2011-3

PRODUCT GUIDE

Discrete IGBTs

SEMICONDUCTOR
h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

1 Features and Structure

IGBT: I nsulated G ate Bipolar Transistor

IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.

Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on. (1) (2) (3) (4) (5) IGBTs also featuring fast switching Low collector-emitter saturation voltage even in the large current area IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications High input impedance allows voltage drives Available in a variety of packages

Construction
The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction.

Planar Structure
Collector Emitter Electrode

Gate
n+

Equivalent Circuit

Gate

p n

p
n+

n+

n+

p+

p
Collector Collector

p+

Emitter

Collector Rn- (MOD)

P A D

Rn- (MOD)

B O N D IN G

IT

Gate

Gate

LA T

GA

O R

S IL IC O N

TE

IN

S U

p+

ME

P O LY

G A TE
TAL
p p
+ +

n n+ p+

p+ p+

n+ n+ n+

n+

Emitter
ET AL

Emitter

p+

n+

p+

n + n + p
Co ct lle

or

2 IGBT Technical Overview

Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the collector p+ layer. In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequencyswitching applications. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and improved carrier lifetime control techniques.

900-V IGBT for Soft-Switching

2.8 High-speed: GT60M323 2.6 VCE(sat)(V) @IC = 50 A, VGE = 15 V High-speed: GT50N322A(1000V) 2.4
Ta = 125C

2.2 Low-VCE(sat): GT60M303 2.0

Ta = 25C

1.8

1.6 GT60M324 1.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Eoff(mJ) @VCC = 140 V, IC = 50 A, VGG = 20 V, RG = 10 , C = 0.33 F, L = 30 H

Discrete IGBT Development Trends

(1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers

1200 V

(2) Soft switching (5th gen): Low VCE(sat) due to trench gate structure (3) Soft switching (6.5th gen): RC structure (1) Soft switching (4th gen): Low VCE(sat) due to trench gate structure

900 to 1500 V

(2) Soft switching (5th gen): Low VCE(sat) due to optimized carrier injection and trench gate structure (3) Soft switching (6th gen): Thinner wafers and finer process geometries (4) Soft switching (6.5th gen): RC structure (1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers (2) Fast switching (4th gen): High speedy tf due to optimized carrier injection

600 V
(3) Soft switching (4th gen): Low VCE(sat) due to trench gate structure

(4) Low VCE(sat) (6th gen): Thinner wafers and finer process geometries

(5) Soft switching (5th gen): Thinner wafers (6) Soft switching (6th gen): Thinner wafers and finer process geometries (1) Strobe flashes (5th gen): Low VCE(sat) due to trench gate structure

400 V

(2) Strobe flashes (6th gen): High current due to trench gate structure and optimized wafers (3) Strobe flashes (7th gen): High current due to optimized wafers and finer process geometries (1) Plasma displays (4th gen): Low VCE(sat) due to trench gate structure and high IC due to lifetime control

300 to 400 V

(2) Plasma displays (5th gen): Low turn-on loss due to finer process geometries (3) Plasma displays (6th gen): Low turn-on loss due to optimized wafers and finer process geometries (4) Plasma displays (7th gen): Thinner wafers and finer process geometries

Year

2006

2008

2010

2012

3 Discrete IGBT Product Lineup

TSON-8 Applications and Features Breakdown Voltage VCES (V) @Ta = 25C IGBT Current Rating IC (A) @Ta = 25C SOP-8 TO-220SIS TO-220SM(MXN) TO-3P(N) TO-3P(N)IS TO-3P(LH)

DC 10 20 General-purpose motors General-purpose inverters Hard switching fc: up to 20 kHz High ruggedness Series 600 30 50 10 1200 15 25 General-purpose inverters Fast switching Hard switching fc: up to 50 kHz FS series 30 600 50 30 37 40 600 50 Resonant switching Soft switching Soft-Switching Series

Pulse 20 40 60 100 20 30 50 60

GT10J301 GT20J301 GT20J101 GT30J301 GT30J101 GT50J102 GT10Q301 GT10Q101 GT15Q301 GT15Q102 GT25Q301 GT25Q102 GT30J324 GT30J121 GT30J126

100 100 100 100 100 120 GT40J321 GT40J322 GT40J323 GT50J327 GT50J341 GT50J328 GT30J322 GT35J321 GT40J325

GT50J325 GT50J121

GT50J322 GT50J322H GT60J321 GT60J323 GT60J323H GT15M321 GT35MR21

60 15 35 900 50 60 1000 1050 1200 1500 50 60 50 40 40 30 40

120 30 100 100 120 120 120 120 100 80 80 100 100 130 150 200 200 200 200 200 200 GT30G124 GT30G125 GT45G127 GT45G128 GT30J124

GT50MR21 GT50M322 GT60M324 GT50N322A GT50N324 GT60N321 GT50NR21 GT40QR21 GT40T321 GT30J122A GT5G133 GT8G151

PFC Strobe flashes

600 400 300 330

GT30J122 GT40J121

GT8G132 GT10G131 GT30F124 GT45F127 GT30F125 GT45F128 GT30F131

Plasma display panels

360 430 600

: New product

4 Part Numbering Scheme

Example

GT 60 M 3 03 A

Table 1
Version Serial number 1: N-channel 2: P-channel 3: N-channel with built-in freewheeling diode R: N-channel RC-IGBT with built-in freewheeling diode Voltage rating (see Table 1.) Collector current rating (DC) Discrete IGBT

Letter

Voltage (V)

Letter Voltage (V)

Letter

Voltage (V)

C D E F G H

150 200 250 300 400 500

J K L M N P

600 700 800 900 1000 1100

Q R S T U V

1200 1300 1400 1500 1600 1700

5-1 General-Purpose Inverter

The fast-switching (FS) series, a new addition to our third-generation IGBTs, features high ruggedness which helps to improve the energy efficiency of electronic equipment.
General-Purpose Inverters Inverter Air Conditioners Inverter Washing Machines UPS

Rectifier PL circuit Input CB

Inverter

PL Output

Control

Discrete IGBT Trend

For general-purpose inverters

Our 3rd generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our 3rd generation IGBTs and 500-V MOSFETs

IC - VCE Temperature Characteristics

Turn-On Waveform

Low saturation voltage with minimal temperature dependence

50
IGBT MOSFET

Fast reverse-recovery characteristics due to built-in diode with optimal characteristics

VCE

Collector Current, IC (A)

40

IGBT

MOSFET

30 VCE: 100 V/div IC: 10 A/div @VGE = 15 V 20 IGBT: Ta = 25C Ta = 125C MOSFET (500 V / 50 A): Ta = 25C Ta = 125C 0 2 4 6 8 10
Collector - Emitter Voltage, VCE (V)
MOSFET IGBT

Ic

10

@Ta = VCC = VGE = di/dt t : 0.1s/div

125C 300 V + 15 V 400 A/s

Power Loss vs. Carrier Frequency Characteristics

80

Simulation data for inverter applications

60 Loss (W/Tr) IGBT 40 MOSFET 20

@fo = 50 Hz Po = 7.5 kW IGBT: Ta = 25C Ta = 125C MOSFET (500 V / 50 A): Ta = 25C Ta = 125C

12

16

20

24

Carrier Frequency, fC (kHz)

5-1 General-Purpose Inverter

Product Lineup
Circuit Configurations
Single

For general-purpose inverters

Collector

Built-in FRD

Collector

Gate

Gate

Emitter

Emitter

600-V and 1200-V IGBTs

Absolute Maximum Ratings Main Applications Features Part Number VCES (V) DC (A) 10 10 15 15 25 25 10 20 20 30 30 50 IC PC Pulsed Tc = 25C (W) (A) 20 20 30 30 50 50 20 40 40 60 60 100 140 140 170 170 200 200 90 130 130 155 155 200 TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) Package Circuit Configuration (*1) (V) Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 VCE(sat) Typ. @IC (A) 10 10 15 15 25 25 10 20 20 30 30 50 @VGE (V) 15 15 15 15 15 15 15 15 15 15 15 15 (Ms) 0.16 0.16 0.16 0.16 0.16 0.16 0.15 0.15 0.15 0.15 0.15 0.15 tf Typ. Load (*2) L L L L L L L L L L L L Remarks

GT10Q101
High VCES (1200V)

1200 1200 1200 1200 1200 1200 600 600 600 600 600 600

GT10Q301 GT15Q102 GT15Q301 GT25Q102 GT25Q301 GT10J301 GT20J101

Motor driving (UPS/PFC)

High VCES (600V)

GT20J301 GT30J101 GT30J301 GT50J102

600-V Fast IGBTs (4th Generation)

Absolute Maximum Ratings Main Applications Features Inverter power supplies (UPS/PFC/motor) Part Number VCES (V) Fast switching DC (A) 30 30 30 50 50 IC PC Pulsed Tc = 25C (W) (A) 60 60 60 100 100 170 90 170 240 240 TO-3P(N) TO-3P(N)IS TO-3P(N) TO-3P(LH) TO-3P(LH) Package Circuit Configuration (*1) (V) Built-in FRD Built-in FRD 2.0 1.95 2.0 2.0 2.0 VCE(sat) Typ. @IC (A) 30 30 30 50 50 @VGE (V) (Ms) 0.05 0.05 0.05 0.05 0.05 tf Typ. Load (*2) L L L L L

(FS: Fast Switching)

Remarks

GT30J121 GT30J126 GT30J324 GT50J121 GT50J325

600 600 600 600 600

15 15 15 15 15

Isolation Package

600-V IGBTs for Low Frequency Switching

Absolute Maximum Ratings Main Applications Features Power factor correction Low-frequency switching Part Number VCES (V) DC (A) 30 30 40 IC PC Pulsed Tc = 25C (W) (A) 100 100 100 75 120 80 TO-3P(N)IS TO-3P(N) TO-3P(N)IS Package Circuit Configuration (*1) (V) 2.1 1.7 1.45 VCE(sat) Typ. @IC (A) 50 50 40 @VGE (V) 15 15 15 (Ms) 0.25 0.2 0.2 tf Typ. Load (*2) R R R Remarks

GT30J122 GT30J122A GT40J121

600 600 600

Partial Switching Converter Partial Switching Converter Partial Switching Converter : New product

*1 : Single FRD: Fast Recovery Diode *2 R : Resistive load L : Inductive load

5-2 Soft-Switching Applications

Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable for soft-switching applications.

Microwave Ovens

IH Rice Cookers

IH Cookers

MFPs

AC Input Voltage Voltage Resonance 100 V to 120 V

IC VCE

Circuit Waveform

IGBT Rating VCES = 900 V to 1050 V IC = 15 A to 60 A

IC VCE

200 V to 240 V

VCES = 1200 V to 1500 V IC = 40 A

Current Resonance

Waveform

100 V to 240 V
IC VCE

IC

VCES = 600 V IC = 30 A to 60 A

VCE

IH: Induction heating MFP: Multifunction Printer

5-2 Soft-Switching Applications

6.5th-Generation RC-IGBT Series (New Products)
The RC-IGBT (Reverse-Conducting IGBT) Series consists of a freewheeling diode monolithically integrated in an IGBT chip. This is realized by forming an N layer through the P layer on the collector side. The RC-IGBT Series is environmentally friendly since it eliminates the need for a separate diode. Additionally, it also features a reduced thermal resistance of the freewheeling diode.

Cross-Sectional View of the RC-IGBT

Emitter Gate

N P N N P
Collector

Absolute Maximum Ratings IC PC Package DC (A) 35 50 Pulsed TC = 25C (A) (W) 100 100 82 230 Tj (C) 150 175 Circuit Configuration (*1) VCE(sat) Typ. @Ta = 25C IC (A) 35 50 VGE (V) 15 15

Product Lineup

For soft switching

tf Typ. @Ta = 25C Remarks Load (*2) R R 6.5th generation 6.5th generation Tj = 175C 6.5th generation Tj = 175C 6.5th generation Tj = 175C : New product

Main Applications

Features

Part Number

VCES (V)

(V) 1.6 1.7

(s) 0.2 0.18

IH rice cookers and IH cooktops

GT35MR21
Voltage resonance

900 900

TO-3P(N)IS Built-in FWD TO-3P(N) Built-in FWD

GT50MR21

AC 100 V

GT50NR21

1050

50

100

230

175

TO-3P(N)

Built-in FWD

1.8

50

15

0.2

AC 200 V

GT40QR21

1200

40

80

230

175

TO-3P(N)

Built-in FWD

1.9

40

15

0.2

*1 Abbreviation in the Circuit Configuration column FWD: Free-Wheeling Diode *2 Abbreviation in the Load column R : Resistive load

Product Lineup
Circuit Configurations
Single Collector

For soft switching

Built-in FRD

Collector

Gate

Gate

Emitter

Emitter

IGBTs for Soft-Switching Applications

Absolute Maximum Ratings Main Applications IC Features Part Number VCES (V) DC (A) 30 37 40 40 40 40 50 50 50 50 50 60 60 60 15 50 60 50 50 60 40 PC Pulsed TC = 25C (A) (W) 100 100 100 100 100 100 100 100 100 100 120 120 120 120 30 120 120 120 120 120 80 75 75 120 120 170 80 130 130 140 200 140 200 170 170 55 156 254 156 150 170 230 Tj (C) Package Circuit Configuration (*1) VCE(sat) Typ. @IC @VGE (A) (V) 50 50 40 40 40 40 50 50 50 50 50 60 60 60 15 60 60 60 60 60 40 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 tf Typ. Load (*2) R R R R R R R R R R R R R R R R R R R R R Tj = 175C : New product Tj = 175C Fast switching 6th generation Fast switching 6th generation Tj = 175C Fast switching Fast switching Fast switching 6th generation Fast switching Remarks

(V) 2.1 1.9 2.0 1.7 2.0 1.45 2.1 2.2 1.9 1.6 2.0 1.55 1.9 2.1 1.8 2.1 1.7 2.2 1.9 2.3 2.15

(s) 0.25 0.19 0.11 0.2 0.06 0.2 0.25 0.11 0.19 0.15 0.10 0.30 0.16 0.12 0.20 0.25 0.11 0.10 0.11 0.25 0.24

GT30J322 GT35J321 GT40J321 GT40J322 GT40J323

Current resonance

600 600 600 600 600 600 600 600 600 600 600 600 600 600 900 900 900 1000 1000 1000 1500

150 150 150 150 150 150 150 150 150 175 150 150 150 150 150 150 175 150 150 150 175

TO-3P(N)IS TO-3P(N)IS TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N)IS TO-3P(LH) TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(N)IS TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(N)

Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FRD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Built-in FWD Built-in FWD

GT40J325 GT50J322 GT50J322H GT50J327 GT50J341 GT50J328 GT60J321 GT60J323 GT60J323H GT15M321

AC 200 V IH rice cookers and IH cooktops

Voltage resonance

GT50M322 GT60M324 GT50N322A GT50N324 GT60N321 GT40T321

AC 100 V

AC 200 V

*1 Abbreviations in the Circuit Configuration column FRD: Fast Recovery Diode, FWD: Free-Wheeling Diode *2 Abbreviation in the Load column R : Resistive load

5-2 Soft-Switching Applications

Comparisons Between Hard and Soft Switching (diagrams shown only as a guide)
Hard Switching SOA
High-current, high-voltage locus

Soft Switching SOA

Thermal resistance limit area

S/B limit area

IC
High-current, low-voltage and low-current, high-voltage locus

IC

VCE
SOA Locus for Hard Switching

VCE
SOA Locus for Soft Switching

VCE IC IC VCE IC

VCE

Switching Characteristics (Example)

Current Resonance (Example)

Voltage Resonance (Example)

5-3 Strobe Flash Applications

Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller, and logic levels are increasingly used to represent the gate drive voltage. Toshiba offers compact IGBTs featuring low gate drive voltage. As a voltage-controlled device, the IGBT requires only a few components for drive circuit. IGBTs require fewer components for the strobe flash circuit (compared to SCRs). Strobe flash IGBTs are capable of switching large currents.

DSC, Compact Camera

Single-Lens Reflex Camera

10

5-3 Strobe Flash Applications

Xe lamp P-ch 910

Product Lineup 2.5-V to 4.0-V Gate Drive Series

For strobe flashes

The IGBT can operate with a gate drive voltage of 2.5 V to 4.0 V. The common 3.3-V or 5-V internal power supply in a camera can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included between the gate and emitter to provide ESD surge protection.

Example of an IGBT Gate Drive Circuit (3.3-V Power Supply)

Resistor

Trigger transformer Main Capacitor 91 3.3-V power supply

Resonant capacitor

20 k N-ch

1.2 k

IGBT GT8G151

470

3V 0

3.3-V Power Supply

Part Number VCES / IC 400 V / 130 A 400 V / 150 A Gate Drive Voltage Min (V) 2.5 2.5 VCE(sat) (V) Typ. 3.0 2.65 VGE / IC 2.5 V / 130 A 2.5 V / 150 A PC (W) @Ta = 25C 0.83 0.83 Package TSON-8 TSON-8 Remarks 7th generation 7th generation : New product

GT5G133 GT8G151

5-V Power Supply

Part Number VCES / IC 400 V / 150 A 400 V / 200 A Gate Drive Voltage Min (V) 4.0 4.0 VCE(sat) (V) Typ. 2.3 2.3 VGE / IC 4.0 V / 150 A 4.0 V / 200 A PC (W) @Ta = 25C 1.1 1.9 Package SOP-8 SOP-8 Remarks 5th generation 5th generation

GT8G132 GT10G131

<Connection Examples >

Board connection example Collector 5,6,7,8

Gate 4 Emitter 1,2,3 All the emitter terminals should be connected together.

11

5-4 Plasma Display Panel Applications

Plasma Displays
Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability.

Example of a Plasma Display Panel Drive Circuit

PDP

(Sustain circuit)
X drive circuit

X electrodes (X output)

C1

Energy recovery circuit

Sustain circuit

Vsus

Separation circuit

Panel

Y drive circuit

C2

Y electrodes (Y output)

VCE(sat) (V) Typ. @120 A 2.3 1.9 1.6 1.45 1.9 PC (W) @Tc = 25C 25 25 26 26 140

Product Lineup 300-V IGBTs

Part Number VCES / Icp @3 s 300 V / 200 A 330 V / 200 A 300 V / 200 A 330 V / 200 A 360 V / 200 A

For plasma display panels

Package TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SM(MXN)

Remarks 6th generation 6th generation 6th generation 6th generation 6th generation : New product

GT30F124 GT30F125 GT45F127 GT45F128 GT30F131

400-V IGBTs
Part Number VCES / Icp @3 s 430 V / 200 A 430 V / 200 A 430 V / 200 A 430 V / 200 A VCE(sat) (V) Typ. @120 A 2.5 2.1 1.7 1.55

GT30G124 GT30G125 GT45G127 GT45G128

PC (W) @Tc = 25C 25 25 26 26

Package TO-220SIS TO-220SIS TO-220SIS TO-220SIS

Remarks 6th generation 6th generation 6th generation 6th generation : New product

600-V IGBTs
Part Number VCES / Icp @3 s 600 V / 200 A VCE(sat) (V) Typ. @120 A 2.4

GT30J124

PC (W) @Tc = 25C 26

Package TO-220SIS

Remarks 5th generation

12

6 Package Dimensions
Unit: mm

SOP-8
8 5 4.4 0.2 6.0 0.3

TSON-8

0.25 0.15 0.15 0.2

0.3 0.05 0.65 0.05

0.595 typ. 1.27

0.4 0.1

0.25 M

3.3 0.1 3.1 0.1

+ 0.1 0.05

0.175 0.03

5.5 max 5.0 0.2

0.15

3.1 0.1 3.3 0.1

0.5 0.2 1, 2, 3. 4. Emitter Gate

0.85 0.05

1.5 0.2

1, 2, 3. 4.

Emitter Gate

0.1

+ 0.1 0.05

TO-220SM(MXN)

10.16 0.12
1.27 0.13

0.1

5, 6, 7, 8. Collector

5, 6, 7, 8. Collector

A 10.35 0.25

1.3 0.1 8.12 0.11

7.98 0.1

9.14 0.25

+ 0.26

1.05 0.1 0.25 M A

1.5 0.1

1.7 0.1

0.81 0.1 2.55

0.1 0.1

2.55 4.44 0.12

+ 0.13

2.55 0.25

3.0 0.25

1.7 0.2

1. Gate 2. Collector 3. Emitter

13

6 Package Dimensions
Unit: mm

10 0.3 3.2 0.2 3.9 3.0 2.7 0.2

TO-220SIS

TO-3P(N)

15.9 max 2.0 1.0

3.2 0.2 4.5 9.0 4.8 max 20.5 0.5 5.45 0.2 2.8 20.0 0.3

15 0.3

3.3 max

1.14 0.15 2.8 max 13 0.5

2.0 0.3 1.0 0.25

+ 0.3

0.25 M A

0.69 0.15 2.54 0.64 0.15

2.54 2.6 0.1

5.45 0.2 1.8 max 0.6 0.1

+ 0.3

4.5 0.2

1. Gate 2. Collector 3. Emitter 1 2 3

2.0

1. Gate 2. Collector 3. Emitter

TO-3P(LH)
20.5 max 3.3 0.2 6.0

TO-3P(N)IS

15.8 0.5 26.0 0.5

3.6 0.2 3.5 5.5

4.0

1.5

2.0

11.0

1.5

2.0

3.0
+ 0.3 1.0 0.25

2.0
+ 0.25 1.0 0.15

5.45 0.15
+ 0.25

5.45 0.15 5.2 max

5.45 0.2
+ 0.25 0.15

5.45 0.2 1.0 1 2 3 5.0 0.3 3.15 0.1

+ 0.2

0.6 0.10

1.5

2.8

0.6

19.4 min

2.5

20.0 0.6

21.0 0.5

3.6 max

2.50

15.5

1. Gate 2. Collector 3. Emitter

1. Gate 2. Collector 3. Emitter

14

7 Final-Phase and Obsolete Products

The following products are in stock but are being phased out of production. The recommended replacements that continue to be available are listed in the right-hand column. However, the characteristics of the recommended replacements may not be exactly the same as those of the final-phase and obsolete products. Before using a recommended replacement, be sure to check that it is suitable for use under the intended operating conditions.
Application Final-Phase or Obsolete Product Absolute Maximum Ratings VCES (V) 1500 900 900 900 1200 1200 1500 1500 800 900 1200 1400 1500 600 600 900 900 900 900 900 900 900 900 950 1050 600 600 600 600 1000 1200 1200 1200 600 600 600 1000 1200 1200 600 500 600 600 1200 600 600 400 400 400 400 400 400 400 400 400 400 400 400 400 400 400 400 400 250 250 IC (A) DC 30 60 40 40 39 39 40 40 50 50 50 50 50 60 60 60 60 60 60 60 60 60 60 60 60 80 80 8 8 8 8 8 10 15 15 15 15 15 15 20 25 25 25 25 30 50 130 (pulsed) 130 (pulsed) 130 (pulsed) 130 (pulsed) 150 (pulsed) 150 (pulsed) 150 (pulsed) 130 (pulsed) 130 (pulsed) 170 (pulsed) 130 (pulsed) 130 (pulsed) 170 (pulsed) 150 (pulsed) 100 (pulsed) 100 (pulsed) 150 (pulsed) 20 20 Package IH IH TO-3P(N)IS TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) TO-3P(L) TO-3P(L) IH IH IH TO-3P(L) TO-3P(LH) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(L) TO-3P(LH) TO-220NIS TO-220SM TO-3P(N) TO-3P(N) TO-220SM TO-3P(SM) TO-3P(N) TO-220NIS TO-220SM TO-3P(N) TO-3P(N) TO-3P(SM) TO-3P(SM) TO-3P(N) TO-3P(N) TO-3P(N)IS TO-3P(LH) TO-3P(SM) TO-3P(L) NPM DP DP NPM NPM DP DP TO-220NIS TO-220NIS TO-220NIS TO-220FL TO-220FL TO-220FL TO-220FL TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(L) TO-3P(L) Absolute Maximum Ratings Recommended Obsolete Replacements VCES (V) IC (A) DC 60 1000 GT60N321 10 1200 GT10Q101 10 1200 GT10Q101 20 600 GT20J101 15 1200 GT15Q102 15 1200 GT15Q102 30 600 GT30J121 30 600 GT30J121 30 600 GT30J126 25 1200 GT25Q102 50 600 GT50J121 Package TO-3P(LH) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N)IS TO-3P(LH) TO-3P(LH)

Soft switching Resonant switching

General-purpose motors General-purpose inverters

Strobe flashes

Audio amps

MG30T1AL1 MG60M1AL1 GT40M101 GT40M301 GT40Q322 GT40Q323 GT40T101 GT40T301 GT50L101 GT50M101 GT50Q101 GT50S101 GT50T101 GT60J101 GT60J322 GT60M101 GT60M102 GT60M103 GT60M104 GT60M105 GT60M301 GT60M302 GT60M305 GT60M322 GT60N323 GT80J101 GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101 GT15Q311 GT20J311 GT25H101 GT25J101 GT25J102 GT25Q101 GT30J311 GT50J101 GT5G101 GT5G102 GT5G103 GT8G101 GT8G102 GT8G103 GT8G121 GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT25G101 GT25G102 GT50G101 GT50G102 GT75G101 GT20D101 GT20D201

15

OVERSEAS SUBSIDIARIES AND AFFILIATES

Toshiba America Electronic Components, Inc.
Irvine, Headquarters
Tel: (949)623-2900 Fax: (949)474-1330

(As of February 14, 2011)

2011-3
BCE0010H

Toshiba Electronics Europe GmbH

Dsseldorf Head Office
Tel: (0211)5296-0 Fax: (0211)5296-400

Toshiba Electronics Asia, Ltd.

Hong Kong Head Office
Tel: 2375-6111 Fax: 2375-0969

France Branch
Tel: (1)47282181

Beijing Office
Tel: (010)6590-8796 Fax: (010)6590-8791

Buffalo Grove (Chicago)

Tel: (847)484-2400 Fax: (847)541-7287

Italy Branch
Tel: (039)68701 Fax: (039)6870205

Chengdu Office
Tel: (028)8675-1773 Fax: (028)8675-1065

Duluth/Atlanta
Tel: (770)931-3363 Fax: (770)931-7602

Spain Branch
Tel: (91)660-6798 Fax: (91)660-6799

Qingdao Office
Tel: (532)8579-3328 Fax: (532)8579-3329

El Paso
Tel: (915)771-8156

U.K. Branch
Tel: (0870)060-2370 Fax: (01252)53-0250

Toshiba Electronics (Shenzhen) Co.,Ltd

Tel: (0755)2399-6897 Fax: (0755)2399-5573

Marlborough
Tel: (508)481-0034 Fax: (508)481-8828

Sweden Branch
Tel: (08)704-0900 Fax: (08)80-8459

Toshiba Electronics (Shanghai) Co., Ltd.

Shanghai PUXI Branch
Tel: (021)6139-3888 Fax: (021)6190-8288

Parsippany
Tel: (973)541-4715 Fax: (973)541-4716

Toshiba Electronics Asia (Singapore) Pte. Ltd.

Tel: (6278)5252 Fax: (6271)5155

San Jose
Tel: (408)526-2400 Fax: (408)526-2410

Hangzhou Office
Tel: (0571)8717-5004 Fax: (0571)8717-5013

Toshiba Electronics Service (Thailand) Co., Ltd.

Tel: (02)501-1635 Fax: (02)501-1638

Wixom (Detroit)
Tel: (248)347-2607 Fax: (248)347-2602

Nanjing Office
Tel: (025)8689-0070 Fax: (025)8689-0070

Toshiba Electronics Trading (Malaysia) Sdn. Bhd.

Kuala Lumpur Head Office
Tel: (03)5631-6311 Fax: (03)5631-6307

Bloomington
Tel: (952)842-2400 Fax: (952)893-8031

Toshiba Electronics (Dalian) Co., Ltd.

Tel: (0411)8368-6882 Fax: (0411)8369-0822

San Diego
Tel: (858)385-5900 Fax: (858)674-7606

Penang Office
Tel: (04)226-8523 Fax: (04)226-8515

Tsurong Xiamen Xiangyu Trading Co., Ltd.

Tel: (0592)226-1398 Fax: (0592)226-1399

Toshiba Electronics do Brasil Ltda.

Tel: (011)2539-6681 Fax: (011)2539-6675

Toshiba India Private Ltd.

Tel: (0124)499-6600 Fax: (0124)499-6611

Toshiba Electronics Korea Corporation

Seoul Head Office
Tel: (02)3484-4334 Fax: (02)3484-4302

Daegu Office
Tel: (053)428-7610 Fax: (053)428-7617

Discrete IGBTs

Toshiba Electronics Taiwan Corporation

Taipei Head Office
Tel: (02)2508-9988 Fax: (02)2508-9999

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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (Unintended Use). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Product may include products subject to foreign exchange and foreign trade control laws. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

2011
Previous edition: BCE0010G 2011-3(1.5k)SO-DQ

Semiconductor Company
Website: http://www.semicon.toshiba.co.jp/eng