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    2n2907-General Purpose Amplifiers and Switches

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    bmmostefa
    2N2904A and 2N2905A are silicon planar epitaxial PNP transistors. They are designed for high-speed saturated switching and general purpose applications. 2N2906A / 2N2907A approved to CECC 50002-103 available on request.

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    2n2907-General Purpose Amplifiers and Switches

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    bmmostefa
    76 views7 pages
    2N2904A and 2N2905A are silicon planar epitaxial PNP transistors. They are designed for high-speed saturated switching and general purpose applications. 2N2906A / 2N2907A approved to CECC 50002-103 available on request.

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    2N2904A and 2N2905A are silicon planar epitaxial PNP transistors. They are designed for high-speed saturated switching and general purpose applications. 2N2906A / 2N2907A approved to CECC 50002-103 available on request.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    76 views7 pages

    2n2907-General Purpose Amplifiers and Switches

    Uploaded by

    bmmostefa
    2N2904A and 2N2905A are silicon planar epitaxial PNP transistors. They are designed for high-speed saturated switching and general purpose applications. 2N2906A / 2N2907A approved to CECC 50002-103 available on request.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    2N2904A-2N2905A 2N2906A-2N2907A

    GENERAL PURPOSE AMPLIFIERS AND SWITCHES


    DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and 2N2905A) and in Jedec TO-18 (for 2N2906A and 2N2907A) metal cases. They are designed for high-speed saturated switching and general purpose applications. 2N2904A/2N2905A approved to CECC 50002-100, 2N2906A/2N2907A approved to CECC 50002-103 available on request.
    TO-39 TO-18

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C for 2N2904A and for 2N2906A and at T c as e 25 C for 2N2904A and for 2N2906A and Storage and Junction Temperature 2N2905A 2N2907A 2N2905A 2N2907A Value 60 60 5 600 0.6 0.4 3 1.8 65 to 200 Unit V V V mA W W W W C 1/7

    T s t g, T j January 1989

    2N2904A-2N2905A-2N2906A-2N2907A
    THERMAL DATA
    2N2904A 2N2905A R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 58.3 C/W 292 C/W 2N2906A 2N2907A 97.3 C/W 437.5 C/W

    ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)


    Symbol I CBO I CE X I BEX V ( BR) V (BR) V ( BR) V CE VB E
    CBO

    Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (V BE = 0.5 V) Base Cutoff Current (V BE = 0.5 V) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain

    Test Conditions V CB = 50 V V CB = 50 V V CE = 30 V V CE = 30 V I C = 10 A I C = 10 mA I E = 10 A I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 16 mA I B = 50 mA T am b = 150 C

    Min.

    Typ.

    Max. 10 10 50 50

    Unit nA A nA nA V V V

    60 60 5 0.4 1.6 1.3 2.6 40 40 40 40 40 75 100 100 100 50 200 30 8 10 40 80

    CEO *

    EBO

    (s at )*

    V V V V

    (s at )*

    h F E*

    for 2N2904A and 2N2906A V CE = 10 V I C = 0.1 mA I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V for 2N2905A and 2N2907A V CE = 10 V I C = 0.1 mA I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 50 mA f = 100 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = 150 mA I B1 = 15 mA I C = 150 mA I B1 = 15 mA V CE = 20 V V EB = 2 V V CB = 10 V V CC = 30 V V CC = 30 V

    120

    hFE *

    DC Current Gain

    300

    fT C EBO C CBO t d ** t r ** t s **

    Transition Frequency Emitter-base Capacitance Collector-base Capacitance Delay Time Rise Time Storage Time

    MHz pF pF ns ns ns

    I C = 150 mA V CC = 6 V I B1 = I B2 = 15 mA

    * Pulsed : pulse duration = 300 s, duty cycle = 1.5 %. ** See test circuit.

    2/7

    2N2904A-2N2905A-2N2906A-2N2907A
    ELECTRICAL CHARACTERISTICS (continued)
    Symbol t f ** t o n ** t o f f ** Parameter Fall Time Turn-on Time Turn-off Time Test Conditions I C = 150 mA V CC = 6 V I B1 = I B2 = 15 mA I C = 150 mA I B1 = 15 mA V CC = 30 V Min. Typ. Max. 30 45 100 Unit ns ns ns

    I C = 150 mA V CC = 6 V I B1 = I B2 = 15 mA

    * Pulsed : pulse duration = 300 s, duty cycle = 1.5 %. ** see test circuit.

    Normalized DC Current Gain.

    Collector-emitter Saturation Voltage.

    Collector-base and Emitter-base capacitances.

    Switching Characteristics.

    3/7

    2N2904A-2N2905A-2N2906A-2N2907A
    Test Circuit for ton, tr, td.

    PULSE GENERATOR : tr 2.0 ms Frequency = 150 Hz Zo = 50

    TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 10 M

    Test Circuit for toff, to, tf.

    PULSE GENERATOR : tr 2.0 ns Frequency = 150 Hz Zo = 50

    TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 M

    4/7

    2N2904A-2N2905A-2N2906A-2N2907A

    TO-18 MECHANICAL DATA


    mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch

    D G I H E F

    L C B

    0016043

    5/7

    2N2904A-2N2905A-2N2906A-2N2907A

    TO39 MECHANICAL DATA


    mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch

    D G I H E F

    L B

    P008B

    6/7

    2N2904A-2N2905A-2N2906A-2N2907A

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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