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    4.12 Bias Stabilization: 18 V (2.24 Ma) (2.4 K 1.1 K) 18 V 7.84 V 10.16 V

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    khrid3
    The stability of an amplifier circuit is measured by how sensitive it is to parameter variations. In transistor amplifiers, the collector current IC is sensitive to temperature, the base-emitter voltage VBE, and the reverse saturation current ICO. As temperature increases, ICO doubles every 10°C, VBE decreases by 7.5mV/°C, and IC increases. This can cause the bias point to drift from the designed operating point. For example, as temperature increases from 25°C to 100°C, ICO increases 200x from 0.1nA to 20nA while VBE decreases from 0.65V to 0.48V. This document demonstrates how increasing temperature from 25°C to 100°

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    4.12 Bias Stabilization: 18 V (2.24 Ma) (2.4 K 1.1 K) 18 V 7.84 V 10.16 V

    Uploaded by

    khrid3
    23 views1 page
    The stability of an amplifier circuit is measured by how sensitive it is to parameter variations. In transistor amplifiers, the collector current IC is sensitive to temperature, the base-emitter voltage VBE, and the reverse saturation current ICO. As temperature increases, ICO doubles every 10°C, VBE decreases by 7.5mV/°C, and IC increases. This can cause the bias point to drift from the designed operating point. For example, as temperature increases from 25°C to 100°C, ICO increases 200x from 0.1nA to 20nA while VBE decreases from 0.65V to 0.48V. This document demonstrates how increasing temperature from 25°C to 100°

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    The stability of an amplifier circuit is measured by how sensitive it is to parameter variations. In transistor amplifiers, the collector current IC is sensitive to temperature, the base-emitter voltage VBE, and the reverse saturation current ICO. As temperature increases, ICO doubles every 10°C, VBE decreases by 7.5mV/°C, and IC increases. This can cause the bias point to drift from the designed operating point. For example, as temperature increases from 25°C to 100°C, ICO increases 200x from 0.1nA to 20nA while VBE decreases from 0.65V to 0.48V. This document demonstrates how increasing temperature from 25°C to 100°

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views1 page

    4.12 Bias Stabilization: 18 V (2.24 Ma) (2.4 K 1.1 K) 18 V 7.84 V 10.16 V

    Uploaded by

    khrid3
    The stability of an amplifier circuit is measured by how sensitive it is to parameter variations. In transistor amplifiers, the collector current IC is sensitive to temperature, the base-emitter voltage VBE, and the reverse saturation current ICO. As temperature increases, ICO doubles every 10°C, VBE decreases by 7.5mV/°C, and IC increases. This can cause the bias point to drift from the designed operating point. For example, as temperature increases from 25°C to 100°C, ICO increases 200x from 0.1nA to 20nA while VBE decreases from 0.65V to 0.48V. This document demonstrates how increasing temperature from 25°C to 100°

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    Substituting values gives

    VCE  18 V  (2.24 mA)(2.4 k


     1.1 k
    )
     18 V  7.84 V
     10.16 V

    4.12 BIAS STABILIZATION


    The stability of a system is a measure of the sensitivity of a network to variations in
    its parameters. In any amplifier employing a transistor the collector current IC is sensitive to each of the following parameters:
    : increases with increase in temperature
    VBE: decreases about 7.5 mV per degree Celsius (C) increase in temperature
    ICO (reverse saturation current): doubles in value for every 10C increase in
    temperature
    Any or all of these factors can cause the bias point to drift from the designed point
    of operation. Table 4.1 reveals how the level of ICO and VBE changed with increase
    in temperature for a particular transistor. At room temperature (about 25C) ICO 
    0.1 nA, while at 100C (boiling point of water) ICO is about 200 times larger at 20
    nA. For the same temperature variation,  increased from 50 to 80 and VBE dropped
    from 0.65 to 0.48 V. Recall that IB is quite sensitive to the level of VBE, especially for
    levels beyond the threshold value.

    TABLE 4.1 Variation of Silicon Transistor


    Parameters with Temperature
    T (C)
    65
    25
    100
    175

    ICO (nA)

    0.2  103
    0.1
    20
    3.3  103

    20
    50
    80
    120

    VBE(V)
    0.85
    0.65
    0.48
    0.30

    The effect of changes in leakage current (ICO) and current gain () on the dc bias
    point is demonstrated by the common-emitter collector characteristics of Fig. 4.65a
    and b. Figure 4.65 shows how the transistor collector characteristics change from a
    temperature of 25C to a temperature of 100C. Note that the significant increase in
    leakage current not only causes the curves to rise but also an increase in beta, as revealed by the larger spacing between curves.
    An operating point may be specified by drawing the circuit dc load line on the
    graph of the collector characteristic and noting the intersection of the load line and
    the dc base current set by the input circuit. An arbitrary point is marked in Fig. 4.65a
    at IB  30 A. Since the fixed-bias circuit provides a base current whose value depends approximately on the supply voltage and base resistor, neither of which is affected by temperature or the change in leakage current or beta, the same base current
    magnitude will exist at high temperatures as indicated on the graph of Fig. 4.65b. As
    the figure shows, this will result in the dc bias points shifting to a higher collector
    current and a lower collectoremitter voltage operating point. In the extreme, the transistor could be driven into saturation. In any case, the new operating point may not
    190

    Chapter 4

    DC BiasingBJTs

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