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    Isc 2SD5703: Isc Silicon NPN Power Transistor

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    dragon-red0816
    The document summarizes the specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5703. It has a high breakdown voltage of 1500V minimum and is designed for color TV horizontal output applications. The transistor has absolute maximum ratings including collector-base voltage of 1500V, collector-emitter voltage of 800V, and continuous collector current of 10A. It also lists typical electrical characteristics such as a collector-emitter saturation voltage of 5V maximum and fall time of 0.3us.

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    Isc 2SD5703: Isc Silicon NPN Power Transistor

    Uploaded by

    dragon-red0816
    359 views2 pages
    The document summarizes the specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5703. It has a high breakdown voltage of 1500V minimum and is designed for color TV horizontal output applications. The transistor has absolute maximum ratings including collector-base voltage of 1500V, collector-emitter voltage of 800V, and continuous collector current of 10A. It also lists typical electrical characteristics such as a collector-emitter saturation voltage of 5V maximum and fall time of 0.3us.

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    datasheet

    Original Title

    d5703

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    The document summarizes the specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5703. It has a high breakdown voltage of 1500V minimum and is designed for color TV horizontal output applications. The transistor has absolute maximum ratings including collector-base voltage of 1500V, collector-emitter voltage of 800V, and continuous collector current of 10A. It also lists typical electrical characteristics such as a collector-emitter saturation voltage of 5V maximum and fall time of 0.3us.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    359 views2 pages

    Isc 2SD5703: Isc Silicon NPN Power Transistor

    Uploaded by

    dragon-red0816
    The document summarizes the specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5703. It has a high breakdown voltage of 1500V minimum and is designed for color TV horizontal output applications. The transistor has absolute maximum ratings including collector-base voltage of 1500V, collector-emitter voltage of 800V, and continuous collector current of 10A. It also lists typical electrical characteristics such as a collector-emitter saturation voltage of 5V maximum and fall time of 0.3us.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    INCHANGE Semiconductor

    isc Product Specification

    isc Silicon NPN Power Transistor

    2SD5703

    DESCRIPTION High Breakdown VoltageVCBO= 1500V (Min) High Switching Speed Low Saturation Voltage

    APPLICATIONS Designed for color TV horizontal output applications

    ABSOLUTE MAXIMUM RATINGS(Ta=25)


    SYMBOL PARAMETER VALUE UNIT

    VCBO

    Collector-Base Voltage

    1500

    VCEO

    Collector-Emitter Voltage

    800

    VEBO

    Emitter-Base Voltage

    IC

    Collector Current- Continuous

    10

    IC

    Collector Current- Pulse Collector Power Dissipation @ TC=25

    30

    PC

    70

    TJ

    Junction Temperature

    150

    Tstg

    Storage Temperature Range

    -55~150

    isc Websitewww.iscsemi.cn

    INCHANGE Semiconductor

    isc Product Specification

    isc Silicon NPN Power Transistor


    ELECTRICAL CHARACTERISTICS
    TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

    2SD5703

    TYP.

    MAX

    UNIT

    VCE(sat)

    Collector-Emitter Saturation Voltage

    IC= 8A; IB= 1.6A


    B

    5.0

    VBE(sat)

    Base-Emitter Saturation Voltage

    IC= 8A; IB= 1.6A


    B

    1.5

    ICES

    Collector Cutoff Current

    VCE= 1400V; VBE= 0

    mA

    ICBO

    Collector Cutoff Current

    VCB= 800V; IE= 0

    10

    ICBO

    Collector Cutoff Current

    VEB= 4V; IC= 0

    mA

    hFE-1

    DC Current Gain

    IC= 1A; VCE= 5V

    15

    40

    hFE-2

    DC Current Gain

    IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3

    5.3

    7.3

    tf

    Fall Time

    0.3

    isc Websitewww.iscsemi.cn

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