern science as Greenblatt and others have argued; he was its greatest victim. Nail re-reads De Rerum Natura to offer us a new Lucretius--a Lucretius for today.

The researchers have demonstrated the utility of ion exchange lithography by using the technique to produce a working LED. "That has proven the principle." Different groups within AMOLF will start using this technique to create other applications. [36] It may be possible in the future to use information technology where electron spin is used to store, process and transfer information in quantum computers. [35]

One-dimensional nanowires (NWs) have attracted considerable attention in recent years because of their novel physical properties and potential applications as interconnects in nanometre-scale electronics. NWs have potential applications in nanoscale electronics, optoelectronics, photonics, sensors, and solar cells due to their unique electrical, chemical, and optical properties. Several chemical and physical methods are commonly used to produce NWs. Among them, electrochemical synthesis and vapour-liquid-solid (VLS) methods to produce NWs have become popular among scientific workers due to a number of advantages. Synthesis of NWs using anodic alumina and polymer templates in an electrochemical cell has been described in detail as investigated in our laboratory. Characterization of metal and semiconductor NWs has been accomplished using scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), high resolution transmission microscope (HRTEM), X-ray diffraction (XRD), and energy dispersive X-ray analysis (EDAX). Morphology of NWs has been revealed by SEM, structure by TEM, crystallinity by XRD and chemical composition by EDAX. I-V characteristics of copper and semiconductor NWs were recorded in-situ, as grown in pores of anodic alumina template, using Dual Source Meter (Keithley Model 4200 SCS) with platinum probes for contacts. Resonating tunneling diode (RTD) characteristics of fabricated NWs have been investigated. Bulk production of Copper NWs has been described by seed growth technique. Applications of NWs are not covered in any detail under this review.

台塑集團於民國82年10月13日動土興建麥寮工業專用港，邁出了台塑六輕廠的建設腳步，濁水溪出海口南岸從此產生了天翻地覆的變化；由濁水溪出海口南岸地貌的改變，追溯當地人在自然環境中尋找生活資源的歷史軌跡，以及思考六輕工業區、集集攔河堰等建設計畫所帶來的改變，關於生存發展的選擇以及代價，是「水、 濁水溪與麥寮人」這個田野研究的問題起點。
台塑六輕於雲林麥寮建廠後，濁水溪出海口出現了什麼樣的變遷？當地人如何取得需求的水資源？有工業搶水的問題嗎？有地下水過度使用導致國土下沉的問題嗎？工業發展是否造成水汙染，乃至嚴重影響農漁業的運作與發展？這些都是這篇研究論文嘗試回答的問題。
本研究由爬梳歷史資料開始，加上走訪雲林麥寮，進行鄉公所與公部門的徵詢，與台塑六輕廠的對話，田野實際訪談，出海口的實際探勘，以及彙整清大麥寮訪調團歷年的紀錄，嘗試回答上述問題。
濁水溪出海口已經沙漠化，這是自然河川與工業用水的抉擇；麥寮人的農漁業，大規模依賴地下水，但並非地層下陷的元兇；汙染與工業有關，也與漁牧業和當地建設規畫有關。麥寮人、水、濁水溪與工業的關係，包含時代的變遷、大自然的挑戰、發展問題的兩難、以及人們在生活裡求取生存與幸福所有努力的軌跡。

關鍵字：濁水溪出海口、水資源、地下水、工業搶水、水汙染

The aim of this laboratory work is to get practical experience with BJT and FETs. From theory, we know that Field Effect Transistors are voltage controlled unlike from BJTs, which are current controlled devices. There are Source, Gate and Drain electrode sides. The Gate electrode voltage is used to control Drain-Source characteristics. In this lab, we are to obtain the results in order to prove above said.   
Equipment used:
- Power Supply PS1-PSU/EV
- Module MCM4/EV
- Multimeter 
- Jumpers

Operational Amplifier (Op Amp) is a three terminal electronic device which has two inputs of high impedance. The first input is called inverting (represented by ‘-‘), and the other terminal is called non-inverting input. The third terminal serves as output port, where signal is usually amplified by some gain (A), depending on the nature of op amp and input characteristics. 
In this lab session we build op amp circuits and carry out various calculations of op amp characteristics. At the end of this lab, we are to strengthen theoretical knowledge by gaining hands on experience. This lab covers:
- Inverting Amplifiers 
- Non-inverting Amplifiers 
- Summing Amplifiers

Diode is an electronic device having conductor at their ends. The principle behind the diode is similar to a valve or a gate, which lets electricity flow only in one direction (Simple English Wikipedia, Diode). Application of diodes is broad. They serve as converter from alternating current to direct current, met at the power supplies. Also they can be used in radio equipment to decode amplitude modulation. Nowadays, there are two basic semiconductor materials which the diode is made from: silicon and germanium
Two types of semiconductors are joined to each other to produce semiconductor diode. One of them has spare holes (p side), and the other has extra electrons (n side). This results in the flow of electrons from the side, where there are more electrons to the side where there are less of them, i.e. current. However, it is difficult to flow for the current in the reverse direction. Connecting electrodes are following: positive p-side is anode, and negative n-side is cathode.

Of the III-Nitride family the AlN/GaN heterojunction has demonstrated the largest combined polarization charge and energy band osets available in the system. Engineering the polarization fields through varying the AlN thickness leads to two-dimensional electron gas densities (2DEGs) that may be tailored between 0.5 - 5 x1013 cm􀀀2. Furthermore, the ultra-thin (< 5 nm) barrier and excellent transport properties of this all binary heterostructure make it well suited for high electron mobility transistor applications where high frequency and high current are required. This work encompasses various design aspects of GaN-based High Electron Mobility Transistors (HEMTs) which ultimately result in the realization of several generations that utilize the AlN/GaN heterostructure.

HEMTs fabricated from high-mobility, low sheet resistance heterostructures have achieved drain current densities up to 2.3 A/mm and transconductance of 480 mS/mm, which set new benchmarks for GaN-based HEMTs. Ultra-thin pre-metallization etching has been employed for the rst time to reduce ohmic contact resistance for AlN/GaN HEMTs and has enabled small signal frequency performance in excess of 100 GHz. Moll's method for delay time extraction has been utilized to extract an effective electron velocity in the intrinsic region of the AlN/GaN HEMT and was found to be  1.2 x107 cm/s.

By leveraging the allowable thickness window of the AlN barrier along with the high density 2DEGs that result, several novel HEMT devices have been designed and realized. High Al-content AlxGa1􀀀xN back barriers have been employed for improved 2DEG confinement in several new variations of the ultra-thin AlN/GaN HEMT. A dual, parallel-channel AlN/GaN-based HEMT structure is designed and realized for the first time as an epitaxial approach to mitigating DC-RF frequency dispersion. These structures emphasize the facilitation of new device designs that are made possible through the particular qualities the AlN/GaN heterostructure possesses.

Most digital designers will never be confronted with the details of the manufacturing process that lies at the core of the semiconductor revolution. Yet, some insight in the steps that lead to an operational silicon chip comes in quite handy in understanding the physical constraints that are imposed on a designer of an integrated circuit, as well as the impact of the fabrication process on issues such as cost. In this chapter, we briefly describe the steps and techniques used in a modern integrated circuit manufacturing process. It is not our aim to present a detailed description of the fabrication technology, which easily deserves a complete course [Plummer00]. Rather we aim at presenting the general outline of the flow and the interaction between the various steps. We learn that a set of optical masks forms the central interface between the intrinsics of the manufacturing process and the design that the user wants to see transferred to the silicon fabric. The masks define the patterns that, when transcribed onto the different layers of the semiconductor material, form the elements of the electronic devices and the interconnecting wires. As such, these patterns have to adhere to some constraints in terms of minimum width and separation if the resulting circuit is to be fully functional. This collection of constraints is called the design rule set, and acts as the contract between the circuit designer and the process engineer. If the designer adheres to these rules, he gets a guarantee that his circuit will be manufacturable. An overview of the common design rules, encountered in modern CMOS processes, will be given. Finally, an overview is given of the IC packaging options. The package forms the interface between the circuit implemented on the silicon die and the outside world, and as such has a major impact on the performance, reliability, longevity, and cost of the integrated circuit. 2.2 Manufacturing CMOS Integrated Circuits A simplified cross section of a typical CMOS inverter is shown in Figure 2.1. The CMOS process requires that both n-channel (NMOS) and p-channel (PMOS) transistors be built in the same silicon material. To accommodate both types of devices, special regions called wells must be created in which the semiconductor material is opposite to the type of the channel. A PMOS transistor has to be created in either an n-type substrate or an n-well, while an NMOS device resides in either a p-type substrate or a p-well.

The paper briefly describes the Hall effect and its application in semiconductor material analysis. The Hall coefficient is calculated based on experimental results and used to measure fundamental semiconductor properties of the given doped sample of germanium. Values of conductivity, resistivity, carrier concentration and carrier mobility are calculated and the dopant type is identified. The obtained results are then validated through comparison with existing literature.

An analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics in very thin films of SiO2 on silicon is presented. The final results are believed to provide the
most complete examination of FN emission theory and predict the breakdown electric field in thin Si02 films. The role of the roughness, at the Si-Si02 interface,
in determining the FNT current in these structures is also discussed.