Tunnel injection
From Infogalactic: the planetary knowledge core
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Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator.
It is used to program NAND flash memory. The process used for erasing is called tunnel release.
An alternative to tunnel injection is the spin injection.
See also
References
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