Scribd
Upload
682 views1 page

A 1266

This document provides specifications for the KTA1266 PNP plastic encapsulated transistor. It includes maximum ratings for voltage and current, as well as typical electrical characteristics like DC current gain, saturation voltages, transition frequency, and noise figure. The transistor is RoHS compliant and comes in different performance ranks for gain. Dimensions are also provided for the TO-92 plastic package.

Uploaded by

dragon-red0816
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
682 views1 page

A 1266

This document provides specifications for the KTA1266 PNP plastic encapsulated transistor. It includes maximum ratings for voltage and current, as well as typical electrical characteristics like DC current gain, saturation voltages, transition frequency, and noise figure. The transistor is RoHS compliant and comes in different performance ranks for gain. Dimensions are also provided for the TO-92 plastic package.

Uploaded by

dragon-red0816
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

KTA1266

-0.15A , -50V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente

18-Dec-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

3
Base
1
Emitter
Collector
2

RoHS Compliant Product
A suffix of -C specifies halogen & lead-free

FEATURE
Excellent h
FE
Linearity
Low Noise
Complementary to KTC3198

CLASSIFICATION OF h
FE (1)

Product-Rank KTA1266-O KTA1266-Y KTA1266-GR
Range 70~140 120~240 200~400









ABSOLUTE MAXIMUM RATINGS (T
A
=25C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -50 V
Collector to Emitter Voltage VCEO -50 V
Emitter to Base Voltage VEBO -5 V
Collector Current - Continuous IC -150 mA
Collector Power Dissipation PC 625 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 C

ELECTRICAL CHARACTERISTICS (T
A
=25C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO -50 - - V IC= -100A, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100A, IC=0
Collector Cut-Off Current ICBO - - -0.1 A VCB= -50V, IE=0
Emitter Cut-Off Current IEBO - - -0.1 A VEB= -5V, IC=0
DC Current Gain
hFE (1) 70 - 400

VCE= -6V, IC= -2mA
hFE (2) 25 - - VCE= -6V, IC= -150mA
Collector to Emitter Saturation Voltage VCE(sat) - - -0.3 V IC= -100mA, IB= -10mA
Base to Emitter Saturation Voltage VBE(sat) - - -1.1 V IC= -100mA, IB= -10mA
Transition Frequency fT 80 - - MHz VCE= -10V, IC= -1mA
Collector Output Capacitance Cob - - 7 pF VCE= -10V, IE=0, f=1MHz
Noise Figure NF - - 10 dB
VCE= -6V, IC= -0.1mA,
f=1KHz, Rg=10K

TO-92
REF.
Millimeter
REF.
Millimeter
Min. Max. Min. Max.
A 4.40 4.70 F 0.30 0.51
B 4.30 4.70 G 1.27 TYP.
C 12.70 - H 1.10 1.40
D 3.30 3.81 J 2.42 2.66
E 0.36 0.56 K 0.36 0.76

1 11 1Emitter
2 22 2Collector
3 33 3Base

You might also like