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    Small Signal NPN Transistor: Description

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    Deja Dress N Blouse
    2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits.

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    Small Signal NPN Transistor: Description

    Uploaded by

    Deja Dress N Blouse
    131 views6 pages
    2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits.

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    2N1893

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    © Attribution Non-Commercial (BY-NC)

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    2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    131 views6 pages

    Small Signal NPN Transistor: Description

    Uploaded by

    Deja Dress N Blouse
    2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    2N1893

    SMALL SIGNAL NPN TRANSISTOR

    GENERAL PURPOSE HIGH VOLTAGE DEVICE

    DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating. TO-39

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol V CBO V CER V CEO V EBO IC P tot Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE 10) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 25 o C o at T C 25 C at T C 100 o C Storage Temperature Max. Operating Junction Temperature Value 120 100 80 7 0.5 0.8 3 1.7 -65 to 175 175 Unit V V V V A W W W
    o o

    T stg Tj

    C C

    January 2003

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    2N1893
    THERMAL DATA
    R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5
    o o

    C/W C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 90 V V CB = 90 V V EB = 5 V I C = 100 A 120 T C = 150 o C Min. Typ. Max. 10 15 10 Unit nA A nA V

    V (BR)CER Collector-Emitter Breakdown Voltage (R BE 10 ) V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain

    I C = 10 mA

    100

    I C = 10 mA

    80

    I E = 100 A

    V CE(sat) V BE(sat) h FE

    I C = 50 mA I C = 150 mA I C = 50 mA I C = 150 mA I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 10 mA T C = -55 o C I C = 1 mA I C = 5 mA I C = 50 mA IE = 0

    I B = 5 mA I B = 15 mA I B = 5 mA I B = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 5 V V CE = 10 V f = 1KHz f = 1KHz 20 35 40 20 30 45 50 0.82 0.96 50 80 80 40 70 85 70 13 55

    1.2 5 0.9 1.3

    V V V V

    120

    h fe fT C CBO C EBO

    Small Signal Current Gain Transition Frequency Collector-Base Capacitance

    150 MHz 15 85 pF pF

    V CE = 10 V f = 20MHz f = 1MHz f = 1MHz

    V CB = 10 V

    Emitter-Base IC = 0 V EB = 0.5 V Capacitance Pulsed: Pulse duration = 300 s, duty cycle 1 %

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    2N1893
    DC Current Gain DC Current Gain

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    2N1893

    TO-39 MECHANICAL DATA


    mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch

    G I H

    B
    P008B
    4/5

    2N1893

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

    5/5

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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